Macrozoobenthos in 2 shallow mesotrophic Chinese lakes with contrasting sources of primary production

Comparative studies on macrozoobenthos were done in 2 shallow mesotrophic lakes in the middle basins of the Yangtze River, China: Lake Biandantang where macrophytes were abundant, and Lake Houhu where macrophytes were scarce Samples were taken monthly at 4 stations in each lake from April 1997 to March 1999, and a total of 67 and 31 tara of macrozoobenthos were recorded in Lake Biandantang and Lake Houhu, respectively. Both annual mean density and biomass of macrozoobenthos were higher in Lake Biandantang than in Lake Houhu: 780 vs 532 indivials/m(2) and 37.1 vs 25.9 g wet mass/m(2), respectively. Abundance of functional feeding groups followed the order: scraper > collector > predator > shredder in Lake Biandantang, and collector > predator > scraper > shredder in Lake Houhu. Only 1 density peak occurred from winter to early spring in Lake Houhu; however, in Lake Biandantang, there were 2 peaks, the winter peak and spring peak. K-dominance curves and Shannon-Wiener, Simpson, and Margelef indices indicated that macrozoobenthos were more diverse in Lake Biandantang than in Lake Houhu Our study suggests that, in shallow lakes, submerged macrophytes are essential for the maintenance of biodiversity of macrozoobenthos mainly because the macrophytes increase habit heterogeneity and availability of suitable food, and may also decrease predation by fish on the macrozoobenthos.

A comparative study of benthic nematodes in two Chinese lakes with contrasting sources of primary production

Ecological studies on benthic nematodes were conducted in two small, shallow lakes in the middle Yangtze basin, China; Lake Houhu, where the main source of primary production is phytoplankton and Lake Biandantang where it is predominantly macrophytic in origin. Monthly sampling was carried out from April 1996 to March 1997. A total of 36 species of nematodes was found in Lake Houhu and 51 species in Lake Biandantang. The dominant trophic groups of nematodes were algophages in Lake Houhu and bacteriophages associated with omniphages and phytophages in Lake Biandantang. Community analyses based on K-dominance curves, Shannon-Wiener and Simpson diversity indices, demonstrate that the benthic nematodes are more diverse in Lake Biandantang than in Lake Houhu. The results suggest that the abundance of submerged vegetation is essential for maintenance of habitat heterogeneity and biodiversity of nematodes in shallow lakes.

Polycyclic aromatic hydrocarbons in Ya-Er Lake (Hubei, China): sources and distribution

Sources and distribution of polycyclic aromatic hydrocarbons (PAH) in the Ya-Er Lake area (Hubei, China) sediment cores of 3 ponds in the shallow Ya-Er Lake were investigated for 16 PAH. Analytical procedure included extraction by ultrasonication, clean-up by gel-permeation and quantification by HPLC with fluorescence detection. The total PAH amount in sediment samples of the Ya-Er Lake ranged from 68 to 2242 mu g/kg. Concentrations decreased from pond 1 to pond 3 and from upper to lower sediment layers. In addition a soil sample from Ya-Er Lake area showed a total PAH amount of 58 mu g/kg. The PAH pattern in lower sediment layers were similar to that of the soil sample which indicates an atmospheric deposition into the sediments prior to 1970 only. The PAH profile of upper sediment samples, which differs completely from that of lower layers, may be explained by a gradually increasing input of mixed combustion and raw fuel sources since 1970. Therefore the origin of increased PAH contamination in Ya-Er Lake during the last 3 decades has been probably an industrial waste effluent in pond 1.

n-type Ge-SiGe quantum cascade structure utilizing quantum wells for electrons in the L and Gamma valleys

In this letter, we propose an n-type vertical transition bound-to-continuum Ge-SiGe quantum cascade structure utilizing electronic quantum wells in the L and F valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. Under a bias of 80 kV/cm, the carriers in the lower level are extracted by miniband transport and L - Gamma tunneling into the subband in the Gamma well of the next period. And then the electrons are injected into the upper level by ultrafast intervalley scattering, which not only effectively increases the tunneling rate and suppresses the thermal backfilling of electrons, but also enhances the injection efficiency of the upper level. The performance of the laser is discussed.

