Effect of as interstitial diffusionon on the properties of undoped semi-insulating LECGaAs

Annealing was carried out at 950 and 1120 degreesC under various As pressure for undoped (ND) semi-insulating (SI) LECGaAs. The effects of annealing on native defects and electrical properties were investigated. Experimental results indicate that, after an annealing at 950 degreesC for 14 h under low As pressure, the Hall mobility decreases and the resistivity increases dramatically for the samples. These changes in electrical properties are due to the generation of intrinsic acceptor defects, and the generation of the intrinsic acceptor defects originates from the outdiffusion of As interstitial at high temperature. The generation of the intrinsic defects and these changes in electrical properties can be suppressed by increasing the applied As pressure during annealing. The concentration of the main donor defect E12 (AsGaVGa) can be decreased by about one order of magnitude by an evacuated annealing at 1120 degreesC for 2-8 h followed by a fast cooling. The decrease in E12 concentration can also be suppressed by increasing the As pressure during annealing.

Blocking of the polaron effect and spin-split cyclotron resonance in a two-dimensional electron gas

Cyclotron resonance (CR) of high density GaAs quantum wells exhibits well-resolved spin splitting above the LO-phonon frequency. The spin-up and spin-down CR frequencies are reversed relative to the order expected from simple band nonparabolicity. We demonstrate that this is a consequence of the blocking of the polaron interaction which is a sensitive function of the filling of the Landau levels.

Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Deep trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8 x 10(19) cm(-3), but the hole concentration was as low as 1.3x10(17) cm-3 at room temperature. The DLTS spectrum has a dominant peak D-1 with an activation energy of 0.41+/-0.05 eV, accompanied by two additional peaks with activation energies of 0.49+/-0.09 eV (D-2) and 0.59+/-0.05 eV (D-3). It was found that the dominant peak D-1 consists of five peaks, each of which has different activation energy and capture cross section. In order to investigate these deep levels further, we performed heat treatment on the same samples to observe the variations of activation energy, capture cross section, and amplitude of DLTS signals. It was found that the longer the heat treatment duration is, the lower the amplitude of DLTS peaks become. This suggests that the decrease of the DLTS signal originates from hydrogen atom outgoing from the film during the annealing process. The possible originality of multiple trap levels was discussed in terms of the Mg-N-H complex. (C) 2000 American Vacuum Society. [S0734-2101(00)01701-2].

The intrinsic temperature effect of the Raman spectra of graphite

The Raman spectra of ion-implanted highly oriented pyrolytic graphite (HOPG) are reported, in which an additional mode at 1083 cm(-1) and three doublet structures in the positions of similar to 1350, similar to 2450, and similar to 2710 cm(-1) are revealed. Noticeable frequency shifts are observed for all the Raman bands between the spectra excited with different laser powers, which are interpreted as the pure temperature effect and a downshift in the C-C stretching frequency induced by the thermal expansion. Moreover, the pure temperature effect (d omega/dT)(V) without anharmonic contribution is achieved in pristine HOPG. The results suggest that the pure temperature effect without anharmonic contribution plays an important role in the frequency shifts with temperature. (C) 1999 American Institute of Physics. [S0003-6951(99)01313-3].

Strong circular photogalvanic effect in ZnO epitaxial films

We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

THE EFFECT OF PASSIVATION OF BORON DOPANTS BY HYDROGEN IN NANO-CRYSTALLINE AND MICROCRYSTALLINE SILICON FILMS

It is well known that the value of room-temperature conductivity sigma(RT) of boron-doped silicon films is one order lower than that of phosphorus-doped silicon films, when they are deposited in an identical plasma-enhanced chemical vapour deposition system. We use surface acoustic wave and secondary-ion mass spectrometry techniques to measure the concentration of total and electrically active boron atoms. It is shown that only 0.7% of the total amount of incorporated boron is electrically active. This is evidence that hydrogen atoms can passivate substitutional B-Si bonds by forming the neutral B-H-Si complex. By irradiating the boron-doped samples with a low-energy electron beam, the neutral B-H-Si complex converts into electrically active B-Si bonds and the conductivity can be increased by about one order of magnitude, up to the same level as that of phosphorus-doped samples.

Effect of Si-Ge interdiffusion on the waveguide properties of SiGe-Si MQW photodetector

Because of Si-Ge interdiffusion in the Si-SiGe interface during the growth process, the square-wave refractive index distribution of a SiGe-Si multiple-quantum-web (MQW) will become smooth. In order to simulate the actual refractive index profile, a staircase approximation is applied. Based on this approach, the dispersion equation of the MQW waveguide is obtained by using a transfer matrix method, The effects of index changes caused by the interdiffusion on the optical field and the characteristics of the photodetector are evaluated by solving the dispersion equation, It is shown that the Si-Ge interdiffusion can result in a reduction of the effective absorption coefficient and the quantum efficiency.

Isospin effect in the nuclear reaction induced by neutron-halo nuclei

We study the average property of the isospin effect of reaction induced by halo-neutron nuclei He-8 and He-10 in the intermediate energy heavy ion collisions using the isospin-dependent quantum molecular dynamics model (IQMD). This study is based on the extended neutron density distribution for the halo-neutron nuclei, which includes the average property of the isospin effect-of reaction mechanism and loose inner structure. The extended neutron density distribution brings an important isospin. effect into the average property of reaction mechanism because the interaction potential and nucleon-nucleon(N-N) cross section in IQMD model depend sensitively on the density distribution of colliding system. In order to see clearly the average properties of reaction mechanism induced by halo-neutron nuclei we also compare the results for the neutron-halo colliding systems with those for the corresponding stable colliding systems under the same incident channel condition. We found that the extended density distribution for the neutron-halo projectile brings an important isospin effect to the reaction mechanism, which leads to the decrease of nuclear stopping R, yet induces obvious increase of the neutron-proton ratio of nucleon emissions and isospin fractionation ratio for all beam energies studied in this work, compared to the corresponding stable colliding system. In this case, nuclear stopping, the neutron-proton ratio of nucleon emissions and isospin fractionation ratio induced by halo-neutron nuclei can be used as possible probes for studying the average property of the isospin effect of reaction mechanism and extracting the information of symmetry potential and in-medium N-N cross section by the neutron-halo nuclei in heavy ion collisions.

Constrain intergalactic medium from the SZ effect map

In this paper, we try to detect the SZ effect in the 2MASS DWT clusters and less bound objects in order to constrain the warm-hot intergalactic medium distribution on large scales by cross-correlation analysis. The results of both observed WMAP and mock SZ effect map indicate that the hot gas distributes from inside as well as outside of the high density regions of galaxy clusters, which is consistent with the results of both observation and hydro simulation. Therefore, the DWT measurement of the cross-correlation would be a powerful tool to probe the missing of baryons in the universe.

Cross-correlation between WMAP and 2MASS: non-Gaussianity induced by the SZ effect

We study the non-Gaussianity induced by the Sunyaev-Zel'dovich (SZ) effect in cosmic microwave background (CMB) fluctuation maps. If a CMB map is contaminated by the SZ effect of galaxies or galaxy clusters, the CMB maps should have similar non-Gaussian features to the galaxy and cluster fields. Using the WMAP data and 2MASS galaxy catalogue, we show that the non-Gaussianity of the 2MASS galaxies is imprinted on WMAP maps. The signature of non-Gaussianity can be seen with the fourth-order cross-correlation between the wavelet variables of the WMAP maps and 2MASS clusters. The intensity of the fourth-order non-Gaussian features is found to be consistent with the contamination of the SZ effect of 2MASS galaxies. We also show that this non-Gaussianity can not be seen by the high-order autocorrelation of the WMAP. This is because the SZ signals in the autocorrelations of the WMAP data generally are weaker than the WMAP-2MASS cross-correlations by a factor f(2), which is the ratio between the powers of the SZ-effect map and the CMB fluctuations on the scale considered. Therefore, the ratio of high-order autocorrelations of CMB maps to cross-correlations of the CMB maps and galaxy field would be effective to constrain the powers of the SZ effect on various scales.

Photon production in a chemically equilibrating quark-gluon plasma at finite Baryon density: Complete leading order results

We investigate hard photon production of the near-collinear bremsstrahlung and a new process called the inelastic pair annihilation, fully including the LPM effect, in a chemically equilibrating quark-gluon plasma at finite baryon density, and find that the effect of the system evolution on the photon production and large contribution of the bremsstrahlung make the total photon yield of the two processes as a strongly increasing function of the initial quark chemical potential.

