Temperature dependence of the Fermi level in low-temperature-grown GaAs

A variable-temperature reflectance difference spectroscopy study of GaAs grown by molecular beam epitaxy at low-temperature GaAs (LT-GaAs) shows that the Fermi level is mostly determined by the point defects in samples annealed at below 600 degrees C and can be shifted by photoquenching the defects. The Fermi level is otherwise almost temperature independent, leading to an estimated width of the defect band of 150 meV in the as-grown sample, For LT-GaAs annealed at 850 degrees C, the Fermi level is firmly pinned, most Likely by the As precipitates. (C) 1998 American Institute of Physics.

A direct digital frequency synthesizer with fourth-order phase domain Delta Sigma noise shaper and 12-bit current-steering DAC

This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a fourth-order phase domain single-stage Delta Sigma interpolator, and a 300-MS/s 12-bit current-steering DAC based on the Q(2) Random Walk switching scheme. The Delta Sigma interpolator is used to reduce the phase truncation error and the ROM size. The implemented fourth-order single-stage Delta Sigma noise shaper reduces the effective phase bits by four and reduces the ROM size by 16 times. The DDFS prototype is fabricated in a 0.35-mu m CMOS technology with active area of 1.11 mm(2) including a 12-bit DAC. The measured DDFS spurious-free dynamic range (SFDR) is greater than 78 dB using a reduced ROM with 8-bit phase, 12-bit amplitude resolution and a size of 0.09 mm(2). The total power consumption of the DDFS is 200)mW with a 3.3-V power supply.

Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides

Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buried oxides. Pre-radiation charge trapping is suppressed in the fluorinated buried oxides. The fluorine dose and post-implantation anneal time play a very important role in the control of charge trapping.

Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs) fabricated by using dielectric-free approach. The threshold current of 0.4 mA, which corresponds to the threshold current density of 0.5 kA/cm(2), differential resistance of 76 Omega, and maximum output power of more than 5 mW are achieved for the dielectric-free VCSEL with a square oxide aperture size of 9 mu m at room temperature (RT). L-I-V characteristics of the dielectric-free VCSEL are compared with those of conventional VCSEL with the similar aperture size, which indicates the way to realize low-cost, low-power consumption VCSELs with extremely simple process. Preliminary study of the temperature-dependent L-I characteristics and modulation response of the dielectric-free VCSEL are also presented.

A novel photonic crystal vertical cavity surface emitting laser based on coherent coupling

We demonstrate a novel oxide confined GaAs-based photonic crystal vertical cavity surface emitting laser (PC-VCSEL) operating at a wavelength of 850 nm based on coherent coupling. A ring-shaped light-emitting aperture is added to the conventional PC-VCSEL, and coherent coupling is achieved between the central defect aperture and the ring-shaped light-emitting aperture. Measurements show that under the continuous-wave (CW) injected current of 20 mA, a high power of 2 mW is obtained, and the side mode suppression ratio (SMSR) is larger than 20 dB. The average divergence angle is 4.2 degrees at the current level of 20 mA. Compared with the results ever reported, the divergence angle is reduced.

Single-mode holey vertical-cavity surface-emitting laser with ultra-narrow beam divergence

We demonstrated oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs) with a two-dimensional petal-shaped holey structure composed of several annular-sector-shaped holes. Four types of devices with different hole numbers were designed and fabricated. The measured results showed that the larger hole number was beneficial to purifying the lasing mode, and realizing the single-mode operation. The side mode suppression ratio (SMSR) exceeded 30 dB throughout the entire drive current. Mode selective loss mechanism was used to explain the single-mode characteristic. The single-mode devices possessed good beam profiles, and the lowest divergence angle was as narrow as 3.2 degrees (full width at half maximum), attributed to the graded index profile and the shallow etching in the top distributed Bragg reflector (DBR).

