Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD

Epitaxial growth of Zn-doped InGaAs on InP substrates has been carried out at 550degreesC by LP-MOCVD. Hole concentration as high as 6 x 10(19)cm(-3) has been achieved at the H-2 flow rate of 20 sccm through DEZn bubbler. The lattice constant of Zn-doped InGaAs was found to be dependent on the flow rate of DEZn, and the tensile strain mismatch increases with increasing H-2 flow rate of DEZn. The negative lattice mismatch of heavily Zn-dopped InGaAs may be due to, the small covalent bonding radius of zinc and the combination of butane from ethyl of DEZn,and TEGa. And the latter accelerates the pyrolysis of TEGa, which is the dominant mechanism in determining the negative mismatch of Zn-doped InGaAs. (C) 2003 Elsevier B.V. All rights reserved.

Study on the thermal stability of InN by in-situ laser reflectance system

The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was systematically investigated in situ by laser reflectance system and ex situ by morphology characterization, X-ray diffraction and X-ray photoelectron spectroscopy. It was found that InN can withstand isothermal annealing at temperature as high as 600 degrees C in NH3 ambient. While in N-2 atmosphere, it will decompose quickly to form In-droplets at least at the temperature around 500 degrees C, and the activation energy of InN decomposition was estimated to be 2.1 +/- 0.1 eV. Thermal stability of InN when annealing in NH3 ambient during temperature altering would be very sensitive to ramping rate and NH3 flow rate, and InN would sustain annealing process at small ramping rate and sufficient supply of reactive nitrogen radicals. Whereas In-droplets formation was found to be the most frequently encountered phenomenon concerning InN decomposition, annealing window for conditions free of In-droplets was worked out and possible reasons related are discussed. In addition, InN will decompose in a uniform way in the annealing window, and the decomposition rate was found to be in the range of 50 and 100 nm/h. Hall measurement shows that annealing treatment in such window will improve the electrical properties of InN. (c) 2005 Elsevier B.V. All rights reserved.

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 mu m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 mu m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated. (c) 2006 Elsevier B.V. All rights reserved.

Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

The effects of In doped low-temperature (LT) AlGaN interlayer on the properties of GaN/Si(111) by MOCVD have been investigated. Using In doping LT-interlayer can decrease the stress sufficiently for avoiding crack formation in a thick (2.0 mu m) GaN layer. Significant improvement in the crystal and optical properties of GaN layer is also achieved. In doping is observed to reduce the stress in AlGaN interlayer measured by high-resolution X-ray diffraction (HRXRD). It can provide more compressive stress to counteract tensile stress and reduce crack density in subsequent GaN layer. Moreover, as a surfactant, indium is observed to cause an enhanced PL intensity and the narrowed linewidths of PL and XRD spectra for the LT-interlayer. Additionally, the crystal quality of GaN layer is found to be dependent on the growth parameters of underneath In-doped LT-AlGaN interlayer. The optimal parameters, such as TMIn flow rate, TMAl flow rates and thickness, are achieved to obtain nearly 2.0 mu m thick crack free GaN film with advanced optical and crystal properties. (c) 2005 Elsevier B.V. All rights reserved.

Epitaxial growth of GaNAs/GaAs heterostructure materials

A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001) substrate have been carried out by using DC active Nz plasma, assisted molecular beam epitaxy. The samples of GaNAs between 3 and 200 nm thick were evaluated by double crystal X-ray diffraction (XRD) and photoluminescence (PL) measurements. PL and XRD measurements for these samples are in good agreement. Some material growth and structure parameters affecting the properties of GaNAs/GaAs heterostructure were studied; they were: (1) growth temperature of GaNAs epilayer; (2) electrical current of active N-2 plasma; (3) Nz flow rate; (4) GaNAs growth rate; (5) the thickness of GaNAs strained layer. XRD and PL measurements showed that superlattice with distinct satellite peaks up to two orders and quantum well structure with intensity at 22 meV Fourier transform infrared spectroscopy (FWHM) can be achieved in molecular beam epitaxy (MBE) system. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy

Low temperature (similar to 500 degrees C) growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy have been studied with an emphasis on surface morphology and growth kinetics. It is found that low-temperature growth(<500 degrees C) is in layer-by-layer mode and atomically-smooth surfaces have been obtained in as-grown samples with large Ge composition (>0.5). Ge composition dependence on substrate temperature, Ge cell temperature and disilane flow rate have been investigated. It is found that in low-temperature growth (less than or equal to 500 degrees C) and under large disilane flux, Ge composition increases with the increase of Ge flux and further increase of Ge flux leads to the saturation of Ge composition. Similar compositional dependence has been found at different growth temperatures. The saturated composition increases with the decrease of substrate temperature. The results can be explained if H desorption is assumed to occur from both Si and Ge monohydrides without diffusional exchange and the presence of Ge enhances H desorption on a Si site. (C) 1998 Elsevier Science B.V. All rights reserved.

