Near-field x-ray phase contrast imaging and phase retrieval algorithm

Theoretical analyses of x-ray diffraction phase contrast imaging and near field phase retrieval method are presented. A new variant of the near field intensity distribution is derived with the optimal phase imaging distance and spatial frequency of object taken into account. Numerical examples of phase retrieval using simulated data are also given. On the above basis, the influence of detecting distance and polychroism of radiation on the phase contrast image and the retrieved phase distribution are discussed. The present results should be useful in the practical application of in-line phase contrast imaging.

Attosecond X-ray pulse obtained from linear Thomson scattering

Linear Thomson scattering by a relativistic electron of a short pulse laser has been investigated by computer simulation. Under a laser field with a pulse of 33.3-fs full-width at half-maximum, and the initial energy of an electron of gamma(0) = 10, the motion of the electron is relativistic and generates an ultrashort radiation of 76-as with a photon wave length of 2.5-nm in the backward scattering. The radiation under a high relativistic energy electron has better characteristic than under a low relativistic energy electron in terms of the pulse width and the angular distribution. (c) 2005 Elsevier GrnbH. All rights reserved.

Instability of solution of phase retrieval in direct diffraction phase-contrast imaging with partially coherent X-ray source

The theoretical model of direct diffraction phase-contrast imaging with partially coherent x-ray source is expressed by an operator of multiple integral. It is presented that the integral operator is linear. The problem of its phase retrieval is described by solving an operator equation of multiple integral. It is demonstrated that the solution of the phase retrieval is unstable. The numerical simulation is performed and the result validates that the solution of the phase retrieval is unstable.

Technique for diagnosing x-ray laser beam quality by use of the moire signal

We present what we believe is a novel technique based on the moire effect for fully diagnosing the beam quality of an x-ray laser. Using Fresnel diffraction theory, we investigated the intensity profile of the moire pattern when a general paraxial beam illuminates a pair of Ronchi gratings in the quasi-far field. Two formulas were derived to determine the beam quality factor M-2 and the effective radius of curvature R-e from the moire pattern. On the basis of the results, the far-field divergence, the waist location, and the radius can be calculated further. Finally, we verified the approach by use of numerical simulation. (C) 1999 Optical Society of America [S0740-3232(99)01502-1].

Precise determination of anomalous scattering factors of Ge by using X-ray resonant scattering

Variations of peak position of the rocking curve in the Bragg case are measured from a Ge thin crystal near the K-absorption edge. The variations are caused by a phase change of the real part of the atomic scattering factor. Based on the measurement, the values of the real part are determined with an accuracy of better than 1%. The values are the most reliable ones among those reported values so far as they are directly determined from the normal atomic scattering factors.

Al2O3/SiO2 films prepared by electron-beam evaporation as UV antireflection coatings on 4H-SiC

Al2O3/SiO2 films have been deposited as UV antireflection coatings on 4H-SiC by electron-beam evaporation and characterized by reflection spectrum, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The reflectance of the Al2O3/SiO2 films is 0.33% and 10 times lower than that of a thermally grown SiO2 single layer at 276 nm. The films are amorphous in microstructure and characterize good adhesion to 4H-SiC substrate. XPS results indicate an abrupt interface between evaporated SiO2 and 4H-SiC substrate free of Si-suboxides. These results make the possibility for 4H-SiC based high performance UV optoelectronic devices with Al2O3/SiO2 films as antireflection coatings. (C) 2007 Elsevier B.V. All rights reserved.

Study on the layer structure of W/C multilayers deposited by magnetron sputtering using x-ray reflectivity

A study on the layer structure of W/C multilayers deposited by magnetron sputtering is reported. In the study, soft x-ray resonant reflectivity and hard x-ray grazing incidence reflectivity of the W/C multilayers were measured. The imperfections at the interface such as interdiffusion and formation of compounds were dealt with by two methods. On analyzing the experimental results, we found that the incorporation of an interlayer was a more suitable method than the traditional statistical method to describe the layer structure of a W/C system we fabricated. The optical constants of each layer at a wavelength of 4.48 nm were also obtained from the analysis. Copyright (C) 2008 John Wiley & Sons, Ltd.

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 GPa.

Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction

GaSb epilayers grown on GaAs(001) vicinal substrate misoriented towards (111) plane were studied using high-resolution x-ray diffraction (HRXRD). The results show that GaSb epilayers exhibit positive crystallographic tilt and the distribution of 60 degrees misfit dislocations (MDs) is imbalanced. The vicinal substrate also leads to the anisotropy of the mosaic structure, i.e. the lateral coherent lengths in [1 (1) over bar0] directions are larger than those in [110] directions. Furthermore, the full-width at half maximum (FWHM) of the off-axis peaks varies with the inclination angle, which is a result of different dislocation densities in the {111} glide planes.