163 resultados para 312
Resumo:
鱼类病原菌耐药质粒的研究概况李爱华王伟俊(中国科学院水生生物研究所,武汉430072自50年代起,许多国家仿照畜牧业上的做法,广泛使用化学治疗药物来防治鱼类疾病。其后果不可避免地导致耐药菌的出现。早在1957年,美国就观察到由耐磺胺药的Aeromon...
Resumo:
本文报道淡水、土壤自由生活线虫国内新记录11种,即:田园素矛线虫Achromadoraruricola,半棘素矛线虫Achromadorasemiarmata,叉齿烙线虫Ironusdentifurcatus,好逸烙线虫Ironusignavus,亲邻三孔线虫Tripylaaffinis,球形三孔线虫Tripylaglomerans,谢氏小三孔线虫Tripylinasheri,墙根绕线虫Plectusparietinus,似疑绕线虫Plectusinquirendus,愁容筒咽线虫Cylindrolaim
Resumo:
<正> 秀体溞(Diaphanosoma)是枝角类栉足族仙达溞科(Sididae)中包括种类最多的一个属,根据已往的记录,共计约有20种。关于我国秀体溞的计载,总共只有7种。最早是由 Spandl 在广东记述了镰角秀体溞(D.excisum Sars)一种。上野益三曾发表过有关我国枝角类的文章多篇,他报告了浙江、四川、台湾、黑龙江、吉林以及内蒙古等地的秀体溞共有6种,即:短尾秀体溞[D.brachyurum(Liévin)],长肢秀体溞
Resumo:
In this study, an IL-8 homologue has been cloned and identified from a reptile, Chinese soft-shelled turtle for the first time. The full-length cDNA of turtle IL-8 was 1188 bp and contained a 312 bp open reading frame (ORF) coding for a protein of 104 amino acids. The chemokine CXC domain, which contained Glu-Leu-Arg (ELR) motif and four cysteine residues, was well conserved in turtle IL-8. The 4924 bp genomic DNA of turtle IL-8 contained four exons and three introns. Phylogenetic analysis showed that the amino acid sequence of turtle IL-8 clustered together with birds. RT-PCR analysis showed that turtle IL-8 mRNA was constitutively expressed liver, spleen, kidney, heart, blood and intestine tissues of control turtles. Real-time quantitative PCR analysis further indicated that the turtle IL-8 mRNA expression was apparent in various tissues at 8 h and up-regulated significantly during 8 h-7 d after Aeromonas hydrophila infection. The present studies will help us to understand the evolution of IL-8 molecule and the inflammatory response mechanism in reptiles. (C) 2009 Elsevier Ltd. All rights reserved.
Resumo:
Scytonema javanicum (Kutz.) Born et Flah (cyanobacterium) is one of the species distributed widely in the crust of desert soils regularly subjected to severe water stress. To investigate the response of the species to salt stress, many physiological and biochemical parameters, including growth rate, ratio of variable fluorescence to maximum fluorescence (Fv/Fm), reactive oxidative species (ROS), malondialdehyde (MDA), catalase (CAT), and superoxide dismutase (SOD), were determined in culture. The results showed that 50 mM NaCl inhibited growth and Fv/Fm in the medium BG-110, and that the inhibition was maximum after 1-2 days' exposure to salt stress; 50 mM NaCl also increased the contents of ROS and MDA in treated cells, which suggests that salt stress may lead to oxidative damage and lipid peroxidation in the alga. Further, changes in the antioxidative enzymes SOD and CAT in the treated alga were consistent with changes in ROS and MDA at certain extent. These observations suggest that oxidative stress resulting from salt stress in S. javanicum could result in the production of antioxidative enzymes to counteract the oxidative damage, and the enzymes may contribute to the ability of S. javanicum to survive the adverse desert environment. (c) 2007 Elsevier Ltd. All rights reserved.
Resumo:
A polarization-insensitive semiconductor optical amplifier (SOA) with a very thin active tensile-strained InGaAs bulk has been fabricated. The polarization sensitivity of the amplifier gain is less than 1 dB over both the entire range of driving current and the 3 dB optical bandwidth of more than 80 nm. For optical signals of 1550 nm wavelength, the SOA exhibits a high saturation output power +7.6 dBm together with a low noise figure of 7.5 dB, fibre-to-fibre gain of 11.5 dB, and low polarization sensitivity of 0.5 dB. Additionally, at the gain peak 1520 nm, the fibre-to-fibre gain is measured to be 14.1 dB.
Resumo:
Six-stacked InAs/In0.52Al0.48As self-assembled quantum wires (QWRs) on InP(001) by molecular-beam epitaxy (MBE) have been studied by high-resolution transmission electron microscopy (HRTEM) and polarized PL measurements. We obtained the chemical lattice fringe (CLF) image of InAs self-assembled QWRs embedded in the In0.52Al0.48As matrix by the interference between the (002)-diffracted beam and the transmitted beam in the image plane of the objective lens. The results show that the InAs QWRs were bounded by (113), (001) and (114) facets. Both the size and strain distribution in QWRs were determined. It was found that with the growth of successive periods, the height and height fluctuation of InAs QWRs decreased from the bottom period to the upper one. Some suggestions are put forward for further improving the uniformity of the stacked InAs QWRs. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (alpha-SiOx,:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O-3. The Raman scattering; results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.
Resumo:
Epitaxial wurtzite InN thin films have been grown by metal-organic chemical vapor deposition on (1 1 1) SrTiO3 (STO) substrates. Interestingly, twin domain epitaxy induced by the surface reconstruction of STO is observed with the in-plane orientation relationships of [(1) over bar 1 0 0]InN parallel to [<(1)over bar > 1 0]STO and [2 <(1 1)over bar > 0]InN parallel to[<(1)over bar > 1 0]STO, which is helpful to release the strain. The InN films on STO substrates exhibit a strong photoluminescence emission around 0.78 eV. Particularly, using STO substrates opens up a possibility to integrate InN with the functional oxides. (C) 2009 Elsevier B.V. All rights reserved
Resumo:
ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.
Resumo:
Pen-based user interface has become a hot research field in recent years. Pen gesture plays an important role in Pen-based user interfaces. But it’s difficult for UI designers to design, and for users to learn and use. In this purpose, we performed a research on user-centered design and recognition pen gestures. We performed a survey of 100 pen gestures in twelve famous pen-bases systems to find problems of pen gestures currently used. And we conducted a questionnaire to evaluate the matching degree between commands and pen gestures to discover the characteristics that a good pen gestures should have. Then cognition theories were applied to analyze the advantages of those characteristics in helping improving the learnability of pen gestures. From these, we analyzed the pen gesture recognition effect and presented some improvements on features selection in recognition algorithm of pen gestures. Finally we used a couple of psychology experiments to evaluate twelve pen gestures designed based on the research. It shows those gestures is better for user to learn and use. Research results of this paper can be used for designer as a primary principle to design pen gestures in pen-based systems.