Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors

Neutron-irradiated high-resistivity silicon detectors have been subjected to elevated temperature annealing (ETA). It has been found that both detector full depletion voltage and leakage current exhibit abnormal annealing (or ''reverse annealing'') behaviour for highly irradiated detectors: increase with ETA. Laser induced current measurements indicate a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) data show that the dominant effect is the increase of a level at 0.39 eV below the conduction band (E(c) - 0.39 eV) or a level above the valence band (E(v) + 0.39 eV). Candidates tentatively identified for this level are the singly charged double vacancy (V-V-) level at E(c) - 0.39 eV, the carbon interstitial-oxygen interstitial (C-i-O-i) level at E(v) + 0.36 eV, and/or the tri-vacancy-oxygen center (V3O) at E(v) + 0.40 eV.

Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations

Neutron induced defect levels in high resistivity silicon detectors have been studied using a current-based macroscopic defect analysis system: thermally stimulated current (TSC) and current deep level transient spectroscopy (I-DLTS). These studies have been correlated to the traditional C-V, I-V, and transient current and charge techniques (TCT/TChT) after neutron radiation and subsequent thermal anneals. It has been found that the increases of the space charge density, N-eff, in irradiated detectors after thermal anneals (N-eff reverse anneal) correspond to the increases of deep levels in the silicon bandgap. In particular, increases of the double vacancy center (V-V and V-V-- -) and/or C-i-O-i level have good correlations with the N-eff reverse anneal. It has also been observed that the leakage current of highly irradiated (Phi(n) > 10(13) n/cm(2)) detectors increases after thermal anneals, which is different from the leakage current annealing behavior of slightly irradiated (Phi(n) < 10(13) n/cm(2)) detectors. It is apparent that V-V center and/or C-i-O-i level play important roles in both N-eff and leakage current degradations for highly irradiated high resistivity silicon detectors.

Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)

Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p(+)-n-n(+)) induced by very high fluence neutron (VHFN) irradiation (1.7x10(15) n/cm(2)). As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels (E(t) < 0.33 eV) are in the order of 10(13)cm(-3), while those for relatively deep levels (E(t) > 0.33 eV) are in the order of 10(14) cm(-3). TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (N-eff) in the order of 2x10(14) cm(-3). Both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal.

DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS

Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.

Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate

The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. Such results indicate that the effective work function of the metal/high-k stack is also governed by the electron state density of the metal.

Prolate and oblate shape coexistence in Pt-188

A standard in-beam gamma-spectroscopy experiment for Pt-188 is performed via the Yb-176(O-18, 6n) reaction at beam energies of 88 and 95 MeV, and the level scheme for (188) Pt is established. Prolate and oblate shape coexistence has been demonstrated to occur in Pt-188 by applying the projected shell model. The rotation alignment of i(13/2) neutrons drives the yrast sequence changing suddenly from prolate to oblate shape at angular momentum 10th, indicating likely a new type of shape phase transition along the yrast line in Pt-188.

Band properties of the transitional nucleus Pt-187

High-spin states in Pt-187 have been studied experimentally using the Yb-173(O-18, 4n) reaction at beam energies of 78 and 85 MeV. The previously known bands based on the nu i(13/2),nu 7/2(-)[503], and nu i(13/2)(2)nu j configurations have been extended to high-spin states, and new rotational bands associated with the nu 3/2(-)[512] and nu 1/2(-)[521] Nilsson orbits have been identified. The total Routhian surface calculations indicate that the transitional nucleus Pt-187 is very soft with respect to beta and gamma deformations. The band properties, such as level spacings, band crossing frequencies, alignment gains, and signature splittings, have been compared with the systematics observed in neighboring nuclei and have been interpreted within the framework of the cranked shell model. The rotational bands show different band crossing frequencies, which can be explained by the alignment either of i(13/2) neutrons or of h(9/2) protons. Importantly, evidence is presented for a pi h(9/2) alignment at very low frequency in the nu 7/2(-)[503] band. The proton nature of the band crossing is strongly suggested by comparing the measured B(M1;I -> I-1)/B(E2;I -> I-2) ratios with the theoretical values from the semiclassical Donau and Frauendof approach.

Observation of negative-parity high spin states of Cs-126

The nucleus Cs-126 was investigated by means of in-beam gamma-ray spectroscopy techniques using the Nordball detector system at the Niels Bohr Institute. Excited states of Cs-126 were populated via the Cd-116(N-14, 4n)Cs-126 reaction at a beam energy of 65 MeV. The Cs-126 level scheme was considerably extended, especially at negative parity and about 40 new levels and 70 new transitions were added into the level scheme. The previously reported negative-parity rotational bands, built on pi g(7/2)circle times nu h(11/2),pi d(5/2)circle times nu h(11/2),pi h(11/2)circle times nu g(7/2), and pi h(11/2)circle times nu d(5/2) configurations, have been extended and evolve into bands involving rotationally aligned (pi h(11/2))(2) and (nu h(11/2))(2) quasiparticles. Two new rotational bands have been tentatively assigned the pi h(11/2)circle times nu s(1/2) and pi g(9/2)circle times nu h(11/2) configurations, respectively