Microstructure and laser-induced damage threshold of ZrO2 coatings dependence on annealing temperature

ZrO2 coatings were deposited on different substrates of Yb:YAG and fused silica by electron beam evaporation. After annealed for 12 h at 673 and 1073 K, respectively, weak absorption of coatings was measured by surface thermal lensing (STL) technique, and then laser-induced damage threshold (LIDT) was determined also. The crystalline phase of ZrO2 coatings and the size of the crystal grain were investigated by X-ray diffraction. It was found that microstructure of ZrO2 coatings was dependent on both annealing temperature and substrate structure, and coatings containing monoclinic phases had higher damage threshold than others. Due to the strong absorption of Yb:YAG, damage threshold of coatings on Yb:YAG was much less than that on fused silica. (C) 2004 Elsevier B.V. All rights reserved.

退火对ZrO2薄膜微结构及激光损伤阈值的影响

利用电子束蒸发方法在Yb:YAG晶体和熔融石英衬底上沉积单层ZrO2薄膜,分别在673 K和1 073 K的温度下经过12 h退火以后,通过X射线衍射(XRD)分析了薄膜晶相,计算了薄膜的晶粒尺寸;利用表面热透镜技术获得了薄膜的吸收;测量了退火后薄膜的激光损伤阈值.实验结果表明:两种衬底上的薄膜结构受到退火温度和衬底表面结构的影响,高温退火有利于单斜相的形成,含单斜相的ZrO2薄膜具有较高的激光损伤阈值,而由于衬底的吸收,Yb:YAG晶体上薄膜的损伤阈值远小于石英衬底上薄膜的损伤阈值.

Extraction of genomic DNA using a new amino silica monolithic column

A new amino silica monolithic column was developed for DNA extraction in a miniaturized format. The monolithic column was prepared in situ by polymerization of tetraethoxysilane (TEOS) and N-(beta-aminoethyl)-gamma-aminopropylmethyldimethoxysilane (AEAPMDMS). DNA was loaded in 50 mM tris(hydroxylmethyl)aminomethane-EDTA buffer at pH 7.0 and eluted with 300 mM potassium phosphate solution at pH 10.0. Under optimal condition, a 6.0-cm monolithic column provided a capacity of 56 ng DNA with an extraction efficiency of 71 +/- 5.2% (X +/- RSD). When the amino silica monolithic column was applied to extract genomic DNA from the whole blood of crucian carp, an extraction efficiency of 52 +/- 5.6% (X +/- SD) was obtained by three extractions. Since the chaotropic-based sample loading and organic solvent wash steps were avoided in this procedure, the purified DNA was suitable for downstream processes such as PCR. This amino silica monolithic column was demonstrated to allow rapid and efficient DNA purification in microscale.

Cementing mechanism of algal crusts from desert area

34-, 17-, 4-, 1.5-year old natural algal crusts were collected from Shapotou Scientific Station of the Chinese Academy of Sciences, 40-day old field and greenhouse artificial algal crusts were in situ developed in the same sandy soil and the same place (37degrees27'N, 104degrees57'E). Their different cohesions both against wind force and pressure were measured respectively by a sandy wind-tunnel experiment and a penetrometer. On the basis of these algal crusts, the cementing mechanism was revealed from many subjects and different levels. The results showed that in the indoor artificial crusts with the weakest cohesion bunchy algal filaments were distributed in the surface of the crusts, produced few extracellular polymers (EPS), the binding capacity of the crusts just accomplished by mechanical bundle of algal filaments. For field crusts, most filaments grew toward the deeper layers of algal crusts, secreted much more EPS, and when organic matter content was more than 2.4 times of chlorophyll a, overmuch organic matter (primarily is EPS) began to gather onto the surface of the crusts and formed an organic layer in the relatively lower micro-area, and this made the crust cohesion increase 2.5 times. When the organic layer adsorbed and intercepted amounts of dusts, soil particles and sand grains scattered down from wind, it changed gradually into an inorganic layer in which inorganic matter dominated, and this made the crusts cohesion further enhanced 2-6 times. For crust-building species Microcoleus vaginatus, 88.5% of EPS were the acidic components, 78% were the acidic proteglycan of 380 kD. The uronic acid content accounted for 8% of proteglycan, and their free carboxyls were important sites of binding with metal cations from surrounding matrix.

