The origin of the transverse relaxation time in optically excited semiconductor quantum wells

The origin of the transverse relaxation time in optically excited semiconductor quantum wells is investigated based on the vector property of the interband transition matrix elements. The dephasing rate due to carrier-carrier (CC) scattering is found to be equal to half of the common momentum relaxation rate. The analytical expression of the polarization dephasing due to CC scattering in two-dimension is established and the dependence of the dephasing rate Gamma(cc) on the carrier density N is determined to be Gamma(cc) = constant (.) N-1/2, which is used to explain the experimental results and provides a promising physical picture. (C) 2004 Elsevier B.V. All rights reserved.

飞秒脉冲时空变换整形技术

飞秒激光脉冲通过时空变换技术将时域信息变换到空域，通过空域的处理再返回到时域，是实现飞秒激光脉冲整形、测量和控制的一项重要技术。在应用方面，可产生各种所需要的波形．已广泛应用在飞秒化学、信号处理、安全通信、生物学和医学成像等方面。介绍了飞秒时空变换脉冲整形的几种方法。

Measuring ultrashort optical pulses using multi-shot second harmonic generation frequency resolved optical gating

Frequency resolved optical gating (FROG), is an effective technique for characterizing the ultrafast laser pulses. The multi-shot second harmonic generation (SHG) FROG is the most sensitive one in different FROGs. In this paper we use this technique to measure the femtosecond optical pulses generated by a conventional Ti:sapphire oscillator.

飞秒激光诱导波纹状微突起结构

利用飞秒激光振荡器产生的脉冲对镀有铬层的玻璃和石英基片进行微加工,发现两种样品表面均有波纹状的微突起结构产生。这些微突起结构离开样品表面的高度为10～300 nm不等,并且随着激光功率的增大而增加,在一定功率下达到饱和状态。它们的形貌、尺寸和高度取决于入射飞秒激光的能流以及飞秒脉冲的参数。通过化学方法证明了这些微突起结构是由玻璃和石英的主要成分SiO2组成的,并非样品表面的铬元素。此外,通过选取适当的飞秒激光功率和样品加工速度,制作了两种不同周期和线宽的光栅结构,显示出飞秒激光振荡器良好的加工性能。

飞秒激光辐射下微突起结构形成的超快热弹性模拟

本文结合有限元方法和超快热弹性模型对飞秒激光辐射下形成的微突起结构进行了数值模拟研究。模拟结果表明微突起结构的形成与入射飞秒激光的参数以及材料的热弹性质有关。在圆锥状微突起结构的形状和高度方面，实验结果与模拟结果呈现良好的一致性，这也从实验上表明了超快热弹性模型的有效性。本文的研究将有助于利用超快激光对薄膜材料进行纳米构造。

飞秒激光诱导铬膜产生周期性微结构

通过纳焦量级的飞秒激光在铬膜表面诱导出了周期性微结构,并使用入射飞秒激光和激发的表面等离子体波之间的干涉理论模拟分析了飞秒激光作用下铬膜表面的温度场分布情况,定性地解释了铬膜表面周期性微结构产生的机理。实验和理论结果有助于对飞秒激光和铬膜相互作用机制的理解。

展宽器中非对称光谱剪切对输出脉冲对比度的影响

在展宽器中,光谱的剪切情况非常重要,它直接影响输出脉冲的质量。以ffner展宽器为例,参照以往建立的光线追迹模型,建立了分析展宽器中光谱剪切的模型。发现当展宽器的参数确定好后,光栅放置的位置对激光脉冲光谱剪切有非常重要的影响。当光栅相对于光轴中心对称放置时,展宽器容许通过的光谱相对于激光中心波长将是非对称分布的,即此时在展宽器中发生的光谱剪切为非对称光谱剪切,在神光II第9路拍瓦激光装置中,这种非对称光谱剪切将使输出脉冲对比度下降一个数量级。为了使展宽器中通过的光谱相对于激光中心波长对称分布,需要将光栅相对于光轴非中心对称放置。

光谱相位相干技术测量飞秒脉冲的倍频误差

从理论上推导了第Ⅱ类相位匹配下宽带飞秒脉冲的二次谐波光场,分析输入飞秒脉冲的非共线相位匹配方式、脉冲带宽引起相位失配与群速失配对测量的影响。结果表明,为了消除飞秒脉冲的带宽影响,需要对测量记录的光强乘以一个调制因子;测量相位误差与非共线相位匹配的夹角和晶体长度成正比;相位失配与群速失配产生相位测量误差,且第Ⅱ类相位匹配方式下脉冲附加相位值较大;强度和相位误差需要在脉冲重建结果中补偿。

