Microwave packaging for 10 Gb/s EML modulators - art. no. 60201O

A novel microwave packaging technique for 10Gb/s electro-absorption modulator integrated with distributed feedback laser (EML) is presented. The packaging parasitics and intrinsic parasitics are both well considered, and the packaging circuit was synthetically designed to compensate for the intrinsic parasitic of the chip. A butterfly-packaged EMI module has been successfully developed to prove that. The small-signal modulation bandwidth of the butterfly-packaged module is about 10 GHz. Optical fiber transmission experiments have shown that the module can be used for 10Gb/s optical transmission system. After transmission through 40km,. the power penalty is less than 1 dBm at a bit-error-rate of 10-12.

Recent progresses of SOI-based photonic devices - art. no. 60201R

SOI (Silicon on Insulator) based photonic devices, including stimulated emission from Si diode, RCE (Resonant Cavity Enhanced) photodiode with quantum structure, MOS (Metal Oxide Semiconductor) optical modulator with high frequency, SOI optical matrix switch and wavelength tunable filter are reviewed in the paper. The emphasis will be played on our recent results of SOI-based thermo-optic waveguide matrix switch with low insertion loss and fast response. A folding re-arrangeable non-blocking 4x4 matrix switch with total internal reflection (TIR) mirrors and a first blocking 16 x 16 matrix were fabricated on SOI wafer. The extinction ratio and the crosstalk are better. The insertion loss and the polarization dependent loss (PDL) at 1.55 mu m increase slightly with longer device length and more bend and intersecting waveguides. The insertion losses are expected to decrease 2-3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.

Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V

An extended subtraction method of scattering parameters for characterizing laser diode is introduced in this paper. The intrinsic small-signal response can be directly extracted from the measured transmission coefficients of laser diode by the method. However the chip temperature may change with the injection bias current due to thermal effects, which causes inaccurate intrinsic response by our method. Therefore, how to determine the chip temperature and keep the laser chip adiabatic is very critical when extracting the intrinsic response. To tackle these problems, the dependence of the lasing wavelength of the laser diode on the chip temperature is investigated, and an applicable measurement setup which keeps the chip temperature stable is presented. The scattering parameters of laser diode are measured on diabatic and adiabatic conditions, and the extracted intrinsic responses for both conditions are compared. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis indicates that inclusion of thermal effects is necessary to acquire accurate intrinsic response.

Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F

In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth.

Novel compact SOI-based reconfigurable optical add/drop multiplexer using microring resonators - art. no. 60190L

Novel compact design for 4-channel SOI-based reconfigurable optical add/drop multiplexer using microring resonators is presented and analyzed. Microring resonators have two important attributes as a key new technology for future optical communications, namely functionality and compactness. Functionality refers to the fact that a wide range of desirable filter characteristics can be synthesized by coupling multiple rings. Compactness refers the fact that ring resonators with radii about 30 mu m can lead to large scale integration of devices with densities on the order of 10(4) similar to 10(5) devices per square centimeter. A 4-channel reconfigurable optical add/drop multiplexer comprises a grid-like array of ridge waveguides which perpendicularly cross through each other. SOI-based resonators consisted of multiple rings at each of the cross-grid nodes serve as the wavelength selective switch, and they can switch an optical signal between two ports by means of tuning refractive index of one of the rings. The thermo-optic coefficient of silicon is 1.86x 10(-4) /K. Thus a temperature rise of 27K will increase the refractive index by 5 x 10(-3), which is enough to cause the switching of our designed microring resonators. The thermo-optic effect is used to suppress the resonator power transfer, rather than to promote loss. Thus, the input signal only suffers small attenuation and simultaneously low crosstalk can be achieved by using multiple rings.

Design and Fabrication of Low-microwave loss Coplannar Waveguide and precise V groove on Silicon Substrate for Optoelectronic Packaging - art. no. 601938

Optoelectronic packaging has become a most important factor that influences the final performance and cost of the module. In this paper, low microwave loss coplanar waveguide(CPW) on high resistivity silicon(HRS) and precise V groove in silicon substrate were successfully fabricated. The microwave attenuation of the CPW made on HRS with the simple process is lower than 2 dB/cm in the frequency range of 0 similar to 26GHz, and V groove has the accuracy in micro level and smooth surface. These two techniques built a good foundation for high frequency packaging and passive coupling of the optoelectronic devices. Based on these two techniques, a simple high resistivity silicon substrate that integrated V groove and CPW for flip-chip packaging of lasers was completed. It set a good example for more complicate optoelectronic packaging.

Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z

The nonradiative recombination effect on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. It is found that the PL decay dynamics strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual non-exponential behavior and show a convex shape. By introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. In the cw PL measurement, a rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of GaInNAs/GaAs quantum wells.

Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I

The narrow stripe selective growth of the InGaAlAs bulk waveguides and InGaAlAs MQW waveguides was first investigated. Flat and clear interfaces were obtained for the selectively grown InGaAlAs waveguides under optimized growth conditions. These selectively grown InGaAlAs waveguides were covered by specific InP layers, which can keep the waveguides from being oxidized during the fabrication of devices. PL peak wavelength shifts of 70 nm for the InGaAlAs bulk waveguides and 73 nm for the InGaAlAs MQW waveguides were obtained with a small mask stripe width varying from 0 to 40 gm, and were interpreted in considering both the migration effect from the masked region (MMR) and the lateral vapor diffusion effect (LVD). The quality of the selectively grown InGaAlAs MQW waveguides was confirmed by the PL peak intensity and the PL FWHM. Using the narrow stripe selectively grown InGaAlAs MQW waveguides, then the buried heterostructure (BH) lasers were fabricated by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good performance characteristics, with a high internal differential quantum efficiency of about 85% and an internal loss of 6.7 cm(-1).

温度引起的ZnSe/Zn_（0.84）Mn_（0.16）Se超晶格中势阱层和势垒层的反转

测量了ZnSe，Zn_(0.84)Mn_(0.16)Se合金和ZnSe/Zn_(0.84)Mn_(0.16)Se超晶格的10～300K的变温光致发光谱。发现ZnSe的带隙在10K时比Zn_(0.84)Mn_(0.16)Se合金的带隙小，而在300K时比合金的带隙大。预计ZnSe/Zn_(0.84)Mn_(0.16)Se超晶格中在130K附近会发生势阱层和势垒层的反转。在ZnSe/Zn_(0.84)Mn_(0.16)Se超晶格中观测到了这种反转但发生在80K附近。超晶格中Zn_(0.84)Mn_(0.16)Se层的应变可能是反转温度变低的原因。

84.5MeV~(12)C~(4+)离子诱发金属靶原子发射的Kβ与Kα-X射线强度比值的研究

本实验是在中国科学院兰州近代物理研究所,国家实验室的重离子加速器上完成的.实验用OR-TEC公司生产的HPGe X射线探测器测量了84.5 MeV的12C4+离子轰击Cu,Mo,Ag,Cd,In,Sn,W和Au金属靶产生的K壳层特征X射线谱,计算了Kβ与Kα-X射线强度的比值,并将结果与Scofield用Hartree-Fock-Slater模型计算出的理论值与用其它方法(如:衰变幅射,用光子,电子,质子等粒子与靶相互作用)得到的实验值进行了比较.比较结果表明用84.5 MeV的12C4+离子轰击Cu,Mo,Ag,Cd,In,Sn,W和Au金属靶产生的Kβ与K-αX射线强度比值比理论值和其它实验值要大许多.

36-segmented high magnetic field hexapole magnets for electron cyclotron resonance ion source

Two high magnetic field hexapoles for electron cyclotron resonance ion source (ECRIS) have successfully fabricated to provide sufficient radial magnetic confinement to the ECR plasma. The highest magnetic field at the inner pole tip of one of the magnets exceeds 1.5 T, with the inner diameter (i.d.)=74 mm. The other hexapole magnet provides more than 1.35 T magnetic field at the inner pole tip, and the i.d. is 84 mm. In this article, we discuss the necessity to have a good radial magnetic field confinement and the importance of a Halbach hexapole to a high performance ECRIS. The way to design a high magnetic field Halbach structure hexapole and one possible solution to the self-demagnetization problem are both discussed. Based on the above discussions, two high magnetic field hexapoles have been fabricated to be utilized on two high performance ECRISs in Lanzhou. The preliminary results obtained from the two ECR ion sources are given

Strategy for analysis and screening of bioactive compounds in traditional Chinese medicines

Traditional Chinese medicines (TCMs), due to their long time clinic test and reliable therapeutic efficacy, are attracting increased global attention served as excellent pools of bioactive compounds for the discovery of new drugs. However, hundreds or even thousands of components are usually contained in traditional Chinese medicines and only a few compounds are responsible for the pharmaceutical and/or toxic effects. The large numbers of other components in traditional Chinese medicines make the screening and analysis of the bioactive components extremely difficult. By the way, the combination effect of bioactive components on the pharmacological activity makes it very difficult to clear the therapeutic mechanism of TCMs. Therefore, some strategies have to design for screening of bioactive compounds in traditional Chinese medicines, which further leads to disclose the therapeutic mechanism of TCMs in molecular level. The review will summarize the present state of the art of screening strategy for active compounds in traditional Chinese medicines, and the chromatography methods for screening and analysis of bioactive compounds in traditional Chinese medicines will be emphasized. (C) 2004 Elsevier B.V. All rights reserved.

用改进的ART-2网络建立移动机器人环境模型的研究

本文应用自适应共振理论中ART-2神经网络进行移动机器人环境障碍模式识别。ART-2神经网络在处理单方向渐变的模式输入时具有模式漂移的特点，机器人在静态环境中运动依赖这种特点，但在动态环境中模式漂移的特点却会对机器人的安全造成威胁。为此，设计了一种改进的ART-2神经网络，使得移动机器人同时适应在静态和动态环境中安全运动。