185 resultados para tungsten dopant
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In order to further investigate nanoindentation data of film-substrate systems and to learn more about the mechanical properties of nanometer film-substrate systems, two kinds of films on different substrate systems have been tested with a systematic variation in film thickness and substrate characteristics. The two kinds of films are aluminum and tungsten, which have been sputtered on to glass and silicon substrates, respectively. Indentation experiments were performed with a Nano Indent XP II with indenter displacements typically about two times the nominal film thicknesses. The resulting data are analyzed in terms of load-displacement curves and various comparative parameters, such as hardness, Young's modulus, unloading stiffness and elastic recovery. Hardness and Young's modulus are investigated when the substrate effects are considered. The results show how the composite hardness and Young's modulus are different for different substrates, different films and different film thicknesses. An assumption of constant Young's modulus is used for the film-substrate system, in which the film and substrate have similar Young's moduli. Composite hardness obtained by the Joslin and Oliver method is compared with the directly measured hardness obtained by the Oliver and Pharr method.
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We present in this paper the application of B-P constitutive equations in finite element analysis of high velocity impact. The impact process carries out in so quick time that the heat-conducting can be neglected and meanwhile, the functions of temperature in equations need to be replaced by functions of plastic work. The material constants in the revised equations can be determined by comparison of the one-dimensional calculations with the experiments of Hopkinson bar. It can be seen from the comparison of the calculation with the experiment of a tungsten alloy projectile impacting a three-layer plate that the B-P constitutive equations in that the functions of temperature were replaced by the functions of plastic work can be used to analysis of high velocity impact.
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Using dimensional analysis and finite element calculation, we studied spherical indentation in elastic-plastic solids with work hardening. We report two previously unknown relationships between hardness, reduced modulus, indentation depth, indenter radius, and work of indentation. These relationships, together with the relationship between initial unloading stiffness and reduced modulus, provide an energy-based method for determining contact area, reduced modulus, and hardness of materials from instrumented spherical indentation measurements. This method also provides a means for calibrating the effective radius of imperfectly shaped spherical indenters. Finally, the method is applied to the analysis of instrumented spherical indentation experiments on copper, aluminum, tungsten, and fused silica.
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Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied mechanics. Most crystal growth processes involve fluid flows, such as flows in the melt, solution or vapor. Theoretical modeling has played an important role in developing technologies used for growing semiconductor crystals for high performance electronic and optoelectronic devices. The application of devices requires large diameter crystals with a high degree of crystallographic perfection, low defect density and uniform dopant distribution. In this article, the flow models developed in modeling of the crystal growth processes such as Czochralski, ammonothermal and physical vapor transport methods are reviewed. In the Czochralski growth modeling, the flow models for thermocapillary flow, turbulent flow and MHD flow have been developed. In the ammonothermal growth modeling, the buoyancy and porous media flow models have been developed based on a single-domain and continuum approach for the composite fluid-porous layer systems. In the physical vapor transport growth modeling, the Stefan flow model has been proposed based on the flow-kinetics theory for the vapor growth. In addition, perspectives for future studies on crystal growth modeling are proposed. (c) 2008 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.
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The melt flow and temperature distribution in a 200 mm silicon Czochralski furnace with a cusp magnetic field was modeled and simulated by using a finite-volume based FLUTRAPP ( Fluid Flow and Transport Phenomena Program) code. The melt flow in the crucible was focused, which is a result of the competition of buoyancy, the centrifugal forces caused by the rotations of the crucible and crystal, the thermocapillary force on the free surfaces and the Lorentz force induced by the cusp magnetic field. The zonal method for radiative heat transfer was used in the growth chamber, which was confined by the crystal surface, melt surface, crucible, heat shield, and pull chamber. It was found that the cusp magnetic field could strength the dominant counter-rotating swirling flow cell in the crucible and reduce the flow oscillation and the pulling-rate fluctuation. The fluctuation of dopant and oxygen concentration in the growing crystal could thus be smoothed.
