An experimental study of ultrashort pulsed ytterbium-doped fibre laser and amplifier

We report the generation of ultrashort pulses in ytterbium-doped fibre oscillator emitting around 1.05 mum at a repetition rate of 17.6MHz. A diode laser with single silica fibre at 976 nm pumps the ytterbium fibre laser, the all-fibre picosecond pulsed oscillator has excellent stability and compact size, and freedom from misalignment. After amplifying, pulse energy of 3.4 nJ and an average power of 60mW are obtained. The compression is obtained with a grating pair out of the cavity. The compressor produces 307 fs with the peak power 5.47 kW. A practical fibre-based source with good performance is thus demonstrated.

Pulse-front matched ultra-broadband optical parametric chirped pulse amplifier for sub-12 fs pulse generation

We propose a LBO-based ultra-broadband chirped pulse optical parametric amplifier employing pulse-front-matching to yield transform-limited sub-12-fs pulses. Measurement of the maximum possible gain bandwidth for the LBO-based OPCPA demonstrates more than 60nm gain bandwidth FWHM. For the generation of TL pulses by the use of this OPCPA, a suitable combination of OPCPA and PFM is first presented. The PFM pump geometry realizes tilt-free signal amplification, and permits this OPCPA to generate TL sub-12-fs pulses.

Spectrum broadening and reshaping via gain compensation of fiber amplifier

We report a novel technique to broaden and reshape the spectrum of picosecond laser pulse based on the seeder of gain switch laser diode and Yb(3+)-doped fiber amplifier (YDFA). From compensating the seed spectrum with the gain of YDFA, the seed pulse of 7 nm bandwidth is broadened to 20 nm, and the flat top spectral shape is obtained as well. A self-made fiber coupled tunable filter is used to realize the tunable output laser with the wavelength range from 1053 nm to 1073 nm and the line width of 1.4 nm.

1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications

A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS tech nology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capaci tance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resis tance is 50 Ω, and the average input noise current spectral density is 9.7 pA/(Hz)~(1/2). Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply.

5.2 GHz variable-gain amplifier and power amplifier driver for WLAN IEEE 802.11a transmitter front-end

A 5.2 GHz variable-gain amplifier (VGA) and a power amplifier (PA) driver are designed for WLAN IEEE 802.11a monolithic RFIC. The VGA and the PA driver are implemented in a 50 GHz 0.35 μm SiGe BiCMOS technology and occupy 1.12×1.25 mm~2 die area. The VGA with effective temperature compensation is controlled by 5 bits and has a gain range of 34 dB. The PA driver with tuned loads utilizes a differential input, single-ended output topology, and the tuned loads resonate at 5.2 GHz. The maximum overall gain of the VGA and the PA driver is 29 dB with the output third-order intercept point (OIP3) of 11 dBm. The gain drift over the temperature varying from -30 to 85℃ converges within±3 dB. The total current consumption is 45 mA under a 2.85 V power supply.

AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band

A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10×120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at V_(DS) =40V, I(DS)= 0. 9A, a maximum CW output power of 41. 4dBm with a maximum power added efficiency (PAE) of 32. 54% and a power combine efficiency of 69% was achieved at 5. 4GHz.

A Multi-Finger Si_(1-x)Ge_x/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

A large area multi-finger configuration power SiGe HBT device(with an emitter area of about 880μm~2)was fabricated with 2μm double-mesa technology.The maximum DC current gain β is 214.The BV_(CEO) is up to 10V,and the BV_(CBO) is up to 16V with a collector doping concentration of 1×10~(17)cm~(-3) and collector thickness of 400nm.The device exhibits a maximum oscillation frequency f_(max) of 19.3GHz and a cut-off frequency f_T of 18.0GHz at a DC bias point of I_C=30mA and V_(CE)=3V.MSG(maximum stable gain)is 24.5dB,and U(Mason unilateral gain)is 26.6dB at 1GHz.Due to the novel distribution layout,no notable current gain fall-off or thermal effects are observed in the I-V characteristics at high collector current.

A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions

We present the design of a wide-band low-noise amplifier （LNA） implemented in 0.35μm SiGe BiCMOS technology for cable and terrestrial tuner applications. The LNA utilizes current injection to achieve high linearity. Without using inductors, the LNA achieves 0.1 ～ 1GHz wide bandwidth and 18. 8dB gain with less than 1.4dB of gain variation. The noise figure of the wideband LNA is 5dB, and its 1dB compression point is - 2dBm and IIP3 is 8dBm. The LNA dissipates 120mW of power with a 5V supply.

Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V.

An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.

Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs

A semiconductor optical amplifier gate based on tensile-strained quasi-bulk InGaAs is developed. At injection current of 80mA,a 3dB optical bandwidth of more than 85nm is achieved due to dominant band-filling effect.Moreover, the most important is that very low polarization dependence of gain (＜0. 7dB),fiber-to-fiber lossless operation current (70～90mA) and a high extinction ratio (＞50dB) are simultaneously obtained over this wide 3dB optical bandwidth (1520～1609nm) which nearly covers the spectral region of the whole C band (1525～1565nm)and the whole L band (1570～ 1610nm). The gating time is also improved by decreasing carrier lifetime. The wideband polarization-insensitive SOA-gate is promising for use in future dense wavelength division multiplexing (DWDM) communication systems.