550 resultados para Yb:YAG


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从机理上讨论了激光诱导放电采用阴极性放电可改善放电坑形貌,并从实验上得出放电坑直径在不同放电介质下随放电脉宽的变化关系。当工件表面涂层为聚四氟乙烯时,研究了放电坑由单坑变为多坑形貌的原因是电脉冲后期通道中电子供给不足,电弧由聚集型过渡到扩散型,导致阳极斑点不稳定。

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Experiments of autogenous laser full penetration welding between dissimilar cast Ni-based superalloy K418 and alloy steel 42CrMo flat plates with 3.5 mm thickness were conducted using a 3 kW continuous wave (CW) Nd:YAG laser. The influences of laser welding velocity, flow rate of side-blow shielding gas, defocusing distance were investigated. Microstructure of the welded seam was characterized by optical microscopy (OM), scanning electron microscopy (SEM) and X-ray diffraction (XRD) and energy dispersive spectrometer (EDS). Mechanical properties of the welded seam were evaluated by microhardness and tensile strength testing. Results show that high quality full penetration laser-welded joint can be obtained by optimizing the welding velocity, flow rate of shielding gas and defocusing distance. The laser-welded seam have non-equilibrium solidified microstructures consisting of gamma-FeCr0.29Ni0.16C0.06 austenite solid solution dendrites as the dominant and very small amount of super-fine dispersed Ni3Al gamma' phase and Laves particles as well as MC needle-like carbides distributed in the interdendritic regions. Although the microhardness of the laser-welded seam was lower than that of the base metal, the strength of the joint was equal to that of the base metal and the fracture mechanism showed fine ductility. (c) 2007 Elsevier B.V. All rights reserved.

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研究了在空气、油膜和绝缘树脂薄膜这三种放电介质中的伏安特性,得出了在同一介质中,通道电极间电压不随其它初始条件改变而变化,只与放电介质对通道箍缩能力成正比,在本实验中薄膜的通道电压最高80.4V,空气中最低26.0V。通道中电流波形与放电介质有关,同样的高低压组合、相同放电脉宽下在空气和油膜中为矩形波,而在薄膜中为三角波,峰值电流变化不大。电流波形不随脉宽的改变而变化,当增大初始高压端或低压端输入时,电流随之增加,并且低压端输入对提高峰值电流更有效果。

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二十世纪八十年代,当比利时冶金研究中心(CRM)开发出CO_2激光毛化冷轧辊技术后,尝试用YAG激光进行轧辊毛化一直吸引着众多的研究者,这是因为YAG(1.06μm)激光波长比CO_2(10.6μm)激光波长短一个量级,材料对YAG激光有更高的吸收率,并用YAG激光可以聚焦到更小的光斑尺寸,同时使用电信号驱动的声光开关技术便于对毛化分布进行可设定控制。但是用传统声光调制的YAG激光虽然可以碇以很高的脉冲频率(>30kHz),但单脉冲有量仅为10mJ左右,难以达到辊面毛化粗糙度的要求,因此人们认为YAG激光用于毛化的主要困难是脉冲能量太小。

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IN this paper, the engraving process with Q-Switched Nd:YAG laser is investigated. High power density is the pre- requisition to vapor materials, and high repetition rate makes the engraving process highly efficient. An acousto- optic Q-Switch is applied in the cavity of CW 200 W Nd:YAG laser to achieve the high peak power density and the high pulse repetition rate. Different shape craters are formed in a patterned structure on the material surface when the laser beam irradiates on it by controlling power density, pulse repetition rate, pulse quantity and pulse interval. In addition, assisting oxygen gas is used for not only improving combustion to deepen the craters but also removing the plasma that generated on the top of craters. Off-focus length classified as negative and positive has a substantial effect on crater diameters. According to the message of rotating angle positions from material to be engraved and the information of graph pixels from computer, a special graph is imparted to the material by integrating the Q- Switched Nd:YAG laser with the computer graph manipulation and the numerically controlled worktable. The crater diameter depends on laser beam divergence and laser focal length. The crater diameter changes from 50 micrometers to 300 micrometers , and the maximum of crater depth reaches one millimeter.

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实验研究了YAG激光诱导放电(LGD)表面离散强化形貌,包括强化点的表面形貌和横截面形貌.利用放电过程中的电弧压力,对强化点表面进行造型.大电流、倾斜放电容易将熔凝物吹起形成凹坑和突起,表面起伏更加明显,而小电流、垂直放电则能得到平坦的表面,有利于增大强化深度.随脉冲宽度的增加,强化点的径深比逐渐变小,在相同强化深度下,小电流、长脉冲宽度可以获得小径深比、厚深状的强化点,而大电流、短脉冲宽度可以获得大径深比、扁平状的强化点.在现有实验条件下,在电流150 A,脉冲宽度9.83 ms下得到最大强化深度为 0.479 mm,径深比为3.9

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Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.

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Damage threshold of crystals SiO2 and YAG against 60-900 fs, 800 nm laser pulses are reported. The breakdown mechanisms were discussed based on the double-flux model and Keldysh theory. We found that impact ionization plays the important role in the femtosecond laser-induced damage in crystalline SiO2, while the roles of photoionization and impact ionization in YAG crystals depend on the laser pulse durations. (C) 2007 Elsevier B.V. All rights reserved.