Thermal analysis of ethylene propylene copolymer-grafted-acrylic acid

The thermal properties of ethylene propylene copolymer-grafted-acrylic acid (EP-g-AA) were investigated by using differential scanning calorimetry (DSC). Compared with the ethylene propylene copolymer (EP), the peak values of the melting temperature (T-m) of the propylene sequences in the grafted EP changed a little, the crystallization temperature (T-c) increased about 8-12 degrees C, and the melting enthalpy (Delta H-m) increased about 4-6 J/g. The isothermal crystallization kinetics of grafted and ungrafted samples was carried out by DSC. Within the scope of the researched crystallization temperature, the Avrami exponent (n) of the ungrafted sample was 1.6-1.8, and that of grafted samples were all above 2, which indicated that the grafted monomer could become the crystal nuclei for the crystallization of propylene sequence. With increasing grafted monomer content, the crystallization rate of propylene sequence in grafted EP increased; it might be the result of rapid nucleation rate and crystal growth rate.

Thermal analysis of ethylene-propylene copolymer-grafted-glycidyl methacrylate

The thermal properties of ethylene-propylene copolymer grafted with glycidyl methacrylate (EP-g-GMA) were investigated by using differential scanning calorimetry (DSC). Compared to the plain ethylene-propylene copolymer (EP), peak values of melting temperature (T-m) of the propylene sequences in the grafted EP changed a little, crystallization temperature (T-c) increased about 8-12 degrees C, and melting enthalpy (Delta H-m) increased about 4-6 J/g. The isothermal and nonisothermal crystallization kinetics of grafted and ungrafted samples was carried out by DSC. Within the scope of the researched crystallization temperature, the Avrami exponent (n) of ungrafted sample is 1.6-1.8, and those of grafted samples are all above 2. The crystallization rates of propylene sequence in EP-g-GMA were faster than that in the plain EP and increased with increasing of grafted monomer content. It might be attributed to the results of rapid nucleation rate. (C) 1996 John Wiley & Sons, Inc.

Properties of ethylene-propylene copolymer/PA-1010 blends using ethylene-propylene copolymer-graft-acrylic acid as a compatibilizing agent

The modification of ethylene-propylene copolymer (EP) has been accomplished by radical EP-graft-acrylic acid (EP-g-AA) has been used to obtain ternary PA/EP/EP-g-AA blends by melt mixing. Different blend morphologies were observed by scanning electron microscopy; the domain size of the EP-dispersed phase in the polyamide 1010 matrix of compatibilized blends decreased compared with that of uncompatibilized blends. It is found that EP-g-AA used as the third component has a profound effect on the mechanical properties of the resulting blends. This behavior has been attributed to serious chemical interactions taking place between the two components. Thermal analysis shows that some thermal properties of PA in compatibilized PA/EP/EP-g-AA changed because of chemical reactions taken place during the blending process. Wide angle x-ray diffraction measurements also confirmed this result. (C) 1996 John Wiley & Sons, Inc.

THERMAL BEHAVIORS OF INTRINSIC POLYANILINE AND ITS DERIVATIVES

Thermal properties of polyaniline (PAn), polytoluidine(POT) and polyanisidine(PAs) were examined by TG and DSC techniques. The weight-uptake of POT at 200-300 degrees C was observed and carefully discussed.

STRUCTURES AND PROPERTIES OF DIALKYL FUMARATES POLYMERS

Polymers of methyl-iso-propyl fumarate, di-iso-propyl fumarate, di-t-butyl fumarate, di-s-butyl fumarate, di-s-amyl fumarate and di-cyclo-hexyl fumarate were prepared by radical polymerization. The structures of the polymers were examined by H-1-NMR, C-13-NMR and WAXD. Some properties of the polymers, including thermal properties, were examined.

ISOLATION AND PROPERTIES OF MOLYBDENUM SERIES OF HETEROPOLY BLUE WITH KEGGIN STRUCTURE

The present paper reports the methods for preparing and isolating 8 kinds of 1:12 molybdenum series of heteropoly blue complexes KyHzXMo12O40 . nH2O (X=Si, P, As, Ge). The products were characterized by elemental analyses, potential titration, polarograms, cyclic voltammetry, IR spectra, visible-UV spectra, X-ray powder diffraction, XPS and P-31 NMR. The single crystal structure of 4-electron molybdenum-silicon heteropoly blue was measured and the positions of reduced molybdenum atoms were determined, i.e. they were located at Mo(3), Mo(7), Mo(8) and Mo(10). The experimental results show that the heteropoly blue remains Keggin structure. ESR spectra of heteropoly blue solids were first studied, from which it was found that the delocalization extent of 2-electron heteropoly blue and 4-electron heteropoly blue is smaller than that of 1-electron heteropoly blue. The study of thermal properties shows that the thermal stability increases with the increase of the reduction extent of heteropoly blue. The study of redox properties shows that the oxidizing power order of heteropoly blue changes in different mediums, and the polarographic half-wave voltage is found to be dependent on the electronegativity of the hetero atom linearly. It is found that the phosphorus heteropoly blue and arsenic heteropoly blue show a strong anti-acid property.

