Molecular identification and expression analysis of natural resistance associated macrophage protein (Nramp) cDNA from Japanese flounder (Paralichthys olivaceus)

Natural resistance associated macrophage protein (Nramp) controls partially innate resistance to intracellular parasites. Its function is to enhance the ability of macrophages to kill pathogens. However, little is known about the structure and function of Nramp in lower vertebrates such as teleosts. We have recently isolated a cDNA encoding Nramp from Japanese flounder (Paratichthys olivaceus). The full-length cDNA of the Nramp is 3066 bp in length, including 224 bp 5' terminal UTR, 1662 bp encoding region and 1180 bp 3' terminal UTR. The 1662-nt open reading frame was found to code for a protein with 554 amino acid residues. Comparison of amino acid sequence indicated that Japanese flounder Nramp consists of 12 transmembrane (TM) domains. A consensus transport motif (CTM) containing 20 residues was observed between transmembrane domains 8 and 9. The deduced amino acid sequence of Japanese flounder had 77.30%, 82.71%, 82.67%, 79.64%, 80.72%, 90.97%, 91.16%, 60.14%, 71.48%, 61.69%, 72.37% identity with that of rainbow trout Nramp alpha and beta, channel catfish Nramp, fathead minnow Nramp, common carp Nramp, striped sea bass Nramp, red sea bream Nramp, mouse Nramp 1 and 2, human Nramp 1 and 2, respectively. RT-PCR indicated that Nramp transcripts were highly abundant in spleen, head kidney, abundant in intestine, liver and gill, and less abundant in heart. The level of Nramp mRNA in embryos gradually increases during embryogenesis from 4 h (8 cell stage) to 80 h (hatched stage) after fertilization. (c) 2005 Elsevier Ltd. All rights reserved.

Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the ZnO/SrTiO3 heterojunction. It is found that a type-II band alignment forms at the interface. The VBO and conduction band offset (CBO) are determined to be 0.62 +/- 0.23 and 0.79 +/- 0.23 eV, respectively. The directly obtained VBO value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. Furthermore, the CBO value is also consistent with the electrical transport investigations.

Possible origin of ferromagnetism in undoped anatase TiO2

Using first-principles electronic structure calculations we find that the titanium vacancy and divacancy may be responsible for the unexpected ferromagnetism in undoped anatase TiO2. An isolated titanium vacancy produces a magnetic moment of 3.5 mu(B), and an isolated titanium divacancy produces a magnetic moment of 2.0 mu(B). The origin of the collective magnetic moments is the holes introduced by the titanium vacancy or divacancy in the narrow nonbonding oxygen 2p(pi) band. At the center of the divacancy, an O-2 dimer forms during the relaxation, which lowers the total energy of the system and leads to the decrease in the total magnetic moment due to a hole compensation mechanism. For both the two native defects, the ferromagnetic state is more stable than the antiferromagnetic state.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses. (C) 2001 American Institute of Physics.

Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate

Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In-0.9(Ga/Al)(0.1)As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate. (C) 2000 American Institute of Physics. [S0021-8979(00)10213-0].

Effects of 9-cyanoanthracene and anthracene adsorption on the photoluminescence of porous silicon

The photoluminescence of porous silicon can be modified sensitively by surface adsorption of different kinds of molecules. A quite different effects of 9-cyanoanthracene and anthracene adsorption on the photoluminescence of porous silicon were observed. The adsorption of 9-cyanoanthracene induced the photoluminescence enhancement, while anthracene adsorption resulted in photoluminescent quenching. An explanation of the interaction of adsorbates with surface defect sites of porous silicon was suggested and discussed. (C) 1998 Elsevier Science S.A.

Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer

We report highly efficient and stable organic light-emitting diodes (OLEDs) with MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) as hole injection layer (HIL). A green OLED with structure of ITO/20 wt% MoO3: PTCDA/NPB/Alq(3)/LiF/Al shows a long lifetime of 1012 h at the initial luminance of 2000 cd/m(2), which is 1.3 times more stable than that of the device with MoO3 as HIL. The current efficiency of 4.7 cd/A and power efficiency of 3.7 lm/W at about 100 cd/m(2) have been obtained. The charge transfer complex between PTCDA and MoO3 plays a decisive role in improving the performance of OLEDs.

