基于TM模激射的圆柱形结构的微盘激光器

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Comparison of Q-factors between TE and TM modes in 3-D microsquares by FDTD simulation

Mode characteristics of three-dimensional (3-D) microsquare resonators are investigated by finite-difference time-domain (FDTD) simulation for the transverse electric (TE)-like and the transverse magnetic (TM)-like modes. For a pillar microsquare with a side length of 2 pin in air, we have Q-factors about 5 X. 103 for TM-like modes at the wavelength of 1550 run, which are one order larger than those of TE-like modes, as vertical refractive index distribution is 3.17/3.4/3.17 and the cororresponding center layer thickness is 0.2 mu m. The mode field patterns show that TM-like modes have much weaker vertical radiation coupling loss than TE-like modes. TM-like modes can have high Q-factors in a microsquare with weak vertical field confinement.

Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation (vol 35, pg 353, 2004)

　

An improved TM method for full two-port calibration of the asymmetric test fixtures

Three known standards, including at least one transmission standard, are normally required for the full two-port calibration of test fixtures. Based on the triple-through method, a new general-purpose calibration procedure using only one known reflection standard is proposed in this paper. The experimental results show that our method call provide a simple and accurate approach to fall two-port calibration of the asymmetric test fixtures. (c) 2005 Wiley Periodicals, Inc.

High-Q TM whispering-gallery modes in three-dimensional microcylinders

We present a generation condition for realizing high-Q TM whispering-gallery modes (WGMs) in semiconductor microcylinders. For microcylinders with symmetry or weak asymmetry vertical waveguiding, we show that TM WGMs can have a high Q factor, with the magnitude of 10(4) at the radius of the microcylinder of 1 mu m, by three-dimensional numerical simulation. The Q factor of TE WGMs is much less than that of TM WGMs in the semiconductor microcylinders due to a vertical radiation loss caused by mode coupling with the vertical propagating mode. The results open up a possible application of TM WGMs in semiconductor microcylinders for efficient current injection microlasers and single photon sources.

A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy

A self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 mum at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)(1)/GaAs)(1)monolayer deposition method. The photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrown on the top of islands. The mound-like morphology of the islands elongated along the [1 (1) over bar0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1 (1) over bar0] direction. Our results present important information for the fabrication of 1.3 mum wavelength quantum dot devices.

1.35 mu m photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)(1)/(GaAs)(1) monolayer deposition

1.35 mum photoluminescence (PL) with a narrow linewidth of only 19.2 meV at room temperature has been achieved in In0.5Ga0.5As islands structure grown on GaAs (1 0 0) substrate by solid-source molecular beam epitaxy. Atomic force microscopy (AFM) measurement reveals that the 16-ML-thick In0.5Ga0.5As islands show quite uniform InGaAs mounds morphology along the [ 1(1) over bar 0] direction with a periodicity of about 90 nm in the [1 1 0] direction. Compared with the In0.5Ga0.5As alloy quantum well (QW) of the same width, the In0.5Ga0.5As islands structure always shows a lower PL peak energy and narrower full-width at half-maximum (FWHM), also a stronger PL intensity at low excitation power and more efficient confinement of the carriers. Our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (C) 2000 Elsevier Science B.V. All rights reserved.

High Q-factor TM modes in three-dimensional semiconductor microresonators

We have investigated the mode characteristics for three-dimensional (3D) semiconductor microresonators by finite-difference time-domain (FDTD) technique. The results show that the quality-factors (Q-factors) of TM-like modes are much larger than those of TE-like modes as the vertical waveguidng formed by semiconductor materials.

Prediction of simultaneously large and opposite generalized Goos-Hanchen shifts for TE and TM light beams in an asymmetric double-prism configuration

It is predicted that large and opposite generalized Goos-Hanchen (GGH) shifts may occur simultaneously for TE and TM light beams upon reflection from an asymmetric double-prism configuration when the angle of incidence is below but near the critical angle for total reflection, which may lead to interesting applications in optical devices and integrated optics. Numerical simulations show that the magnitude of the GGH shift can be of the order of beam's width.