In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.

The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure

An AlGaN/GaN HBT structure was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. From the high-resolution x-ray diffraction and transmission electron microscopy (TEM) measurements, it was indicated that the structure is of good quality and the AlGaN/GaN interfaces are abrupt and smooth. In order to obtain the values of Si doping and electronic concentrations in the AlGaN emitter and GaN emitter cap layers, Secondary Ion Mass Spectroscopy (SIMS) and electrochemical CV measurements were carried out. The results showed that though the flow rate of silane (SiH4) in growing the AlGaN emitter was about a quarter of that in growing GaN emitter cap and subcollector layer, the Si sputtering yield in GaN cap layer was much smaller than that in the AlGaN emitter layer. The electronic concentration in GaN was about half of that in the AlGaN emitter layer. It is proposed that the Si, Al co-doping in growing the AlGaN emitter layer greatly enhances the Si dopant efficiency in the AlGaN alloy. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism

High quality silicon nanowires (SiNWs) were grown directly from n-(111) silicon single crystal substrate by using Au film as a metallic catalyst. The diameter and length of the formed nanowires are 30-60 nm and from several micrometers to sereral tens of micrometers, respectively. The effects of Au film thickness, annealing temperature, growth time and N-2 gas flow rate on the formation of the nanowires were experimentally investigated. The results confirmed that the silicon nanowires with controlled diameter, length, shape and orientation can be obtained via reasonably choosing and optimizing various technical conditions. The formation process of the silicon nanowires is analyzed qualitatively based on solid-liquid-solid growth mechanism.

酸化油固定床酶法合成生物柴油研究

酸化油是油脂工业中以皂脚、油脚经酸化处理得到的产品。它的主要成分是游离脂肪酸及中性油，是生产脂肪酸的重要原料，但生产过程中有水解废水的产生，若将其直接排放，既污染了环境又浪费了资源。生物柴油的主要成分是脂肪酸甲酯（fatty acid methyl ester，FAME）。它具有原料丰富而且可再生、可生物降解、无毒、不含芳香烃、二氧化硫等污染物、燃烧排放低、闪点高、运输储存安全等特点。作为石化柴油的潜在替代能源，生物柴油因其独特的优越性和现实的需求越来越受到关注。利用酸化油生产生物柴油不仅可以缓解生物柴油原料不足问题，还可解决酸化油所带来的环境问题。

The convertion of acid oil to biodiesel by use of immobilized Candida lipase absorbed on textile cloth was studied in a fixed bed reactor, which can not only reduce the environmental pollution of acid oil, but also produce a substitute for petroleum diesel. The acid oil mixed with methanol was pumped into three fixed bed reactors in series, and the methanol was added with the molar flow rate same as the acid oil in each reactor. The effects of enzyme content, solvent content, water content, flow rate of reactant and temperature on the enzymatic reaction were analyzed. The result of orthogonal experiments indicates that the optimal transesterification can be performed under the following conditions： immobilized lipase content in acid oil, 20% ; hexane content in acid oil, 10% ; water content in acid oil, 10%, reaction temperature, 50 ℃ ; and flow rate of reactant, 0.08 g/rain. Under these conditions, the FAME content of 90.18% in the product is obtained. The immobilized lipase can be reused with relatively stable activity after glycerol being removed from the surface. By refining, most of the chemical and physical properties of biodiesel will meet the American and Germany biodiesel standards and exceed the Chinese standard of 0^# petroleum diesel except for carbon residue, density and kinematic viscosity.

