Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation

Enhanced near-infrared photoluminescence (PL) from sulfur-related isoelectronic luminescent centers in silicon was observed from thermally quenched sulfur-implanted silicon in which additional copper or silver ions had been coimplanted. The PL from the sulfur and copper coimplanted silicon peaked between 70 and 100 K and persisted to 260 K. This result strongly supports the original conjecture from the optical detection of magnetic resonance studies that the strong PL from sulfur-doped silicon comes from S-Cu isoelectronic complexes [Frens , Phys. Rev. B 46, 12316 (1992); Mason , ibid. 58, 7007 (1998).]. (c) 2007 American Institute of Physics.

Synthesis and photoluminescence of ZnS : Cu nanoparticles

The room-temperature photoluminescence (PL) of copper doped zinc sulfide (ZnS:Cu) nanoparticles were investigated. These ZnS:Cu nanoparticles were synthesized by a facile wet chemical method, with the copper concentration varying from 0 to 2 mol%. By Gaussian fitting, the PL spectrum of the undoped ZnS nanoparticles was deconvoluted into two blue luminescence peaks (centered at 411 nm and 455 nm, respectively), which both can be attributed to the recombination of the defect sates of ZnS. But for the doped samples, a third peak at about 500 nm was also identified. This green luminescence originates from the recombination between the shallow donor level (sulfur vacancy) and the t(2) level of Cu2+. With the increase of the CU2+ concentration, the green emission peak is systematically shifted to longer wavelength. In addition, it was found that the overall photoluminescence intensity is decreased at the Cu2+ concentration of 2%. The concentration quenching of the luminescence may be caused by the formation of CuS compound. (c) 2005 Elsevier B.V. All rights reserved.

Rashba spin-orbit coupling in InSb nanowires under transverse electric field

We investigate the Rashba spin-orbit coupling brought by transverse electric field in InSb nanowires. In small k(z) (k(z) is the wave vector along the wire direction) range, the Rashba spin-orbit splitting energy has a linear relationship with k(z), so we can define a Rashba coefficient similarly to the quantum well case. We deduce some empirical formulas of the spin-orbit splitting energy and Rashba coefficient, and compare them with the effective-mass calculating results. It is interesting to find that the Rashba spin-orbit splitting energy decreases as k(z) increases when k(z) is large due to the k(z)-quadratic term in the band energy. The Rashba coefficient increases with increasing electric field, and shows a saturating trend when the electric field is large. As the radius increases, the Rashba coefficient increases at first, then decreases. The effects of magnetic fields along different directions are discussed. The case where the magnetic field is along the wire direction or the electric field direction are similar. The spin state in an energy band changes smoothly as k(z) changes. The case where the magnetic field is perpendicular to the wire direction and the electric field direction is quite different from the above two cases, the k(z)-positive and negative parts of the energy bands are not symmetrical, and the energy bands with different spins cross at a k(z)-nonzero point, where the spin splitting energy and the effective g factor are zero.

Temperature and pressure dependences of the copper-related green emission in ZnO microrods

We have investigated the temperature and pressure dependences of the copper-related green emission, which show fine structure at low temperature, from tetrapodlike ZnO microrods. The temperature dependence of the green emission energy follows the changes in the band gap from 10-200 K, but deviates from this behavior above 200 K. The pressure dependence of the copper-related green band (25 +/- 5 meV/GPa) is similar to that of the band gap of ZnO, and is larger than that reported previously for defect-related green emission in ZnO. (c) 2006 American Institute of Physics.

Interlayer segregation in magnetic multilayers and its influence on exchange coupling

Experimental results show that the exchange coupling field (H-ex) of NiFe/FeMn for Ta/NiFe/FeMn/Ta multilayers is higher than that for spin-valve multilayers Ta/NiFe/Cu/NiFe/FeMn/Ta. X-ray photoelectron spectroscopy shows that Cu atoms segregate to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. While studying Ta/X(X=Bi,Pb,Ag,In)/NiFe/FeMn multilayers, we also find that X atoms segregate to the NiFe/FeMn interface, which results in a decrease of the H-ex. However, a small amount of Bi, Pb, etc. deposited between Cu and pinned NiFe layer for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers can increase H-ex. (C) 2003 American Institute of Physics.

Interlayer segregation of Cu atoms in Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve multilayers and its influence on magnetic properties

Experimental results show that the exchange coupling field (H-ex) of NiFe/FeMn for Ta/NiFe/FeMn/Ta multilayers is higher than that for spin-valve multilayers Ta/NiFe/Cu/NiFe/FeMn/Ta. In order to find out the reason, the composition and chemical states at the surface of Ta(12 nm)/NiFe(7 nm), Ta(12 nm)/NiFe(7 nm)/Cu(4 nm), and Ta(12 nm)/NiFe(7 nm)/Cu(3 nm)/NiFe(5 nm) were studied using x-ray photoelectron spectroscopy. The results show that no elements from lower layers float out or segregate to the surface in the first and second samples. However, Cu atoms segregate to the surface of Ta(12 nm)/NiFe(7 nm)/Cu(3 nm)/NiFe(5 nm) multilayers, i.e., Cu atoms segregate to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. We believe that the presence of Cu atoms at the interface of NiFe/FeMn is one of the important factors which causes the exchange coupling field (H-ex) of Ta/NiFe/Cu/NiFe/FeMn/Ta to be weaker than that of Ta/NiFe/FeMn/Ta. (C) 2002 American Institute of Physics.

