Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy

A systematic study of self-organized In0.5Ga0.5As quantum dots (QDs) and islands grown by molecular beam epitaxy on (100) and (n11) A/B GaAs substrates is given, where n varies from 1 to 5. Low-temperature photoluminescence results show that the properties of the dots have a strong dependence on the substrate orientation as revealed by atomic force microscopy, consistent with the differences in size, shape, and distribution of QDs on different substrates. From (100) to (111) surface, the photoluminescence peak position of dots on B surfaces is found to blueshift more than that on A surfaces. QDs are also formed on (511) A surface. The positional distribution of these dots exhibits a wavy shape, which is related to the corrugated structure of this surface. Two kinds of islands are formed on (111) A surface, but further work is needed to explain the mechanism of these islands. (C) 2001 American Vacuum Society.

Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy

The structural characteristics of gallium nitride (GaN) films grown on sapphire(0001) substrates by gas source molecular beam epitaxy (GSMBE) have been investigated using high-resolution synchrotron irradiation X-ray diffraction and cathodoluminescence with a variable energy electron beam. Besides the well-known GaN hexagonal structure, a small portion of cubic phase GaN was observed. The X-ray measurements provide an essential means for the structural identification of the GaN layers. Arising from the variable penetration depth of the electron beam in the cathodoluminescence measurements, it was found that the fraction of the GaN cubic-phase typically increased as the probing depth was increased. The results suggest that the GaN cubic phase is mostly located near the interface between the substrate and GaN layer due to the initial nucleation.

Transverse trapping forces of focused Gaussian beam on ellipsoidal particles

A modified T-matrix method is presented to compute the scattered fields of various realistically shaped particles; then the radiation forces on the particles can be calculated via the Maxwell stress tenser integral. Numerical results of transverse trapping efficiencies of a focused Gaussian beam on ellipsoidal and spherical particles with the same volume are compared, which show that the shape and orientation of particles affect the maximal transverse trapping force and the displacement corresponding to the maximum. The effect of the polarization direction of the incident beam on the transverse trapping forces is also revealed. (c) 2007 Optical Society of America.

Trapping of low-refractive-index particles with azimuthally polarized beam

Azimuthally polarized beams, focused by a high-numerical-aperture (NA) objective lens, form a hollow intensity distribution near the focus, which is appropriate for trapping low-refractive-index particles, in contrast to common linearly polarized or radially polarized beams. In this paper, the field distribution of the azimuthally polarized beam focused by a high-NA objective is described by the vectorial diffraction integral, and then the radiation forces on spherical particles with different parameters such as radius and refractive index are calculated by the T-matrix method. Numerical results show that the azimuthally polarized beam not only can steadily trap low-refractive-index particles at the focus center but also can trap multiple high-refractive-index particles around the focus center by virtue of the hollow-ring configuration. The range of the sizes of low-refractive-index particles that can be trapped steadily are presented, corresponding to different parameters such as the NA of the objective and the relative refractive index, based on which the NA of the objective can be selected to trap the appropriate size of particles. (C) 2009 Optical Society of America

IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES

GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25-mu-m on Si have been implanted with Si ions at 1.2 MeV to dose of 1 x 10(15)/cm2. A rapid infrared thermal annealing and white light annealing were then used for recrystallization. Crystalline quality was analysed by using backscattering channeling technique with Li ion beam of 4.2 MeV. The experimental results show that energy selection is important for obtaining better and uniform recrystallized GaAs epilayers.

Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy

We have studied the growth of GaInNAs/GaAs quantum well (QW) by molecular beam epitaxy using a DC plasma as the N sourer. The N concentration was independent of the As pressure and the In concentration, but inversely proportional to the growth rate. It was almost independent of T, over the range of 400-500 degreesC, but dropped rapidly when T-g exceeded 500 degreesC. Thermally-activated N surface segregation is considered to account for the strong falloff of the N concentration. As increasing N concentration, the steep absorption edge of the photovoltage spectra of GaInNAs/GaAs QW became gentle, the full-width at half-maximum of the photoluminescence (PL) peal; increased rapidly, and a so-called S-shaped temperature dependence of PL peak energy showed up. All these were attributed to the increasing localized state as N concentration. Ion-induced damage was one of the origins of the localized state. A rapid thermal annealing procedure could effectively remote the localized state. (C) 2001 Elsevier Science D.V. All rights reserved.

Design of slow extraction system for therapy synchrotron

Based on the optimized design of the lattice for therapy synchrotron and considering the requirement of radiation therapy, the third order resonant extraction is adopted. Using the momentum-amplitude selection method, the extraction system is designed and optimized. An extraction efficiency of more than 97% and a momentum spread less than 0.11% are obtained.

