用GSMBE法生长匹配型GaInAsP/InP材料及量子阱、面发射激发器结构的研究

报道通过在位组分调整,配合X射线双晶衍射测试和光致发光测试,生长了与InP精确匹配的GaLnAsP(失配度达4×10~(-4)).生长了GaInAs/InP量子阱结构的光致发光半峰宽达5.72meV.实验表明源炉档板开启 后生长速率是不均匀的,这对生长量子阱和DBR结构是个值得注意的问题,经考虑生长速率变化后生长的面发射激光器结构样片的反射率谱与理论计算的结果很好地相符.

Polarization switching current of vertical cavity surface-emitting Lasers in an applied electric field

The polarization of vertical-cavity surface-emitting laser (VCSEL) can be controlled by electro-optic birefringence. We calculated the birefringence resulted from external electric field which was imposed on the top DBR of VCSEL by assuming that the two polarization modes were in the same place of the gain spectra in the absence of electric field beginning. By modifying SFM, the affection of the electric field strength on the polarization switching currents between the two polarization modes had been shown.

Investigation on integrated high speed DFB light source and narrow bandwidth RCE photodetector for WDM fiber communication network application

Electroabsorption (EA) modulator integrated with partially gain coupling distributed feedback (DFB) lasers have been fabricated and shown high single mode yield and wavelength stability. The small signal bandwidth is about 7.5 GHz. Strained Si1-chiGechi/Si multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetectors with SiO2/Si distributed Bragg reflector (DBR) as the mirrors have been fabricated and shown a clear narrow bandwidth response. The external quantum efficiency at 1.3 mum is measured to be about 3.5% under reverse bias of 16 V. A novel GaInNAs/GaAs MQW RCE p-i-n photodetector with high reflectance GaAs/ALAs DBR mirrors has also been demonstrated and shown the selectively detecting function with the FWHM of peak response of 12 nm.

Single ridge waveguide electroabsorption modulated DFB laser for 2.5Gb/s transmission

In this paper we proposed a single ridge waveguide electroabsorption modulated distributed feedback laser (EML) for long-haul high-speed optical fiber communication system. This EML was successfully fabricated by two step metal organic vapor phase epitaxy (MOVPE) including selective area growth (SAG) and helium partially implantation. No obvious changes of the threshold current (< 0.2 mA), extinction ratio (< 0.1 dB), output power (< 0.2 dBm) and isolation resistance were achieved in the preliminary aging test. With 2.5 Gb/s NRZ modulation, no power penalty was observed after the optical signal was transmitted through 280 Km normal single mode fiber.

Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes

A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR.

Visible vertical cavity surface emitting laser

We have designed and fabricated the visible vertical-cavity surface-emitting lasers (VCSEL's) by using metalorganic vapor phase epitaxy (MOVPE). We use the 8 lambda optical cavities with 3 quantum wells in AlGaInP/AlGaAs red VCSEL's to reduce the drift leakage current and enhance the model gain in AlGaInP active region. The structure has a p-type stack with 36 DBR pairs on the top and an n-type with 55-1/2 pairs on the bottom. Using micro-area reflectance spectrum, we try to get a better concordance between the center wavelength of DBR and the emitting wavelength of the active region. We used a component graded layer of 0.05 lambda thick (x = 0.5 similar to 0.9) at the p-type DBR AlGaAs/AlAs interface to reduce the resistance of p-type DBR. We use selective oxidation to define the current injection path. Because the oxidation rate of a thick layer is faster than a thinner one, we grown a thick AlAs layer close to the active region. In this way, we got a smaller active region for efficient confinement of injected carriers (the aperture area is 3 x 3 mu m) to reduce the threshold and, at the same time, a bigger conductive area in the DBR layers to reduce the resistance. We employ Zn doping on the p-side of the junction to improve hole injection and control the Zn dopant diffusion to get proper p-i-n junction. At room temperature, pulse operation of the laser has been achieved with the low threshold current of 0.8mA; the wavelength is about 670nm.

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)

Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%.

Tunability of resonant wavelength by Fabry-Perot microcavity in organic light-emitting diodes

Distributed Bragg reflectors (DBR) with different reflection wavelengths were designed, and were used to fabricate microcavity organic light-emitting diodes (OLEDs) based on tris(8-hydroxyquinoline)-aluminum (Alq(3)) as the emitter and N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine (NPB) as the hole-transporting layer. The microcavity was composed of DBR dielectric mirror and metal electrode aluminum (Al) mirror. Some effects of vertical optical Fabry-Perot microcavity on spontaneous emission in OLEDs were investigated. Spectral narrowing, enhancement of emitting intensity and anglular dependence of emission were observed due to the microcavity effect. It was found experimentally that the utilization of DBR is a better method to adjust the emissive mode in the resonant cavity in OLEDs well. Thus the realization of different color light emission becomes possible by the combination of carefully designed microcavity and electroluminescent organic semiconductors in a single LED.