Effect of Single- and co-Dopant on TL of Sr2Mg(BO3)(2) Phosphor

Sr2Mg(BO3)(2) thermoluminescence (TL) phosphor was synthesized by a high temperature solid state reaction and the effect of Li+, Bi3+, Gd3+ or Ti4+ as a codopant on TL of Sr2Mg(BO3)(2) : Dy was investigated. The results show that Li+ as a codopant improves the emission intensity of high temperature TL peak of Sr2Mg(BO3)(2) : Dy phosphor whereas the addition of Bi3+, Gd3+ or Ti3+ leads to the decrease of TL intensity. The TL emission bands of Sr2Mg(BO3)(2) : Dy phosphors with Li+, Bi3+, Gd3+ or Ti4+ as a codopant are situated at 480, 579, 662 and 755 nm, which were attributed to the characteristic F-4(9/2)-> H-6(15/2), F-4(9/2)-> H-6(13/2), F-4(9/2)-> H-6(11/2) and F-4(9/2)-> H-6(9/2) transitions of Dy3+ ion, consistent with the emission of Sr2Mg(BO3)(2) : Dy phosphors. The kinetics parameters of 234 degrees C TL peak of Sr2Mg(BO3)(2) Dy-0.04(3+), (Li-0.04(+)) phosphor with the values of trap depth E=1.1 eV, frequency factor s=6.3 x 10(9) s(-1) were estimated by a peak shape method, which obey the second order kinetics.

Effect of Single- and co-Dopant on TL of Sr2Mg(BO3)(2) Phosphor(单掺杂与共掺杂离子对Sr_2Mg(BO_3)_2磷光体热释发光的影响)

Sr2Mg(BO3)(2) thermoluminescence (TL) phosphor was synthesized by a high temperature solid state reaction and the effect of Li+, Bi3+, Gd3+ or Ti4+ as a codopant on TL of Sr2Mg(BO3)(2) : Dy was investigated. The results show that Li+ as a codopant improves the emission intensity of high temperature TL peak of Sr2Mg(BO3)(2) : Dy phosphor whereas the addition of Bi3+, Gd3+ or Ti3+ leads to the decrease of TL intensity. The TL emission bands of Sr2Mg(BO3)(2) : Dy phosphors with Li+, Bi3+, Gd3+ or Ti4+ as a codopant are situated at 480, 579, 662 and 755 nm, which were attributed to the characteristic F-4(9/2)-> H-6(15/2), F-4(9/2)-> H-6(13/2), F-4(9/2)-> H-6(11/2) and F-4(9/2)-> H-6(9/2) transitions of Dy3+ ion, consistent with the emission of Sr2Mg(BO3)(2) : Dy phosphors. The kinetics parameters of 234 degrees C TL peak of Sr2Mg(BO3)(2) Dy-0.04(3+), (Li-0.04(+)) phosphor with the values of trap depth E=1.1 eV, frequency factor s=6.3 x 10(9) s(-1) were estimated by a peak shape method, which obey the second order kinetics.

Effect of yttrium-rich misch metal on the microstructures, mechanical properties and corrosion behavior of die cast AZ91 alloy

Die cast AZ91-xYmm (x = 0-0.8 wt.%) magnesium alloys with excellent tensile properties and corrosion resistance behavior were successfully prepared by a simple addition of yttrium-rich misch metal (Ymm) to AZ91. Influences of Ymm on the microstructure, mechanical properties and corrosion behavior of AZ91 were investigated. The results showed that addition of Ymm to die cast AZ91 alloy could re. ne the microstructure including primary alpha-Mg and eutectic beta-Mg17Al12. When the content of Ymm reached 0.8 wt.% a small quantity of Al2Y phase would form. The tensile properties were improved greatly with addition of Ymm to AZ91. The creep rate of the AZ91-Ymm alloys, tested at 150 degrees C/50MPa, was one order of magnitude lower than that of AZ91. When addition of Ymm was more than 0.3 wt.%, the salt-spray corrosion resistance of AZ91-Ymm alloys could be 30-40 times of that of AZ91. The improvement of corrosion resistance with addition of Ymm was confirmed by the results of electrochemical polarization experiments. Mechanism of the improvement of mechanical properties and corrosion behavior caused by Ymm was also discussed.

Analysis of chemical calorific effect during reactive extrusion processes for free radical polymerization

In the reactive extrusion process for polymerization, the chemical calorific effect has a great influence on the temperature. In order to quantitatively analyze the polymerization trend and optimize the processing conditions, the phenomena of the chemical calorific effect during reactive extrusion processes for free radical polymerization were analyzed. Numerical computation expressions of the heat of chemical reaction and the reactive calorific intensity were deduced, and then a numerical simulation of the reactive extrusion process for the polymerization of n-butyl methacrylate was carried out. The evolutions of the heat of chemical reaction and the reactive calorific intensity along the! axial direction of the extruder are presented, on the basis of which reactive processing conditions can be optimized.