Combined structure of ZnO vertical well-aligned nanorods and net-like structures on AIN/sapphire

ZnO vertical well-aligned nanorods were grown on A1N/sapphire by using metal-organic chemical vapor deposition. We first observed the ZnO net-like structures under the nanorods. The different strain was determined in these two layers by using double crystal X-ray diffraction, Raman spectra, which revealed that the nanorods were relaxed and the net-like structures were strained. The optical properties of two layers were measured by using the cathodoluminescence and photo luminescence and the shift of UV peaks was observed. Moreover, the growth mechanism of the ZnO nanorods and the net-like structures is discussed. (c) 2007 Elsevier B.V. All rights reserved.

Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices

ZnO nanocrystals were synthesized by hydrolysis in methanol. X-ray diffraction and photoluminescence spectra confirm that good crystallized ZnO nanoparticles were formed. Utilizing those ZnO nanoparticles and poly [2- methoxy-5 - (3',7'-dimethyloctyloxy)- 1,4-phenylenevinylene] (MDMO-PPV), light emitting devices with indium tin oxide (ITO)/poly(3,4-oxyethyleneoxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS)/ ZnO:MDMO-PPV/Al and ITO/PEDOT:PSS/MDMO-PPV/Al structures were fabricated. Electrolummescence (EL) spectra reveal that EL yield of hybrid MDMO-PPV and ZnO nanocrystals devices increased greatly as compared with pristine MDMO-PPV devices. The current-voltage characteristics indicate that addition of ZnO nanocrystals can facilitate electrical injection and charge transport. The decreased energy barrier to electron injection is responsible for the increased efficiency of electron injection. (c) 2007 Elsevier B.V. All rights reserved.

Structural and optical properties of ZnO thin films on glass substrate grown by laser-ablating Zn target in oxygen atmosphere

C-axis-orientated ZnO thin films were prepared on glass substrates by pulsed-laser deposition (PLD) technique in an oxygen-reactive atmosphere, using a metallic Zn target. The effects of growth condition such as laser energy and substrate temperature on the structural and optical properties of ZnO films had been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission spectra and room-temperature (RT) photoluminescence (PL) measurements. The results showed that the thickness, crystallite size, and compactness of ZnO films increased with the laser energy and substrate temperature. Both the absorption edges and the UV emission peaks of the films exhibited redshift, and UV emission intensity gradually increased as the laser energy and substrate temperature increased. From these results, it was concluded that crystalline quality of ZnO films was improved with increasing laser energy and substrate temperature. (c) 2007 Elsevier B.N. All rights reserved.

Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method

We report the growth of hexagonal ZnO nanorods and nanoflowers on GaN-based LED epiwafer using a solution deposition method. We also discuss the mechanisms of epitaxial nucleation and of the growth of ZnO nanorods and nanoflowers. A GaN-based LED epiwafer was first deposited on a sapphire substrate by MOCVD with no electrode being fabricated on it. Vertically aligned ZnO nanorods with an average height of similar to 2.4 mu m were then grown on the LED epiwafer, and nanoflowers were synthesized on the nanorods. The growth orientation of the nanorods was perpendicular to the surface, and the synthesized nanoflowers were composed of nanorods. The micro-Raman spectra of the ZnO nanorods and nanoflowers are similar and both exhibit the E-2 (high) mode and the second-order multiple-phonon mode. The photoluminescence spectrum of ZnO nanostructures exhibits ultraviolet emission centred at about 380 nm and a broad and enhanced green emission centred at about 526 nm. The green emission of the ZnO nanostructures combined with the emission of InGaN quantum wells provides a valuable method to improve the colour rendering index (CRI) of LEDs.

Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering

Wurtzite ZnO/MgO superlattices were successfully grown on Si (001) substrates at 750 degrees C using radio-frequency reactive magnetron sputtering method. X-ray reflection and diffraction, electronic probe and photoluminescence analysis were used to characterize the multiple quantum wells (MQWs). The results showed the periodic layer thickness of the MQWs to be 1.85 to 22.3 nm. The blueshift induced by quantum confinement was observed. Least square fitting method was used to deduce the zero phonon energy of the exciton from the room-temperature photoluminescence. It was found that the MgO barrier layers has a much larger offset than ZnMgO. The fluctuation of periodic layer thickness of the MQWs was suggested to be a possible reason causing the photoluminescence spectrum broadening.

Electronic structure of ZnO wurtzite quantum wires

The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R >= 3 nm are studied in the framework of six-band effective-mass envelope function theory. The hole effective-mass parameters of ZnO wurtzite material are calculated by the empirical pseudopotential method. It is found that the electron states are either two-fold or four-fold degenerate. There is a dark exciton effect when the radius R of the ZnO quantum wires is in the range of [3,19.1] nm (dark range in our model). The dark ranges of other wurtzite semiconductor quantum wires are calculated for comparison. The dark range becomes smaller when the |Delta(so)| is larger, which also happens in the quantum-dot systems. The linear polarization factor of ZnO quantum wires is larger when the temperature is higher.

Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AlN/Si(111) substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional (3D) mode to the 2D one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy (TEM) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.

Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering

We have successfully prepared a high-quality 2 mu m-thick GaN film with three inserted 30 nm-thick ZnO interlayers on Si (111) substrate without cracks by magnetron sputtering. The effects of the thickness and number of ZnO interlayers on the crystal quality of the GaN films were studied. It was found that the GaN crystal quality initially improved with the increase of the thickness of ZnO interlayers, but deteriorated quickly when the thickness exceeded 30 nm. Multiple ZnO interlayers were used as an effective means to further improve the crystal quality of the GaN film. By increasing the number of interlayers up to three, the cracks can be constrained to a certain extent, and the crystal quality of the GaN film greatly improved. (c) 2006 Elsevier B.V. All rights reserved.

Structure and visible luminescence of ZnO nanoparticles

ZnO nanoparticles were synthesized in ethanolic solution using a sol-gel method. The structural and optical properties were investigated by X-ray diffraction, transmission electron microscopy, UV absorption, and photoluminescence. After annealing at 200 degrees C, the particle size is increased and the peak of defect luminescence in the visible region is changed. A yellow emission was observed in the as-prepared sample and a green emission in the annealed sample. The change of the visible emission is related to oxygen defects. Annealing in the absence of oxygen would increase oxygen vacancies. (c) 2006 Elsevier Ltd. All rights reserved.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer

High quality ZnO films have been successfully grown on a Si (100) substrate by metal organic chemical vapour deposition with a gamma-Al2O3 buffer. The crystal structure, surface morphology and optical properties of the ZnO films were characterized by x-ray diffraction, Raman spectroscopy, atomic force microscopy and photoluminescence (PL) spectroscopy. The propel-ties of the films with the Al2O3 buffer were improved in comparison with those of as-grown ZnO films. It is shown that the ZnO films with the gamma-Al2O3 buffer grown on Si (100) substrates have a highly-preferential c-axis (0002) orientation, a narrow (0002) peak, smooth surface morphology and better PL spectral properties. This demonstrates that the use of gamma-Al2O3/Si as a ZnO substrate is beneficial for reducing the residual stress for further growth of ZnO films, compared with the growth on bulk Si substrates.

Photoluminescence of ZnO : Tb nanoparticles

Terbium-doped zinc oxide nanoparticles have been prepared by hydrolyzing zinc acetate and terbium acetate. Nanoparticle-matrix-facilitated photoluminescence which is related to Tb3+ ions has been observed for ZnO:Tb nanoparticles. The dependence of emission intensity on doping concentration of Tb3+ ions has been investigated. An energy transfer from excited states of ZnO hosts to dopants is disclosed by the fact that the emission intensity of Tb3+ centers increases with increasing Tb content at the expense of emission from defect states in ZnO matrix.

Sputtering of ZnO buffer layer on Si for GaN blue light emitting materials

The preparation of high quality ZnO/Si substrates for the growth of GaN blue light emitting materials is considered. ZnO thin films have been deposited on Si(100) and Si(lll) substrates by conventional magnetron sputtering. Morphology, crystallinity and c-axis preferred orientation of ZnO thin films have been investigated by transmitting electron microscopy (TEM), X-ray diffraction (XRD) and X-ray rocking curve (XRC). It is proved that the ZnO thin films have perfect structure. The full-width-at-half-maximum (FWHM) of the ZnO(002) XRC of these films is about 1 degrees, while the minimum is 0.353 degrees. This result is better than the minimum FWHM (about 2 degrees) reported by other research groups. Moreover, comparison and discussion are given on film structure of ZnO/Si(100) and ZnO/Si(lll).

Magnetic properties of ZnO-doped cobalt ferrite

The cobalt ferrites with chemical composition Co1+xZnxFe2-2xO4 (r=0.0, 0.1, 0.2, 0.4) were obtained with conventional solid reaction. The ZnO-doped samples have lower lattice constant than CoFe2O4 by adjusting Co ions to the octahedral sites. The results show that doping ZnO could extremely improve the magnetic properties. In comparison with pure CoFe2O4, the little ZnO-doped sample has higher permeability and much lower coercivity at the condition of a little decrease of magnetization saturation. Sample with x=0.1 shows evident magnetostrictive effect at the magnetic field of 30-60 mT while pure cobalt ferrite sample does not, though the saturation magnetostriction decreases. These indicate that ZnO-doping improves the magnetostrictive sensitivity of the cobalt ferrites and have potential applications in magnetoelectric devices and magnetic detector.

Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G

High quality ZnO films have been successfully grown on Si(100) substrates by Metal-organic chemical vapor deposition (MOCVD) technique. The optimization of growth conditions (II-VI ratio, growth temperature, etc) and the effects of film thickness and thermal treatment on ZnO films' crystal quality, surface morphology and optical properties were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectrum, respectively. The XRD patterns of the films grown at the optimized temperature (300 degrees C) show only a sharp peak at about 34.4 degrees corresponding to the (0002) peak of hexagonal ZnO, and the FWHM was lower than 0.4 degrees. We find that under the optimized growth conditions, the increase of the ZnO films' thickness cannot improve their structural and optical properties. We suggest that if the film's thickness exceeds an optimum value, the crystal quality will be degraded due to the large differences of lattice constant and thermal expansion coefficient between Si and ZnO. In PL analysis, samples all displayed only ultraviolet emission peaks and no observable deep-level emission, which indicated high-quality ZnO films obtained. Thermal treatments were performed in oxygen and nitrogen atmosphere, respectively. Through the analysis of PL spectra, we found that ZnO films annealing in oxygen have the strongest intensity and the low FWHM of 10.44 nm(106 meV) which is smaller than other reported values on ZnO films grown by MOCVD.