Small SiGe quantum dots obtained by excimer laser annealing

In this paper, we obtain SiGe quantum dots with the diameters and density of 15-20 nm and 1.8 x 10(11) cm(-2), respectively, by 193 nm excimer laser annealing of Si0.77Ge0.23 strained films. Under the excimer laser annealing, only surface atoms diffusion happens. From the detailed statistical information about the size and shape of the quantum dots with different annealing time, it is shown that the as-grown self-assembled quantum dots, especially the {105}-faceted dots, are not stable and disappear before the appearance of the laser-induced quantum dots. Based on the calculation of surface energy and surface chemical potential, we show that the {103}-faceted as-grown self-assembled quantum dots are more heavily strained than the {105}-faceted ones, and the heavy strain in the dot can decrease the surface energy of the dot facets. The formation of the laser-induced quantum dots, which is also with heavy strain, is attributed to kinetic constraint. (c) 2008 Elsevier B.V. All rights reserved.

Recent progresses of Si-based photonics in chinese main land

Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Serniconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850 similar to 900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 10(11) cm(-2) were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with eta of 34.4% and FWHM of 27 nut were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16x16 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 4x4 SOI rearrangeable nonblocking TO switch matrix, rising and failing time is 970 and 750 ns, respectively.

Investigations on optical properties of AlGaInN epilayers grown by mocvd

Microscopic luminescence and Raman scattering study was carried on AIInGaN quaternary alloy. Based on the analyses of SEM image and cathodoluminescence spectra measured around V-defects, the correlation between V-defect formation and indium segregation was clarified. Raman scattering of thin AlInGaN epilayers was investigated by using the short wavelength excitation of 325nm laser line. The frequency shift of A(1)(LO) phonon induced by the change of Al composition in alloy was observed. The Raman scattering of LO phonons was found to be resonantly enhanced with outgoing resonance, and it is attributed to the cascade-like electron-multiphonon interaction mechanism.

The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy

The electrical activity of defects in GaAs grown on GaAs substrates doped with Si and Be by both conventional molecular beam epitaxy (MBE) and atomic hydrogen-assisted MBE (H-MBE) were characterized by deep level transient spectroscopy. The trap densities are significantly reduced in the homoepitaxial GaAs grown by H-MBE compared to that grown by MBE. The reduction of trap densities is attributed to in situ passivation of these defects by atomic H during the growth. The improvement characteristics of GaAs materials will be significance for fabrication of semiconductor devices.

Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots

We have studied the optical and structural properties of InAs/GaAs QDs covered by InxGa1-xAs (0 less than or equal to x less than or equal to 0.3) layer using transmission electron microscopy, photoluminescence (PL) spectra and atomic force microscopy. We find that the strain reduces in the growth direction of InAs islands covered by InGaAs instead of GaAs layer. Significant redshift of PL peak energy and narrowing of PL linewidth are observed for the InAs QDs covered by 3 nm thick InGaAs layer. In addition, atomic force microscopy measurements indicate that the InGaAs islands will nucleate on top of InAs quantum dots, when 3 nm In0.3Ga0.7As overgrowth layer is deposited. This result can well explain the PL intensify degradation and linewidth increment of quantum dots with a higher In-mole-fraction InGaAs layer. The energy gap change of InAs QDs covered by InGaAs may be explained in terms of reducing strain, suppressing compositional mixing and increasing island height. (C) 2000 Elsevier Science B.V. All rights reserved.

Properties of proton-implanted p-type Si: supports for the models explaining a novel p-n junction in Si

Proton-implanted and annealed p-type Si wafers were investigated by using both transmission electron microscopy and spreading resistivity probe. The novel pn junction [Li et al., Mat. Res. Sec. Symp, Proc. 396 (1996) 745], as obtained by using n-type Si subjected to the process as this work, was not observed in the p-type Si wafers in this work. A drop of superficial resistivity in the sample was found and is explained by the proposed models interpreting the novel pn junction. (C) 2000 Elsevier Science B.V. All rights reserved.

Microstructure evolution of GaN buffer layer on MgAl2O4 substrate

Microstructure of GaN buffer layer grown on (111)MgAl2O4 substrate by metalorganic vapor phase epitaxy (MOVPE) was studied by transmission electron microscopy (TEM). It has been observed that the early deposition of GaN buffer layer on the substrate at a relatively low temperature formed a continual island-sublayer (5 nm thick) with hexagonal crystallographic structure, and the subsequent GaN buffer deposition led to crystal columns which are composed of nano-crystal slices with mixed cubic and hexagonal phases. After high-temperature annealing, the crystallinity of nano-crystal slices and island-sublayer in the buffer layer have been improved. The formation of threading dislocations in the GaN him is attributed not only to the lattice mismatch of GaN/MgAl2O4 interface, but also to the stacking mismatches at the crystal column boundaries. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy

Single crystal GaN films have been grown on to an Al2O3 coated (001)Si substrate in a horizontal-type low-pressure MOVPE system. A thin Al2O3 layer is an intermediate layer for the growth of single crystal GaN on to Si although it is only an oriented polycrystal him as shown by reflection high electron diffraction. Moreover, the oxide was not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN overlayer as studied by transmission electron microscopy. Double crystal X-ray diffraction showed that the linewidth of (0002) peak of the X-ray rocking curve of the 1.3 mu m sample was 54 arcmin and the films had heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature was observed by photoluminescence spectroscopy. (C) 1998 Elsevier Science B.V. All rights reserved.

Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy

Low temperature (similar to 500 degrees C) growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy have been studied with an emphasis on surface morphology and growth kinetics. It is found that low-temperature growth(<500 degrees C) is in layer-by-layer mode and atomically-smooth surfaces have been obtained in as-grown samples with large Ge composition (>0.5). Ge composition dependence on substrate temperature, Ge cell temperature and disilane flow rate have been investigated. It is found that in low-temperature growth (less than or equal to 500 degrees C) and under large disilane flux, Ge composition increases with the increase of Ge flux and further increase of Ge flux leads to the saturation of Ge composition. Similar compositional dependence has been found at different growth temperatures. The saturated composition increases with the decrease of substrate temperature. The results can be explained if H desorption is assumed to occur from both Si and Ge monohydrides without diffusional exchange and the presence of Ge enhances H desorption on a Si site. (C) 1998 Elsevier Science B.V. All rights reserved.

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

The growth rate of GaN buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (MOVPE) in an atmospheric pressure, two-channel reactor was studied. The growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. A model of the GaN buffer layer growth process by MOVPE is proposed to interpret the experimental evidence. (C) 1998 Elsevier Science B.V. All rights reserved.

encoding-based method for pattern matching

A new algorithm for compiling pattern matching is presented. Different from the traditional traversal-based approaches, it can represent a sequence of patterns as an integer by an encoding method and translate equations into case-expressions. The algorithm is simple to implement, and efficient for a kind of patterns, i.e. simple and dense patterns. This method can be complementary to traditional approaches.

基于工作流的知识流建模与控制

知识在多个参与者之间的产生、传播与应用称为知识流.在知识密集型组织中,对业务过程的控制和对知识资产的管理具有紧密的依赖关系.工作流管理是实现业务过程控制的重要技术.当前的工作流过程元模型不支持对知识管理机制的表示.为此,提出了一个扩展的工作流过程元模型,以支持业务过程控制与知识管理的集成.在此慕?Ｓ肟刂平?辛松钊氲难芯?提出了一种知识流建模方法,通过 5 类知识流单元对知识传递与重用、人员协作与交流进行表示.针对知识流中的动态因素,研究了基于资源约束、知识需求变化和时间约束的知识流控制方法,以实现自适应的知识流控制,并给出了有关算法.为工作流技术与知识管理技术的有效结合提供了一个有益的途径.

网驰服务计算平台监测工具的设计与实现

Web服务作为面向服务计算范型的主要实现技术，能有效提高异构环境下分布式应用的开发效率，降低其开发成本。而Web服务应用系统的运行时质量保证及优化则可以通过采用监测机制实现。但是，由于Web服务具有高度的分布性、动态性，自主性等特点，Web服务应用系统的系统行为难以预期，这对Web服务应用的监测提出了很大的挑战。 论文首先分析了Web服务系统的监测需求，确定了Web服务QoS监测，流程运行时监测以及复合服务QoS评估三个方面的研究内容。在对以上问题进行深入分析的基础上，论文设计了一种基于监测事件时序图匹配的流程运行时监测方法。通过将BPEL流程转换成对应的监测事件时序图，并在运行时将监测事件与时序图进行动态匹配，解决了流程运行时监测中的监测事件展现乱序，流程执行路径难以确定等问题；通过综合考虑流程结构，流程执行历史信息和成员Web服务QoS，设计了一种复合服务QoS评估方法，能够对业务流程运行时动态服务绑定下的QoS进行评估，为业务流程的设计及运行时的服务选择提供了有力的依据。 最后论文基于网驰服务计算平台，设计和实现了服务计算平台监测工具，将前述研究成果引入其中。并通过在线旅游预订的应用案例，对监测工具进行了功能性测试。

面向虚拟装配的三维交互平台

针对当前装配领域的特点 ,提出一个面向虚拟装配的三维交互平台 (Virtual Assem bly Toolkit,VAT) .VAT中包含了新的三维交互思想 ,定义了装配领域中常用的三维交互原语 ,设计和实现了交互原语的捕获、解释和处理框架 .同时 ,VAT封装了三维图形构造、零件间的约束和碰撞检测等功能 .VAT可以大大简化虚拟装配应用的构造 ,便于应用的快速生成

纳米流体中HFC134a水合物的生成过程

提出制冷剂气体水合物在纳米流体中快速生成的设想，通过HFC134a气体水合物在纳米铜流体（由0．04％的十二烷基苯磺酸钠（SDBS）水溶液和名义直径为25nm的纳米铜粒子组成）中的生成实验验证了此设想．实验结果表明，与去离子水中HFC134a气体水合物的生成过程相比，纳米铜流体中SDBS是造成HFC134a气体水合物诱导时问明显缩短的主要原因，而纳米铜粒子对诱导时间的影响不大；纳米铜流体中SDBS的乳化作用和纳米铜粒子大比表面积大大促进了HFC134a在水中的溶解；纳米铜粒子的加入明显加强了HFC134a气体水合物生成过程中的传热传质，随着纳米铜粒子数的增加，HFC134a气体水合物生成过程明显缩短．