Seasonal variation in kinetic parameters of alkaline phosphatase activity in a shallow Chinese freshwater lake (Donghu Lake)

Seasonal variation of the kinetic parameters of total alkaline phosphatase activity (APA) was studied in a shallow Chinese freshwater lake (Donghu Lake). At the three experimental stations the values of V-max of APA were higher and the negative correlation between orthophosphate and the total APA specific activity (V-max/Chl.) was stronger during summer (from June to September) P depletion. At the same time, the values of Michaelis constant (K-m) of APA at the three stations decreased. Phytoplankton seem to compensate for their phosphorus deficiency not only by an increase in enzyme production but also by an improved ability to use low substrate concentrations. (C) 1997 Elsevier Science Ltd.

UV-sensitive P compounds: Release mechanism, seasonal fluctuation and inhibitory effects on alkaline phosphatase activity in a shallow Chinese freshwater lake (Donghu Lake)

Filtrable phosphorus compounds in a shallow Chinese freshwater lake (Donghu Lake) were fractionated by Sephadex G-25 gel-filtration chromatography. Some portions of those compounds released soluble reactive phosphorus upon irradiation with low dose ultraviolet light. Catalase and a hydroxyl radical scavenger (mannitol) markedly prevented photosensitive phosphorus release. The observed effects may be explained by the action of oxidizing reagents such as hydroxyl radicals, produced in photochemical reactions between UV irradiation and humic substances in the water. There was a strong seasonality in UV-sensitive P (UVSP) release. Michaels constants (K-m) of total alkaline phosphatase in the lake water showed a direct positive relation to UVSP. Plot of K-m against the UVSP/phosphomonoester ratio reveals a strong relationship between the two variables. These results suggest that in some situations UVSP may be a competitive inhibitor of alkaline phosphatase activity in the lake. The competitive inhibition of fractionated UVSP on alkaline phosphatase reagent (Sigma) apparently supports this hypothesis.

KINETICS OF SIZE-FRACTIONATED AND DISSOLVED ALKALINE-PHOSPHATASE IN A FARM POND

Nutrient addition bioassays were conducted in 10 L carboys with water from a eutrophic farm pond. The four bioassay treatments each conducted in triplicate were control (no nutrients added), +N (160 mu mol L(-1) NH4Cl), +P (10 mu mol L(-1) KH2PO4), and N+P (160 mu mol L(-1) NH4Cl and 10 mu mol L(-1) KH2PO4). The size fractionated (0.2-0.8, 0.8-3, > 3 mu m) contents of the carboys were analyzed after 7 d for alkaline phosphatase activity (APA) and chlorophyll-a content. Chlorophyll data suggested P deficiency in ammonium and control mesocosms and no P deficiency with phosphate additions. Pond water also was collected in June, August, October, and March for measurement of APA. In water from the pond, the greatest V-max of APA usually was associated with microorganisms in the size classes between 0.8-3 mu m. In mesocosm experiments, the N+P treatment increased V-max of dissolved and particulate associated APA in the 0.2-0.8 mu m size range and in dissolved form. The V-max of APA in the largest size-fraction (> 3 mu m) increased markedly with P deficiency (+N treatment) and decreased in the P-enrichment treatment. The patterns of APA and chlorophyll associated with different size fractions often varied independently among different treatments and seasons and not always as a function of P deficiency, indicating the difficulty of attempting to normalize APA to phytoplankton biomass or chlorophyll. The Michaelis half saturation constant of APA in the pond water showed no strong trends with varied seasons or size fraction.

STUDIES ON THE PURIFICATION AND RECLAMATION OF WASTE-WATER FROM A MEDIUM-SIZED CITY BY AN INTEGRATED BIOLOGICAL POND SYSTEM

The feasibility of an inexpensive wastewater treatment system is evaluated in this study. An integrated biological pond system was operated for more than 3 years to purify the wastewater from a medium-sized city, Central China. The experiment was conducted in 3 phases with different treatment combinations for testing their purification efficiencies. The pond system was divided into 3 functional regions: influent purification, effluent upgrading and multi-utilization. These regions were further divided into several zones and subzones. Various kinds of aquatic organisms, including macrophytes, algae, microorganisms and zooplankton, were effectively cooperating in the wastewater treatment in this system. The system attained high reductions of BOD5, COD, TSS, TN, TP and other pollutants. The purification efficiencies of this system were higher than those of most traditional oxidation ponds or ordinary macrophyte ponds. The mutagenic effect and numbers of bacteria and viruses declined significantly during the process of purification. After the wastewater flowed through the upgrading zone, the concentrations of pollutants and algae evidently decreased. Plant harvesting did not yield dramatic effects on reductions of the main pollutants, though it did significantly affect the biomass productivity of the macrophytes. The effluent from this system could be utilized in irrigation and aquaculture. Some aquatic products were harvested from this system and some biomass was utilized for food, fertilizer, fodder and some other uses. The wastewater was reclaimed for various purposes.

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.

Polarization insensitive gain medium with hybrid strained quantum well

A polarization insensitive gain medium for optical amplifiers has been fabricated. The active layer is a structure with alternate tensile and compressive strain quantum wells. The waveguide is made into a taper with angled facets. In the experiment we found that the structure can suppress the lasing and decrease the polarization sensitivity. The gain imbalance between transverse electric and transverse magnetic gains is small, and 0.1 dB is obtained at a driving current of 100 mA. The full-width at half-maximum of amplified spontaneous emission is 40 nm within large current. (C) 2002 Elsevier Science Ltd. All rights reserved.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Uniform mems chip temperatures in the nucleate boiling heat transfer region by selecting suitable, medium boiling number range

The not only lower but also uniform MEMS chip temperatures can he reached by selecting suitable boiling number range that ensures the nucleate boiling heat transfer. In this article, boiling heat transfer experiments in 10 silicon triangular microchannels with the hydraulic diameter of 55.4 mu m were performed using acetone as the working fluid, having the inlet liquid temperatures of 24-40 degrees C, mass fluxes of 96-360 kg/m(2)s, heat fluxes of 140-420 kW/m(2), and exit vapor mass qualities of 0.28-0.70. The above data range correspond to the boiling number from 1.574 x 10(-3) to 3.219 x 10(-3) and ensure the perfect nucleate boiling heat transfer region, providing a very uniform chip temperature distribution in both streamline and transverse directions. The boiling heat transfer coefficients determined by the infrared radiator image system were found to he dependent on the heat Axes only, not dependent on the mass Axes and the vapor mass qualities covering the above data range. The high-speed flow visualization shows that the periodic flow patterns take place inside the microchannel in the time scale of milliseconds, consisting of liquid refilling stage, bubble nucleation, growth and coalescence stage, and transient liquid film evaporation stage in a full cycle. The paired or triplet bubble nucleation sites can occur in the microchannel corners anywhere along the flow direction, accounting for the nucleate boiling heat transfer mode. The periodic boiling process is similar to a series of bubble nucleation, growth, and departure followed by the liquid refilling in a single cavity for the pool boiling situation. The chip temperature difference across the whole two-phase area is found to he small in a couple of degrees, providing a better thermal management scheme for the high heat flux electronic components. Chen's [11 widely accepted correlation for macrochannels and Bao et al.'s [21 correlation obtained in a copper capillary tube with the inside diameter of 1.95 mm using R11 and HCFC123 as working fluids can predict the present experimental data with accepted accuracy. Other correlations fail to predict the correct heat transfer coefficient trends. New heat transfer correlations are also recommended.

ALKALINE POLISHING OF INP USING DOUBLE-POURING TECHNIQUE

于2010-11-17批量导入

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.