170 resultados para Partial feedback linearisation


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In this work, a novel light source of tandem InGaAsP/InGaAsP multiple quantum well electroabsoption modulator( EAM ) monolithically integrated with distributed feedback laser is fabricated by ultra-low-pressure ( 22 x 10(2) Pa ) selective area growth metal-organic chemical vapor diposition technique. Superior device performances have been obtained, such as low threshold current of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3dB bandwidth in EAM part is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained due to the gate operation effect of tandem EAMs.

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The growth pressure and mask width dependent thickness enhancement factors of selective-area MOCVD. grow th were investigated in this article. A, high enhancement of 5.8 was obtained at 130 mbar with the mask width of 70 mum. Mismatched InGaAsP (-0.5%) at the maskless region which could ensure the material at butt-joint region to be matched to InP was successively grown by controlling the composition and mismatch modulation in the selective-area growth. The upper optical confinement layer and the butt-coupled tapered thickness waveguide were regrown simultaneously in separated confined heterostructure 1.55 gm distributed feedback laser, which not only offered the separated optimization of the active region and the integrated spotsize converter, but also reduced the difficulty of the butt-joint selective regrowth. A narrow beam of 9degrees and 12degrees in the vertical and horizontal directions, a low threshold current of 6.5 mA was fabricated by using this technique. (C) 2003 Elsevier Science B.V. All rights reserved.

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A generalized scattering matrix formalism is constructed to elucidate the interplay of electron resonance, coherence, dephasing, inelastic scattering, and heterogeneity, which play important roles in the physics of long-range electron transfer/transport. The theory consists of an extension of the standard Buttiker phase-breaking model and an analytical expression of the electron transmission coefficient for donor-bridge-acceptor systems with arbitrary length and sequence. The theory incorporates the following features: Dephasing-assisted off-resonance enhancement, inelasticity-induced turnover, resonance enhancement and its dephasing-induced suppression, dephasing-induced smooth superexchange-hopping transition, and heterogeneity effects. (C) 2002 American Institute of Physics.

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A InGaAsP/InP self-aligned, native oxidized buried heterostructure (BH) distributed feedback (DFB) laser is proposed. It is as easy to process as the ridge waveguide DFB laser and has superior performance. The current aperture can be easily controlled without selective regrowth. The laser exhibits a low threshold of 5.0 mA with 36 dB side mode suppression ratio at the emission wavelength of 1.562 mu m. It emits in a single lobe with full width at half maximum angles of 33.6 degrees and 42.6 degrees for the lateral and vertical fields, respectively. Its beam is more circular than that of the as-grown BH laser because the lower refractive index of oxide compared to the as-grown layer and results in a larger lateral optical confinement. Its characteristic temperature (T-0) is 50 K at room temperature but increases in value at the higher temperature range. (C) 2000 American Institute of Physics. [S0003-6951(00)00812-3].

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A 1.3-mu m AlGaInAs/InP buried heterostructure (BH) stripe distributed feedback laser with a novel AlInAs/InP complex-coupled grating grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is proposed and demonstrated. A high characteristic temperature (T-0 = 90K between 20-80 degrees C) and temperature-insensitive slope efficiency (0.25 dB drop from 20 to 80 degrees C) in 1.3 mu m AlGaInAs/InP DFB lasers was obtained by introducing AI(Ga)InAs graded-index separate-confinement heterostructure (GRINSCH) layers and a strained-compensated (SC) multi-quantum well (MQW).

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High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250(mu m) DFB and 170(mu m) EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

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A monolithic integrated amplified feedback semiconductor laser is demonstrated as an optical microwave source. The optical microwave frequency is continuously tunable in the range of 19.87-26.3 GHz with extinction ratio above 6 dB, 3-dB linewidth about 3MHz.

