412 resultados para TB3 COMPLEXES
Resumo:
Tb/Yb
Resumo:
Lallgmuir-B1odgettLBLBK11CePWllO39222H2OK11EuPW11O39225H2OK11GdPW11O39224H2OK11SmPMo11O39219H2OK11CePMo11O39223H2OK11EuPMo11O39222H2OK11GdPMo11O3922OH2OK11LaPMo11O39218H2OLBLB30-80nmK13EuSiW11O39228H2OK13EuGewl 1039225H2OKEuBWllO39222H2ONSmWlo03618H20Na9DyS10O3622H2O1:11Tb3+
Resumo:
Infrared absorption experiments have been performed on hydrogenated and deuterated bulk boron- and aluminum-doped-Si and implanted P, As, and Sb donors in silicon. A first evidence of complex formation in bulk p-type Si is obtained and the spectra confirm the anomalous 3.3-cm-1 deuterium frequency shift with respect to boron isotopes. The ratio of the D-B-11 and D-B-10 peak areas is found to be the same as that of the two boron isotopes natural abundance. In donor-implanted silicon, a quantitative analysis of the obtained data has allowed a rough estimate of the passivating rate due to diffusing deuterium. While the frequencies of the various vibrational lines are found to be in agreement with those reported in the literature, the data on the broad line at 1660 cm-1 (H) or 1220 cm-1 (D) seem to suggest an assignment of this peak to a complex in the bulk involving some type of defect due to the implantation process.
Resumo:
2010-11-23
Resumo:
Without introducing concentration quenching phenomenon, a few wt% of Tb3+ and Yb3+ ions were doped into a group of easily-fiberized tellurite glasses characterized by loose polyhedron structures and rich interstitial positions. Intense green upconversion emission from Tb3+ ions centered at 539 nm due to transition 5D4→7F5 was observed by direct excitation of Yb3+ ions with a laser diode at 976 nm. Optimizing the concentration ratio of Tb3+/Yb3+, a tellurite glass with composition of 80TeO2-10ZnO-10Na2O (mol%)+1.0wt% Tb2O3+3.0wt% Yb2O3 was found to present the highest green light intensity and therefore is especially suitable for efficient green fiber laser development.