Conversion of Soybean oil to Biodiesel Fuel with Immobilized Candida Lipase on Textile Cloth

The characteristic of biodiesel fuel production from transesterification of soybean oil is studied. The reactant solution is the mixture of soybean oil, methanol, and solvent. A new lipase immobilization method, textile cloth immobilization, was developed in this study. Immobilized Candida lipase sp. 99-125 was applied as the enzyme catalyst. The effect of flow rate of reaction liquid, solvents, reaction time, and water content on the biodiesel yield is investigated. Products analysis shows that the main components in biodiesel are methyl sterate, methyl hexadecanoate, methyl oleate, methyl linoleate, and methyl linolenate. The test results indicate that the maximum yield of biodiesel of 92% was obtained at the conditions of hexane being the solvent, water content being 20 wt%, and reaction time being 24 h.

Numerical simulations of interrupted and conventional microchannel heat sinks

We provide three-dimensional numerical simulations of conjugate heat transfer in conventional and the newly proposed interrupted microchannel heat sinks. The new microchannel heat sink consists of a set of separated zones adjoining shortened parallel microchannels and transverse microchambers. Multi-channel effect, physical property variations, and axial thermal conduction are considered. It is found that flow rate variations in different channels can be neglected, while heat received by different channels accounts for 2% deviations from the averaged value when the heat flux at the back surface of the silicon chip reaches 100 W/cm(2). The computed hydraulic and thermal boundary layers are redeveloping in each separated zone due to shortened flow length for the interrupted microchannel heat sink. The periodic thermal developing flow is responsible for the significant heat transfer enhancement. Two effects influence pressure drops across the newly proposed microchannel heat sink. The first one is the pressure recovery effect in the microchamber, while the second one is the head loss when liquid leaves the microchamber and enters the next zone. The first effect compensates or suppresses the second one, leading to similar or decreased pressure drop than that for the conventional microchannel heat sink, with the fluid Prandtl number larger than unity.

Two-dimensional numerical simulations of shock waves in micro convergent-divergent nozzles

The steady two-dimensional Navier-Stokes equations with the slip wall boundary conditions were used to simulate the supersonic flow in micro convergent-divergent nozzles. It is observed that shock waves can take place inside or outside of the micronozzles under the earth environment. For the over-expanded flows, there is a boundary layer separation point, downstream of which a wave interface separates the viscous boundary layer with back air flow and the inviscid core flow. The oblique shock wave is followed by the bow shock and shock diamond. The viscous boundary layer thickness relative to the whole nozzle width on the exit plane is increased but attains the maximum value around of 0.5 and oscillates against this value with the continuous increasing of the nozzle upstream pressures. The viscous effect either changes the normal shock waves outside of the nozzle for the inviscid flow to the oblique shock waves inside the nozzle, or transfers the expansion jet flow without shock waves for the inviscid flow to the oblique shock waves outside of the nozzle. 

山地红枣林地滴灌水分运移规律试验研究

在米脂山地微灌枣树示范基地研究了一定流量范围、不同灌水量条件下,地表滴灌水分在水平和垂直方向上的运移规律及滴灌结束后的水分再分布特征。试验结果表明:在流量稳定条件下,湿润体的水平和垂直扩散距离均与时间有显著的幂函数关系;在4.6~5.0 L/h的流量范围内,湿润体的水平和垂直扩散距离与灌水量也存在显著的幂函数关系;滴灌停止后24 h内的土壤湿润体扩散很大,湿润体平均含水量降低很快,24 h后的扩散较小,平均含水量下降较小,确定滴灌停止后24 h时的湿润体特征值可作为滴灌系统设计的依据。

Epitaxial growth on 4H-SiC by TCS as a silicon precursor

Epitaxial growth on n-type 4H-SiC 8°off-oriented substrates with a size of 10 × 10 mm~2 at different tem-peratures with various gas flow rates has been performed in a horizontal hot wall CVD reactor, using trichlorosilane (TCS) as a silicon precursor source together with ethylene as a carbon precursor source. The growth rate reached 23 μm/h and the optimal epilayer was obtained at 1600 ℃ with a TCS flow rate of 12 sccm in C/Si of 0.42, which has a good surface morphology with a low RMS of 0.64 nm in an area of 10 × 10μm~2. The homoepitaxial layer was oh-tained at 1500 ℃ with low growth rate (< 5μm/h) and the 3C-SiC epilayers were obtained at 1650 ℃ with a growth rate of 60-70μm/h. It is estimated that the structural properties of the epilayers have a relationship with the growth temperature and growth rate. Silicon droplets with different sizes are observed on the surface of the homoepitaxial layer in a low C/Si ratio of 0.32.