Characterisation of a pathogenic virus isolated from marine threadfin fish (Eleutheronema tetradactylus) during a disease outbreak

An unknown virus was isolated from massive mortality of cultured threadfin (Eleutheronema tetradactylus) fingerlings. The virus replicated in BF-2 fish cell line and produced a plaque-like cytopathic effect. Electron micrographs revealed non-enveloped, icosahedral particles approximately 70-80 nm in diameter composed of a double capsid layer. Viroplasms and subviral particles approximately 30 run in diameter and complete particles of 70 nm in diameter were also observed in the infected BF-2 tissue culture cells. The virus was resistant upon pH 3 to 11 and ether treatment. It is also stable to heat treatment (3 h at 56 T). Replication was not inhibited by 5-iododeoxyuridine (5-IUdR). Acridine orange stain revealed typical reovirus-like cytoplasmic inclusion bodies. Electrophoresis of purified virus revealed 11 segments of double-stranded RNA and five major structural polypeptides of approximately 136, 132, 71, 41 and 33 kDa. Based on these findings, the virus isolated was identified to belong to the genus Aquareovirus and was designated as threadfin reovirus. This virus differed from a majority of other aquareovirus by its increase in virus infectivity upon exposure to various treatments such as high and low pH, heat (56 degreesC), ether and 5-IUdR. The RNA and virion protein banding pattern of the threadfin reovirus was shown to differ from another Asian isolate, the grass carp hemorrhage reovirus (GCV). Artificial injection of the threadfin reovirus into threadfin fingerlings resulted in complete mortality, whereas sea bass (Lates calcarifer) fingerlings infected via bath route showed severe mortality within a week after exposure. These results indicate that the threadfin virus is another pathogenic Asian aquareovirus isolate that could cross-infect into another marine fish, the sea bass. (C) 2002 Elsevier Science B.V. All rights reserved.

Development of a positive-negative selection procedure for gene targeting in fish cells

The gene targeting technique is a powerful tool for analyzing functions of cloned genes and for generating transgenic animals with site-directed integration of foreign genes. In order to develop this technique in fish, positive-negative selection (PNS) and homologous recombination vectors were constructed, and their expression was examined in fish cells. A vector (pNK) for PNS consists of the neomycin resistance gene (neo) as a positive selectable marker gene and the herpes simplex virus (HSV) thymidine kinase (tk) gene as a negative selectable marker gene. Positive selection with geneticin (G418) of epithelioma papulosum of carp (EPC) cells transfected with linearized pNK vector yielded 350 colonies, while double selection of transfected EPC cells with G418 and gancyclovir (Gc) resulted in nearly complete cell death, demonstrating that the PNS procedure is effective in fish cells. Homologous recombination vectors consist of the Xiphophorus melanoma receptor kinase (X mrk(Y)) gene as homologous sequence in addition to the neo and tk genes. Conditions for homologous recombination vector transfection and drug selection were established. After verification of the feasibility of expression of homologous recombination vectors in EPC cells, the first gene targeting experiments were attempted in the Xiphophorus melanoma cell line, PSM. Positive-negative selection of the targeting vector-transfectants led to a low enrichment in this particular cell line. The reasons for the low enrichment in PSM cells were discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

Introduction of the human lactoferrin gene into grass carp (Ctenopharyngodon idellus) to increase resistance against GCH virus

Haemorrhage can be an epidemic and fatal condition in grass carp. It is known now that the Grass Carp Haemorrhage Virus (GCHV) triggers haemorrhage. Human lactoferrin (hLF) plays an important role in the non-specific immune system, making some organisms more resistant to some viruses. Sperm of grass carp was mixed with linearized pCAhLFc, which is a DNA construct containing an hLF cDNA and the promoter of common carp beta-actin gene, and then electroporated. Then, mature eggs were fertilized in vitro with the treated sperm cells. The fry were sampled and analyzed by polymerase chain reaction (PCR). Results indicated that the foreign gene had been transferred successfully into the cells of some fry. Under optimal electroporation conditions, the efficiency of gene transfer was as high as 46.8%. About 35.7% of treated 5-month-old grass carp contained foreign genes. Most transgenic fry demonstrated significant delays in onset of symptoms of haemerrhage after injection of GCHV, suggesting a significant positive relationship between hLF cDNA and levels of disease resistance (P < 0.01). Results suggest that transgenic grass carp could be bred for increased resistance to haemorrhage. (C) 2002 Elsevier Science B.V. All rights reserved.

High efficiency operation of butt joint line-defect-waveguide microlaser in two-dimensional photonic crystal slab

Butt joint line-defect-waveguide microlasers are demonstrated on photonic crystal slabs with airholes in a triangular lattice. Such microlaser is designed to increase the output power from the waveguide edge directly. The output power is remarkably enhanced to 214 times higher by introducing chirped structure in the output waveguide. The lasing mode operates in the linear dispersion region of the output waveguide so that the absorption loss due to the band-edge effect is reduced. The laser resonance is illustrated theoretically using the finite difference time domain method. A practical high power efficiency of 20% is obtained in this microlaser. (C) 2008 American Institute of Physics.

