ICF靶场中光束口径与列阵间隔的研究

从靶场反射镜架模块的机械结构设计布局所需几何空间的角度出发，根据大口径、列阵器件的特殊要求，给出符合“神光Ⅲ”装置总体技术要求的ICF靶场光束口径与列阵间隔之间的关系，得出靶场△纵、△横应满足的公式．

Tunable focal depth of an apodized focusing optical system

The axial intensity distribution and focal depth of an apoclized focusing optical system are theoretically investigated with two kinds of incident light fields: a uniform-intensity-distribution beam and a Gaussian beam. Both a low-numerical-aperture and a high-numerical-aperture optical system are considered. Numerical results show that the depth of focus can be adjusted by changing the geometrical parameters and transmissivity of the apodizer in the focusing optical system. When a Gaussian beam is employed as the incident beam, the waist width also affects the depth of focus. The tunable range of the focal depth is very considerable. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Tunable three-dimensional intensity distribution by a pure phase-shifting apodizer

The three-dimensional distribution of light intensity that is modulated by a pure phase-shifting apodizer is studied. Results show that the Strehl ratio can be altered by the proposed apodizer and by the waist width of incident Gaussian beams. By changing geometrical parameters of the proposed apodizer, we can increase the focal depth to several times that of the original system. The proposed apodizer can also be used to realize focal splitting and local minimum of intensity, which may be advantageous for constructing an optical trap. Furthermore, the local minimum of intensity number is tunable by changing the parameters of the apodizer. (c) 2005 Optical Society of America

Tunable focal depth of an apodized focusing optical system

The axial intensity distribution and focal depth of an apoclized focusing optical system are theoretically investigated with two kinds of incident light fields: a uniform-intensity-distribution beam and a Gaussian beam. Both a low-numerical-aperture and a high-numerical-aperture optical system are considered. Numerical results show that the depth of focus can be adjusted by changing the geometrical parameters and transmissivity of the apodizer in the focusing optical system. When a Gaussian beam is employed as the incident beam, the waist width also affects the depth of focus. The tunable range of the focal depth is very considerable. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Gradient force pattern, focal shift, and focal switch in an apodized optical system

In this paper, the evolution of the gradient force pattern, focal shift, and focal switch induced by a three-portion pure phase-shifting apodizer is numerically investigated in detail. The results show that the proposed apodizer may induce tunable gradient force on the particles in the focal region, focal shift, and focal switch. By adjusting the geometrical parameters of the phase-shifting apodizer, multiple traps may occur with changeable distance between them, and the shape of the optical trap also evolves evidently. More interestingly, for certain geometrical parameters of the proposed apodizer, by changing the phase shift of inner annular portion, the considerable focal shift may occur with focal switch accompanying, which is discussed to show that this kind of apodizer may be a very promising method of transporting trapped particles. © 2005 Elsevier GmbH. All rights reserved.

Coupling efficiency of laser beam to multimode fiber

The coupling efficiency of laser beam to multimode fiber is given by geometrical optics, and the relation between the maximum coupling efficiency and the beam propagation factor M-2 is analyzed. An equivalent factor M-F(2) for the multimode fiber is introduced to characterize the fiber coupling capability. The coupling efficiency of laser beam to multimode fiber is calculated in respect of the ratio M-2/M-F(2) by the overlapping integral theory. The optimal coupling efficiency can be roughly estimated by the ratio of M-2 to M-F(2) but with a large error range. The deviation comes from the lacks of information on the detail of phase and intensity profile in the beam factor M-2. (C) 2007 Elsevier B.V. All rights reserved.

Structure and thermal stability of novel fluorophosphate glasses

A systematic investigation on glass formation in the PbF2-InF3-BaHPO4 ternary system has been carried out. These glasses have characterized by IR spectra, Raman spectra and differential thermal analysis. The results show that the structure of these glasses is mainly affected by BaHPO4 and InF3 contents. With decreasing BaHPO4 content, the glass structure gradually transforms from metaphosphate to polyphosphate. When InF3 content is low, it mainly acts as network modifier, when its content is high; it enters glass matrix and forms In(O,F)(6) groups connecting the polymerized phosphorus oxygen species. PbF2 mainly acts as network modifier in this system. Systematic variations of the glass transition temperature and the thermal stability index agree well with these results. The most stable glass with Delta T = 230 degrees C and S = 21.79 K is obtained. (c) 2004 Elsevier B.V. All rights reserved.

锥形光纤的结构与特性

Both transmission loss and coupling efficiency of tapered fibers are discussed in this paper.With the geometrical optics method,the fact is explained that transmission loss of tapered fiber is lower than that of cylindrical fiber.Simulation study finds that both tip radius of tapered fiber and cone angle of it have an effect on efficiency of tapered fibers.The effect of relative position between light source and tapered fiber on coupling efficiency of tapered fibers is also studied.