Comparison doses of secondary neutron with the heavy ions in a 75-mev/n heavy ion beam

国科图

Pre-irradiation with low-dose C-12(6+) beam significantly enhances the efficacy of AdCMV-p53 gene therapy in human non-small lung cancer

The combination of ionizing radiation and gene therapy has been investigated. However, there are very few reports about the combination of heavy-ion irradiation and gene therapy. To determine if the pre-exposure to low-dose heavy ion beam enhances the suppression of AdCMV-p53 on non-small lung cancer (NSLC), the cells pre-irradiated or non-irradiated were infected with 20, 40 MOI of AdCMV-p53. Survival fraction and the relative biology effect (RBE) were determined by clonogenic assay. The results showed that the proportions of p53 positive cells in C-12(6+) beam induced AdCMV-p53 infected cells were more than 90%, which were significantly more than those in gamma-ray induced AdCMV-p53 infected cells. The pre-exposure to low-dose 12C6+ beam significantly prevented the G(0)/G(1) arrest and activated G(2)/M checkpoints. The pre-exposure to C-12(6+) beam significantly improved cell to apoptosis. RBEs for the C-12(6+)+ AdCMV-p53 infection groups were 30%-60%,20% -130% and 30%-70% more than those for the C-12(6+)_irradiated only, AdCMV-p53 infected only, and gamma-irradiation induced AdCMVp53 infected groups, respectively. The data suggested that the pre-exposure to low-dose C-12(6+) beam significantly promotes exogenous p53 expression in NSLC, and the suppression of AdCMV-p53 gene therapy on NSLC.

Adenovirus-mediated p53 gene transfer sensitizes hepatocellular carcinoma cells to heavy-ion radiation

Background. The purpose of this study was to investigate whether adenovirus-mediated p53 transfer could sensitize hepatocellular carcinoma to heavy-ion irradiation. Methods. HepG2 cells were preexposed to a C-12(6+) beam, and then infected with replication-deficient adenovirus recombinant vectors containing human wild-type p53 (AdCMV-p53) (C-12(6+) irradiation + AdCMV-p53 infection). The survival fraction was determined by clonogenic assay. The cell cycle, cell apoptosis, and p53 expression were monitored by flow cytometric analysis. Results. p53 expression in C-12(6+) irradiation + AdCMV-p53 infection groups was markedly higher than that in C-12(6+) irradiation only groups (P < 0.05), suggesting that the preexposure to the C-12(6+) beam promoted the expression of exogenous p53 in HepG2 cells infected with AdCMV-p53 only. The G(1)-phase arrest and cell apoptosis in the C-12(6+) irradiation + AdCMV-p53 infection groups were significantly more than those in the C-12(6+) irradiated groups (P < 0.05). The survival fractions of the C-12(6+) irradiation + AdCMV-p53 infection groups decreased by 30%-49% compared with those of the C-12(6+) beam-irradiated only groups (P < 0.05). Conclusions. Adenovirus-mediated p53 gene transfer can promote G(1)-phase arrest and cell apoptosis, thus sensitizing hepatocellular carcinoma cells to heavy-ion irradiation.

High-efficiency transfer and expression of AdCMV-p53 in human hepatocellular carcinoma cells induced by low-dose carbon-ion radiation

Objective To investigate whether the irradiation with C-beam could enhance adenovirus-mediated transfer and expression of p53 in human hepatocellular carcinoma. Materials and methods HepG2 cells were exposed to C-beam or gamma-ray and then infected with replicationdeficient adenovirus recombinant vectors containing human wild-type p53 or green fluorescent protein, respectively. The transfer efficiency and expression level of the exogenous gene were detected by flow cytometric analysis. Cell survival fraction was detected by clonogenic assay. Results The transfer frequency in C-beam or gamma-irradiated groups increased by 50-83% and 5.7-38.0% compared with the control, respectively (P < 0.05). Compared with C-beam alone, p53 alone, and gamma-ray with p53, the percentages of p53 positive cells for 1 Gy C-beam with p53 increased by 56.0-72.0%, 63.5-82.0%, and 31.3-72.5% on first and third day after the treatments, respectively (P < 0.05). The survival fractions for the 2Gy C-bearn and AdCMV-p53 infection groups decreased to similar to 2%. Conclusion C-beam irradiation could significantly promote AdCMV-green fluorescent protein transfer and expression of p53.

Thermo- and pH-sensitive poly(vinylmethyl ether)/carboxymethylchitosan hydrogels crosslinked using electron beam irradiation or using glutaraldehyde as a crosslinker

BACKGROUND: Stimuli-sensitive or intelligent hydrogels have been investigated for many biomedical and pharmaceutical applications. Those hydrogels with dual sensitivity will have more extensive potential applications. The aim of the work presented was to prepare a series of thermo- and pH-sensitive hydrogels based on poly(vinylmethyl ether) (PVME) and carboxymethylchitosan (CMCS). The hydrogels were crosslinked using electron beam irradiation (EB) or using glutaraldehyde (GA) as a crosslinker at room temperature.

Tm3+ and/or Dy3+ doped LaOCl nanocrystalline phosphors for field emission displays

Blue, yellow and white light emissive LaOCl:Tm3+, LaOCl:Dy3+ and LaOCl: Tm3+, Dy3+ nanocrystalline phosphors were synthesized through the Pechini-type sol-gel process. X-Ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL) and cathodoluminescence (CL) spectra were used to characterize the samples. Under UV radiation (229 nm) and low-voltage electron beam (0.5-5 kV) excitation, the Tm3+-doped LaOCl phosphor shows a very strong blue emission corresponding to the characteristic transitions of Tm3+ (D-1(2), (1)G(4) -> F-3(4), H-3(6)) with the strongest emission at 458 nm. The cathodoluminescent color of LaOCl:Tm3+ is blue to the naked eye with CIE coordinates of x = 0.1492, y = 0.0684. This phosphor has better CIE coordinates and higher emission intensity than the commercial product Y2SiO5:Ce3+.