Water solubility enhancement of phthalates by cetyltrimethylammonium bromide and beta-cyclodextrin

Water solubility enhancements of six phthalates (five aliphatic phthalates and one phenyl phthalate) by cetyltrimethylammonium bromide (CTAB) and beta-cyclodextrin (beta-CD) were studied at 25 degreesC. The solubilities of these plithalates are remarkably enhanced by CTAB solutions above the critical micelle concentration (cmc). Only marginal enhancement of phthalate solubility was observed in solutions containing CTAB below its cmc and beta-CD at low concentrations (less than 5 mM). The solubility enhancements of the plithalates are proportional to the added amount of CTAB and beta-CD. Partition coefficients of the plithalates between monomeric CTAB surfactant and water (K-MN) and between CTAB micelle and water K-MC) were estimated from the experimental data. The mechanisms of solubility enhancements by CTAB and beta-CD were discussed. A log-linear equation was proposed and evaluated for the solubilization by CTAB below cmc, while the previously proposed linear partitioning model was questioned. The structures of the complexes formed between plithalates and beta-CD were proposed, and the formation constants were estimated. The values of log K-MC, log K-MN, and log Kbeta-CD of the plithalates were found to correlate linearly with the log K-OW of plithalates, with the exception of the solid phenyl phthalate.

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGa(1-x)As materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content (55%) InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.

Enhanced Proton Conduction in Polymer Electrolyte Membranes as Synthesized by Polymerization of Protic Ionic Liquid-Based Microemulsions

Proton-conducting membranes were prepared by polymerization of microemulsions consisting of surfactant-stabilized protic ionic liquid (PIL) nanodomains dispersed in a polymerizable oil, a mixture of styrene and acrylonitrile. The obtained PIL-based polymer composite membranes are transparent and flexible even though the resulting vinyl polymers are immiscible with PIL cores. This type of composite membranes have quite a good thermal stability, chemical stability, tunability, and good mechanical properties. Under nonhumidifying conditions, PIL-based membranes show a conductivity up to the order of 1 x 10(-1) S/cm at 160 degrees C, due to the well-connected PIL nanochannels preserved in the membrane. This type of polymer conducting membranes have potential application in high-temperature polymer electrolyte membrane fuel cells.

Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells

We investigate the temperature dependence of photoluminescence (PL) and time-resolved PL on the metamorphic InGaAs quantum wells (QWs) with an emission wavelength of 1.55 mu m at room temperature. Time-resolved PL measurements reveal that the optical properties can be partly improved by introducing antimony (Sb) as a surfactant during the sample growth. The temperature dependence of the radiative lifetime is measured, showing that for QWs grown with Sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60 K, while the nonradiative process becomes activated with further increases in temperature. However, without Sb assistance, the nonradiative centers are activated when the temperature is higher than 20 K.

Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an in-doping technique

A two-hot-boat chemical vapor deposition system was modified from a thermal evaporation equipment. This system has the advantage of high vacuum, rapid heating rate and temperature separately controlled boats for the source and samples. These are in favor of synthesizing compound semiconducting nano-materials. By the system, we have synthesized high-quality wurtzite single crystal GaN nanowires and nanotip triangle pyramids via an in-situ doping indium surfactant technique on Si and 3C-SiC epilayer/Si substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, highresolution transmission electron microscopy, energy- dispersive x-ray spectroscopy, and photoluminescence measurements. The GaN nanotip triangle pyramids, synthesized with this novel method, have potential application in electronic/ photonic devices for field-emission and laser.

Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance

Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S-shaped temperature dependence of the PL peak position is found in the In0.42Ga0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.

Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots

InGaN/GaN quantum dots were grown on the sapphire (0 0 0 1) substrate in a metalorganic chemical vapor deposition system. The morphologies of QDs deposited on different modified underlayer (GaN) surfaces, including naturally as grown, Ga-mediated, In-mediated, and air-passivated ones, were investigated by atomic force microscopy (AFM). Photo luminescence (PL) method is used to evaluate optical properties. It is shown that InGaN QDs can form directly on the natural GaN layer. However, both the size and distribution show obvious inhomogeneities. Such a heavy fluctuation in size leads to double peaks for QDs with short growth time, and broad peaks for QDs with long growth time in their low-temperature PL spectra. QDs grown on the Ga-mediated GaN underlayer tends to coalesce. Distinct transform takes place from 3D to 2D growth on the In-mediated ones, and thus the formation of QDs is prohibited. Those results clarify Ga and In's surfactant behavior. When the GaN underlayer is passivated in the air, and together with an additional low-temperature-grown seeding layer, however, the island growth mode is enhanced. Subsequently, grown InGaN QDs are characterized by a relatively high density and an improved Gaussian-like distribution in size. Short surface diffusion length at low growth temperature accounts for that result. It is concluded that reduced temperature favors QD's 3D growth and surface passivation can provide another promising way to obtain high-density QDs that especially suits MOCVD system. (c) 2004 Elsevier Ltd. All rights reserved.