Y2O3 stabilized ZrO2 thin films deposited by electron-beam evaporation: Optical properties, structure and residual stresses

This paper describes the preparation and the characterization Of Y2O3 stabilized ZrO2 thin films produced by electric-beam evaporation method. The optical properties, microstructure, surface morphology and the residual stress of the deposited films were investigated by optical spectroscopy, X-ray diffraction (XRD), scanning probe microscope and optical interferometer. It is shown that the optical transmission spectra of all the YSZ thin films are similar with those of ZrO2 thin film, possessing high transparency in the visible and near-infrared regions. The refractive index of the samples decreases with increasing of Y2O3 content. The crystalline structure of pure ZrO2 films is a mixture of tetragonal phase and monoclinic phase, however, Y2O3 stabilized ZrO2 thin films only exhibit the cubic phase independently of how much the added Y2O3 content is. The surface morphology spectrum indicates that all thin films present a crystalline columnar texture with columnar grains perpendicular to the substrate and with a predominantly open microporosity. The residual stress of films transforms tensile from compressive with the increasing Of Y2O3 molar content, which corresponds to the evolutions of the structure and packing densities. (C) 2008 Elsevier Ltd. All rights reserved.

Dissociation of egocentric and allocentric spatial processing in prefrontal cortex

Monkeys with lesions of areas 9 and 46 performed three variants of the spatial delayed response (SDR) task. There were no impairments in allocentric spatial memory in which geometrical relationships between environmental cues were used to identify spatial location; thus, memory of a 3D environmental map is intact. In contrast, there were severe impairments in egocentric spatial memory guided by visual or tactile cues that monkeys can relate to their viewing perspective during testing. These results strongly suggest that dorsolateral prefrontal cortex selectively mediates spatial memory tasks that are solved by referencing the location of targets to the body's orientation. (C) 2003 Lippincott Williams Wilkins.

Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

The unexpected decrease in measured responsivity observed in a specific GaN Schottky barrier photodetector (PD) at high reverse bias voltage was investigated and explained. Device equivalent transforms and small signal analysis were performed to analyse the test circuit. On this basis, a model was built which explained the responsivity decrease quantitatively. After being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. It is proved that the decrease is related to the dynamic parallel resistance of the photodiode. The results indicate that with a GaN Schottky PD, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.

High-temperature AlN interlayer for crack-free AlGaN growth on GaN

This paper presents a study of the transformation of high-temperature AlN (HT-AlN) interlayer (IL) and its effect on the strain relaxation of Al0.25Ga0.75N/HT-AlN/GaN. The HT-AlN IL capped with Al0.25Ga0.75N transforms into AlGaN IL in which the Al composition increases with the HT-AlN IL thickness while the total Ga content keeps nearly constant. During the HT-AlN IL growth on GaN, the tensile stress is relieved through the formation of V trenches. The filling up of the V trenches by the subsequent Al0.25Ga0.75N growth is identified as the Ga source for the IL transformation, whose effect is very different from a direct growth of HT-AlGaN IL. The a-type dislocations generated during the advancement of V trenches and their filling up propagate into the Al0.25Ga0.75N overlayer. The a-type dislocation density increases dramatically with the IL thickness, which greatly enhances the strain relaxation of Al0.25Ga0.75N. (c) 2008 American Institute of Physics.

The application of DBF neural networks for object recognition

On the basis of DBF nets proposed by Wang Shoujue, the model and properties of DBF neural network were discussed in this paper. When applied in pattern recognition, the algorithm and implement on hardware were presented respectively. We did experiments on recognition of omnidirectionally oriented rigid objects on the same level, using direction basis function neural networks, which acts by the method of covering the high dimensional geometrical distribution of the sample set in the feature space. Many animal and vehicle models (even with rather similar shapes) were recognized omnidirectionally thousands of times. For total 8800 tests, the correct recognition rate is 98.75%, the error rate and the rejection rate are 0.5% and 1.25% respectively. (C) 2003 Elsevier Inc. All rights reserved.

Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors

The time dependence of wet oxidized AlGaAs/GaAs in a distributed Bragg reflector (DBR) structure has been studied by mean of transmission electron microscopy and Raman spectroscopy. The wet oxidized AlGaAs transforms from an initial amorphous hydroxide phase to the polycrystalline gamma-Al2O3 phase with the extension of oxidation time. The thickness of oxide layers will contract due to the different volume per Al atom in AlGaAs and in the oxides. In the samples oxidized for 10 and 20 min, there are some fissures along the AlGaAs/GaAs interfaces. In the samples oxidized longer, although no such fissures are present along the interfaces, the whole oxidized DBR delaminates from the buffer. (c) 2005 American Vacuum Society.

Study on growth mechanism of low-temperature prepared microcrystalline Si thin films

Microcrystalline silicon thin films at different growth stages were prepared by hot wire chemical vapor deposition. Atomic force microscopy has been applied to investigate the evolution of surface topography of these films. According to the fractal analysis I it was found that, the growth of Si film deposited on glass substrate is the zero-diffused stochastic deposition; while for the film on Si substrate, it is the finite diffused deposition on the initial growth stage, and transforms to the zero-diffused stochastic deposition when the film thickness reaches a certain value. The film thickness dependence of island density shows that a maximum of island density appears at the critical film thickness for both substrates. The data of Raman spectra approve that, on the glass substrate, the a-Si: H/mu c-Si:H transition is related to the critical film thickness. Different substrate materials directly affect the surface diffusion ability of radicals, resulting in the difference of growth modes on the earlier growth stage.