Formation trends of ordered self-assembled nanoislands on stepped substrates

The growth of ordered self-assembled nanoislands on stepped substrates is studied systematically by kinetic Monte Carlo simulations. As the terrace width is small, the formation of nanoislands is confined in the steps and nanoislands ordered in lines or nanowires can be obtained. The Schwoebel barrier at the step edges has a great influence on the evolution of both the size and space distributions of the islands. When the terrace width is relatively large, self-ordering of nanoislands in the center regions of the terraces happens. An unexpected trend of the nanoisland self-ordering is found as the deposition thickness is larger than 0.2 ML, which can be related to the attractive migrations between nearby islands.

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure

Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters

Intersubband absorption energy shifts in 3-level system stemming from depolarization and excitonlike effects are investigated. Analytically, the expressions we derive present good explanations to the conventional 2-level results and bare potential transition energy results; and numerical results show that they are more exact than the previous studies to describe the 3-level system depolarization and excitonlike shift (DES) character especially for higher carrier density (more than 8 x 10(11) cm(-2)). One interesting detail we find is that the "large blue" DES becomes "slight redshift" in the low doping limit (less than 1.9 x 10(11) cm(-2)), which may be neglected by the previous studies of intersubband transitions. Temperature character of DES in the step well structure is also numerically studied. Finally the above are applied to calculate asymmetric step quantum well structures. The two main functional aspects of terahertz (THz) emitters are discussed and several basic optimizing conditions are considered. By adjusting the well geometry parameters and material composition systematically, some optimized structures which satisfy all of the six conditions are recommended in tables. These optimizations may provide useful references to the design of 3-level-based optically pumping THz emitters.

Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode

辽东次生林土壤呼吸及主要组分分离与量化

土壤呼吸是森林生态系统碳循环的重要组成部分，对土壤呼吸的主要组分根系呼吸和土壤微生物呼吸进行分离并量化，对于了解土壤碳释放规律、估算生态系统土壤碳的年际通量以及预测气候变化条件下根系或土壤微生物对土壤碳释放格局的影响具有重要意义。本文采用挖壕法测定辽东山区蒙古栎林、杂木林和胡桃楸林的土壤表面CO2通量，并同步分析土壤水热因子及土壤有机质、N含量、根系生物量、土壤酶活性、土壤微生物生物量等。研究结果表明：（1）辽东山区次生林0-10cm土壤有机质含量为9.29-18.15%，全氮含量为0.43-0.90%，pH值为5.67-6.19；次生林生长季细根生物量平均为152.61- 447.79 g/m2，粗根生物量平均为255.42-507.42 g/m2，根系总量平均为540.93-955.22 g/m2；土壤酶活性季节变化明显，且具垂直分布特征，蒙古栎林的土壤转化酶、淀粉酶和脱氢酶活性最高，胡桃楸林最低，胡桃楸林过氧化氢酶活性相对最大；土壤微生物量碳、氮的季节变化呈明显的单峰曲线并与土壤温度相关，土壤微生物量碳氮之间具显著相关性（P<0.05）。（2）次生林土壤总呼吸、根呼吸和土壤微生物呼吸具明显的日、季变化规律，生长季根呼吸贡献相对较低，胡桃楸林根呼吸贡献率为34.0-34.8%，蒙古栎林为17.9-28.4%，杂木林为14.7-35.3%；土壤微生物呼吸贡献率为66.0-85.3%，高于根呼吸贡献率，说明辽东山区次生林土壤微生物呼吸决定土壤总呼吸的变化趋势。（3）土壤呼吸与地下5cm土壤温度呈指数函数关系，土壤总呼吸的Q10值为1.29-2.30，微生物呼吸的Q10值为1.28-2.09，根呼吸的Q10值为1.29-3.72；土壤总呼吸、微生物呼吸、根呼吸与土壤含水量均无明显相关关系；蒙古栎林根呼吸与细根生物量显著相关，杂木林根呼吸与粗根生物量及根系总生物量显著相关，胡桃楸林根呼吸与根系生物量总量显著相关（P<0.05）；微生物呼吸与淀粉酶、转化酶、脱氢酶、过氧化氢酶均无显著相关性（除胡桃楸林与过氧化氢酶显著相关）；微生物呼吸与土壤微生物量碳、氮均呈显著线性相关关系（P<0.05）。（4）蒙古栎林土壤总呼吸、根呼吸、土壤微生物呼吸年际碳释放量分别为572.78、147.78和425.59 g C m-2a-1，杂木林分别为403.12、108.92、297.51 g C m-2a-1，胡桃楸林分别为519.47、173.75、345.72 g C m-2a-1；生长季和非生长季通过根呼吸释放的碳量均小于分解土壤有机质的微生物呼吸释放的碳量，非生长季次生林土壤碳释放量为39.21-152.04 g C m-2a-1，占全年呼吸总量的10-29%，说明冬季土壤碳释放量不能忽略。