Electrically Driven InAs Quantum-Dot Single-Photon Sources

Electrically driven single photon source based on single InAs quantum dot (QDs) is demonstrated. The device contains InAs QDs within a planar cavity formed between a bottom AlGaAs/GaAs distributed Bragg reflector (DBR) and a surface GaAs-air interface. The device is characterized by I-V curve and electroluminescence, and a single sharp exciton emission line at 966nm is observed. Hanbury Brown and Twiss (HBT) correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80K

Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy

Raman spectroscopy technique has been performed to investigate the stress induced in as-grown silicon-on-sapphire (SOS), solid-phase-epitaxy (SPE) re-grown SOS, and Si/gamma-Al2O3/Si double-heteroepitaxial thin films. It was demonstrated that the residual stress in SOS film, arising from mismatch and difference of thermal expansion coefficient between silicon and sapphire, was reduced efficiently by SPE process, and that the stress in Si/gamma-Al2O3/Si thin film is much smaller than that of as-grown SOS and SPE upgraded SOS films. The stress decrease for double heteroepitaxial film Si/gamma-Al2O3/Si mainly arises from the smaller lattice mismatching of 2.4% between silicon top layer and the gamma-Al2O3/Si epitaxiial composite substrate, comparing with the large lattice mismatch of 13% for SOS films. It indicated that gamma-Al2O3/Si as a silicon-based epitaxial substrate benefits for reducing the residual stress for further growth of silicon layer, compared with on bulk sapphire substrate. (c) 2005 Elsevier B.V. All rights reserved.

An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Gamma point

In this paper, an n-type Si1-xGex/Ge (x >= 0.85) quantum cascade (QC) structure utilizing a deep Ge quantum well for electrons at the Gamma point is proposed. Based on linear interpolation, a conduction band offset at the Gamma point in a Si1-xGex/Ge ( x >= 0.85) heterostructure is presented, which is suitable for designing a QC laser. This approach has the advantages of a large conduction band offset at the Gamma point, a low lattice mismatch between the Si1-xGex/Ge ( x >= 0.85) active layers and the Si1-yGey ( y > x) virtual substrate, a small electron effective mass in the Gamma band, simple conduction energy band structures and a simple phonon scattering mechanism in the Ge quantum well. The theory predicts that if high-energy electrons are continuously injected into the Gamma band, a quasi-equilibrium distribution of electrons between the Gamma and L bands can be reached and held, i.e., electrons with a certain density will be kept in the Gamma band. This result is supported by the intervalley scattering experiments. In n-type Si1-xGex/Ge ( x >= 0.85) QC structures, population inversion between the laser's upper and lower levels is demonstrated.

Peculiar photocurrent response due to Gamma-X coupling in a GaAs/AlAs heterostructure

Peculiar current jumps and hysteresis in current-voltage curves are reported in an illuminated heterostructure consisting basically of a thick AlAs layer and a narrow GaAs quantum well. These novel features come from the photon-assisted transfer of electron-hole pairs and the resultant charge polarization in the structure, mainly caused by the resonant Gamma-X coupling at the heterointerfaces. Using the transfer-matrix method, the simulated current density-voltage curve reproduces the main features of the experimental observations in the case where the influence of resonant Gamma-X coupling at the heterointerfaces is included, further confirming the physical mechanism involved. The structure presented here may be used as a new type of photonic memory cell and also as an optically controlled switch.

Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer

High quality ZnO films have been successfully grown on a Si (100) substrate by metal organic chemical vapour deposition with a gamma-Al2O3 buffer. The crystal structure, surface morphology and optical properties of the ZnO films were characterized by x-ray diffraction, Raman spectroscopy, atomic force microscopy and photoluminescence (PL) spectroscopy. The propel-ties of the films with the Al2O3 buffer were improved in comparison with those of as-grown ZnO films. It is shown that the ZnO films with the gamma-Al2O3 buffer grown on Si (100) substrates have a highly-preferential c-axis (0002) orientation, a narrow (0002) peak, smooth surface morphology and better PL spectral properties. This demonstrates that the use of gamma-Al2O3/Si as a ZnO substrate is beneficial for reducing the residual stress for further growth of ZnO films, compared with the growth on bulk Si substrates.

Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si

In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si/gamma-Al2O3/Si. First, single crystalline gamma-Al2O3 (100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si/gamma-Al2O3 (100)/Si(100) SOI materials are characterized in detail by RHEED, XRD and AES techniques. The results demonstrate that the device-quality novel SOI materials Si/gamma-Al2O3 (100)/Si(100) has been fabricated successfully and can be used for application of MOS device.

Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy

N-p-n Si/SiGe/Si heterostructure has been grown by a disilane (Si2H6) gas and Ge solid sources molecular beam epitaxy system using phosphine (PH3) and diborane (B2H6) as n- and p-type in situ doping sources, respectively. X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) measurements show that the grown heterostructure has a good quality, the boron doping is confined to the SiGe base layer, and the Ge has a trapezoidal profile. Postgrowth P implantation was performed to prepare a good ohmic contact to the emitter. Heterojunction bipolar transistor (HBT) has been fabricated using the grown heterostructure and a common-emitter current gain of 75 and a cut-off frequency of 20 GHz at 300 K have been obtained. (C) 2001 Elsevier Science B.V. All rights reserved.

