注氮剂量对SIMON材料性能影响的研究

采用氧氮共注的方法制备了氮氧共注隔离 SOI (SIMON) 圆片,对制备的样品进行了二次离 子质谱和透射电镜分析,并对埋层结构与抗辐射性能的机理进行了分析.结果表明,注氮剂量较低 时埋层质量较好.机理分析结果表明,圆片的抗辐照性能与埋层质量之间存在很密切的关系,埋层 的绝缘性能是影响器件抗辐射效应的关键因素.

New way to enhance the uniformity of self-organized InAs quantum dots

Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the mean height of Quantum dots. Uniformity of quantum dots has been enhanced because the full width of half maximum of photoluminescence decrease from 80meV to 27meV in these samples as the interruption time increasing from 0 to 120 second. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time. This effect can be used to control the energy level of quantum dots. The phenomena mentioned above can be attributed to the diffusion of In atoms from the top of InAs islands to the top of GaAs cap layer caused by the difference of surface energies between InAs and GaAs.

TDLAS测量甲烷/空气预混平面火焰温度和H2O浓度

基于可调谐二极管激光器吸收光谱技术(TDLAS)建立了温度和H2O浓度测量系统，利用光谱数据库Hitran2004在1393nm附近选择了在500-1300K有很高测温灵敏度两条水吸收线:7168.437 cm-1,7185.597 cm-1。在1KHz的扫描频率下，利用直接吸收-扫描波长法对甲烷/空气预混平面火焰进行测量，并进行边界层修正，与热电偶的对比结果显示，在温度区间1100-1350K，两者最大相差80K(6.7%);水蒸气组分浓度与计算值平均相差小于0.02(10%)。

用三梯度法测量束流发射度的研究

准确测量发射度对加速器束流的调制和性能的评估极端重要,本文介绍在HIRFL(兰州重离子加速器)现有设备基础上,利用三梯度法测量束流发射度的系统,讨论了测量原理和方法,以及测量中要注意的问题,并对数据的计算处理做了详述。专门设计了一套软件系统,以实现束流发射度、束流剖面等束流参数的实时测量。该系统具有可靠性好、测量直观、测量较准确等优点。