2-氨基-6-乙氧基苯并噻唑类偶氮染料及其金属鏊合物的合成及光学热学性能研究

合成了2-（2-氨基-6-乙氧基苯并噻唑基偶氮）-5-（N,N-二乙基氨基）三氟甲基磺酰苯胺偶氮染料（EBTDATFS）及其与乙酸镍、乙酸钴、乙酸铜、乙酸锌等金属盐鏊合的金属鏊合物。通过红外光谱、紫外-可见吸收光谱和MALDI质谱等对染料及其金属鏊合物进行了结构表征;使用旋涂方法在K9玻璃和抛光的单晶硅基片上制备薄膜;研究了镍金属鏊合物的热学性能;使用椭偏仪研究了Ni和Zn鏊合物的光学常数。结果表明：4种金属鏊合物薄膜最大吸收光谱为621-629nm,且长波边吸收峰陡峭;TGA-DSC测试结果表明镍金属鏊

Rare earth dibenzoylmethane complexes for potential application as high-density recordable optical recording materials

Three kinds of rare earth complexes derived from dibenzoylmethane (DBM) ligand were synthesized by reacting free ligand and different rare earth ions(La (3+), Sm3+ and Gd3+). Their contents and structures were postulated based on elemental analysis, LDI-TOF-MS, FT-IR spectra and UV-Vis spectra. Smooth films on K9 glass substrates were prepared using the spin-coating method. Their solubility in organic solvents, absorption and reflection properties of thin film and thermal stability of these complexes were evaluated. These complexes would be a promising recording material for high-density digital versatile disc-recordable (HD-DVD-R) system. (c) 2007 Elsevier B.V. All rights reserved.

氟磷酸盐玻璃的应用研究进展

氟磷酸盐玻璃系统南于其特殊的光学性能和优良的机做与热学性能一直是特种光学玻璃材料领域的一个研究热点。总结了氟磷酸盐玻璃的分类及玻璃组分与其结构的关系，综述了氟磷玻璃在光学器件、高能高功率激光玻璃、光纤激光器、光纤放大器及上转换发光基质材料等领域上的应用，并对其未来的发展进行了展望。

TeO2-ZnCl2-BaO-NaF玻璃系统的结构及中红外透过特性的研究

制备了一种新型的氧卤碲酸盐玻璃：（80-x）TeO2—15ZnCl2-xBaO-5NaF（x=30、20、10、0mol％），对玻璃的机械强度、热稳定性、拉曼光谱、紫外吸收光谱、红外透过光谱等特性进行了研究．通过拉曼光谱分析研究了玻璃组分含量的变化对玻璃结构和红外透过性能的影响．结果表明，随着BaO含量的增加，玻璃在红外波段透过率显著增加，并且红外透过截止波长向长波方向移动，本文对这一实验结果进行了机理性的研究探讨．同时，通过在熔制过程中通入高纯O2，以及引入适量的卤化物有效地除去玻璃中的[OH]基团，使

γ-LiAlO2晶体生长、改性和热学性质研究

采用快速提拉法生长出了透明、完整的γ-LIAlO2晶体，但是晶体的高熔点和易挥发性限制了γ-LiAlO2晶体质量．采用气相传输平衡法（vapor transport equilibration technique，VTE）工艺对晶体改性，半高宽（FWHM）值从116．9arcsec降至44．2arcsec，继续升高VTE处理温度至1300℃，FWHM值反而升高至55．2arcsec．快速提拉法生长出来晶体，[100]方向和[001]方向的热膨胀系数分别为17．2398×10^-6／K，10．7664×10

Bulk crystal growth and efficient diode-pumped laser performance of Yb 3+:Sc2SiO5

A bulk crystal of Yb:Sc2SiO5 (Yb:SSO) with favorable thermal properties was successfully obtained by the Czochralski method. The energy level diagrams for Yb:SSO crystal were determined by optical spectroscopic analysis and semi-empirical crystal-field calculations using the simple overlap model. The full width at half maximum of the absorption band centering at 976 nm was calculated to be 24 nm with a peak absorption cross-section of 9.2x10(-21) cm(2). The largest ground-state splitting of Yb3+ ions is up to 1027 cm(-1) in a SSO crystal host. Efficient diode-pumped laser performance of Yb:SSO was primarily demonstrated with a slope efficiency of 45% and output power of 3.55 W.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

基于紧束缚分子动力学模型的Na4,Na8和Na20团簇结构及热力学性质研究

利用距离相关的紧束缚的分子动力学模型（DDTB－MD），通过提取不同温度下的势能、构型、无单位键长涨落平均位移、扩散系数、围绕质心的径向分布等参量，系统的研究了菱形结构和T形结构的Na4、Td结构和D2d结构的Na8，以及Na20的热力学的性质。对于Na4，比较了金属团簇Na4的菱形结构和T形结构两种异构体之间热力学性质的异同。发现在团簇温度升高的过程中，两种异构体都会发生从类固到类液的相变。T形结构的Na4熔点要比菱形结构的低。在相变的过程中都会发生赝转动和异构化。还发现了赝转动的判据不仅仅只是温度，还包括无单位键长涨落的δ值。菱形结构的Na4在200K左右不一定会发生赝转动，只有观察到温度处于200K左右，δ值≥0.08的时候，赝转动则必然会观察到。菱形结构Na4的赝转动过程中会发现T形结构的异构化，但其维持时间很短，不稳定，很快又转变为菱形结构。而T形结构在170K就能观察到异构化和赝转动的发生，在这个温度下会不断的在菱形与T型之间发生异构，而处于菱形结构的时间要比T型长的多。表现为菱形结构的稳定性要大于T型。对于Na8的两种不同的异构体（分别为Td结构和D2d结构），发现尽管两个异构体的基态能量很接近，但他们的稳定性、熔化过程的热力学性质等有着很大的差别，这也反映了它们在几何结构上的差别。对称性强的Td结构更紧密，在熔化过程中表现出更高的稳定性，具有较高的熔点，具有类晶体的性质.对称性弱的D2d结构则具有较低的熔点，很宽的熔化温度范围，具有类似非晶体的性质. 再比较了基态结构下的Na8和Na20。通过提取对不同的子系统在不同温度下的无单位键长涨落等参数，发现金属原子团簇Na20在熔化过程中表现出了并不像通常金属团簇那样的表面先熔化，而是从内部开始先熔化的奇异特性