退耕还林(草)和降雨变化对延河流域土壤侵蚀的影响

通过定量评估退耕还林(草)和降雨变化对延河流域土壤侵蚀的影响,为延河流域水土保持效益评价、流失治理和环境建设提供决策参考。【方法】利用延河流域日降雨、数字高程模型、土壤类型图、土地利用图和植被覆盖图,运用RUSLE模型,在ArcGIS平台的支持下计算流域1997年和2000年土壤侵蚀量,并分别模拟了退耕还林(草)和气候变化对土壤侵蚀的影响。【结果】由于降雨的变化,研究区年降雨侵蚀力均值由1997年的775.32MJ·mm·hm-2·h-1·a-1增加到了2000年的1292.07MJ·mm·hm-2·h-1·a-1,降雨大大加剧了流域土壤侵蚀;由于退耕还林(草)政策的实施,坡耕地面积大大减少,林草面积增加,植被覆盖和管理因子值显著减少,由退耕还林(草)前的0.1714下降到了退耕还林(草)后0.1592,减小了流域土壤侵蚀;由于退耕还林(草)的实施、气候变化以及水土保持工程措施和耕作措施变化共同影响,单位面积平均土壤侵蚀量由退耕还林(草)前的3012t·km-2·a-1增加到了退耕还林(草)后4671t·km-2·a-1,年土壤侵蚀总量2314×104t增加到了3589×104t。【结论】降雨变化使得...

带侧羧基的脂肪族生物降解聚合物

生物降解脂肪族聚酷如聚乙交醋（PGA）、聚丙交醋（PLA）、聚。一己内酷（PCL）以及它们的共聚物由于具有良好的生物相容性和生物降解性而在外科手术缝合线、组织工程、药物控制释放、骨固定等领域得到很多应用。但是，它们自身缺乏功能基团，亲水性差，因而在应用上受到很大限制。因此，含有功能侧基生物降解聚合物的制备在过去十年中受到大家极大的关注。功能基团的引入对于调节聚合物的性能如：亲水性、生物降解性和药物的渗透性等非常重要。需要特别指出的是，功能基团的引入为把药物和其它生物活性物质与聚合物结合进而扩大聚合物的应用范围提供了机会。本文合成了几个功能化单体并且通过共聚的方法制备了几种新型的两亲性功能化聚合物。这些改性后的聚合物可以通过化学键接上药物或者其它生物活性物质，有望作为靶向控释药物载体和智能化的组织工程支架材料。具体的研究结果如下：1．以2，2-二羟甲基丙酸节酷为功能单体，通过两步法成功合成了一系列新的带功能基团的聚酷酞胺，并通过1H NMR和FTIR对聚合物的化学结构进行了表征，DSC结果表明所合成的聚酯酰胺的Tm和Tg分别在150℃和0℃左右；2．合成了功能化的环状单体（35）-3-［（苄氧羰基）乙基」吗啉-2，5-二酮（BEMD），并以PEG作为引发剂，Sn（Oct）2作为催化剂，通过L一LA和BEMD的开环共聚合得到共聚物PLGBG-PEG-PLGBG；随后用10％铭碳催化氢化得到带有侧梭基的两亲性嵌段共聚物PLGG-PEG-PLGG和其它两亲性嵌段共聚物一样，PLGG-PEG-PLGG在水溶液中能够自组装成胶束，用花作为荧光探针，通过荧光光谱法研究了其形成胶束的过程并测定了它们的临界胶束浓度，发现在总的分子量大致相当的情况下，PLGG-PEG4600-PLGG比PLGG-PEG2000-PLGG有较高的临界胶束浓度；场发射电子显微镜表征结果显示胶束具有均一的球形特征，动态光散射结果表明该胶束具有较窄的单峰粒径分布；蛋白酶K溶液中的降解研究表明带有侧梭基的PLGG-PEG-PLGG比PLA具有更快的降解速率；人胚关节软骨细胞培养结果表明所合成的聚合物PLGG-PEG-PLGG显示出较好的细胞相容性。