基于模糊提取的远程双向生物认证

传统的远程生物认证采用安全信道或者生物认证过程本地化的方法,具有较多的局限性.模糊提取可从生物特征输入中以容错的方式可靠地提取出均匀分布的随机密钥,当输入发生变化且变化很小时,该密钥保持不变.基于这一重要工具,给出了一个零存储的非安全信道双向生物认证方案.该方案无需存储和传输用户的生物特征,有效保护了用户隐私,并能够抵抗假冒攻击和多服务器合谋攻击.此外,所给方案还具有良好的可扩展性,集成口令和智能卡可产生多因素认证方案,并支持用户注册更新.

Synthesis Gas Generation by Chemical-Looping Reforming Using Ce-Based Oxygen Carriers Modified with Fe, Cu, and Mn Oxides

Chemical-looping reforming (CLR) is a technology that can be used for partial oxidation and steam reforming of hydrocarbon fuels. It involves the use of a metal oxide as an oxygen carrier, which transfers oxygen from combustion air to the fuel. Composite oxygen carriers of cerium oxide added with Fe, Cu, and Mn oxides were prepared by co-precipitation and investigated in a thermogravimetric analyzer and a fixed-bed reactor using methane as fuel and air as oxidizing gas. It was revealed that the addition of transition-metal oxides into cerium oxide can improve the reactivity of the Ce-based oxygen carrier. The three kinds of mixed oxides showed high CO and H-2 selectivity at above 800 degrees C. As for the Ce-Fe-O oxygen carrier, methane was converted to synthesis gas at a H-2/CO molar ratio close to 2:1 at a temperature of 800-900 degrees C; however, the methane thermolysis reaction was found on Ce-Cu-O and Ce-Mn-O oxygen carriers at 850-900 degrees C. Among the three kinds of oxygen carriers, Ce-Fe-O presented the best performance for methane CLR. On Ce-Fe-O oxygen carriers, the CO and H-2 selectivity decreased as the Fe content increased in the carrier particles. An optimal range of the Ce/Fe molar ratio is Ce/Fe > 1 for Ce-Fe-O oxygen carriers. Scanning electron microscopy (SEM) analysis revealed that the microstructure of the Ce-Fe-O oxides was not dramatically changed before and after 20 cyclic reactions. A small amount of Fe3C was found in the reacted Ce-Fe-O oxides by X-ray diffraction (XRD) analysis.

The design and operation of a new clapboard-type internal circulating fluidized-bed gasifier

The design and operation of a new clapboard-type internal circulating fluidized-bed gasifier is proposed in this article. By arranging the clapboard in the bed, the gasifier is thus divided into two regions, which are characterized by different fluidization velocities. The bed structure is designed so that it can guide the circulating flow passing through the two regions, and therefore the feedstock particles entrained in the flow experience longer residence time. The experimental results based on the present new design, operating in the temperature range of 790 degrees C-850 degrees C, indicate that the gas yield is from 1.6-1.9 Nm(3)/kg feedstock, the gas enthalpies are 5,345 kJ/Nm(3) for wood chip and 4,875 kJ/m(3) for rice husk, and a gasification efficiency up to 75% can be obtained.

黄土高原子午岭地区植被恢复过程中的土壤质量评价

选择黄土高原子午岭地区植被自然恢复1~140 a不同年限的阳坡坡地为研究对象,通过相关性分析筛选土壤表层(0~20 cm)16项表征土壤物理、化学、生物学性质的指标,运用主成分分析计算土壤质量综合指数,评价子午岭地区植被恢复过程对土壤质量的影响。结果表明:土壤总孔隙度、平均重量直径(MWD)、有机质质量分数、速效磷质量分数、蔗糖酶活性、碱性磷酸酶活性、真菌数量、微生物总量构成土壤质量评价指标体系;土壤质量综合指数随植被恢复年限的增加而增加;植被自然恢复1~140 a间,土壤质量综合指数变化范围为0.155 9~0.850 9,较裸露休闲地增加4.2~27.5倍;根据土壤质量综合指数变化规律,可将140 a植被恢复过程中的土壤质量演变过程分为3个阶段,即植被恢复初期(1~20 a)的土壤质量综合指数呈快速增长,植被恢复中期(20~40 a)的土壤质量综合指数呈波动性增长,植被恢复后期(40~140 a)的土壤质量综合指数呈稳定增长。植被演替过程中不同植被生活型土壤质量综合指数表现为乔木林地>灌木林地>草地。