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Porous Zr-based bulk metallic glass (PMG) with unidirectional opening pores is prepared by electrochemical etching of tungsten wires of the W/bulk metallic glass (BMG) composites. The porosity and pore size can be controlled by adjusting the tungsten wires. The PMG showed no measurable loss in thermal stability as compared to the monolithic Zr-based BMG by water quenching and is more ductile and softer than the pore-free counterpart. The specific surface area of the PMGs is calculated to be 0.65, 3.96, and 10.54 m(2)/kg for 20, 60, and 80 vol % porosity, respectively. (c) 2007 The Electrochemical Society.
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There are very strong interests in improving the high-temperature wear resistance of the y-TiAl intermetallic alloy, especially when applied as tribological moving components. In this paper, microstructure, high-temperature dry sliding wear at 600 degrees C and isothermal oxidation at 1000 degrees C on ambient air of laser clad gamma/W2C/TiC composite coatings with different constitution of Ni-Cr-W-C precursor mixed powders on TiAl alloy substrates have been investigated. The results show that microstructure of the laser fabricated composite coatings possess non-equilibrium microstructure consisting of the matrix of nickel-base solid solution gamma-NiCrAl and reinforcements of TiC, W2C and M23C6 carbides. Higher wear resistance than the original TiAl alloy is achieved in the composite coatings under high-temperature wear test conditions. However, the oxidation resistance of the laser clad gamma/W2C/TiC composite coatings is deceased. The corresponding mechanisms resulting in the above behaviors of the laser clad composite coatings are discussed. (c) 2006 Elsevier B.V. All rights reserved.
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Floating zone crystal growth in microgravity environment is investigated numerically by a finite element method for semiconductor growth processing, which involves thermocapillary convection, phase change convection, thermal diffusion and solutal diffusion. The configurations of phase change interfaces and distributions of velocity, temperature and concentration fields are analyzed for typical conditions of pulling rates and segregation coefficients. The influence of phase change convection on the distribution of concentration is studied in detail. The results show that the thermocapillary convection plays an important role in mixing up the melt with dopant. The deformations of phase change interfaces by thermal convection-diffusion and pulling rods make larger variation of concentration field in comparison with the case of plane interfaces.
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通过对钨球垂直撞击钢靶的数值仿真,获得了模拟钨球撞击钢板的整个物理图象,并给出了多种人们所关心的侵彻过程和物理场的演化数据,仿真结果与试验数据有较好的一致性。
Resumo:
Czochralski (CZ) crystal growth process is a widely used technique in manufacturing of silicon crystals and other semiconductor materials. The ultimate goal of the IC industry is to have the highest quality substrates, which are free of point defect, impurities and micro defect clusters. The scale up of silicon wafer size from 200 mm to 300 mm requires large crucible size and more heat power. Transport phenomena in crystal growth processes are quite complex due to melt and gas flows that may be oscillatory and/or turbulent, coupled convection and radiation, impurities and dopant distributions, unsteady kinetics of the growth process, melt crystal interface dynamics, free surface and meniscus, stoichiometry in the case of compound materials. A global model has been developed to simulate the temperature distribution and melt flow in an 8-inch system. The present program features the fluid convection, magnetohydrodynamics, and radiation models. A multi-zone method is used to divide the Cz system into different zones, e.g., the melt, the crystal and the hot zone. For calculation of temperature distribution, the whole system inside the stainless chamber is considered. For the convective flow, only the melt is considered. The widely used zonal method divides the surface of the radiation enclosure into a number of zones, which has a uniform distribution of temperature, radiative properties and composition. The integro-differential equations for the radiative heat transfer are solved using the matrix inversion technique. The zonal method for radiative heat transfer is used in the growth chamber, which is confined by crystal surface, melt surface, heat shield, and pull chamber. Free surface and crystal/melt interface are tracked using adaptive grid generation. The competition between the thermocapillary convection induced by non-uniform temperature distributions on the free surface and the forced convection by the rotation of the crystal determines the interface shape, dopant distribution, and striation pattern. The temperature gradients on the free surface are influenced by the effects of the thermocapillary force on the free surface and the rotation of the crystal and the crucible.