OCCURRENCE AND DISTRIBUTION OF SILICA-SCALED CHRYSOPHYTES IN ZHEJIANG, JIANGSU, HUBEI, YUNNAN AND SHANDONG PROVINCES, CHINA

Fifty-one phytoplankton samples were collected from different ecological environments in five provinces located in the central, eastern and southwestern parts of China. 41 taxa of silica-scaled chrysophytes, 8 of them belonging to the Chrysophyceae and 33 to the Synurophyceae, have been identified by means of electron microscopy. Among them, Mallomonas parvula, M. calceolus, M. cyathellata (?), M. costata, M. crassisquama, and Synura echinulata are new to China. The silica-scaled chrysophyte flora and its geographical distribution in this region are analysed and discussed.

Dynamics of photo-enhanced magneto-crystalline anisotropy in diluted ferromagnetic GaMnAs

By chopping a pump beam in conventional time-resolved Kerr rotation (TRKR) experiments and measuring the time evolution of M-shaped "major" hysteresis loops of magnetic linear dichroism (Delta MLD = MLDpump-on MLDpump-off), the differential MLD signal in the presence and the absence of the pump beam, we studied the dynamics of photo-enhanced magneto-crystalline anisotropy, and found that its very long recovering time (much longer than 13 ns) might reflect the nature of the coherent coupling between photo-excited holes and localized spins in the d shell of manganese.

Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films

We present a study of magnetic anisotropy by using magneto-transport and direct magnetization measurements on tensile strained (Ga,Mn)As films. The magnetic easy axis of the films is in-plane at low temperatures, while the easy axis flips to out-of-plane when temperature is raised or hole concentration is increased. This easy axis reorientation is explained qualitatively in a simple physical picture by Zeners pd model. In addition, the magneto-crystalline anisotropic resistance was also investigated experimentally and theoretically based on the single magnetic domain model. The dependence of sheet resistance on the angle between the magnetic field and [1 0 0] direction was measured. It is found that the magnetization vector M in the single-domain state deviates from the external magnetic field H direction at low magnetic field, while for high magnetic field, M continuously moves following the field direction, which leads to different resistivity function behaviors.

Electroluminescence from nano-crystalline Si/SiO2 structures embedded in pn junctions

Phosphorous-doped and boron-doped amorphous Si thin films as well as amorphous SiO2/Si/SiO2 sandwiched structures were prepared in a plasma enhanced chemical vapor deposition system. Then, the p-i-n structures containing nano-crystalline Si/SiO2 sandwiched structures as the intrinsic layer were prepared in situ followed by thermal annealing. Electroluminescence spectra were measured at room temperature under forward bias, and it is found that the electroluminescence intensity is strongly influenced by the types of substrate. The turn-on voltages can be reduced to 3 V for samples prepared on heavily doped p-type Si (p(+)-Si) substrates and the corresponding electroluminescence intensity is more than two orders of magnitude stronger than that on lightly doped p-type Si (p-Si) and ITO glass substrates. The improvements of light emission can be ascribed to enhanced hole injection and the consequent recombination of electron-hole pairs in the luminescent nanocrystalline Si/SiO2 system. (C) 2008 Elsevier Ltd. All rights reserved.

