猪囊尾蚴铜/锌超氧化物歧化酶(Cu/ZnSOD)基因的克隆和表达

目的克隆猪囊尾蚴胞质含铜/锌的超氧化物歧化酶基因(Cu/ZnSOD),并比较其与其它寄生蠕虫相应基因结构的相似性。方法通过获取其它生物Cu/ZnSOD基因的保守区域,设计保守引物,用于扩增该寄生虫的Cu/ZnSOD基因。结果Cu/ZnSOD基因编码一15.6kDa的蛋白,该蛋白的推导序列中含有这类酶的活性和二级结构所需要的所有保守的氨基酸残基,并且与其它寄生虫的相应序列有高达70.6%的相似度。抑制剂研究试验表明所克隆的SOD属于Cu/ZnSOD,该蛋白在大肠杆菌中得以成功表达,表达产物具有SOD活性。免

Cu~(2+)对一种绿球藻生长及生理特性的影响

研究了不同浓度的Cu2+(0.01,0.1,1,10,50,100,200mg/L)对绿球藻(Chlorococcumsp.)生长、形态结构及生理特性的影响.结果表明,Cu2+对绿球藻的显微结构、生长及生理状态的影响比较显著.与对照BG11培养的绿球藻比较,0.01～1mg/LCu2+浓度下培养的绿球藻,细胞壁无明显增厚,色素没有多大变化,但蛋白核由一个变为多个;而在高浓度(10～200mg/LCu2+)下,细胞壁明显增厚为多层,色素减少,蛋白核减少并回复到1个或消失.低浓度Cu2+(0.01,0.1mg

利用微量热法研究Cd~(2+)和Cu~(2+)对嗜热四膜虫(Tetrahymena thermophila)的毒性效应

利用微量热法研究Cd2 + 和Cu2 + 对嗜热四膜虫BF5(TetrahymenathermophilaBF5)生长代谢毒性效应 ,结果表明 :①低浓度的Cd2 + (0～ 0 .4mgL-1)和Cu2 + (0～ 10mgL-1)对四膜虫的生长有促进作用 ,而高浓度的Cd2 + (0 .8～ 3.2mgL-1)和Cu2 + (2 0～ 2 0 0mgL-1)则产生抑制作用 ;②Cd2 + 和Cu2 + 的半抑制浓度IC50 分别为 2 .0 4mg/L和15 5 .5mg/L ;③联合毒性为协同作用

湖水含盐量和Cu~(2+)浓度变化对Kinneret湖浮游植物的影响

通过人为改变湖水中的Cu2 + 浓度和含盐量的方法 ,Cu2 + 浓度和含盐量变化对Kinneret湖水中浮游植物可能造成的影响进行了分析。结果表明 ,湖水Cu2 + 浓度增加会抑制Kinneret湖水中藻类等浮游植物的生长 ,这对改善湖水水质来说是非常有利的 ,但高的Cu2 + 浓度对农作物生长和人类健康是有害的。在另一方面 ,对含盐量较低的约旦河水来说 ,适当增加Cu2 + 浓度则有利于藻类的生长。Kinneret湖中浮游植物的年平均生物量随湖水含盐量的下降而有增加的趋势 ,特别是当含盐量低于 2 0

Cu~(2+)、Zn~(2+)诱导稀有鮈鲫应激蛋白质的研究

以稀有鲫为材料 ,研究了应激蛋白质作为生物学指标的敏感性。结果表明 ,在无可观察效应浓度下 ,经 5d亚慢性胁迫暴露 ,以Cu2 +为胁迫因子 ,稀有鲫被诱导出约 54KDa的应激蛋白质 ;以Zn2 +为胁迫因子 ,稀有鲫被诱导出约 94KDa ,67KDa和 40KDa的应激蛋白质。应激蛋白质有可能成为一种生物学指标运用于生态风险性早期预警。

Cu~(2+)对红豆杉培养细胞中紫杉醇形成的影响

用Ｃｕ２＋对红豆杉（Ｔａｘｕｓｃｈｉｎｅｎｓｉｓ）培养细胞中紫杉醇形成的影响进行了研究。在红豆杉细胞悬浮培养２０ｄ即指数生长期末，每１Ｌ细胞悬浮培养物中加入３０μｍｏｌＣｕＣｌ２，Ｃｕ２＋促进紫杉醇形成的作用最大。添加ＣｕＣｌ２对红豆杉细胞生长没有明显影响，但引起培养细胞中可溶性蛋白质含量、苯丙氨酸解氨酶活性及培养基ｐＨ值的变化。

InP中的H、Fe和Cu的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Codoping of magnesium with oxygen in gallium nitride nanowires

Codoping of p-type GaN nanowires with Mg and oxygen was investigated using first-principles calculations. The Mg becomes a deep acceptor in GaN nanowires with high ionization energy due to the quantum confinement. The ionization energy of Mg doped GaN nanowires containing passivated Mg-O complex decreases with increasing the diameter, and reduces to 300 meV as the diameter of the GaN nanowire is larger than 2.01 nm, which indicates that Mg-O codoping is suitable for achieving p-type GaN nanowires with larger diameters. The codoping method to reduce the ionization energy can be effectively used in other semiconductor nanostructures. (C) 2010 American Institute of Physics.