Interlayer segregation of Cu atoms in metal multilayers

The experimental results show that the exchange coupling field H.. of NiFe/FeMn for TalNiFe/FeMn/Ta multilayers is higher than that for the spin valve multilayers Ta/NiFe/Cu/NiFe/FeMn/Ta. The composition and chemical states at the surface of Ta(12nm)/NiFe(7nm), Th(12nm)/NiFe(7nm)/Cu(4nm) and Ta(12nm)/NiFe(7nm)/Cu(3 nm)/NiFe(5 mn) were studied by using x-ray photoelectron spectroscopy. The results show that no element from the underlayers Boats out or segregates to the surface for Th(12 nm)/NiFe(7nm), Ta(12 nm)/NiFe(7nm)/Cu(4 mn). However, Cu atoms segregate to the surface of Ta(12 nm)/NiFe(7nm)/Cu(3nm)/NiFe(5nm) multilayers, i.e. to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. We believe that the presence of Cu atoms at the interface of NiFe/FeMn is one of the important factors which will cause the exchange coupling field H.. of Ta/NiFe/FeMn/Ta multilayers to be higher than that of Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers.

Fabrication of 4 x 4 tapered MMI coupler with large cross section

MMI coupler with large cross section has low coupling loss between the device and fiber. However, large chip area is required. Recently proposed N x N tapered MMI coupler shows a substantial reduction in device geometry. No such kind of devices with N > 2 has yet been realized up to now. The authors have demonstrated a 4 x 4 parabolically tapered MMI coupler with large cross section that can match the SM fiber in silicon-on-insulator (SOI) technology. The device exhibits a minimum uniformity of 0.36 dB and excess loss of 3.7 dB, It represents a key component for realization of MMI-based silicon integrated optical circuit technology.

板栗壳对水中Cu~(2+)吸附性能的研究

研究食品加工剩余物板栗壳对水中Cu2+的吸附性能,为其用于含铜废水的处理提供理论依据。【方法】研究吸附质溶液pH、Cu2+质量浓度、吸附剂用量、粒径、吸附温度和时间对板栗壳吸附Cu2+效果的影响,探讨吸剂和吸附剂循环利用次数对解吸和再生的影响;并采用穿透曲线和洗脱曲线对动态吸附进行了分析。【结果】吸附质溶液pH值为6、Cu2+起始质量浓度为20 mg/L、吸附剂粒径为0.25 mm时的吸附效果较好,该吸附为放热过程,升高温度虽然可以加快吸附进程,但却降低了吸附量和去除率。Na+和Ca2+对Cu2+的解吸置换能力较弱,0.1mol/L HCl可使96.1%的Cu2+得以解吸回收。通过Thomas模型预测,在固定床柱吸附条件下饱和吸附量为10.94mg/g。【结论】板栗壳对水中Cu2+的吸附性能较好,因而具有很好的应用前景。

PASSIVATION OF COPPER BY LITHIUM IN P-TYPE GAAS

We report the passivation of two deep copper-related acceptor levels in Cu-diffused p-type GaAs by the group-I element lithium. The deep-level-transient-spectroscopy (DLTS) signals of the well-known Cu-related levels with apparent activation energies 0.15 eV and 0.40 eV disappear in Cu-diffused samples when they are diffused with Li, but can be reactivated by annealing. Photoluminescence measurements show a corresponding disappearance and reappearance of the copper-related luminescence at 1.36 eV. Also we observe with DLT'S an energy level at E(V) + 0.32 eV in the Cu-Li-diff-used samples. The level is neither present in the Cu-diffused samples before Li diffusion nor in Cu-Li-diffused samples after annealing. As the level is not observed in starting materials or solely Li-diffused samples we suggest that it is related to a Cu-Li complex.

Cd、Cu污染胁迫对拟南芥幼苗错配修复相关基因表达的影响

土壤重金属污染问题已成为影响我国持续农业和生态环境质量的重要因素，引起了人们的广泛关注。由于传统污染诊断方法的缺点，急需建立土壤污染生态毒理学诊断方法，生物标记物技术则是其中的研究热点之一。本文采用营养液培养的方法，以模式植物拟南芥为试材，采用半定量反转录聚合酶链式反应（RT-PCR）技术，结合传统分析方法研究了Cd、Cu在不同胁迫水平下对拟南芥幼苗的形态、生理及分子水平的毒性效应，并在此基础上，比较和分析不同测试指标对Cd、Cu胁迫响应的敏感性，进而筛选对Cd、Cu胁迫响应敏感的生物标记物。主要结果如下： 1 不同浓度Cd和Cu污染胁迫下，拟南芥幼苗生长均受到不同程度的影响 幼苗初生根伸长均受到明显抑制，而地上部叶片数、地上部鲜重却没有显著的变化。重金属首先作用于植物的根系，根系的生长对胁迫响应的敏感性高于地上部。 2 幼苗地上部的可溶性蛋白含量受到不同程度干扰，而在不同浓度的Cd、 Cu处理下，叶绿素含量变化不明显，表明幼苗地上部可溶性蛋白质含量对胁迫的敏感性高于叶绿素含量的变化。 3 幼苗地上部错配修复（MMR）和增殖细胞核抗原（PCNA）基因都明显 地出现了表达诱导或表达抑制，表明MMR和PCNA基因表达的变化对Cd、Cu胁迫表现出较高的敏感性。 4 幼苗地上部的可溶性蛋白质含量及幼苗地上部MMR和PCNA基因表达 均对Cd和Cu污染胁迫具有较高的敏感性，两者均可用于指示Cd和Cu污染的敏感生物标记物。基因表达变化图谱虽然对污染胁迫响应比较敏感，是一种污染胁迫响应敏感的生物标记物，但其在生态毒理诊断中的应用还需进一步的实验对其予以证明。