7.3 W of single-frequency output power at 2.09 μm from an Ho:YAG monolithic nonplanar ring laser

Single-frequency output power of 7.3 W at 2.09 mu m from a monolithic Ho:YAG nonplanar ring oscillator (NPRO) is demonstrated. Resonantly pumped by a Tm-doped fiber laser at 1.91 mu m, the Ho:YAG NPRO produces 71% of slope efficiency with respect to absorbed pump power and nearly diffraction-limited output with a beam quality parameter of M-2 approximate to 1.1. (c) 2008 Optical Society of America

Stress-facilitated LTD induces output plasticity through a synchronized-spikes and spontaneous unitary discharges the CA1 region of the hippocampus

Long-term potentiation (LTP) and long-term depression (LTD) of the excitatory synaptic inputs plasticity in the hippocampus is believed to underlie certain types of learning and memory. Especially, stressful experiences, well known to produce long-lasting strong memories of the event themselves, enable LTD by low frequency stimulation (LFS, 3 Hz) but block LTP induction by high frequency stimulation (HFS, 200 Hz). However, it is unknown whether stress-affected synaptic plasticity has an impact on the output plasticity. Thus, we have simultaneously studied the effects of stress on synaptic plasticity and neuronal output in the hippocampal CA1 region of anesthetized Wistar rats. Our results revealed that stress increased basal power spectrum of the evoked synchronized-spikes and enabled LTD induction by LFS. The induction of stress-facilitated LTD but not LFS induced persistent decreases of the power spectrum of the synchronized-spikes and the frequency of the spontaneous unitary discharges; However, HFS induced UP in non-stressed animals and increased the power spectrum of the synchronized-spikes, without affecting the frequency of the spontaneous unitary discharges, but HFS failed to induce UP in stressed animals without affecting the power spectrum of the synchronized-spikes and the frequency of the spontaneous unitary discharges. These observations that stress-facilitated LTD induces the output plasticity through the synchronized-spikes and spontaneous unitary discharges suggest that these types of stress-related plasticity may play significant roles in distribution, amplification and integration of encoded information to other brain structures under stressful conditions. (C) 2004 Elsevier Ireland Ltd and The Japan Neuroscience Society. All rights reserved.

Output Characteristics of an InP/InGaAsP Triangle Microcavity Laser

Mode competitions between modes with different output coupling efficiencies can result in optical bistability under certain asymmetric nonlinear gain. For a GaInAsP/InP equilateral triangle microlaser with the side length of 10 mu m, the drop of the output power with the increase of the injection current is observed corresponding to transverse mode transitions. Furthermore, the measured laser spectra up to 270 K show that lasing modes coexist with the wavelength interval of 39 nm at 240 K. The emission at 5.2 THz can be expected by the mode frequency beating with the 39 nm interval.

Mode characteristics of metallically coated square microcavity connected with an output waveguide

Mode characteristics of a square microcavity with an output waveguide on the middle of one side, laterally confined by an insulating layer SiO2 and a p-electrode metal Au, are investigated by two-dimensional finite-difference time-domain technique. The mode quality (Q) factors versus the width of the output waveguide are calculated for Fabry-Peacuterot type and whispering-gallery type modes in the square cavity. Mode coupling between the confined modes in the square cavity and the guided modes in the output waveguide determines the mode Q factors, which is greatly influenced by the symmetry behaviors of the modes. Fabry-Peacuterot type modes can also have high Q factors due to the high reflectivity of the Au layer for the vertical incident mode light rays. For the square cavity with side length 4 mu m and refractive index 3.2, the mode Q factors of the Fabry-Peacuterot type modes can reach 10(4) at the mode wavelength of 1.5 mu m as the output waveguide width is 0.4 mu m.

Analysis of coupled microcircular resonators coupled to a bus waveguide with high output efficiency

Coupled microcircular resonators tangentially coupled to a bus waveguide, which is between the resonators, are numerically investigated by the finite-difference time-domain technique. For symmetrically coupled microcircular resonators with refractive index of 3.2, radius of 2 mu m, and width of the bus waveguide of 0.4 mu m, a mode Q factor of the order of 105 is obtained for a mode at the frequency of 243 THz. An output coupling efficiency of as high as 0.99 is calculated for a mode with a Q factor ranging from 10(3) to 10(4). The mode Q factor is 2 orders larger than that of the modes confined in a single circular resonator tangentially coupled to the same bus waveguide. Furthermore, the high Q traveling modes in the coupled microcircular resonators are suitable for optical single processing.

Enhancement of the far-field output power and the beam properties of plasmonic very small aperture lasers

The properties of plasmonic very small aperture lasers are shown: these integrate surface plasmon structures with very small aperture lasers. The transmission field can be confined to a spot of subwavelength width in the far field, and according to the finite difference time domain simulation results the focal length of the spot can be modulated using different ring periods. Scanning of the subwavelength gating in the far field has been realized numerically. Such a device can be used with a high-resolution far-field scanning optical microscope.

High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

Mechanism of enhancing output power of plasmonic very-small-aperture lasers

Light transmission through a single subwavelength slit surrounded by periodic grooves in layered films consisting of Au and dielectric material is analyzed by the finite difference time domain method in two dimensions. The results show that the transmission field can be enhanced by the corrugations on the output plane, which is a supplementary explanation for the extraordinary optical transmission.

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale to enhance the light output power of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs on a pyramidal patterned sapphire substrate in the microscale (MPSS) and pyramidal patterned sapphire substrate in the nanoscale (NPSS) were grown by metalorganic chemical vapor deposition. The characteristics of the LEDs fabricated on the MPSS and NPSS prepared by wet etching were studied and the light output powers of the LEDs fabricated on the MPSS and NPSS increased compared with that of the conventional LEDs fabricated on planar sapphire substrates. In comparison with the planar sapphire substrate, an enhancement in output power of about 29% and 48% is achieved with the MPSS and NPSS at an injection current of 20 mA, respectively. This significant enhancement is attributable to the improvement of the epitaxial quality of GaN-based epilayers and the improvement of the light extraction efficiency by patterned sapphire substrates. Additionally, the NPSS is more effective to enhance the light output power than the MPSS. (c) 2008 American Institute of Physics.

Application of sampled grating to control the lasing wavelength in complex-coupled DFB laser

This paper reports that the complex-coupled distributed feedback laser with the sampled grating has been designed and fabricated. The +1st order reflection of the sampled grating is utilized for laser single mode operation, which is 1.5387 mu m in the experiment. The typical threshold current of the device is 30 mA, and the optical output power is about 10 mW at the injection current of 100 mA.

Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm(2) and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.

Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology

In this paper we report, to the best of our knowledge, the first experimental realization of distributed feedback (DFB) semiconductor lasers based on reconstruction-equivalent-chirp (REC) technology. Lasers with different lasing wavelengths are achieved simultaneously on one chip, which shows a potential for the REC technology in combination with the photonic integrated circuits (PIC) technology to be a possible method for monolithic integration, in that its fabrication is as powerful as electron beam technology and the cost and time-consuming are almost the same as standard holographic technology. (C) 2009 Optical Society of America