Tensile and compressive mechanical behavior of twinned silicon carbide nanowires

Molecular dynamics simulations with the Tersoff potential were used to study the response of twinned SiC nanowires under tensile and compressive strain. The critical strain of the twinned nanowires can be enhanced by twin stacking faults, and their critical strains are larger than those of perfect nanowires with the same diameters. Under axial tensile strain, the bonds of the nanowires are stretched just before failure. The failure behavior is found to depend on the twin segment thickness and the diameter of the nanowires. An atomic chain is observed for thin nanowires with small twin segment thickness under tension strain. Under axial compressive strain, the collapse of twinned SiC nanowires exhibits two different failure modes, depending on the length and diameter of the nanowires, i.e., shell buckling for short nanowires and columnar buckling for longer nanowires.

Ferromagnetic modification of GaN film by Cu+ ions implantation

The structural and magnetic properties of Cu+ ions-implanted GaN films have been reported. Eighty kilo-electron-volt Cu+ ions were implanted into n-type GaN film at room temperature with fluences ranging from 1 x 10(16) to 8 x 10(16) cm(-2) and subsequently annealed at 800 degrees C for 1 h in N-2 ambient. PIXE was employed to determine the Cu-implanted content. The magnetic property was measured by the Quantum Design MPMS SQUID magnetometer. No secondary phases or clusters were detected within the sensitivity of XRD. Raman spectrum measurement showed that the Cu ions incorporated into the crystal lattice positions of GaN through substitution of Ga atoms. Apparent ferromagnetic hysteresis loops measured at 10 K were presented. The experimental result showed that the ferromagnetic signal strongly increased with Cu-implanted fluence from 1 x 10(16) to 8 x 10(16) cm(-2).

Defects in gallium nitride nanowires: First principles calculations

Atomic configurations and formation energies of native defects in an unsaturated GaN nanowire grown along the [001] direction and with (100) lateral facets are studied using large-scale ab initio calculation. Cation and anion vacancies, antisites, and interstitials in the neutral charge state are all considered. The configurations of these defects in the core region and outermost surface region of the nanowire are different. The atomic configurations of the defects in the core region are same as those in the bulk GaN, and the formation energy is large. The defects at the surface show different atomic configurations with low formation energy. Starting from a Ga vacancy at the edge of the side plane of the nanowire, a N-N split interstitial is formed after relaxation. As a N site is replaced by a Ga atom in the suboutermost layer, the Ga atom will be expelled out of the outermost layers and leaves a vacancy at the original N site. The Ga interstitial at the outmost surface will diffuse out by interstitialcy mechanism. For all the tested cases N-N split interstitials are easily formed with low formation energy in the nanowires, indicating N-2 molecular will appear in the GaN nanowire, which agrees well with experimental findings.

The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires

Using first-principles methods, we systematically study the mechanism of defect formation and electronic structures for 3d transition-metal impurities (V, Cr, Mn, Fe, and Co) doped in silicon nanowires. We find that the formation energies of 3d transition-metal impurities with electrons or holes at the defect levels always increase as the diameters of silicon nanowires decrease, which suggests that self-purification, i.e., the difficulty of doping in silicon nanowires, should be an intrinsic effect. The calculated results show that the defect formation energies of Mn and Fe impurities are lower than those of V, Cr, and Co impurities in silicon nanowires. It indicates that Mn and Fe can easily occupy substitutional site in the interior of silicon nanowires. Moreover, they have larger localized moments, which means that they are good candidates for Si-based dilute magnetic semiconductor nanowires. The doping of Mn and Fe atom in silicon nanowires introduces a pair of energy levels with t(2) symmetry. One of which is dominated by 3d electrons of Mn or Fe, and the other by neighboring dangling bonds of Si vacancies. In addition, a set of nonbonding states localized on the transition-metal atom with e symmetry is also introduced. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000445]

Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries

Using a first-principles method, we investigate the structural and electronic properties of grain boundaries (GBs) in polycrystalline CdTe and the effects of copassivation of elements with far distinct electronegativities. Of the two types of GBs studied in this Letter, we find that the Cd core is less harmful to the carrier transport, but is difficult to passivate with impurities such as Cl and Cu, whereas the Te core creates a high defect density below the conduction band minimum, but all these levels can be removed by copassivation of Cl and Cu. Our analysis indicates that for most polycrystalline systems copassivation or multipassivation is required to passivate the GBs.

Electronic structure and optical gain of wurtzite ZnO nanowires

The electronic structure and optical gain of wurtzite ZnO nanowires are investigated in the framework of effective-mass envelope-function theory. We found that as the elliptical aspect ratio e increases to be larger than a critical value, the hole ground states may change from optically dark to optically bright. The optical gain of ZnO nanowires increases as the hole density increases. For elliptical wire with large e, the y-polarized mode gain can be several thousand cm(-1), while the x-poiarized mode gain may be 26 times smaller than the former, so they can be used as ultraviolet linearly polarized lasers. (C) 2008 American Institute of Physics.

Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations

Based on the density functional theory, we study the magnetic coupling properties of Mn-doped ZnO nanowires. For the nanowires with passivated surfaces, the antiferromagnetic state is found and the Mn atoms have a clustering tendency. When the distance between two Mn atoms is large, the system energetically favors the paramagnetic or spin-glass state. For the nanowires with unpassivated surfaces, the ferromagnetic (FM) coupling states appear between the two nearest Mn atoms, and the zinc vacancies can further stabilize the FM states between them. The electrons with enough concentration possibly mediate the FM coupling due to the negative exchange splitting of conduction band minimum induced by the s-d coupling, which could be useful in nanomaterial design for spintronics. (C) 2008 American Institute of Physics.