A short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure

Semiconductor optical amplifiers (SOAs) with n-type modulation-doped multiple quantum well structure have been investigated. The shortened carrier lifetime is derived from the PL spectrum and electrical modulation frequency response measurement. The carrier lifetime in semiconductor optical amplifiers with any n-type-2-modulated doping multiple quantum well structure is less than 60% of that in the undoped partner. The shortest measured carrier lifetime of 236 ps in the MD-MQW SOA with sheet carrier density of 3 x 10(12) cm(-2) was only 38% of that in the undoped MQW SOA, which can increase the wavelength conversion efficiency via four wave mixing by a factor of about 7 and switching speed via XGM and XPM applications by a factor of 2.63.

Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness

We report on the photoluminescence (PL) properties of InAs/InAlAs/InP quantum wires (QWRs) with various InAs deposited thickness. The PL linewidth of the QWRs decreases with increasing InAs deposited thickness due to the different thicknesses of the QWRs and defects in the samples. The defects and lateral composition modulation of the InAlAs layers play an important role in the temperature-dependent PL properties of the samples. (c) 2005 Elsevier B.V. All rights reserved.

Effects of the sulfur pressure on pyrite FeS2 films prepared by sulfurizing thermally iron films

The effect of sulfur vapor pressure in preparing the FeS2 films has been discussed and some incongruous views about sulfur pressure have been clarified in this paper based on experimental results and theoretical analysis. It is shown that lower sulfur pressures than the saturation value only result in poorer crystallization and worse performances, and in other words the FeS2 films could be optimized through improving the sulfur pressure till the saturation point. However for a certain temperature the sulfur pressure is limited by its saturated vapor pressure, and further increase of the sulfur quantity reacted with Fe films has little influence on the structure and properties of the pyrite films. (C) 2003 Elsevier B.V. All rights reserved.

Structural characterization of stable amorphous silicon films

A kind of hydrogenated diphasic, silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic and microstructural properties of the films have been investigated by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). Our experimental results and corresponding analyses showed that the diphasic films, incorporated with a subtle boron compensation, could gain both the fine photosensitivity and high stability, provided the crystalline fraction (f) was controlled in the range of 0 < f < 0.3. When compared with the conventional hydrogenated amorphous silicon (a-Si:H), the diphasic films are more ordered and robust in the microstructure, and have a less clustered phase in the Si-H bond configurations. (C) 2002 Elsevier Science Ltd. All rights reserved.

Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces

Two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(311)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows deferring from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-xAs solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [01 (1) over bar] and [(2) over bar 33], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between neighbouring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. Photoluminescence (PL) result demonstrates that QDs grown on (311)B have the narrowest linewidth and the strongest integrated intensity, compared to those grown on (100) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

集热栅对太阳能烟囱发电系统效率的影响

采用计算流体动力学（CFD）方法对太阳能烟囱发电装置进行数值模拟，得到装置内部的温度场、速度场、压力场等分布情况。对集热棚的各种几何和物理参数进行研究和分析。结果表明，集热棚直径、太阳辐照强度、覆盖材料的透明度等诸多参数对系统效率有直接而重要的影响。

草地植被恢复对次降雨土壤水分动态的影响分析

通过对宁南典型草原植被恢复过程次降雨土壤水分动态的研究,阐明植被恢复对次降雨后土壤水分的影响及机理。结果表明,次降雨提高了土壤含水率和贮水量,均表现出1 d>3 d>7 d。草地封育能够提高次降雨资源化效率,随封育时间延长,次降雨后0-60 cm土壤含水率和0-100 cm土壤贮水量不断提高。降雨对封育草地土壤水分的影响范围在100 cm土层内,100 cm以下不能得到降雨的补充。封育时间延长土壤水分活跃层加深,坡耕地仅为40 cm,封育17 a后达到60 cm。土壤持水能力越强,表层土壤饱和导水率越大,雨后1 d在0-100 cm土壤贮水量越大。地上生物量愈大,雨后1~7 d在0-200 cm土壤耗水量越大。

夏玉米低定额畦灌田间试验研究

为了合理利用水资源,探索实现低定额均匀灌溉的适宜方法和技术路线,设计作物高效用水的有限灌溉制度,在陕西省杨凌区中壤土玉米地开展了不同畦田规格和灌水定额对土壤水分及玉米产量影响的田间试验。结果表明:对于田面坡度一定的试验田块,入畦单宽流量在3～6lm/s范围内,畦田宽度在4m以内时,各处理小区的土壤平均含水量无显著性差异,但畦田内土壤水分分布却有不同差异,当畦宽2～3m,畦长50m时可达到较高灌水效率(Ea>80%)和灌水均匀度(DU>80%);玉米拔节-抽雄期的灌水定额处理对玉米的生长存在明显影响;不同灌水定额对作物产量、水分利用效率影响显著。

