174 resultados para 327-U1363D


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草鱼胸腺位于鳃腔背上角,紧贴在鳃腔膜之下,突起部分伸入到下颞凹,整个胸腺形态形似菱角。其组织结构可分为外区、中区和内区。中区和内区主要由淋巴细胞和网状上皮细胞构成,在组织结构上分别类似于高等脊椎动物胸腺的皮质和髓质区。胸腺淋巴细胞可分大、中、小三型,小淋巴细胞约占78%,中淋巴细胞约占15%,大淋巴细胞约占4%。在Ⅰ龄草鱼,每毫克胸腺约有3.6×10~6个胸腺淋巴细胞,Ⅱ龄草鱼约为2×10~6。Ⅰ至Ⅱ龄草鱼胸腺重量明显地随鱼龄增加,Ⅱ龄以上草鱼胸腺重量变化无规律,成鱼胸腺表现出明显的退化。草鱼胸腺除年龄性

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自来水中的低量余氯对白暨豚无明显的刺激作用。豚池水温的变化情况与长江中、下游相似,极温对豚有不利影响。不同温度下,池水中磷酸盐含量的日增加率有显著差异,铵氮和硝酸盐氮的日增加系数相近,分别为0.327和0.2468,而亚硝酸盐氮的日增加系数在0.397—0.539之间,受温度的影响较大。池水有机物耗氧量增加不显著,含量与时间的相关式符合Y=aX~b型。缺少阳光照射是池水无机氮化合物增加较快、有机物分解较慢的原因之一。

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1.寄生长吻鮠上的粘孢子虫有3种:巨囊两极虫和四极虫一种,寄生在胆囊中,碘泡虫一种寄生在肾脏中;寄生蛇鮈上的粘孢子虫有2种:湖北碘泡虫,寄生在脑、鳃、肾、体腔、肠,主要寄生在脑,楚克拉虫一种,寄生在胆囊中。2.粘孢子虫对长吻鮠、蛇鮈的感染率存在明显的季节变化;对长吻鮠的感染率最高值出现在6月(95%),最低值出现在2月(43%),年平均值为65%;湖北碘泡虫对蛇鮈的总感染率最高值出现在12—2月(63—67%),其次在8月(58%),春秋两季感染率较低(36—44%),年平均值为51%。3.总感染率(IR

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电镜观察到雌性银鲫肝脏中正在形成的卵黄物质具有晶形主体结构,银鲫卵的卵黄粒内无晶形主体,第一次卵裂前的受精卵卵黄粒内有两种形式的空泡。一种是一些中空的小空泡;另一种是一个大的空泡,泡内含有线粒体和颗粒状的核糖体,泡的边缘有片层状的类脂物。受精卵中的线粒体内部结构多样,有些含有颗粒状物,有些含有片层状的类脂物。

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本文总结了稗草栽培的技术要点和鱼种合理放养的经验,测定了种稗塘堰底土和水中的氮、磷含量的变化,观察了稗草在分解过程中氮、磷营养物质的释放情况及其对浮游生物增殖的影响,进而对种稗养鱼的基本原理作了初步的分析。

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We captured free-ranging male Yangtze finless porpoises over three seasons and assayed leukocytes and serum biochemistry to investigate physiological responses to the capture and handlings. Serum thyroid hormones (THs) declined sharply in those porpoises compared with hormone variation in a captive male finless porpoise. Hypernatremia and hypokalemia were also significant in the free-ranging animals suggesting that conservation of serum sodium might be acutely vital for this freshwater subspecies. The animals captured in spring showed more significant neutrophilia and eosinopenia than those captured in autumn suggesting that they may be more affected by capture during the breeding season. Furthermore, physical examination of porpoises when out of the water was apparently stressful, particularly when they were kept out of the water for longer periods. However, an increase in circulating THs may be an adaptive response to accommodate these short-term stresses.

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This study was designed to determine cytotoxic effects of PBDE-47 and HBCDs individually or with a mixture of both compounds exposure to Hep G2 cells. The results showed PBDE-47 and HBCDs induced increase of nitric oxide synthase (NOS) activity, release of NO. dissipation of mitochondria membrane potential and cell apoptosis. Exposure to HBCDs induced ROS formation. Moreover, preincubation with PTIO (NO scavanger) and N-acetylcysteine (ROS scavanger) partially reversed cytotoxic effects of these compounds. The possible mechanism is that PBDE-47 and HBCDs could boost generation of NO and/or ROS, impact mitochondria, and result in start-ups of apoptosis program. Cells exposed to mixture of both compounds and each of them showed non-apoptotic rate significant difference, but the combination of them caused more adverse effects on cells. These results Suggest that PBDE-47 and HBCDs in single and complex exposure have the cytotoxic activity of anti-proliferation and induction of apoptosis in tumor cells in vitro. (C) 2008 Elsevier B.V. All rights reserved.