Raman-forbidden mode and oxygen ordering in Bi2Sr2-xLaxCuO6+gamma single crystals annealed in oxygen

A Raman-forbidden phonon mode at about 840 cm(-1) is observed popularly on the surface of pun and La-doped Bi2Sr2-xLaxCuO6+y (0 less than or equal to x less than or equal to 0.8) single crystals annealed in oxygen. A remarkable excitation dependence of this additional line is found. Based on the properties of the structure of the Bi-O layer with excess oxygen atoms and the similarity in the appearance of the Raman-forbidden modes between RBa2Cu3Ox (R = Y, Nd, Gd, Pr) and Bi2Sr2-xLaxCuO6+y systems, we attribute the manifestation of this additional line to the ordering of the interstitial oxygen in the Bi-O layers. Our results provide Raman evidences for confirming that the ordering of the movable oxygen may exist universally in high-temperature superconductors.

Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer

Wurtzite GaN films have been grown on (001) Si substrates using gamma-Al2O3 as an intermediate layer by low pressure (similar to 76 Torr) metalorganic chemical vapor deposition. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin gamma-Al2O3 layer of "compliant" character was an effective intermediate layer for the GaN film grown epitaxially on Si. The narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 mu m GaN sample was 54 arcmin. The orientation relationship of GaN/gamma-Al2O3/Si was (0001) GaN parallel to(001) gamma-Al2O3 parallel to(001) Si, [11-20] GaN parallel to[110] gamma-Al2O3 parallel to[110] Si. The photoluminescence measurement for GaN at room temperature exhibited a near band-edge peak of 365 nm (3.4 eV). (C) 1998 American Institute of Physics.

Upgrading of liquid fuel from the vacuum pyrolysis of biomass over the Mo-Ni/gamma-Al2O3 catalysts

High amounts of acid compounds in bio-oil not only lead to the deleterious properties such as corrosiveness and high acidity, but also set up many obstacles to its wide applications. By hydrotreating the bio-oil under mild conditions, some carboxylic acid compounds could be converted to alcohols which would esterify with the unconverted acids in the bio-oil to produce esters. The properties of the bio-oil could be improved by this method. In the paper, the raw bio-oil was produced by vacuum pyrolysis of pine sawdust. The optimal production conditions were investigated. A series of nickel-based catalysts were prepared. Their catalytic activities were evaluated by upgrading of model compound (glacial acetic acid). Results showed that the reduced Mo-10Ni/gamma-Al2O3 catalyst had the highest activity with the acetic acid conversion of 33.2%. Upgrading of the raw bio-oil was investigated over reduced Mo-10Ni/gamma-Al2O3 catalyst. After the upgrading process, the pH value of the bio-oil increased from 2.16 to 2.84. The water content increased from 46.2 wt.% to 58.99 wt.%. The H element content in the bio-oil increased from 6.61 wt.% to 6.93 wt.%. The dynamic viscosity decreased a little. The results of GC-MS spectrometry analysis showed that the ester compounds in the upgraded bio-oil increased by 3 times. it is possible to improve the properties of bio-oil by hydrotreating and esterifying carboxyl group compounds in the bio-oil.

MoNi/gamma-Al2O3 Catalyst: Preparation and Catalytic Activity for Acetic Acid Hydrotreating

MoNi/gamma-Al2O3 catalysts were prepared by the impregnation method. The catalyst samples were characterized by XRD and TPR. The effects of Mo promoter content and the catalyst reducing temperature Oil hydrotreatment activity of the catalyst were studied under 200 degrees C and 3 MPa hydrogen pressure using acetic acid as the model compound. The XRD results indicate that the addition of Mo promoter is beneficial to the uniformity of nickel species on the catalyst and decreases the Interaction between nickel species and the support Which results in the decrease the of NiAl2O4 spinel formation. The addition of Mo promoter also decreases the reducing temperature of the catalyst. After the catalyst of 0.06 MoNi/gamma-Al2O3 being reduced Under the atmosphere of H-2/N-2(5/95, V/V), nickel oxide was reduced to Ni-0. The reaction was promoted obviously upon the addition of the MoNi/gamma-Al2O3 catalyst reduced at 600 degrees C. The Mo-modified Ni/gamma-Al2O3 catalyst reduced at 600 degrees C displayed the highest activity during the reaction, the conversion of acetic acid reached the highest point of 33.2%. The products included ethyl acetate and water.