163 resultados para 332.6327
Resumo:
Undoped Ga-Sb samples were investigated by positron lifetime spectroscopy (PAS) and the coincident Doppler broadening (CDB) technique. PAS measurement indicated that there were monovacancy-type defects in undoped Ga-Sb samples, which were identified to be predominantly Ca vacancy (V-Ga) related defects by combining the CDB measurements. After annealing of these samples at 520 C, positron shallow trapping have been observed and should be due to Ga-Sb defects. Undoped Ga-Sb is intrinsically p-type having a residual carrier density of 10(16)-10(17) cm(-3). And the Ga-Sb antisite defects are stable in the (0), (1-) and (2-) charge states and act as a double acceptor. Thus, we infer that Ga-Sb antisite defects are the acceptor contributing to the p-type conduction for undoped samples. (C) 2004 Elsevier B.V All rights reserved.
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Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily doped InGaAs/InAlAs quantum well by using variable temperature Hall measurement. The energy gap of symmetric and antisymmetric states is estimated to be 4meV from the analysis of beating node positions. In addition, the temperature dependences of the subband electron mobility and concentration were also studied from the mobility spectrum and multicarrier fitting procedure.
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We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 mu J, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz. (C) 2005 Elsevier B.V. All rights reserved.
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在《“中介逻辑”的特征问题》一文里,我们对近来朱梧梗、肖奚安等同志发表的称为“中介逻辑”的命题系统MP的三个联接词(对立否定),~(模糊否定)与→(蕴含)建立了如下的三值真值表:
Resumo:
采用DEAE-sephadex A-50、Sephadex G-100、CM-sepharose cl-6B三步柱层析,从烙铁头(T. mucrosquamatus)蛇毒中纯化得到的精氨酸酯酶在聚丙烯酰胺凝胶电泳(pH 8.3)和SDS-聚丙烯酰胺凝胼电泳中均呈现单一的蛋白带。其分子量为29000,等电点pI为5.2;由225个氨基酸残基组成,其中Gly,Asp和Glu的含量较高。它是一个糖蛋白,含有0.5%的中性已糖和0.75%的唾液酸,对热及酸碱变化较稳定。在280nm波长处有典型的蛋白质吸收峰,此时的消光数E0.1%/1cm为1.332。该酶具有较强的精氨酸酯酶活性和纤维蛋白原溶解活性,无出血活性、酪蛋白水解活性以及粗毒中含有的其它酶活性。从烙铁头(T. mucrosquamatus)蛇毒中纯化的具纤维蛋白原溶解活性的精氨酸酯酶(MFAE)是一丝氨酸蛋白酶,其活性可被PMSF抑制而不受EDTA的影响。MFAE酶促反应的最适pH为8.4,最适温度55 ℃; pH7.6、37 ℃时水解BAEER的米氏常数K_m为20 * 10~(-3)M。该酶能降解纯化人纤维蛋白原的Bβ链以及纯化牛纤维蛋白原的Aα和Bβ链,并有一定的纤维蛋白溶解活性。它能明显延长兔血浆的凝血酶时间和复钙时间。纯化的MFAE无出血活性、凝血酶样活性及血小板聚集活性,对ADP、AA、TMVA、Melittin等诱导的血小板聚集也无抑制或解聚作用。本文还测定了它对凝血酶及胞浆毒特异性合成三肽底物的水解活性。
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在黑白仰鼻猴(Rhinopithecus bieti)分布区北端的南仁(99o04’E, 28o34’N), 野外工作分别于2001年4月10日 - 6月30 日(代表冬末和春季),9月14日 - 12月20日(夏秋季)进行。我们分别用粪便取样法、录像带记录和直接观察法收集了猴群生境的垂直利用、过夜处选择和社会组织数据。此外,我们于1998年8月20日到12月31日在中科院昆明动物研究所老所利用全发生取样法(All-Occurence sampling)收集了一个单雄多雌单元(One-male, multi-female unit: OMU)的性行为数据。另外,我们利用昆明动物所1994 - 2003年和昆明动物园1991 - 2003年笼养黑白仰鼻猴群的出生记录来说明出生季节和出生间隔。 黑白仰鼻猴群全年在3500 - 4300 m的林带上活动,集中利用的海拔带为3900 - 4200 m,这可能与猴群的主食(松萝)主要分布于高海拔有关。冬季, 山沟中的粪便密度高于山脊,这可能是猴群在沟中过夜的缘故。猴群喜欢在树高(27.5 ± 3.2 m)较高、胸径(57.9 ± 16.9 cm)和树冠(6.3 ± 1.4 m)大的针叶树(云冷杉)上过夜。猴群冬季喜欢在阳坡中部的针叶树上过夜,这样既安全又可以接受适量的阳光照射。这是猴群在选择最安全和最暖和过夜处的一种折衷策略。 1994年猴群OMUs大小为7.8 ± 1.7(n = 17),成年性比(M/F)是1.0: 3.8。2001年OMUs大小为10.1 ± 3.7 (n = 15),成年性比是1.0: 4.9。1994-2001年,OMUs中每个成年雌性每年的平均增长率是0.04。这种OMU-band两层社会组织与Kirkpatrick(1996)的报道一致。 雌性以匍匐地面或栖木上,同时面部和视线左右摆动,或者坐着上下移动头部的动作邀配;雄性则以伴有特别的叫声、露齿动颌表情邀配。在有射精记录的观察日中,平均每5.2次爬跨有1次射精,而单次爬跨就射精的仅占4.4%。雌性邀配了18次射精爬跨的大多数(72%),但163次非射精爬跨中她们邀配的仅为45%。雄性在射精交配中叫声多于非射精交配。该种交配模式与其它疣猴亚科动物相似,而性内交配竞争可能与这种模式的进化有关。 笼养黑白仰鼻猴群的出生日期为12 - 6月份,出生高峰期为3 - 5月份。猴群的平均出生日期为4月18日(标准差为43天),中位出生日期为4月10日。猴群的出生间隔平均为624 ± 150天(n = 15,范围:332 - 787天)。幼猴可活到1岁后的出生间隔(706 ± 71, n = 12, 498 - 787天)显著长于1岁内死亡或流产后的出生间隔(428 ± 87, n = 5, 332 - 568天)。婴猴性比(M/F)显著偏离1: 1。
Resumo:
在较高工作气压(332.5~399Pa)下,采用等离子增强化学气相沉积(PECVD)工艺制备了优质的本征纳米硅薄膜及掺磷的纳米硅薄膜,并采用X射线衍射(XRD)、拉曼散射(Raman) 测试技术对其进行了测试和分析.结果表明纳米硅薄膜的XRD谱中存在(111)、(220)和(331)峰位;Raman谱中显示出其薄膜中的晶粒的大小(2~5nm)符合纳米晶的要求.将制备的纳米硅薄膜初步用于栅极/ITO/n-nc-Si∶H/i-nc-Si∶H/p-c-Si/Al/Ag结构的异质结(HIT)太阳能电池,开路电压(Voc)达404mV,短路电流密度(Jsc)可达到34.2mA/cm2(AM1.5,100mW/cm~2,25℃).
Resumo:
A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2:1 with a peak current density of 22.5kA/cm~2. The HEMT has a 1μm gate length with a-1V threshold voltage. A logic circuit called a monostableto-bistable transition logic element (MOBILE) circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.