Growth of beta barium borate (beta-BaB2O4) thin films on alpha barium borate (alpha-BaB2O4) substrates

Crystalline beta-BBO thin films have been successfully prepared on (001)-oriented Sr2+-doped alpha-BBO substrates using liquid phase epitaxy and pulsed laser deposition techniques. The films were characterized by X-ray diffraction and X-ray rocking curve (XRC). The present results manifest that the beta-BBO thin films grown on Sr2+-doped alpha-BBO substrates have larger degree of orientation f-value and smaller XRC FWHM than the ones grown on other reported substrates. Compared with other substrates, alpha-BBO has the same UV cutoff and the similar structure to beta-BBO. These results reveal that alpha-BBO single crystal may be a promising substrate proper to the growth of beta-BBO films. (c) 2005 Elsevier B.V. All rights reserved.

在Sr～2+α_BBO单晶衬底上生长β_BBO薄膜的研究

Crystalline beta-BBO thin films were successfully prepared on (001)-oriented Sr2+-doped alpha-BBO substrates by using liquid phase epitaxy, pulsed laser deposition and vapor transport equilibration techniques. The films were characterized by X-ray diffraction and X-ray rocking curve. The present results manifest that the beta-BBO thin films grown on Sr2+-doped alpha-BBO substrates have larger degree of orientation f value and smaller X-ray rocking curve FWHM than the ones grown on other reported substrates. Compared with other substrates, alpha-BBO has the similar structure, the same UV cutoff and the same chemical properties to beta-BBO. These results reveal that Sr2+-doped alpha-BBO single crystal may be a promising substrate proper to the growth of beta-BBO films.

液相外延技术发展现状

本文介绍了液相外延技术在制备硅材料、碲镉汞材料、石榴石型单晶材料、Ⅲ-Ⅴ族半导体材料和其他一些无机材料方面的应用，简述了液相外延技术近十多年来在系统改善、工艺改进和相关理论研究方面的成果，并指出了液相外延技术相对于其他外延技术的优势及其发展需要克服的困难。

Defects in LPE-grown beta-barium borate (beta-BaB2O4) thin films

Morphological defects in beta-barium borate (beta-BBO) thin films grown on Sr2+ -doped alpha-BBO substrates by liquid phase epitaxy (LPE) technique were studied by scanning electron micrograph (SEM), atomic force microscopy (AFM) and optical spectroscopy. The present results indicate that the main defects exit in beta-BBO thin films are microcracks and hollow structure. The formation of microcrack is due to the lattice mismatch and the difference of thermal expansion coefficients between substrate and film. The hollow structure might be caused during the combination of islands, which formed in the initial stage. (C) 2006 Elsevier GmbH. All rights reserved.

液相外延法制备β-BBO薄膜

采用液相外延法在掺Sr^2＋的Q—BBO（001）衬底上制备了β-BBO薄膜，研究了制备条件对薄膜质量的影响．结果表明：当生长温度为810℃时，转速为300r／min生长的外延膜具有较高的结晶质量，且随着生长时间的延长，外延膜的结晶质量有所提高．β—BBO薄膜呈C轴高度择优取向，薄膜的双晶摇摆曲线半峰宽值FWHM仅为676．6”，表明β-BBO薄膜较好的结晶质量；在不具备相位匹配的条件下，β—BBO外延膜也能够实现二次谐波输出．

Thermodynamic damage mechanism of transparent films caused by a low-power laser

A new model for analyzing the laser-induced damage process is provided. In many damage pits, the melted residue can been found. This is evidence of the phase change of materials. Therefore the phase change of materials is incorporated into the mechanical damage mechanism of films. Three sequential stages are discussed: no phase change, liquid phase change, and gas phase change. To study the damage mechanism and process, two kinds of stress have been considered: thermal stress and deformation stress. The former is caused by the temperature gradient and the latter is caused by high-pressure drive deformation. The theory described can determine the size of the damage pit. (c) 2006 Optical Society of America.

液相体系芳香卤化物催化加氢降解研究

芳香卤化物是应用非常广泛的重要化工原料，多数具有强毒性和难以生物降解特性，对人类健康和自然环境造成了严重的威胁。催化加氢是一种先进、绿色处理技术，安全无毒物排放，降解产物还可以回收利用，受到研究者广泛关注。用催化加氢技术降解芳香卤化物具有应用价值和科学意义。 本文主要以Raney Ni为催化剂，氢气为氢源，研究了液相条件下，以氯苯为模型分子的催化加氢脱氯反应。详细讨论了在有机溶剂/水混合体系中溶剂、碱和温度等因素对催化剂活性和氯苯加氢脱氯的影响；探讨了催化剂失活的主要原因以及水促进催化剂活性和稳定性的原因；完善了一种适合降解氯代有机物的体系，并将其应用到了多氯代苯和持久性有机污染物

Hydrodynamics in an expanded bed of large size ion-exchange resin, and natural product adsorption

Successful applications of expanded bed adsorption (EBA) technology have been widely reported in the literature for protein purification. Little has been reported on the recovery of natural products and active components of Chinese herbal preparations using EBA technology. In this study, the hydrodynamic behavior in an expanded bed of cation resin, 001 x 7 Styrene-DVB, was investigated. Ephedrine hydrochloride (EH) was used as a model natural product to test the dynamic binding capacity (DBC) in the expanded bed. EBA of EH directly from a feedstock containing powdered herbs has also been investigated. These particles are different from commercially available expanded bed adsorbents by virtue of their large size (20S to 1030 gm). When the adsorbent bed is expanded to approximately 1.3 to 1.5 times its settled bed height, the axial liquid-phase dispersion coefficient was found to be of the order 10(-5) m(2) s(-1), which falls into the range 1.0 x 10(-6) to 1.0 X 10(-5) m(2) s(-1) observed previously in protein purification. Because of the favorable column efficiency (low axial dispersion coefficient), the recovery yield and purification factor values of EH directly from a feedstock reached 86.5% and 18, respectively. The results suggest that EBA technology holds promise for the recovery of natural products and active components of Chinese herbal preparations.

Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers

Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga1-xMnxSb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga1-xMnxSb samples show only GaSb-like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x-ray (EDX) experiments, the compositional dependence of GaSb-like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga1-xMnxSb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb-like phonon modes are suggested by reduced-mass model. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Effect of fabrication conditions on I-V properties for ZnO varistor with high concentration additives by sol-gel technique

Polycrystalline nano-grain-boundary multi-doping ZnO-based nonlinear varistors with higher concentration additives have been fabricated by sol-gel and standard solid-state reaction method, of which the best sample has a very high threshold voltage of E-b = 3300 V/mm. The effect of sintering processes, sintering temperature and sintering time, and that of additive concentration of Bi2O3 on E-b of the samples are systematically investigated. The results show that the great merit of sol-gel method is its high threshold voltage obtained by a lower sintering temperature than the solid-state reaction method. The present work also shows that five phases including solid-state sintering, rich Bi liquid phase formation and ZnO as well as other additive dissolution, ZnO grain growth, the secondary phase sufficient formation and evolution have been experienced at different sintering temperatures. The hole type defect and nonhomogeneity of the microstructure will lead to the decrease of threshold voltage, i.e., the grain size and the homogeneity of the material will be important factors and directly affect the characteristic of the varistor. The sintering characteristic and the influence of Bi2O3 content on the threshold voltage are also discussed. (c) 2004 Elsevier B.V. All rights reserved.

Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions

Illustrated in this paper are two examples of altering planar growth into self-assembled island formation by adapting experimental conditions. Partial oxidation, undersaturated solution and high temperature change Frank-Van der Merwe (FM) growth of Al0.3Ga0.7As in liquid phase epitaxy (LPE) into isolated island deposition. Low growth speed, high temperature and in situ annealing in molecular beam epitaxy (MBE) cause the origination of InAs/GaAs quantum dots (QDs) to happen while the film is still below critical thickness in Stranski-Krastanow (SK) mode. Sample morphologies are characterized by scanning electron microscopy (SEM) or atomic force microscopy (AFM). It is suggested that such achievements are of value not only to fundamental researches but also to spheres of device applications as well. (c) 2004 Elsevier B.V. All rights reserved.

Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films

The GaSb and Ga0.62In0.38Sb nanocrystals were embedded in the SiO2 films by radio-frequency magnetron co-sputtering and were grown on GaSb and Si substrates at different temperatures. We present results on the 10K excitonic photoluminescence (PL) properties of nanocrystalline GaSb and Ga0.62In0.38Sb as a function of their size. The measurements show that the PL of the GaSb and Ga0.62In0.38Sb nanocrystallites follows the quantum confinement model very closely. By using deconvolution of PL spectra, origins of structures in PL were identified. (C) 2002 Elsevier Science B.V. All rights reserved.

The study on high efficient AlxGa1-xAs/GaAs solar cells

The investigation of AlxGa1-xAs/GaAs solar cells is carried out by means of both metalorganic chemical vapor deposition (MOCVD) and liquid-phase epitaxial (LPE) technique. The measurements of illuminated I-V characteristics, dark I-V characteristics and quantum efficiencies were performed for the GaAs solar cells made in author's laboratory. The measuring results revealed that the quality of materials in GaAs solar cell's structures is the key factor for getting high-efficient GaAs solar cells, but the effect of post-growth technology on the performances of GaAs solar cells is also very strong. The 21.95% (AM0, 2 x 2cm(2), 25 degreesC) high conversion efficiency in a typical GaAs solar cell has been achieved owing to improving the quality of materials as well as optimizing the post-growth technology of devices. (C) 2001 Elsevier Science B.V. All rights reserved.

Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications

A novel technique of manufacturing Al0.3Ga0.7As pyramids by liquid phase epitaxy (LPE) for scanning probe microscopy (SPM) sensors is reported Four meticulously designed conditions-partial oxidation, deficient solute, air quenching and germanium doping result in defect-free homogeneous nucleation and subsequent pyramid formation. Micrometer-sized frustums and pyramids are detected by scanning electron microscopy (SEM). The sharp end of the microtip has a radius of curvature smaller than 50 nm. It is believed that such accomplishments would contribute not only to crystal growth theory, but also to miniature fabrication technology.

Catalytic Dehydration of Ethanol to Ethylene on TiO2/4A Zeolite Composite Catalysts

TiO2/4A zeolite composite catalysts were prepared by coating TiO2 on 4A zeolite via liquid phase deposition. The TiO 2/4A zeolite composite catalysts wtih higher surface weak acidity and lower mediate strong acidity exhibit much better catalytic performance on ethanol dehydration to ethylene compared with 4A zeolite. It is suggested that the TiO2 promoter could improve the effective Lewis acidity of composite catalyst which consequently enhanced the catalytic performance.