3．在缩合剂DCC和催化剂DMAP存在下，带有侧梭基的两亲性嵌段共聚物PLGOPEG-PLGG和紫杉醇发生缩合反应得到两亲性嵌段共聚物一紫杉醇键合药P（LGG-paclitaxel）-PEG-P（LGG-paclitaxel）。它具有两亲性嵌段共聚物的性质，能够自组装成胶束，场发射电子显微镜表征结果表明胶束具有均一的球形特征，动态光散射结果表明该胶束具有较窄的粒径分布，平均粒径为119.4nm。该胶束的药物释放具有pH敏感性，酸性环境中比生理环境中（pH＝7.4）具有较快的释放速率。P（LGG-Paclitaxel）-PEG-P（LGG-paclitaxel）胶束的壳层由良好亲水性的PEG组成，避免了胶束纳米粒子在血液循环中被人体网状内皮系统吞噬，保证有充足的时间通过EPR效应在肿瘤部位聚集，进而通过细胞内吞进入细胞并在细胞内的酸性环境中释放药物，进一步的研究工作有待深入进行。4．合成了功能化的环状碳酸酷单体MBC，以MPEG作为引发剂，ZnEt2作为催化剂，LLA和MBC发生开环共聚合，以较高的转化率，得到高分子量共聚物MPEG-b-P（LA-co-MBC）。13C NMR表明LLA和确c发生了无规共聚合；DSC征结果表明MPEG-b-P（LA-co-MBC）为无定型态聚合物，Tg在20-50℃之间，随着MBc含量的增加而降低；MPEG-b-P（LA-co-MBC）脱保护后得到带侧梭基的MPEG-b-P（LA-co-MCC），它的Tg明显提高，可能是聚合物侧梭基之间强的氢键作用力以及梭基对水解反应的催化作用造成的；脱保护前后的共聚物在蛋白酶K溶液中的降解研究表明，MPEG-b-P（LA-co-MCC）的降解速率大于MPEG-b-P（LA-co-MBC）的降解速率；人胚关节软骨细胞培养结果表明，所合成的MPEG-b-P（LA-co-MCC）是一种具有良好生物相容性的新型生物降解材料。5．利用本实验室开发的一种新型有机氨锯引发剂Sr-PO在温和的条件下通过顺序加料聚合的方法合成了新的嵌段共聚物PCL-b-PMBC。WAXD结果表明 PCL-b-PMBc中PCL的衍射峰均可观察到，只是衍射峰的强度随着PMBC含量的增加而减弱。DSC结果表明PCL-b-PMBC中PCL的Tm在57到52℃之间，并且随着PMBC含量的增加而降低。PCL-b-PMBC的玻璃化转变在-41.6 到-23.3℃之间，随着PMBC含量的增加而增加，这表明PMBC和PCL之间 有着强的相互作用，尽管两段不是完全相容的。PCL-b-PMBC的侧节醋在10％把碳催化下氢化还原为带侧梭基的PCL-b-PMCC后，衍射峰和结晶焙大大降低，说明侧梭基的存在使得分子链间有着强的氢键相互作用而不利于结晶。由以上分析可知，PCL-b-PMCC侧梭基的存在将会使共聚物的降解速度大大提高，而且因为功能梭基的存在可以使共聚物通过化学键连接上药物、短肤、寡糖或者其它生物活性物质，从而扩大该聚合物在生物医学领域的应用范围。

