Trapping of neutral atoms with a radio-frequency field

Based on the dressed-atom approach, we discuss a two-dimensional (2D) radio-frequency trap for neutral atoms, in which the trap potential derives from the magnetic-dipole transition among the hyperfine Zeeman sublevels. By adjusting the detuning of the radiation from resonance, the trapping states will be changed predominantly from the bare states Of m(FgF) > 0 to other states of m(FgF) < 0, where m(F) and g(F) are the quantum numbers of Zeeman sublevels and the Lande factor, respectively. This character contrasts finely with that, of a static magnetic, trap that can only trap or guide the states of m(FgF) > 0. In comparison to the optical field, the radio-frequency trap eliminates the spontaneous emission heating of the atoms. Unlike other oscillating traps reported in the e literature, the configuration of the radio-frequency trap is suitable for realization of a miniature magnetic guide.

Surface planar ion chip for linear radio-frequency Paul traps

We propose a surface planar ion chip which forms a linear radio frequency Paul ion trap. The electrodes reside in the two planes of a chip, and the trap axis is located above the chip surface. Its electric field and potential distribution are similar to the standard linear radio frequency Paul ion trap. This ion trap geometry may be greatly meaningful for quantum information processing.

A radio frequency field guide using field induced adiabatic potential

We study the behaviour of atoms in a field with both static magnetic field and radio frequency (rf) magnetic field. We calculate the adiabatic potential of atoms numerically beyond the usually rotating wave approximation, and it is pointed that there is a great difference between using these two methods. We find the preconditions when RWA is valid. In the extreme of static field almost parallel to rf field, we reach an analytic formula. Finally, we apply this method to Rb-87 and propose a guide based on an rf field on atom chip.

Wavefront conversion by local volume holograms between cylindrical and plane waves with reconstruction at a different readout wavelength

Based on the two-dimensional coupled-wave theory, the wavefront conversion between cylindrical and plane waves by local volume holograms recorded at 632.8 nm and reconstructed at 800 nm is investigated. The proposed model can realize the 90 degrees holographic readout at a different readout wavelength. The analytical integral solutions for the amplitudes of the space harmonics of the field inside the transmission geometry are presented. The values of the off-Bragg parameter at the reconstructed process and the diffracted beam's amplitude distribution are analysed. In addition, the dependences of diffraction efficiency on the focal length of the recording cylindrical wave and on the geometrical dimensions of the grating are discussed. Furthermore, the focusing properties of this photorefractive holographic cylindrical lens are analysed.

基于法布里-珀罗干涉仪的毫米波副载波光学产生方法

在光纤无线电系统(ROF)中，提出了一种利用法布里-珀罗干涉仪来实现将一个光学脉冲转换为毫米波频率调制的光学脉冲的方法。在这种方法中，毫米波调制的频率是由法布里-珀罗干涉仪的腔长来决定的，而脉冲序列振幅衰减和能量转移效率则是由法布里-珀罗干涉仪的腔镜反射率决定的。同时，文中对输出脉冲宽度的扩展所导致的脉冲间的干涉问题也进行了详细阐述。

New doubly periodic waves of the (2+1)-dimensional double sine-Gordon equation

New exact solutions of the (2 + 1)-dimensional double sine-Gordon equation are studied by introducing the modified mapping relations between the cubic nonlinear Klein-Gordon system and double sine-Gordon equation. Two arbitrary functions are included into the Jacobi elliptic function solutions. New doubly periodic wave solutions are obtained and displayed graphically by proper selections of the arbitrary functions.

Low temperature growth of c-axis oriented AlN films on gamma-LiAlO2 by radio frequency magnetron sputtering

Aluminum nitride (AlN) films were prepared on gamma-LiAlO2 substrates by radio frequency (rf) magnetron sputtering. The influence of substrate temperature (T-s) and nitrogen (N-2) concentration on film growth was investigated. The X-ray diffraction (XRD) results reveal that highly c-axis oriented AlN films can be obtained in the temperature range from room temperature (RT) to 300 degrees C. A smoother surface and a crystalline quality decrease with increasing N-2 concentration have been observed by XRD and atomic force microscopy (AFM) for the films deposited at lower substrate temperature. On the contrary, the degradation of the surface smoothness and the higher crystalline quality can be observed for the films deposited at a higher substrate temperature with N-2-rich ambient. The growth mechanism which leads to different crystalline quality of the films is discussed. (C) 2008 Elsevier B.V. All rights reserved.

Fiber Dispersion and Nonlinearity Influences on Transmissions of AM and FM Data Modulation Signals in Radio-Over-Fiber System

Transmission properties of data amplitude modulation (AM) and frequency modulation (FM) in radio-over-fiber (RoF) system are studied numerically. The influences of fiber dispersion and nonlinearity on different microwave modulation schemes, including double side band (DSB), single side band (SSB) and optical carrier suppression (OCS), are investigated and compared. The power penalties at the base station (BS) and the eye opening penalties of the recovered data at the end users are both calculated and analyzed. Numerical simulation results reveal that the power penalty of FM can be drastically decreased due to the larger modulation depth it can achieve than that of AM. The local spectrum broadening around subcarrier microwave frequency of AM due to fiber nonlinearity can also be eliminated with FM. It is demonstrated for the first time that the eye openings of the FM recovered data can be controlled by its modulation depths and the coding formats. Negative voltage encoding format was used to further decrease the RF frequency thus increase the fluctuation period considering their inverse relationship.

Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications

Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100 nm, and the rms roughness is 20nm (AFM 5 x 5 mu m images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

Hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality mu c-Si:H films have been achieved with a high deposition rate of 7.8 angstrom/s at a high pressure. The V-oc of 560 mV and the FF of 0.70 have been achieved for a single-junction mu c-Si:H p-i-n solar cell at a deposition rate of 7.8 angstrom/s.