针对瞬时故障的控制流容错技术研究

随着微电子器件复杂度的提高，空间辐射对于计算机程序的正确性影响正越来越明显。一般情况下，这些影响并不是永久的，而是瞬时故障。无论是太空中的信息处理系统、嵌入式实时控制系统，还是计算机集群、高性能超级计算机都可能由于错误的输出而导致灾难性的后果。 传统的可靠性系统采用抗辐射部件和冗余的硬件来达到可靠性的要求，但是其价格昂贵，性能落后于今天的商用部件（COTS）。针对COTS在容错能力上存在的不足，软件容错技术可以在不改变硬件结构的情况下，有效的提高计算机系统的可靠性。 瞬时故障在软件层面上主要表现为控制流错误和数据流错误，本文主要针对控制流错误进行容错处理。软件实现的控制流容错技术通过在编译时加入冗余的容错逻辑，在程序执行时进行控制流错误的检测和处理。 如何在保证容错能力的同时，尽量降低冗余逻辑所带来的系统开销，是控制流容错需要解决的主要问题。本文从控制流错误的基本概念，容错单元的选择，签名信息的建立，签名点和检测点的插入位置几个角度对控制流容错进行研究，主要内容有： 1．对常见的控制流容错方法进行了分析比较，对其优点和不足予以说明。 2．对控制流错误进行了分类，以此为基础，提出了基于相关前驱基本块的控制流容错方法（CFCLRB）。 3．提出了一种签名流模型，提出了基于签名流模型的控制流容错方法（CFCSF）。该方法能够对基本块间控制流错误进行检测，具有较低的时间开销、空间开销和较高的错误覆盖率。同时，该方法可以根据容错尺度的要求，灵活的插入和删除签名点与检测点，具有极强的扩展性。该方法还可以应对动态函数指针这种编译时难以确定的控制流情况。 4．基于汇编指令对上述方法予以实现，并实现了国际上常用的控制流容错方法Control Flow Checking by Software Signatures（CFCSS）和Control-flow Error Detection through Assertions（CEDA）做为对比。通过加入冗余的指令逻辑，完成了对原程序的容错功能。 5．基于PIN工具实现了对控制流错误的注入，在相同的实验环境下对CFCLRB ，CFCSF，CFCSS，CEDA进行了对比实验。实验表明, CFCLRB的时间开销为26.9%，空间开销为27.6%，相比不具容错能力的原程序，其错误覆盖率从66.50%提升到97.32%。CFCSF的时间开销为14.7%，空间开销为22.1%，相比不具容错能力的原程序，其错误覆盖率从66.50%提升到96.79%。相比CFCSS，该方法的时间开销从37.2%下降到14.7%，空间开销从31.2%下降到22.1%，错误覆盖率从95.16%提升到96.79%。相比CEDA，该方法的时间开销从26.9%下降到14.7%，空间开销从27.1%下降到22.1%，错误覆盖率仅从97.39%下降到96.79%。 最后，本文对控制流容错的未来研究方向进行了展望。

子午岭人工油松林土壤种子库特征研究

采用野外调查取样和室内观测试验相结合的方法,研究了子午岭人工油松林土壤种子库的物种组成、密度、垂直分布等特征。结果表明:(1)土壤种子库储量密度平均为5711粒/m2,最大密度是9537粒/m2,最小密度是3563粒/m2。(2)土壤种子库的种子的垂直分布主要集中在0—2.5cm,2.5—5cm和5—7.5cm这3个层次,占75.38%～79.32%,枯枝落叶层和7.5—10cm层分布较少,占20.68%～24.62%。(3)土壤种子库物种组成主要为灌木和草本两个种类,无乔木植物,多年生草本在物种数和种子数上占据明显优势。

旱地土壤硝态氮与氮素平衡、氮肥利用的关系

利用长期肥料试验资料研究了土壤氮素平衡、氮肥利用率和土壤硝态氮之间的相互关系。结果表明,小麦不同施肥处理的氮肥利用率(NUE)为30.9%～65.8%,平均53.6%;土壤硝态氮累积率为2.3%～44.1%,平均13.2%;氮素表观损失率25.0%～42.7%,平均33.2%。一般情况下,氮素盈余值与氮肥用量呈正相关,与磷肥用量呈负相关;土壤中硝态氮的数量与氮素盈余值呈正比,与氮肥利用率呈反比。黄土旱塬地区,小麦在经济合理施氮条件下,氮素盈余值为13.79 kg/hm~2,硝态氮累积量为23.00 kg/hm~2,说明过量施用一定数量的氮肥对保持作物生产力和土壤氮素营养是必要的。

黄土丘陵区小流域综合治理生态经济过程分析——以宁夏隆德县李太平小流域为例

从生态经济系统分析角度出发,对小流域生态经济结构及其演变进行分析,以期评价小流域生态经济效益。对比分析了小流域生态经济系统土地利用结构及其适宜性、产业结构、消耗结构和饲料生产平衡,利用线性模型对土地利用结构进行了优化模拟,采用描述生态系统稳定性的多样性指数描述流域经济系统稳定性,并用静态和动态模型对治理经济效果进行评价。流域农、林、牧用地比例由1990年的6．2:2．0:1．0变为2003年的1．9:1．4:1．0;农业产值所占比重由79．6％下降为54．8％;林业、牧业、副业产值比例分别由9．6％、9．6％、1．1％上升为22．7％、 15．1％、7．4％。收入多样性指数呈增加趋势,消耗结构趋向合理,饲料供需平衡,经济评价中各指标均显示经济效益显著,表明生态经济结构明显有利于生态经济系统的进展演变,流域生态经济结构趋于稳定,生态经济效益显著。

黄河中游地区年径流对土地利用变化时空响应分析

以黄河中游河龙区间为研究区,以水土流失综合治理及生态环境建设导致的土地利用/覆被变化为背景,采用非参数统计法,基于区内38个水文站20世纪50年代至2000年水文数据,分析流域年径流对土地利用/覆被变化响应的时空变异特征,估算影响因素贡献率。结果表明:其中29条流域年径流量呈显著减少趋势,变率为0.17~2.61 mm/a;28条流域年径流量具有显著跃变时间,无定河流域各水文站跃变时间多在1970—1973年间,其余则多为1978—1985年,最晚为1994年;在5%、50%和95%的发生频率上,跃变前后时段年径流量减少幅度以30%~60%普遍,最大分别为73.2%、63.5%和69.7%;河龙区间整体呈显著减少趋势,变率为0.79 mm/a,跃变时间发生在1979年,3个频率上的减少幅度分别为46.5%、42.4%和24.1%。估算的11条流域中有9条土地利用/覆被变化等人类活动对流域径流减少影响程度超过50%。水土保持措施面积的增加,尤其淤地坝等水利水保工程措施的持续修建,对区域地表径流变化具有明显影响。