Discussion on the basic mathematical models of neurons - Double synaptic weight neuron in general-purpose neurocomputer, theory and application

Based on the introduction of the traditional mathematical models of neurons in general-purpose neurocomputer, a novel all-purpose mathematical model-Double synaptic weight neuron (DSWN) is presented, which can simulate all kinds of neuron architectures, including Radial-Basis-Function (RBF) and Back-propagation (BP) models, etc. At the same time, this new model is realized using hardware and implemented in the new CASSANN-II neurocomputer that can be used to form various types of neural networks with multiple mathematical models of neurons. In this paper, the flexibility of the new model has also been described in constructing neural networks and based on the theory of Biomimetic pattern recognition (BPR) and high-dimensional space covering, a recognition system of omni directionally oriented rigid objects on the horizontal surface and a face recognition system had been implemented on CASSANN-H neurocomputer. The result showed DSWN neural network has great potential in pattern recognition.

Accurate mode analysis of ultraviolet-written channel waveguides

The transfer matrix method combined with the effective index method is adopted to model the silica-based channel waveguide patterned by UV writing. The effective indexes of the graded index channel waveguides with different dimension are calculated. The maximal error of the effective index is less than 3 x 10(-5). By this method, the number of the guided mode and the dimension range to guide certain modes can be obtained easily. Finally, the dimension range to guide a single mode is presented. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Metal-semiconductor-metal ultraviolet photodetector based on GaN

A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with lambda = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and is 15.3 nA under 10 V bias. A maximum responsivity of 0.166 A/W has been achieved under the illumination with lambda = 366 nm light and 15 V bias. It exhibits a typical sharp band-edge cutoff at the wavelength of 366 nm, and a high responsivity at the wavelength from 320 nm to 366 nm. Its responsivity under the illumination with lambda = 360 nm light increases when the bias voltage increases.

Signal bandwidth of general N x N multimode interference couplers

Analytical expression of signal bandwidth of general straight and tapered N x N multimode interference (MMI) couplers is presented. The signal bandwidth is characterized as a function of mode relative energy, mode propagation delay time, and mode pulse broadening in the multimode section of MMI coupler. The model is used to evaluate the signal bandwidth of specific couplers. Results indicate that the signal bandwidth decreases seriously with the increase of channel number and channel guide space. Compared with the straight MMI coupler, the tapered MMI coupler has an improved signal bandwidth.

Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE

Interdigital metal-semiconductor-metal (MSM) ultraviolet photoconductive detectors have been fabricated on undoped GaN films grown by molecular beam epitaxy (MBE), Response dependence on wavelength, applied current, excitation powers and chopper frequency has been extensively investigated. It is shown that the photodetector's spectral response remained nearly constant for wavelengths above the band gap and dropped sharply by almost three orders of magnitude for wavelengths longer than the band gap. It increases linearly with the applied constant current, but very nonlinearly with illuminating power. The photodetectors showed high photoconductor gains resulting from trapping of minority carriers (holes) at acceptor impurities or defects. The results demonstrated the high quality of the GaN crystal used to fabricate these devices. (C) 2000 Elsevier Science B.V. All rights reserved.

Ultraviolet-blue electroluminescence from Gd3Ga5O12 : Ag

UV-blue light was obtained from a thin-film electroluminescence device using Gd3Ga5O12:Ag as a light-emitting layer, which was deposited by using electron-beam evaporation. The crystal composition and structure of Gd3Ga5O12:Ag were studied by x-ray powder diffraction, The Gd3Ga5O12:Ag has a photoluminescence emission which peaked at around 397 and 467 nm, which were attributed to the oxide vacancies and Ag+, respectively. The brightness of 32 cd/m(2) was obtained when an alternating voltage of 130 V at 1 kHz was applied. (C) 2000 American Institute of Physics. [S0003-6951(00)05031-2].

High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)

A Schottky-based metal-semiconductor-metal photodetector is fabricated on 1 mu m-thick, crack-free GaN on Si (I 11) substrate using an optimized AlxGal-xN/AlN complex buffer layer. It exhibits a high responsivity of 4600A/W at 366nm which may be due to both a crack-free sample and high internal gain. The relationship between responsivity and bias voltage is also investigated. The experiment results indicate that the responsivity increases with the bias voltage and shows a tendency to saturate. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim.

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers are presented. The growth of the 4H-SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetector was 300 x 300 mu m(2). The dark and illuminated I-V characteristics were measured at reverse biases from 0 V to 30 V at room temperature. The illuminated current was at least two orders of magnitude higher than the dark current at a bias of below 12 V. The photoresponse was measured from 200 nm to 400 nm at different reverse biases and the peak values of the photo response were located at 3 10 nm. The calculated spectral detectivity D* was shown to be higher than 10(13) cmHz(1/2)/W from 260 to 360 nm with a peak value of 5.9 x 10(13) cmHz(1/2) /W at 310 nm. The peak value of the photoresponse was hundreds of times higher than the response at 400 nm, which showed the device had good visible blind performance. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

ZnO thin film photoconductive ultraviolet detector with fast photoresponse

C-axis preferred oriented ZnO thin films were prepared on quartz substrates by RF sputtering. Photoconductive ultraviolet detector with planar interdigital electrodes was fabricated on ZnO thin film by the lift off technique. Linear I-V characteristic was observed under dark or 365 nm UV light illumination and has obvious difference. The photoresponsivity of 365 nm at 5 V bias is 18 A/W. The response time measure set mainly contains KrF excimer laser with the pulse width of 30 ns and the oscillograph with the bandwidth of 200 MHz. The result shows fast photoresponse with a rise time of 100 ns and fall time of 1.5 mu s. (c) 2005 Elsevier B.V. All rights reserved.