两种聚砜预聚物和多嵌段聚合物的合成及形态结构

以双酚A、酚酞和4，4'-二氯二茉砜为单体，合成了双酚A型聚砜和酚酞型聚砜两系列不同分子量的预聚物。将这两系列预聚物作为硬段，以不同分子量的聚氧化丙烯或聚氧化丙烯-聚二甲基硅氧烷作为软段，以二异氰酸酯二苯甲烷作为硬段和软段间的连接桥，合成了硬、软段分子量不同的双酚A型聚砜-聚氧化丙烯多嵌段聚合物、双酚A型聚砜-（聚氧化丙烯-聚二甲基硅氧烷）多嵌段聚合物的酚酞型聚砜-聚氧化丙烯多嵌段聚合物。经红外光谱分析、分子量测定和粘度测定等表征，确认产物与预想结果相符。用示差扫描量热仪、扭辨分析仪和电子显微镜研究了硬段预聚物和多嵌段聚合物的形态结构及性能。硬段预聚物在实验温度范围（-30到250 ℃）内，具有三种转变，分别为局部短程有序（60到70 ℃）的破坏，玻璃化转变，玻璃化温度与分子量的关系如下式所示：双酚A型聚砜 T_g = 462 - 8.07 * 10~4/M-bar 酚酞型聚砜 Tg = 519 - 8.33 * 10~4/M-bar和较大范围的长程有序性的解离。在双酚A型聚砜-聚氧化丙烯多嵌段聚合物体系中，当硬段分子量固定在1500时，多嵌段聚合物的形态结构随软段的分子量降低由两相结构（软段分子量≥1000）变成为单相结构（软段分子量为450）。当软段分子量固定为2000时，多嵌段聚合物的形态结构随硬段的分子量增加由单相结构（硬段分子量为700）变为两相结构（硬段分子量≥1500）。双酚A型聚砜-（聚氧化丙烯-聚二甲基硅氧烷）多嵌段聚合物均显示两相结构（软段分子量2400，硬段分子量≥700）。在硬段分子量增加到3900就发生相倒转，软段变为分散相，硬段成为连续相。酚酞型聚砜-聚氧化丙烯多嵌段聚合物，当固定分子量为2000时，硬段分子量在本工作的变化范围内，850至1900，所得产物均为两相结构。

用电动势方法测定Pr-Al、Nd-Al体系的热力学性质和Nd-Al合金组成

本文测定了如下电池 Pr(固)|KCl-NaCl+2%PrCl_3|Pr-Al(X_(Pr) = 0.09-0.19) Pr-Al(X_(Pr) = 0.09-0.19)|KCl-NaCl+2% PrCl_3|Pr-Al(待测) Nd(固)|KCl-NaCl+2%NdCl_3|Nd-Al(X_(Nd) = 0.09-0.19) Nd-Al(X_(Nd) = 0.09-0.19)|KCl-NaCl+2%NdCl_3|Nd-Al(待测)的电动势与温度，待测合金组成的关系。温度范围是670－850 ℃，组成范围是Pr或Nd的摩尔分数从0.01到0.190。在此基础上计算了Pr-Al、Nd-Al合金熔体中各金属的活度、偏摩尔自由能、偏摩尔熵以及合金体系的摩尔混自由能、摩尔混合熵和摩尔混合焓，计算了合金相图的部分液相线温度和不同温度下PrAl_4、NdAl_4的标准生成自由能。在空气和氯气混合气氛下对电池Nd-Al(X_(dd) = 0.09-0.19)|KCl-NaCl+NdCl_3|Nd-Al(待测)的电动势与待测合金组成、电解质中NdCl_3含量的关系进行了探讨。为在电解Nd-Al合金过程中快速、近似分析合金组成提供了依据。在此基础上提出了一种快速、近似的分析方法。