Chemical liquid phase deposition of thin aluminum oxide films

Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al-2(SO4)(3)]=0.0837 mol.L-1, [NaHCO3]=0.214 mol.L-1, 15 degreesC. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy, Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance

Photoreflectance (PR) has been used to study surface electronic properties (electric field, Fermi level pinning, and density of surface states) of undoped-n(+) (UN+) GaAs treated in the solution of ammonium sulfide in isopropanol. Complex Fourier transformation (CFT) of PR spectra from passivated surface shows that the sulfur overlay on GaAs surface makes no contribution to Franz-Keldysh oscillations (FKOs). The barrier height measured by PR is derived from surface states directly, rather than the total barrier height, which includes the potentials derived from Ga-S and As-S dipole layers. Comparing with native oxidated surface, the passivation leads to 80 meV movement of surface Fermi level towards the conduction band minimum, and reduction by more than one order in density of surface states. (C) 2003 Elsevier Science B.V. All rights reserved.

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].

Influence of precipitates on GaN epilayer quality

GaN epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive X-ray spectroscopy and energy dispersive S-ray spectroscopy. Precipitates were observed to mainly consist of O impurity whose strengths were weaker than surrounding matrix. The precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. The larger precipitates often joined to cracks in the TEM specimens. The crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. Yellow luminescence of the epilayers was imaged by cathodoluminescence. The distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (C) 2000 Elsevier Science S.A, All rights reserved.

Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.

Small-divergence singlemode emitting tapered distributed-feedback quantum cascade lasers

A tapered distributed feedback quantum cascade laser emitting at lambda similar to 8.1 mu m is reported. Utilising a tapered waveguide structure with a surface metal grating, the device exhibited singlemode operation over the temperature range of 100 to 214 K, with sidemode suppression ratio > 20 dB and a nearly diffraction limited far-field beam divergence angle of 5.4 degrees.

低轮Camellia的碰撞攻击

Camellia是欧洲密码大计划NESSIE的最终获胜者, 首先构造了Camellia的4轮区分器, 然后利用这些区分器和碰撞搜索技术分析Camellia的安全性. 在密钥长度为128比特的情况下, 攻击6轮Camellia的数据复杂度小于210个选择明文, 时间复杂度小于215次加密; 攻击7轮Camellia的数据复杂度小于212个选择明文, 时间复杂度小于254.5次加密; 攻击8轮Camellia的数据复杂度小于213个选择明文, 时间复杂度小于2112.1次加密; 攻击9轮Camellia的数据复杂度小于2113.6个选择明文, 时间复杂度小于2121次加密. 在密钥长度为192/256比特的情况下, 攻击8轮Camellia的数据复杂度小于213个选择明文, 时间复杂度小于2111.1次加密; 攻击9轮Camellia的数据复杂度小于213个选择明文, 时间复杂度小于2175.6次加密; 攻击10轮Camellia的数据复杂度小于214个选择明文, 时间复杂度小于2239.9次加密. 结果显示碰撞攻击是目前对低轮Camellia最有效的攻击方法.

藏文统计语言模型研究

藏文语言模型是藏文信息处理的基础和核心技术。研究和开发具有强大描述藏语能力的藏文统计语言模型对藏文信息处理的各个应用领域，如机器翻译、藏文语音识别、藏文输入法、藏字校对和藏文信息检索等具有重要的现实意义和实用价值，构建藏文语言模型是藏文信息处理的关键性基础工作，是实现藏文信息化的必要步骤。 本文首先对藏文自动分词进行了研究，实现了基于格助词的藏文最大匹配分词方案。接着研究了统计语言模型构造、数据平滑等技术，实现了一个藏文统计语言模型系统，主要包括词频统计、模型训练和模型评估三个模块。为解决数据稀疏问题，实现了多种模型平滑方法，包括Witten-Bell平滑、绝对折扣平滑、Kneser-Ney平滑和修正的Kneser-Ney平滑。 本文的实验在收集和整理一定规模的藏文语料并进行预处理的基础上，使用分词程序对藏文文本进行分词，并将藏文文本分成训练语料和测试语料两个部分。接着使用测试语料训练得到藏文统计语言模型，并使用了多种平滑方法，结合测试语料对藏文统计语言模型进行评估，比较了不同平滑方法的优劣。

使用Gantt图建立EPC工作流模型的研究

论文结合建筑工程项目的特点,讨论如何使用广义Gantt图建立基于EPC的工作流过程模型,旨在为建筑工程项目的工作流管理提供一个新的思路。