Broad-band semiconductor optical amplifiers

Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared. (c) 2006 Elsevier B.V. All rights reserved.

Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are calculated using the ten-band k . p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. With the variation of QD sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. It facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. For QD with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the Fermi-Dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. For larger QD, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller QD as carrier concentration increases. Larger QD can reach its saturation gain faster, but this saturation gain is smaller than that of smaller QD. So the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate QD size according to the specific application requirement. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3143025]

Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

Efficient Mode-locked and Q-switched Nd∶YVO_4 Laser with Semiconductor Saturable Absorber Mirror

We reported an efficient diode pumped Nd ! YVO, 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7. 5 W, 2. 81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37. 5% , and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.

Optical Pr operties of GaNAs and GaAsSb Semiconductors

Under short pulse laser excitation, it has been observed, for the first time, a new high-energy photoluminescence emission from GaNx As1- x/GaAs SQWs. This new emission has totally different optical properties compared with the localized exciton transition in GaNx As1-x, and is attributed to the recombination of delocalized excitons in QWs. At the same time, a competition process between localized and delocalized exciton emissions in GaNx As1-x/GaAs quantum wells is observed in the temperaturedependent PL spectra under the short pulse excitation. This competition process for the first time, reveals the physical origin of the temperature-induced S-shaped PL peak shift, which was often reported in the disordered alloy semiconductor system under continuous-wave excitation and puzzled people for a long time. We have also investigated a set of GaNx As1- x samples with small nitrogen composition( x ＜ 1% )by PL, and time-resolved PL. After the PL dependence on temperature and excitation power and PL dynamics were measured, the new PL peak was identified as an intrinsic transition of alloy, rather than N-related bound states. This is the first observation in PL, showing that alloy state exists in GaNx As1- x materials even when N composition is smaller than 0.1%. Finally by selective excitation,both type-Ⅰ and type-Ⅱ transitions were observed simultaneously in GaAs1-xSbx/GaAs SQWs for the first time.

An Improved Driving Circuit for Thermo-Optical Switch to Improve the Reliability of Thermo-Optical Switch Matrix

The influence of the heaters on the reliability of the thermo-optic (TO) switch matrix is analyzed and an improved driving circuit based on the analyzed results is designed and fabricated. The circuit can improve the reliability of the switch matrix device from 78.87% to 97.04% for a 4×4 optical switch device with a simplified tree structure. The simulation and experimental results show the circuit can provide suitable driving current for TO switch matrix.

Circular crating optical scanning holography

The principle of optical scanning holography with circular gratings (CG) as the scanning field is presented. The generation and reconstruction processes of the scanning holography are described. These processes are numerical simulated by computer and the results are achieved. It is shown that the resolution power of the reconstructed image of CG scanning hologram is higher than that of FZP scanning hologram.

Generation of optimized wavelength-tunable optical pulse from an uncooled gain-switched Fabry-Perot semiconductor laser using optical amplifier as external light injection

We present a novel system design that can generate the optimized wavelength-tunable optical pulse streams from an uncooled gain-switched Fabry-Perot semiconductor laser using an optical amplifier as external light source. The timing jitter of gain-switched laser has been reduced from about 3 ps to 600 fs and the pulse width has been optimized by using our system. The stability of the system was also experimentally investigated. Our results show that an uncooled gain-switched FP laser system can feasibly produce the stable optical pulse trains with pulse width of 18 ps at the repetition frequency of 5 GHz during 7 h continuous working. We respectively proved the system feasibility under 1 GHz, 2.5 GHz and 5 GHz operation. (c) 2008 Elsevier B.V. All rights reserved.

The formation of ring-banded spherulites of poly(epsilon-caprolactone) in its miscible mixtures with poly(styrene-co-acrylonitrile)

Ring-banded spherulites in polymer blends of poly(epsilon-caprolactone) (PCL) and poly(styrene-co-acrylonitrile) (SAN) were investigated by optical microscopy equipped with a digital image analysis system. PCL/SAN blends exhibit not only spherulites with a Maltese cross, but also distinct extinction rings. The periodic distance of rings changes with blend ratio and crystallization temperature and was plotted as a function of the undercooling and overall mobility of the mixtures, respectively. It was found that the overall mobility of chain segments in the mixtures could be mainly attributed to the origin of the formation of ring-banded spherulites. It was believed that for the first time a quantitative experimental result was obtained about the relationship of periodic distance of rings and the overall mobility of the mixtures. This relationship may be useful to explain the formation mechanism of ring-banded spherulites in polymer blends or even in homopolymers in the future. (C) 1977 Elsevier Science Ltd.