Al2O3 : Cr3+ nanotubes synthesized via homogenization precipitation followed by heat treatment

Cr3+-doped NH4Al(OH)(2)CO3 nanotubes, templated by surfactant assemblies, were successfully synthesized via the homogenization precipitation method, and various crystallographic phase Al2O3:Cr3+ nanotubes were also obtained by postannealing at different temperatures. The characteristic R-1, R-2 doublet line transitions of ruby can be observed in the high crystalline alpha-Al2O3 nanotubes calcined at temperatures higher than 1200 degrees C. The results also indicate that the formation mechanism of the tubular nanostructures should result from the self-rolling action of layered compound NH4Al(OH)(2)CO3 under the assistance of the surfactant soft-template. The convenient synthetic procedure, excellent reproducibility, clean reactions, high yield, and fine quality of products in this work make the present route attractive and significant. Aluminum oxide nanotubes with high specific surface area could be used as fabricating nanosized optical devices doped with different elements and stable catalyst supports of metal clusters.

Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

The effects of In doped low-temperature (LT) AlGaN interlayer on the properties of GaN/Si(111) by MOCVD have been investigated. Using In doping LT-interlayer can decrease the stress sufficiently for avoiding crack formation in a thick (2.0 mu m) GaN layer. Significant improvement in the crystal and optical properties of GaN layer is also achieved. In doping is observed to reduce the stress in AlGaN interlayer measured by high-resolution X-ray diffraction (HRXRD). It can provide more compressive stress to counteract tensile stress and reduce crack density in subsequent GaN layer. Moreover, as a surfactant, indium is observed to cause an enhanced PL intensity and the narrowed linewidths of PL and XRD spectra for the LT-interlayer. Additionally, the crystal quality of GaN layer is found to be dependent on the growth parameters of underneath In-doped LT-AlGaN interlayer. The optimal parameters, such as TMIn flow rate, TMAl flow rates and thickness, are achieved to obtain nearly 2.0 mu m thick crack free GaN film with advanced optical and crystal properties. (c) 2005 Elsevier B.V. All rights reserved.

Porous ZnAl2O4 spinel nanorods doped with Eu3+: synthesis and photoluminescence

Eu3+-doped zinc aluminate (ZnAl2O4) nanorods with a spinel structure were successfully synthesized via an annealing transformation of layered precursors obtained by a homogeneous coprecipitation method combined with surfactant assembly. These spinel nanorods, which consist of much finer nanofibres together with large quantities of irregular mesopores and which possess a large surface area of 93.2 m(2) g(-1) and a relatively narrow pore size distribution in the range of 6 - 20 nm, are an ideal optical host for Eu3+ luminescent centres. In this nanostructure, rather disordered surroundings induce the typical electric-dipole emission (D-5(0) --> F-7(2)) of Eu3+ to predominate and broaden.

The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content

Sb-assisted GaInNAs/GaAs quantum wells (QWs) with high (42.5%) indium content were investigated systematically. Transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (PL) measurements reveal that Sb acts as a surfactant to suppress three-dimensional growth. The improvement in the 1.55 mu m range is much more apparent than that in the 1.3 mu m range.. which can be attributed to the difference in N composition. The PL intensity and the full-width at half maximum of the 1.55 mu m single-QW were comparable with that of the 1.3 Am QWs. (c) 2006 Elsevier B.V. All rights reserved.

Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy

It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 mu m with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 degrees C with a short duration of 10 s is suggested for optimizing the annealing effect. (c) 2005 Elsevier B.V. All rights reserved.

The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method

Multi-sheet InGaN/GaN quantum dots (QDs) were grown successfully by surface passivation processing and low-temperature growth in metalorganic chemical vapor deposition. This method based on the principle of increasing the energy barrier of adatom hopping by surface passivation and low-temperature growth, is quite different from present methods. The InGaN quantum dots in the first layer of about 40-nm-wide and 15-nm-high grown by this method were revealed by atomic force microscopy. The InGaN QDs in upper layer grew bigger. To our knowledge, the current-voltage characteristics of multi-sheet InGaN/GaN QDs were measured for the fist time. Two kinds of resonance-tunneling-current features were observed which were attributed to the low-dimensional localization effect. Some current peaks only appeared in positive voltage for sample due to the non-uniformity of the QDs in the structure. (C) 2002 Elsevier Science B.V. All rights reserved.

A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition

A new method to form nanoscale InGaN quantum dots using MOCVD is reported, This method is much different from a method. which uses surfactant or the Stranski-Krastannow growth mode. The dots were formed by increasing the energy barrier for adatoms, which are hopping by surface passivation, and by decreasing the growth temperature. Thus, the new method can be called as a passivation-low-temperature method. Regular high-temperature GaN films were grown first and were passivated. A low-temperature thin layer of GaN dot was then deposited on the surface that acted as the adjusting layer. At last the high-density InGaN dots could be fabricated on the adjusting layer. Atomic force microscopy measurement revealed that InGaN dots were small enough to expect zero-dimensional quantum effects: The islands were typically 80 nm wide and 5 nm high. Their density was about 6 x 10(10) cm(-2). Strong photoluminescence emission from the dots is observed at room temperature, which is much stronger than that of the homogeneous InGaN film with the same growth time. Furthermore, the PL emission of the GaN adjusting layer shows 21 meV blueshift compared with the band edge emission of the GaN due to quantum confine effect. (C) 2002 Elsevier Science B.V. All rights reserved.