Microcavity effects on emissive color and electroluminescent performance in organic light-emitting diodes

Microcavity organic light-emitting diodes having a top metal mirror and a bottom dielectric mirror, which was distributed Bragg reflectors (DBR) fabricated by using TiO2-SiO2 alternative dielectric multilayer with a central stop-band and two sub-stop-bands, were fabricated. In the devices, the active layers consisted of a hole-transporting layer N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) and an electron- transporting/emitting layer tris(8-hydroxy-quinoline) aluminum (Alq(3)). The relationship of the electroluminescent (EL) spectrum and efficiency with the thickness of the active layer and metal layer was studied. It was found that the EL emissive color did not strongly depend on the thickness of the organic layer and metal layer, which was attributed to the excellent photon confinement role of the narrow stop-band of the used dielectric mirror. Thus, high efficiency microcavity organic light-emitting diodes were achieved, and the peak wavelength and color purity were not obviously changed, via optimizing the thickness of organic layer and metal electrode.

High efficiency red organic light-emitting diodes based on microcavity structure

We demonstrate high efficiency red organic light-emitting diodes (OLEDs) based on a planar microcavity comprised of a dielectric mirror and a metal Mirror. The microcavity devices emitted red light at a peak wavelength of 610 nm with a full width at half maximum (FWHM) of 25 nm in the forward direction, and an enhancement of about 1.3 factor in electroluminescent (EL) efficiency has been experimentally achieved with respect to the conventional noncavity devices. For microcavity devices with the structure of distributed Bragg reflectors (DBR)/indium-tin-oxide(ITO)/V2O5/N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine(NPB)/4-(dicy-anome-thylene)-2-t-butyl-6(1,1,7,7-tetrame-thyljulolidyl-9-enyl)-4H-pyran(DCJTB):tris(8-hydroxyquinoline) aluminium (Alq(3))/Alq(3)/LiF/Al, the maximum brightness arrived at 37000 cd/m(2) at a current density of 460.0 mA/cm(2), and the current efficiency and power efficiency reach 13.7 cd/A at a current density of 0.23 mA/cm(2) and 13.3 lm/W respectively.

Lasing behavior in DCM-doped PVK microcavity

A surface emitting microcavity was formed by sandwiching a polymer film containing PVK, Alq(3) and DCM between a distributed Bragg reflector (DBR) with a reflectivity of 99% and a silver film (300 nm). The lasing phenomenon was observed in DCM-doped PVK microcavity. The full width at half maximum (FWHM) was 0.6 nm with the peak wavelength at 603 nm. The threshold energy for lasing was estimated to be about 2.5 mu J per pulse. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Photoluminescent properties of organic film in flat optical microcavity

The microcavity is sandwiched between a quarterwavelength distributed Bragg reflector(DBR) and a metal Ag reflective mirror. A single layer of a Tris(8-quinolinolato)aluminum (Alq) film was used as the light-emitting layer. The photoluminescent properties of the optical microcavity and that of the Alq film were studied at the same excitation condition. Compared with the Alq film,the significantly narrowed spectral emission linewidth from 90 nm to 10 nm was observed, the PL emission intensity of the microcavity at the resonant mode is enhanced by the order of 1. The spectral narrowing and intensity enhancement of the microcavity is attributed to the microcavity effect.

Photoluminescent properties of dye-doped poly(N-vinyleabzole) (PVK) in microcavity

A surface emitting microcavity was formed by sandwiching a polymer film containing poly(N-vinyleabzole) (PVK). 8-hydroxyquinoline aluminium (Alq(3)) and 4-(Dicyanome thylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-Pyran(DCM) between a distributed Bragg reflector (DBR) with a reflectivity of 99% and a silver film. The sample was optically pumped with 250 ps pulses at 2 Hz repetition rate by a 355 nm line of the third harmonic of a mode-lock Nd:YAG laser. The lasing phenomenon was observed in DCM-doped PVK microcavity. The full width at half maximum (FWHM) was 3 nm with the peak wavelength at 602 nm. The threshold energy for lasing was estimated to be about 3 mu J. (C) 2000 Elsevier Science S.A. All rights reserved.

Spontaneous emission properties of organic film in plane optical microcavity

The spontaneous emission properties of a single layer organic film in plane optical microcavities were studied. Optical microcavity was formed by a Tris(8-quinolinolato) aluminium (Alq) film sandwiched between a distributed Bragg reflector (DBR) and a Ag metallic reflector. Two kinds of microcavities were devised by using a different DBR structure. Compared with a Alq film, significantly spectral narrowing and intensity enhancement was observed in the two microcavities, which is attributed to the microcavity effect. The spectra characteristics of the two microcavities showed that the structure of DBR has much influence on the emission properties of a microcavity. (C) 2000 Elsevier Science S.A. All rights reserved.

聚合物微腔的研制及其特性分析

采用BMPPVPVK的混合物作为有源介质，将其按一定比例溶于氯仿中，并旋涂在具有99.5%反射率的DBR上，其上蒸发300nm的银膜，形成了面发射型微腔结构．其中DBR为入射腔面，银膜为反射腔面，在激发波长337.1nm，频率20Hz，脉宽10ns的氮分子激光器的泵浦下，光谱明显窄化，出现了460nm和530nm两个比较强的发光峰，主峰为460nm半宽度为7nm.