Experimental Study On Liquid Free Surface In Buoyant-Thermocapillary Convection

We investigate the surface deformations of buoyant-thermocapillary convection in a rectangular cavity clue to gravity and temperature gradient between the two sidewalls. The cavity is 52mm x 42mm in horizontal cross section, the thickness of liquid layer h is changed from 2.5mm to 6.5mm. Surface deformations of h = 3.5mm and 6.0mm are discussed and compared. Temperature difference is increased gradually, and the flow in the liquid layer will change from stable convection to unstable convection. Two kinds of optical diagnostic system with image processor are developed for study of the kinetics of buoyant-thermocapillary convection, they give out the information of liquid free surface. The quantitative results are calculated by Fourier transform and correlation analysis, respectively. With the increasing temperature gradient, surface deformations calculated are more declining. It is interesting phenomenon that the inclining directions of the convections in thin and thick liquid layers are different. For a thin layer, the convection is mainly controlled by thermocapillary effect. However, for a thick layer, the convection is mainly controlled by buoyancy effect. The surface deformation theoretically analysed is consistent with our experimental results. The present experiment proves that surface deformation is related to temperature gradient and thickness of the liquid layer. In other words, surface deformation lies on capillary convection and buoyancy convection.

Single sub-100 attosecond pulse generation in a two-colour time-gating laser field

We theoretically propose a method of generating a single sub-100 attosecond (as) pulse with a two-colour time-gating laser field. The field is synthesized by an 8 fs/800 nm (three optical cycles) pulse and a 24 fs/2400 nm (three optical cycles) pulse with an optimal time delay between them. In our simulation, we obtain a supercontinuum with an extremely broad spectrum of 150 eV and generate an isolated attosecond pulse with 96 as pulse duration without any dispersion compensation.

Tunable phase-stabilized infrared parametric laser source

This paper reports that the tunable self-phase-stabilized infrared laser pulses have been generated from a two-stage optical parametric amplifier. With an 800 nm pump source, the output idler pulses are tunable from 1.3 mu m to 2.3 mu m, and the maximum output energy of the idler pulses is higher than 1 mJ at 1.6 mu m by using 6 mJ pump laser. A carrier-envelope phase fluctuation of similar to 0.15 rad (rms) for the idler pulses is measured for longer than one hour by using a home build f-to-2f interferometer.

Small-dynamic-angle measurement using tangent relationship and phase-modulating technique

A method using two prisms for measurement of small dynamic angles is proposed in which the measurement is based on a simple tangent equation and a phase-modulating interferometer with a laser diode to measure dynamic optical path differences with higher accuracy. Owing to the simple tangent equation, the symmetry requirement on the two prisms in the optical configuration is eliminated, and easy measurement of the separations between two parallel beams with a position-sensitive detector is achieved. Small-dynamic-angle measurements are experimentally demonstrated with high accuracy. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

光纤连接器端面几何参量自动测量仪

报道了一种高精度测量光纤连接器端面几何参量的自动测量仪。叙述了光纤连接器的端面几何参量的测量原理。由光纤连接器端面形貌和纤芯中心坐标，可以高精度得到曲率半径、顶点偏移量、端面倾斜角和光纤高度等影响连接器性能的关键端面几何参量。该仪器体积小，自动化程度高，用户界面友好，使用方便，可测量物理接触、角度式物理接触等类型的光纤连接器端面几何参量。实际测量证明，该测量仪有很好的重复测量精度。该测量仪与美国Dorc公司ZX-1 mini PMS测量仪和Norland公司NC3000测量仪相比，测量精度水平相当。该仪器

Small-dynamic-angle measurement using tangent relationship and phase-modulating technique

A method using two prisms for measurement of small dynamic angles is proposed in which the measurement is based on a simple tangent equation and a phase-modulating interferometer with a laser diode to measure dynamic optical path differences with higher accuracy. Owing to the simple tangent equation, the symmetry requirement on the two prisms in the optical configuration is eliminated, and easy measurement of the separations between two parallel beams with a position-sensitive detector is achieved. Small-dynamic-angle measurements are experimentally demonstrated with high accuracy. (C) 2007 Society of Photo-Optical Instrumentation Engineers.