M_2RSbO_6:R~(3+)复合氧化物的合成组成结构和性能的研究(M = Ba、Sr、Ca, R = La、Gd、Y、Bi, R' = Sm、Eu、Dy、Ho、Er、Tm)

对于稀土与非稀土所组成的二元复合氧化物的研究国外已有较多的报导。但是，对于稀土和锑的复合氧化物只是近年来才开始有些研究工作。含锑与稀土的多元复合氧化物的报导就更少。本文在我们实验室张静筠等人三元复合氧化物研究的基础上，开展Mo—Sb_2O_5—R_2O_3—R'_2O_3—Bi_2O_3多元体系的研究工作，这对于我国丰产元素稀土和锑的应用以及利用Bi~(3+)的激活与敏化将是有益的。本文按Thornton等人的方法合成了Ba_2BiSbO_6，Ba_2GdSbO_6，按EγΦECEHKO等人的方法合成了M_2RSbO_6 (M = Ba、Sr、Ca, R = La Y)。并以M_2RSbO_6为基质，掺Sm~(3+)、Eu~(3+)、Dy~(3+)、Ho~(3+)、Er~(3+)、Tm~(3+)和Bi~(3+)，研究它们的化学组成，晶体结构与发光性能的关系及规律，Bi~(3+)的荧光和敏作用。同时研究了它们的磁学和热学性能。化学组成的分析结果表明，计算的含量与实验测得的含量符合较好，说明化学反应是按化学计量比进行的。通过X-射线粉沫物相分析和晶胞参数的理论计算确定M_2RSbO_6(M = Ba、Sr、R = La、Y、Gd、Bi)复合氧化物是属于立方钙钛太型化合物。空间群为Fm3m，点群为Oh。用计算机计算了Ca_2YSbO_6的晶胞参数并结合荧光光谱分析确定它属于畸变的单斜钙钛矿，空间群为P_(21)。用磁天平测量了样品M_2RSbO_6 (M = Ba、Sr、Ca; R = Gd、Y、Bi)的磁化率。除Ba_2GdSbO_6是顺磁性物质外共余的都是反磁性的物质。按所用原料Sb_2O_5计算的磁化率与测量值符合较好，表明在所研究的M_2RSbO_6化合物中锑是正五价的。用热重热差分析仪测量了样品在反应中的热性能，观察到在化合物形成的过程中所用原料Sb_2O_3大约在520 ℃左右氧化变为Sb_2O_5。除所用原料碳酸盐分解外没有挥发性的物质，这就进一步证明化学组成分析和磁化率测量的结果是正确的。光学测量的结果表明，所有的磷光体随着激活离子浓度的不同其光谱都发生规律性的变化。对于不同Eu~(3+)浓度的Ba_2YSbO_6:Eu~(3+)和Br_2YSbO_6:Eu~(3+), Bi~(3+)体系用254nm激发时均能观察到Eu~(3+)于595nm的尖峰发射。用基质和Bi~(3+)的激发峰325nm激发时，明显地看到敏化剂Bi~(3+)到Eu~(3+)的能量传递，使Eu~(3+)于595nm的发射大大增强，我们认为Bi~(3+)对Eu~(3+)的敏化作用是由于基质和Bi~(3+)的~1S。→ 3P_1的跃迁吸收了激发的能量，然后无辐射弛豫到Eu~(3+)的激发态~5D_0，产生~5D_0 → 7F_1的磁偶极跃迁。对于不同Eu~(3+)浓度的Sr_2YSbO_6:Eu~(3+)和Sr_2YSbO_6:Eu~(3+), Bi~(3+)体系用245nm激发时均能观察到Eu~(3+)于595nm的尖峰发射。用基质和Bi~(3+)的激发峰335nm激发时，观察到基质和Bi~(3+)对Eu~(3+)具有某种能量传递。敏化作用机理与上述的Ba_2YSbO_6:Eu~(3+)和Ba_2YSbO_6:Eu~(3+), Bi~(3+)体系相同。对于不同Eu~(3+)浓度的Ca_2YSbO_6:Eu~(3+)和Ca_2YSbO_6:Eu~(3+), Bi~(3+)体系用396nm激发时，均能观察到Eu~(3+)于613nm很强的尖峰发射。用基质和Bi~(3+)的激发峰313nm激发时，见到Bi~(3+)和基质对Eu~(3+)具有某种能量传递，这种敏化作用主要是由于基质和Bi~(3+)的3P_1 → ~1S_0的400nm的宽带发射和Eu~(3+)的~7F_0 → ~5L_6的396nm的吸收相匹配产生~5L_6→~5D_0→~7F_2的跃迁。通过对激发光谱和荧光光谱的分析给出了Ca_2Y_(0.96)Eu_(0.04)SbO_6的能级图，从实验上可见，Eu~(3+)的发光强烈地依赖于钙钛矿的结构，当Eu~(3+)在空间群为Fm3m 的Ba_2YSbO_6和Sr_2YSbO_6中处于Oh点对称性时，主要是~5D_0 → ~7F_1的磁偶极跃迁。当Eu~(3+)在空间群为P_(21)的单斜钙钛矿中时，主要是~5D_0 → ~7F_2的电偶极跃迁。对于不同掺杂浓度M_2YSbO_6:R~(13+)(M = Ba、Ca; R' = Sm、Dy、Ho、Er、Tm)体系，通过激发和荧光光谱的研究，合理地确定了谱项。发现基质对Sm~(3+)、Dy~(3+)、Ho~(3+)具有敏化作用。对不同Bi~(3+)浓度的Ca_2YSbO_6:Bi~(3+)，由激发和荧光光谱可见Bi~(3+)具有二个激发带，第一激发带位于240nm处相当于~1S_0 → ~1P_1的跃迁，第二激发带位于315nm处相当于~1S_0 → ~3P_1的跃迁。有一个很强的兰紫色发射位于400nm处相当于~3P_1 →~1S_0的跃迁。