子午岭地区植被演替过程中土壤养分及酶活性特征研究

选择植被自然恢复不同年限的阳坡梁坡地作为研究对象,采用时空互代法研究子午岭地区植被恢复过程中土壤养分和酶活性的变化。结果表明,植被恢复140 a内,不同土层土壤有机质含量、全氮含量、蔗糖酶活性、脲酶活性、碱性磷酸酶活性和过氧化氢酶活性增加,且表土层(0~20 cm)土壤养分含量和酶活性高于下层土壤(20~40 cm)。以裸露地为对照,土壤0~20 cm土层,有机质含量、全氮含量、蔗糖酶活性、脲酶活性、碱性磷酸酶活性和过氧化氢酶活性分别增加了23.8%~534.9%、9.3%~300.0%、213.6%~521.5%、40.4%~286.5%、22.7%~232.2%和3.2%~22.4%,土壤速效磷含量呈现波动变化,过氧化氢酶活性变化幅度比其他三种酶低。土壤有机质含量与全氮、速效磷含量密切相关;土壤蔗糖酶与土壤有机质、全氮均为极显著的相关关系(0.930/0.918);土壤脲酶活性与全氮含量相关系数最高(0.804);土壤碱性磷酸酶活性与有机质、全氮含量都呈极显著相关(0.977/0.984);土壤过氧化氢酶活性与全氮含量极显著相关,相关系数达0.996。

铜的多元复合物组成、结构和电学性质的研究

本论文包括三个部分的内容，第一部分研究了Y-Ba-Cu-O材料中，钙、钾、氟离子的掺入对材料结构和电、磁学性质的影响。1、在Y_(1-x)Ca_xBa_2Cu_3O_(7-y)系列中，当x ≤ 0.15时，钙离子进入了YBa_2Cu_3O_(7-y)晶格中钇离子的位置，使晶胞参数略为增大，但没有引起正交 → 四方相变。钙离子渗入导致123相中Cu~(3+)含量上升，同时材料的监界超导转变温度下降。因此，Cu~(3+)含旱管高可能是对超导电性不利的。由于钇离子位置紧邻着Cu(2)-O平面而与Cu(1)-O链相隔较远。因此，钇离子被钙离子替代时主要影响了Cu(2)-O平面的性质。少量钙离子的渗入即明显影响材料的超导电性，这说明Cu(2)-O平面的性质与超导电性密切相关，并可能起着关键的作用。2、在Y(Ba_(1-x)Ca_x)_2Cu_3O_y系的研究中，当x = 1，YCa_2Cu_3O_y是一个单一的化合物，文献未见报道，本文研究了它的结构，电学性质与热学性质，确定它的结构属正交晶系，a = 5.286 A、b = 7.636 A、c = 9.286 A。热分析表明YCa_2Cu_3O_y在1080 ℃分解，分解前于380 ℃ 和608 ℃出殃失氧现象。这个化合物是黑色n型半导体。室温电阻率1.2 * 10~5Ω·cm。与热分析中的失氧温度相对应，lnρ-1/T曲线上在370 ℃、620 ℃ 出现两个转折点。3、在Y-Ba-Cu-O材料中渗入钾离子能细化材料晶粒，降低超导转变宽度，提高零电阻温度，但由于KOH、K_2CO_3等强吸湿性杂质的存在也降低了材料的稳定性。4、在Y-Ba-Cu-O材料中间时掺入钾和氟离子时，材料的超导电性的变化与仅掺钾时相似。这种变化可能主要是钾离子的影响造成的。第二部分中，我们研究了Ca-Sr-Ca-O系的相图和新化合物Sr_3Cu_5O_(8+x)、CaSrCu_3O_(5+x)的结构和电学性质。在第三部分中，广泛研究了组成为Bi_tSr_vCa_wCu_zO_y超导材料的制备，结构和超导电性。铋系超导材料的形成貌与YBa_2Cu_3O_y材料有较大差异，前者是片状层叠的晶粒堆积而成，后者是球状小颗粒堆积而成的。我们合成的材料最高起始转变温度124K，最高零电阻温度112K，与国际上已达到的最高Tc值一致。Jc值达到131A/cm~2。

分子束外延生长的n型Al掺杂ZnS_(1-x)Te_x深中心研究

应用电容-电压、光致荧光和深能级瞬态谱技术研究了分子束外延生长的n型Al掺杂ZnS_(1-x)Te_x外延层深中心。Al掺杂ZnS_(0.977)Te_(0.023)的光致荧光强度明显低于不掺杂的ZnS_(0.977)Te_(0.023),这表明一部分Al原子形成非辐射深中心。Al掺杂ZnS_(1-x)Te_x(x=0,0.017,0.04和0.046)的深能级瞬态傅里叶谱表明，Al引进导带下的0.21和0.39eV电子陷阱，Te除了作为材料合金的成分和等电子中心外，还涉及到一个电子陷阱的形成，其相对导带的能级位置随Te组分增加而减小。实验结果还表明仅有少量掺杂的Al原子形成非辐射中心，这说明Al对于Te组分范围内(x≤0.046)的ZnS_(1-x)Te_x外延层的确是一种非常好的施主杂质。