Enhancement of electroluminescence in p-i-n structures with nano-crystalline Si/SiO2 multilayers

Nano-crystalline Si/SiO2 multilayers were prepared by alternately changing the ultra-thin amorphous Si film deposition and the in situ plasma oxidation process followed by the post-annealing treatments. Well-defined periodic structures can be achieved with 2.5 nm thick SiO2 sublayers. It is shown that the size of formed nano-crystalline Si is about 3 nm. Room temperature electroluminescence can be observed and the spectrum contains two luminescence bands located at 650 nm and 520 nm. In order to improve the hole injection probability, p-i-n structures containing a nanocrystalline Si/SiO2 luminescent layer were designed and fabricated on different p-type substrates. It is found that the turn-on voltage of p-i-n structures is obviously reduced and the luminescence intensity increases by 50 times. It is demonstrated that the use of a heavy-doped p-type substrate can increase the luminescence intensity more efficiently compared with the light-doped p-type substrate due to the enhanced hole injection.

Novel triplexing-filter design using silica-based direction coupler and an arrayed waveguide grating

A new triplexing filter based on a silica direction coupler and an arrayed waveguide grating is presented. Using a combination of a direction coupler and an arrayed waveguide grating, a 1310-nm channel is multiplexed and 1490- and 1550-nm channels are demultiplexed for fiber-to-the-home. The direction coupler is used to coarsely separate the 1310-nm channel from the 1490- and 1550-nm channels. Subsequently, an arrayed waveguide grating is used to demultiplex the 1490- from 1550-nm channel. The simulated spectra show the 1-dB bandwidth of 110 nm for the 1310-nm channel and 20 and 20.5 nm for the 1490- and 1550-nm channels. The insertion loss is only 0.15 dB for 1310 nm and 5 dB for 1490 and 1550 nm. The crosstalk between the 1490- and 1550-nm channels was less than -35 dB. (C) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI 10.1117/1.3065508]

Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering

The ZnO films were deposited on c-plane sapphire, Si (0 0 1) and MgAl2O4 (1 1 1) substrates in pure Ar ambient at different substrate temperatures ranging from 400 to 750 degrees C by radio frequency magnetron sputtering. X-ray diffraction, photoluminescence and Hall measurements were used to evaluate the growth temperature and the substrate effects on the properties of ZnO films. The results show that the crystalline quality of the ZnO films improves with increasing the temperature up to 600 degrees C, the crystallinity of the films is degraded as the growth temperature increasing further, and the ZnO film with the best crystalline quality is obtained on sapphire at 600 degrees C. The intensity of the photoluminescence and the electrical properties strongly depend on the crystalline quality of the ZnO films. The ZnO films with the better crystallinity have the stronger ultraviolet emission, the higher mobility and the lower residual carrier concentration. The effects of crystallinity on light emission and electrical properties, and the possible origin of the n-type conductivity of the undoped ZnO films are also discussed. (C) 2009 Elsevier B. V. All rights reserved.

Silica-based 64-channel arrayed waveguide gratings with double functions

Silica-based 64-channel arrayed waveguide gratings (AWGs) with double functions and 0.4 nm (50 GHz) channel spacing have been designed and fabricated. On the same component, Gauss and flat-top output response spectra are obtained simultaneously. The test results show that when the insertion loss ranges from 3.5 dB to 6 dB,the crosstalk is better than -34 dB, the 1 dB bandwidth is 0.12 nm, the 3 dB bandwidth is 0,218 nm, and the polarization-dependent loss (PDL) is less than 0.5 dB for Gauss response. When the insertion loss ranges,from 5.8 dB to 7.8 dB, the crosstalk is better than -30 dB, the 1 dB bandwidth is 0.24 nm, the 3 dB bandwidth is 0.33 nm, and the PDL is less than 0.2 dB for flat-top response.

Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowiires

GaN nanowires have been grown with and without In as an additional source. The effects of In surfactant on the crystal quality and photoluminescence property of GaN nanowires are reported for the first time. X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy, and photoluminescence measurements are employed to analyse the products. The results show that introducing a certain amount of In surfactant during the growth process can improve the crystal quality of the GaN nanowires, and enhance the photolurainescence of them. In addition, the as-prepared GaN nanowires have the advantage of being easy to be separated, which will benefit the subsequent nanodevice fabrication.