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We demonstrate room temperature operation of photonic-crystal distributed-feedback quantum cascade lasers emitting at 4.7 mu m. A rectangular photonic crystal lattice perpendicular to the cleaved facet was defined using holographic lithography. The anticrossing of the index- and Bragg-guided dispersions of rectangular lattice forms the band-edge mode with extended mode volume and reduced group velocity. Utilizing this coupling mechanism, single mode operation with a near-diffractive-limited divergence angle of 12 degrees is obtained for 33 mu m wide devices in a temperature range of 85-300 K. The reduced threshold current densities and improved heat dissipation management contribute to the realization of devices' room temperature operation.

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A tapered distributed feedback quantum cascade laser emitting at lambda similar to 8.1 mu m is reported. Utilising a tapered waveguide structure with a surface metal grating, the device exhibited singlemode operation over the temperature range of 100 to 214 K, with sidemode suppression ratio > 20 dB and a nearly diffraction limited far-field beam divergence angle of 5.4 degrees.

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A 7.8-mu m surface emitting second-order distributed feedback quantum cascade laser (DFB QCL) structure with metallized surface grating is studied. The modal property of this structure is described by utilizing coupled-mode theory where the coupling coefficients are derived from exact Floquet-Bloch solutions of infinite periodic structure. Based on this theory, the influence of waveguide structure and grating topography as well as device length on the laser performance is numerically investigated. The optimized surface emitting second-order DFB QCL structure design exhibits a high surface outcoupling efficiency of 22% and a low threshold gain of 10 cm(-1). Using a pi phase-shift in the centre of the grating, a high-quality single-lobe far-field radiation pattern is obtained.

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A design of single-mode distributed feedback quantum cascade lasers (DFB-QCLs) with surface metal grating is described. A rigorous modal expansion theory is adopted to analyse the interaction between the waveguide mode and the surface plasmon wave for different grating parameters. A stable single-mode operation can be obtained in a wide range of grating depths and duty cycles. The single-mode operation of surface metal grating DFB-QCLs at room temperature for lambda = 8.5 mu m is demonstrated. The device shows a side-mode suppression ratio of above 20 dB. A linear tuning of wavelength with temperature indicates the stable single-mode operation without mode hopping.

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A technique is presented for ascertaining when a (finite-state) partial process specification is adequate, in the sense of being specified enough, for contexts in which it is to be used. The method relies on the automatic generation of a modal formula from the partial specification; if the remainder of the network satisfies this formula, then any process that meets the specification is guaranteed to ensure correct behavior of the overall system. Using the results, the authors develop compositional proof rules for establishing the correctness of networks of parallel processes and illustrate their use with several examples

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To consider the energy-aware scheduling problem in computer-controlled systems is necessary to improve the control performance, to use the limited computing resource sufficiently, and to reduce the energy consumption to extend the lifetime of the whole system. In this paper, the scheduling problem of multiple control tasks is discussed based on an adjustable voltage processor. A feedback fuzzy-DVS (dynamic voltage scaling) scheduling architecture is presented by applying technologies of the feedback control and the fuzzy DVS. The simulation results show that, by using the actual utilization as the feedback information to adjust the supply voltage of processor dynamically, the high CPU utilization can be implemented under the precondition of guaranteeing the control performance, whilst the low energy consumption can be achieved as well. The proposed method can be applied to the design in computer-controlled systems based on an adjustable voltage processor.

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With naphthalene as biomass tar model compound, partial oxidation reforming (with addition of O-2) and dry reforming of biomass fuel gas were investigated over nickel-based monoliths at the same conditions. The results showed that both processes had excellent performance in upgrading biomass raw fuel gas. Above 99% of naphthalene was converted into synthesis gases (H-2+CO). About 2.8 wt% of coke deposition was detected on the catalyst surface for dry reforming process at 750 degrees C during 108 h lifetime test. However, no Coke deposition was detected for partial oxidation reforming process, which indicated that addition of O-2 can effectively prohibit the coke formation. O-2 Can also increase the CH4 conversion and H-2/CO ratio of the producer gas. The average conversion of CH4 in dry and partial oxidation reforming process was 92% and 95%, respectively. The average H-2/CO ratio increased from 0.95 to 1.1 with the addition of O-2, which was suitable to be used as synthesis gas for dimethyl ether (DME) synthesis.