Prefrontal white matter abnormalities in young adult with major depressive disorder: A diffusion tensor imaging study

Prefrontal impairments have been hypothesized to be most strongly associated with the cognitive and emotional dysfunction in depression. Recently, white matter microstructural abnormalities in prefrontal lobe have been reported in elderly patients with ma

Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field

A systematic investigation is made on the influence of the longitudinal and transverse period distributions of quantum dots on the elastic strain field. The results showed that the effects of the longitudinal period and transverse period on the strain field are just opposite along the direction of center-axis of the quantum dots, and under proper conditions, both effects can be eliminated. The results demonstrate that in calculating the effect of the strain field on the electronic structure, one must take into account the quantum dots period distribution, and it is inadequate to use the isolated quantum dot model in simulating the strain field.

Influence of longitudinal electric field on the hot-phonon effect in quantum wells

Using the Huang-Zhu model [K. Huang and B.-F. Zhu, Phys. Rev. B 38, 13377 (1988)] for the optical phonons and associated carrier-phonon interactions in semiconductor superlattices, the effects of longitudinal electric field on the energy-loss rates (ELRs) of hot carriers as well as on the hot-phonon effect (HPE) in GaAs/AlAs quantum wells (QWs) are studied systematically. Contributions of various bulklike and interface phonons to the hot-carrier relaxation are compared in detail, and comprehensively analyzed in relation to the intrasubband and intersubband scatterings for quantum cascade lasers. Due to the broken parity of the electron (hole) states in the electric field, the bulklike modes with antisymmetric potentials are allowed in the intrasubband relaxation processes, as well as the modes with symmetric potentials. As the interface phonon scattering is strong only in narrow wells, in which the electric field affects the electron (hole) states little, the ELRs of hot carriers through the interface phonon scattering are not sensitive to the electric field. The HPE on the hot-carrier relaxation process in the medium and wide wells is reduced by the electric field. The influence of the electric field on the hot-phonon effect in quantum cascade lasers is negligible. When the HPE is ignored, the ELRs of hot electrons in wide QWs are decreased noticeably by the electric field, but slightly increased by the field when considering the HPE. In contrast with the electrons, the ELRs of hot holes in wide wells are increased by the field, irrespective of the HPE. (c) 2006 American Institute of Physics.

Longitudinal spin transport in diluted magnetic semiconductor superlattices: The effect of the giant Zeeman splitting

Longitudinal spin transport in diluted magnetic semiconductor superlattices is investigated theoretically. The longitudinal magnetoconductivity (MC) in such systems exhibits an oscillating behavior as function of an external magnetic field. In the weak magnetic-field region the giant Zeeman splitting plays a dominant role that leads to a large negative magnetoconductivity. In the strong magnetic-field region the MC exhibits deep dips with increasing magnetic field. The oscillating behavior is attributed to the interplay between the discrete Landau levels and the Fermi surface. The decrease of the MC at low magnetic field is caused by the s-d exchange interaction between the electron in the conduction band and the magnetic ions. The spin polarization increases rapidly with increasing magnetic field and the longitudinal current becomes spin polarized in strong magnetic field. The effect of spin-disorder scattering on MC is estimated numerically for low magnetic fields and found to be neglectible for our system.

Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses. (C) 2001 American Institute of Physics.

Range-Gated Laser Stroboscopic Imaging for Night Remote Surveillance

For night remote surveillance, we present a method, the range-gated laser stroboscopic imaging(RGLSI), which uses a new kind of time delay integration mode to integrate target signals so that night remote surveillance can be realized by a low-energy illuminated laser. The time delay integration in this method has no influence on the video frame rate. Compared with the traditional range-gated laser imaging, RGLSI can reduce scintillation and target speckle effects and significantly improve the image signal-to-noise ratio analyzed. Even under low light level and low visibility conditions, the RGLSI system can effectively work. In a preliminary experiment, we have detected and recognized a railway bridge one kilometer away under a visibility of six kilometers, when the effective illuminated energy is 29.5 mu J.

Room temperature operation of photonic-crystal distributed-feedback quantum cascade lasers with single longitudinal and lateral mode performance

We demonstrate room temperature operation of photonic-crystal distributed-feedback quantum cascade lasers emitting at 4.7 mu m. A rectangular photonic crystal lattice perpendicular to the cleaved facet was defined using holographic lithography. The anticrossing of the index- and Bragg-guided dispersions of rectangular lattice forms the band-edge mode with extended mode volume and reduced group velocity. Utilizing this coupling mechanism, single mode operation with a near-diffractive-limited divergence angle of 12 degrees is obtained for 33 mu m wide devices in a temperature range of 85-300 K. The reduced threshold current densities and improved heat dissipation management contribute to the realization of devices' room temperature operation.

Phase locking of fibre lasers by self-imaging resonator

Experimental demonstrations of the use of a self-imaging resonator in the phase locking of two fibre lasers are presented. The output power of the phase-locked fibre laser array exceeded 2 W Successful attempts of phase locking show that the fibre laser array is not only capable of producing high Output Power but also large on-axis intensity by this method.

A novel ultra-narrow transmission-band fiber Bragg grating and its application in a single-longitudinal-mode fiber laser with improved efficiency

A novel design approach to ultra-narrow transmission-band fiber Bragg grating (FBG) is proposed and demonstrated for the first time. The new grating consists of multiple identical distributed-Bragg reflector (DBR) cavities and a it-phase-shifted gap, and hence, the proposed laser is constructed by the cascade of these identical DBR fiber lasers. By manufacturing the proposed grating in a piece of Er-Yb codoped fiber, a single-wavelength single-longitudinal-mode (SLM) fiber laser with improved efficiency is demonstrated experimentally. The experimental results show that the pump-to-signal conversion efficiency of the proposed laser is improved by a factor of two in comparison with the optimized distributed-feedback (DFB) fiber lasers. (c) 2007 Elsevier B.V. All rights reserved.