INVESTIGATION OF THE PHOTOELECTRONIC PROPERTIES OF RARE-EARTH MONOPHOSPHIDES

The optical, electrical and photoelectronic properties of rare earth monophosphides (LnP, Ln = La, Nd, Sm and Y) have been studied. The experimental results indicate that their resistivities are low, the electric conduction in all of them is N-type, the energy gaps of LaP, NdP, SmP and YP are 1.46eV, 1.15eV, 1.1eV and 1.0eV, respectively. The SmP/Si and YP/Si junctions exhibit the photovoltaic effect. They may be used as photoelectronic sensors.