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根据双中心带输运模型,对(Ce,Cu)∶LiNbO3晶体双中心非挥发全息记录进行了理论研究与优化。推导了(Ce,Cu)∶LiNbO3晶体的微观参量,采用数值方法通过严格求解模拟双中心带输运方程来模拟全息记录过程。分析了记录过程中,记录与敏化光强、Ce和Cu掺杂浓度以及晶体微观参量对(Ce,Cu)∶LiNbO3晶体双中心全息记录的影响。发现(Ce,Cu)∶LiNbO3晶体非挥发全息记录中实现高衍射效率与固定效率的主导因素是深中心Cu,在记录过程中,深中心Cu建立起了很强的空间电荷场。数值模拟的结果经过实验验
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实验研究了掺杂组份比对LiNbO3:Cu:Ce晶体非挥发全息记录性能的影响。结果表明.在全息记录过程中,掺杂组份比通过改变晶体的紫外光吸收特性而引起全息记录性能的改变。增加LiNbO3:Cu:Ce晶体中Cu和Ce的掺杂组份比会导致晶体对紫外光吸收的增强,进而提高了全息记录灵敏度和固定衍射效率。在弱氧化处理的掺有CuO和Ce2O4的质量分数分别为0.085%和0.011%的LiNbO3:Ce:Cu晶体中.得到了最高的固定衍射效率ηf=32%和记录灵敏度S=0.022cm/J。
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Ce3+ ions were introduced into the Er3+/Yb3+ -codoped TeO2-WO3-ZnO glasses, and the effect of Ce3+ on the emission properties at 1.5 mu m band and the upconversion luminescence of Er3+ in the glasses was investigated. With the increasing of Ce3+ concentration, the emission intensity of Er3+ at 1.5 mu m band increases firstly, and then decreases. The optimal doping concentration of Ce3+ is about 2.07 x 10(20)/cm(3). As for the Er3+ emission at 1.5-mu m band, the fluorescence lifetime decreases a little from 3.4ms to 3.0ms, while the full width at half maximum (FWHM) hardly changes with the increase of Cc 3+ concentration. Due to the effective cross relaxation between Ce3+ and Er3+ : Er3+ (I-4(11/2)) + Ce3+ (F-2(5/2)) -> Er3+ (I-4(13/2)) + Ce3+ (F-2(7/2)), the upconversion emission intensity of Er3+ is reduced greatly. But when Ce3+ -doping concentration is too high, the other cross relaxation between Ce3+ and Er3+ : Er3+ (4I(13/2)) + Ce3+ (F-2(5/2)) -> Er3+ (I-4(15/2)) + Ce3+ (F-2(7/2)) happens, which depopulates the I-4(13/2) level of Er3+ and results in the decrease of the emission intensity and fluorescence lifetime of Er3+ at 1.5 mu m band.
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制备了用于离子交换法制备光波导器件的掺铒碲-钨-钠玻璃基质。应用扎得-奥菲而特(Judd—Ofelt)理论计算了玻璃样品的三个强度参量,由强度参量计算了Er^3+离子的自发跃迁几率、荧光分支比等光谱参量;应用麦克库玻(McCumber)理论,计算了Er^3+离子在1.5μm的受激发射截面,荧光测试发现Er^3+离子的荧光半峰全宽可达65nm。比较了Er^3+离子在不同玻璃基质中的光谱特性。结果表明,Er^3+离子在碲-钨-钠玻璃中具有较高的受激发射截面和较宽的荧光半峰全宽,可以用于宽带光波导器件的制备。
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研制了一种用于宽带波导放大器的掺铒碲钨酸盐激光玻璃材料,对玻璃热稳定性、光谱性质进行了表征,并在其上采用离子交换法制作了平面光波导.掺铒碲钨酸盐玻璃的转变温度Tg和析品开始温度Tx分别为377.1和488.5℃;荧光半高宽为52nm;应用McCumber理论,计算得出Er^3+离子4I13/2→^4I15/2跃迁在峰值波长1532nm的受激发射截面为0.91×10^-20cm^2.不同条件下制作了在632.8nm处多模的平面光波导,通过拟合得到Ag^+离子在300℃的有效扩散系数De为2.82×10^-1