PASSIVATION OF COPPER BY LITHIUM IN P-TYPE GAAS


Autoria(s): EGILSSON T; GISLASON HP; YANG BH
Data(s)

1994

Resumo

We report the passivation of two deep copper-related acceptor levels in Cu-diffused p-type GaAs by the group-I element lithium. The deep-level-transient-spectroscopy (DLTS) signals of the well-known Cu-related levels with apparent activation energies 0.15 eV and 0.40 eV disappear in Cu-diffused samples when they are diffused with Li, but can be reactivated by annealing. Photoluminescence measurements show a corresponding disappearance and reappearance of the copper-related luminescence at 1.36 eV. Also we observe with DLT'S an energy level at E(V) + 0.32 eV in the Cu-Li-diff-used samples. The level is neither present in the Cu-diffused samples before Li diffusion nor in Cu-Li-diffused samples after annealing. As the level is not observed in starting materials or solely Li-diffused samples we suggest that it is related to a Cu-Li complex.

Identificador

http://ir.semi.ac.cn/handle/172111/13983

http://www.irgrid.ac.cn/handle/1471x/101026

Idioma(s)

英语

Fonte

EGILSSON T; GISLASON HP; YANG BH.PASSIVATION OF COPPER BY LITHIUM IN P-TYPE GAAS,PHYSICAL REVIEW B,1994,50(3):1996-1998

Palavras-Chave #半导体材料 #PHOTO-LUMINESCENCE #DEUTERIUM #IMPURITY #DEFECTS #CU
Tipo

期刊论文