Femtosecond optical Kerr effect study of Ge(10)AS(40)S(30)Se(20) film

The results of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultrafast pulses in amorphous Ge10As40S30Se20 film is reported in this paper. The film shows an optical non-linear response of: 200 fs under ultrafast 80 fs-pulse excitation and the values of real and imaginary parts of non-linear susceptibility chi((3)) were 9.0 X 10(-12) and -4.0 X 10(-12) esu, respectively. The large third-order non-linearity and ultrafast response are attributed to the ultrafast distortion of the electron orbits surrounding the average positions of the nucleus of Ge, As, S and Se atoms. This Ge10As40S30Se20 chalcogenide glass would be expected as a promising material for optical switching technique. (c) 2005 Elsevier Ltd. All rights reserved.

n-type Ge-SiGe quantum cascade structure utilizing quantum wells for electrons in the L and Gamma valleys

In this letter, we propose an n-type vertical transition bound-to-continuum Ge-SiGe quantum cascade structure utilizing electronic quantum wells in the L and F valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. Under a bias of 80 kV/cm, the carriers in the lower level are extracted by miniband transport and L - Gamma tunneling into the subband in the Gamma well of the next period. And then the electrons are injected into the upper level by ultrafast intervalley scattering, which not only effectively increases the tunneling rate and suppresses the thermal backfilling of electrons, but also enhances the injection efficiency of the upper level. The performance of the laser is discussed.

Carrier spin relaxation in (Ga, Mn) As at room temperature

In this paper, the excitation energy density dependence of carrier spin relaxation is studied at room temperature for the as-grown and annealed (Ga, Mn) As samples using femtosecond time-resolved pump-probe Kerr spectroscopy. It is found that spin relaxation lifetime of electrons lengthens with increasing excitation energy density for both samples, and the annealed ( Ga, Mn) As has shorter carrier recombination and electron spin relaxation lifetimes as well as larger Kerr rotation angle than the as-grown ( Ga. Mn) As under the same excitation condition. which shows that DP mechanism is dominant in the spin relaxation process for ( Ga, Mn)As at room temperature. The enhanced ultrafast Kerr effect in the annealed (Ga,Mn)As shows the potential application of the annealed ( Ga, Mn) As in ultrafast all-optical spin switches, and also provides a further evidence for the p-d exchange mechanism of the ferromagnetic origin of (Ga, Mn) As.

Reduced dynamics with renormalization in solid-state charge qubit measurement

Quantum measurement will inevitably cause backaction on the measured system, resulting in the well-known dephasing and relaxation. In this paper, in the context of solid-state qubit measurement by a mesoscopic detector, we show that an alternative backaction known as renormalization is important under some circumstances. This effect is largely overlooked in the theory of quantum measurement.

Quantum measurement of a solid-state qubit: A unified quantum master equation approach

Quantum measurement of a solid-state qubit by a mesoscopic detector is of fundamental interest in quantum physics and an essential issue in quantum computing. In this work, by employing a unified quantum master equation approach constructed in our recent publications, we study the measurement-induced relaxation and dephasing of the coupled-quantum-dot states measured by a quantum-point contact. Our treatment pays particular attention on the detailed-balance relation, which is a consequence of properly accounting for the energy exchange between the qubit and detector during the measurement process. As a result, our theory is applicable to measurement at arbitrary voltage and temperature. Both numerical and analytical results for the qubit relaxation and dephasing are carried out, and important features are highlighted in concern with their possible relevance to future experiments.

Nanocavity shrinkage and preferential amorphization during irradiation in silicon

We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation. The results reveal novel thermodynamic nonequilibrium properties of such an open-volume nanostructure in condensed matter and also of covalently bound amorphous materials both at nanosize scale and during ultrafast interaction with energetic beam.

Full counting statistics of transport through two-channel Coulomb blockade systems

A mesoscopic Coulomb blockade system with two transport channels is studied in terms of full counting statistics. It is found that the shot noise and skewness are crucially affected by the quantum mechanical interference. In particular, the super-Poisson behavior can be induced as a consequence of constructive interference, and can be understood by the formation of effective fast-and-slow transport channels. Dephasing and finite temperature effects are carried out together with physical interpretations.