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The allelopathic interactions between Potamogeton maackianus and toxic cyanobacteria (Microcystis aeruginosa) were studied. P maackianus inhibited the growth of M. aeruginosa, both in a coexistence culture system and in exudates experimental culture system. M. aeruginosa also showed effects on the secondary metabolic biosynthesis and secreting behavior of P maackianus. The main lipophilic components of the hexane extracts and the exudates from the macrophyte were analyzed through GC-MS determination. The lipophilic components of the hexane extracts and the exudates from P. maackianus were influenced by M. aeruginosa or their released chemicals. Comparing the lipophilic constituents of the hexane extracts with those in the exudates, the results showed that weak polar compounds contained in the macrophytes can be secreted into the surrounding water. Many compounds, such as N-phenyl-2-naphthalenamine and isopropyl myristate, were detected both in the hexane extracts and the exudates. The changes of lipophilic components in the hexane extracts would be a response to the stress of toxic cyanobacteria or their released toxins. Those changes of exudates, especially the increased content of N-phenyl-2-naphthalenamine, might also be an induced defensive behavior mediated by the released toxins from M aeruginosa. The study results about reciprocal allelopathic responses between macrophytes and cyanobacteria can help in the management of eutrophic waters, and is also important information concerning strategies for recovering eutrophic waters.

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The changes of cladoceran zooplankton from 1980 to 1996 were studied in a hypereutrophic subtropical Chinese lake, Lake Donghu, and an enclosure experiment was conducted to examine the possible role of the increased fish production in the enhancement of Moina micrura in the lake after mid-1980s. During the 1980s, the most striking event of the cladoceran community in the lake was that dominance of Daphnia was replaced by Moina following a steady increase in the production of planktivorous fish. This replacement was a direct result of increased fish predation, since our enclosure experiment indicates that Moina are less vulnerable to fish predation than Daphnia, and that increase in fish-stocking rate favors the development of M. micrura. The stronger resistance of M. micrura to fish predation may be attributed to its smaller body size and higher intrinsic growth rate than the daphnids. The present study has a strong parallel with the responses of zooplankton community to predators observed in many temperate lakes, and perhaps the only real difference is that in our lake the small rapidly growing cladoceran is Moina, rather than Bosmina or some other typical temperate take species. In the present study, the strong fish predation caused a shift from Daphnia to small zooplankton but not a corresponding increase in phytoplankton, which is in sharp contrast to what is expected with the classic "trophic cascade" process.

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We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density (similar to 5.9x 10(10) CM-2) good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.

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Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilution (R-H=[H-2]/[SiH4 + CH4]) values of 12, 22, 33, 102 and 135. The impacts of RH on the structural and optical properties of the films were investigated by using UV-VIS transmission, Fourier transform infrared (FTIR) absorption, Raman scattering and photoluminescence (PL) measurements. The effects of high temperature annealing on the films were also probed. It is found that with increasing hydrogen dilution, the optical band gap increases, and the PL peak blueshifts from similar to1.43 to 1.62 eV. In annealed state, the room temperature PL peak for the low R-H samples disappears, while the PL peak for the high R-H samples appears at similar to 2.08 eV, which is attributed to nanocrystalline Si particles confined by Si-C and Si-O bonds.

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Optical properties and surface structures of InAs/CaAs self-assembled quantum dots (QDs) grown on 2 nm In-0.2 Ga0.8As and x ML GaAs combined strain-buffer layer were investigated systematically by photoluminescence ( PL) and atomic force microscopy (AFM). The QD density increased from similar to 1.7 x 10(9) cm(-2) to similar to 3.8 x 10(9) cm(-1) due to the decreasing of the lattice mismatch. The combined layer was of benefit to increasing In incorporated into dots and the average height-to-width ratios, which resulted in the red-shift of the emission peaks. For the sample of x = 10 ML, the ground state transition is shifted to 1350 nm at room temperature.

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A novel AlGaN/GaN/GaN/GaN double heterojunction high electron mobility transistors (DH-HEMTS) structure with an AlN interlayer on sapphire substrate has been grown by MOCVD. The structure featured a 6-10 nm In0.1Ga0.9N layer inserted between the GaN channel and GaN buffer. And wer also inserted one ultrathin. AlN interlayer into the Al/GaN/GaN interface, which significantly enhanced the mobility of two-dimensional electron gas (2DEG) existed in the GaN channel. AFM result of this structure shows a good surface morphology and a low dislocation density, with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu m x 5 mu m. Temperature dependent Hall measurement was performed on this sample, and a mobility as high as 1950 cm(2)/Vs at room temperature (RT) was obtained. The sheet carrier density was 9.89 x10(12) cm(2), and average sheet resistance of 327 Omega/sq was achieved. The mobility obtained in this paper is about 50% higher than other results of similar structures which have been reported. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu mx5 mu m. A mobility as high as 1950 cm(2)/Vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 Omega/sq was achieved. The HEMTs device using the materials was fabricated, and a maximum drain current density of 718.5 mA/mm, an extrinsic transconductance of 248 mS/mm, a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved.