SYNTHESES, CHARACTERIZATION AND CRYSTAL-STRUCTURES OF THE COMPLEXES OF RARE-EARTH WITH M-METHYLBENZOIC ACID

REL3(RE=Y, La approximately Lu; HL = m-methylbenzoic acid) were synthesized, and their IR spectra were studied. The crystal structures of the complexes of neodymium and terbium were determined by X-ray diffraction method. Both of them crystallize in the monoclinic space group P2(1)/n and show infinite chain structures. The coordination numbers are nine (Nd3+) and eight (Tb3+), respectively.

SYNTHESES AND CRYSTAL STRUCTURES OF THE COMPLEXES OF RARE EARTH WITH FUMARIC ACID

Six compounds of M2F3 center dot 1.2H(2)O (M=EU, Ga, Tb, Y, Er, LU: H2F=Fumaric acid) have been synthesized. The structures of Eu(III), T b(III), Y(III), Er(III) and Lu(III) compounds have been determined by singal crystal X-ray diffraction method. The complex of Eu(III) crystallizes in tri-clinic space group P (1) over bar, and the coordination number of Eu3+ is ten. The other four complexes crystallize in monclinic space P2(1)/c, and the coordination numbers of the metal ions are eight. Each of the complexes shows a three-dimensional net structures.

INVESTIGATION OF THE PHOTOELECTRONIC PROPERTIES OF RARE-EARTH MONOPHOSPHIDES

The optical, electrical and photoelectronic properties of rare earth monophosphides (LnP, Ln = La, Nd, Sm and Y) have been studied. The experimental results indicate that their resistivities are low, the electric conduction in all of them is N-type, the energy gaps of LaP, NdP, SmP and YP are 1.46eV, 1.15eV, 1.1eV and 1.0eV, respectively. The SmP/Si and YP/Si junctions exhibit the photovoltaic effect. They may be used as photoelectronic sensors.

THE PHOTOELECTRIC PROPERTIES OF THIN-FILMS OF RARE-EARTH MONOPHOSPHIDES

The optical, electrical and photoelectric properties of rare earth monophosphides (LnP, Ln = La, Nd, Sm, Y, Dy and Yb) have been studied in thin films. The films exhibit semiconducting behaviour with energy gaps of 1.0-1.46 eV and n-type electrical conduction. Their resistivities are 10(-2) OMEGA-cm with corresponding Hall mobilities of 8.5-400 cm2 V-1 s-1. The films are deposited on a p-type silicon substrate in vacuum. Voltage-current characteristic measurements show that a p-n junction has been formed between LnP and silicon. Spectral sensitivity and a photovoltaic effect have been observed in LnP-Si junctions. They may be useful photoelectric materials.

Rare earth elements in bottom sediments of major rivers around the Yellow Sea: implications for sediment provenance

Rare earth elements (REEs) of 91 fine-grained bottom sediment samples from five major rivers in Korea (the Han, Keum, and Yeongsan) and China (the Changjiang and Huanghe) were studied to investigate their potential as source indicator for Yellow Sea shelf sediments, this being the first synthetic report on REE trends for bottom sediments of these rivers. The results show distinct differences in REE contents and their upper continental crust (UCC)-normalized patterns: compared to heavy rare earth elements (HREEs), light rare earth elements (LREEs) are highly enriched in Korean river sediments, in contrast to Chinese river sediments that have a characteristic positive Eu anomaly. This phenomenon is observed also in primary source rocks within the river catchments. This suggests that source rock composition is the primary control on the REE signatures of these river sediments, due largely to variations in the levels of chlorite and monazite, which are more abundant in Korean bottom river sediments. Systematic variations in I LREE pound/I HREE pound ratios, and in (La/Yb)-(Gd/Yb)(UCC) but also (La/Lu)-(La/Y)(UCC) and (La/Y)-(Gd/Lu)(UCC) relations have the greatest discriminatory power. These findings are consistent with, but considerably expand on the limited datasets available to date for suspended sediments. Evidently, the REE fingerprints of these river sediments can serve as a useful diagnostic tool for tracing the provenance of sediments in the Yellow Sea, and for reconstructing their dispersal patterns and the circulation system of the modern shelf, as well as the paleoenvironmental record of this and adjoining marginal seas.

Partial oxidation of ethane to syngas over nickel-based catalysts modified by alkali metal oxide and rare earth metal oxide

The catalytic activity, thermal stability and carbon deposition of various modified NiO/gamma-Al2O3 and unmodified NiO/gamma-Al2O3 catalysts were investigated with a flow reactor, XRD, TG and UVRRS analysis. The activity and selectivity of the NiO/gamma-Al2O3 catalyst showed little difference from those of the modified nickel-based catalysts. However, modification with alkali metal oxide (Li, Na, K) and rare earth metal oxide (La, Ce, Y, Sm) can improve the thermal stability of the NiO/gamma-Al2O3 and enhance its ability to suppress carbon deposition during the partial oxidation of ethane (POE). The carbon deposition contains graphite-like species that were detected by UVRRS. The nickel-based catalysts modified by alkali metal oxide and rare earth metal oxide have excellent catalytic activities (C2H6 conversion of similar to 100%, CO selectivity of similar to 94%, 7x 10(4) l/(kg h), 1123 K), good thermal stability and carbon-deposition resistance.

Rare earth doped beta-diketone complexes as promising high-density optical recording materials for blue optoelectronics

Some kinds of rare earth beta-diketone complexes with blue-violet light absorption edge were synthesized using the ligands of thenoyltrifluoroacctone (HTTA), 2, 2'-dipyridyl (BIPY) and different metal ions (Gd3+, Sm3+ and La3+). Their contents, structures and optoelectronic parameters were monitored by elemental analysis, MS, IR and UV spectra. The solubility of rare earth beta-diketone complexes in 2, 2, 3, 3-tetrafluoro-1-propanol (TFP) and absorption properties of their films in the region 300-800 nm were measured. The influence on the difference of absorption maximum from rare earth beta-diketone complexes to beta-diketone ligand by different metal ions was studied. In addition, the thermal stability of rare earth beta-diketone complexes was also reported. (C) 2005 Elsevier B.V. All rights reserved.

Rare earth dibenzoylmethane complexes for potential application as high-density recordable optical recording materials

Three kinds of rare earth complexes derived from dibenzoylmethane (DBM) ligand were synthesized by reacting free ligand and different rare earth ions(La (3+), Sm3+ and Gd3+). Their contents and structures were postulated based on elemental analysis, LDI-TOF-MS, FT-IR spectra and UV-Vis spectra. Smooth films on K9 glass substrates were prepared using the spin-coating method. Their solubility in organic solvents, absorption and reflection properties of thin film and thermal stability of these complexes were evaluated. These complexes would be a promising recording material for high-density digital versatile disc-recordable (HD-DVD-R) system. (c) 2007 Elsevier B.V. All rights reserved.

Rare-earth-doped silica microchip laser fabricated by sintering nanoporous glass

We report a new method for fabricating rare-earth-doped silica glasses for laser materials obtained by sintering nanoporous silica glasses impregnated with rare-earth-doped ions. The fabricated materials have no residual pores and show good optical and mechanical properties. Good performance from a Nd3+-doped silica microchip laser operating at 1.064 mum is successfully demonstrated, suggesting that the fabricated silica glasses have potential for use as active materials for high-power solid-state lasers. (C) 2005 Optical Society of America.

Raman spectroscopic investigation of pure and ytterbium-doped rare earth silicate crystals

Raman spectroscopy was used to study the molecular structure of a series of selected rare earth (RE) silicate crystals including Y2SiO5 (YSO), LU2SiO5 (LSO), (Lu0.5Y0.5)(2)SiO5 (LYSO) and their ytterbium-doped samples. Raman spectra show resolved bands below 500 cm(-1) region assigned to the modes of SiO4 and oxygen vibrations. Multiple bands indicate the nonequivalence of the RE-O bonds and the lifting of the degeneracy of the RE ion vibration. Low intensity bands below 500 cm(-1) are an indication of impurities. The (SiO4)(4-) tetrahedra are characterized by bands near 200 cm(-1) which show a separation of the components of nu(4) and nu(2), in the 500-700 cm(-1) region which are attributed to the distorting bending vibration and in the 880-1000 cm(-1) region which are attributed to the symmetric and antisymmetric stretching vibrational modes. The majority of the bands in the 300-610 cm(-1) region of Re2SiO5 were found to arise from vibrations involving both Si and RE ions, indicating that there is considerable mixing of Si displacements with Si-O bending modes and RE-0 stretching modes. The Raman spectra of RE silicate crystals were analyzed in terms of the molecular structure of the crystals, which enabled separation of the bands attributed to distinct vibrational units. Copyright (C) 2007 John Wiley & Sons, Ltd.