90 resultados para metal oxide
Resumo:
SOI (Silicon on Insulator) based photonic devices, including stimulated emission from Si diode, RCE (Resonant Cavity Enhanced) photodiode with quantum structure, MOS (Metal Oxide Semiconductor) optical modulator with high frequency, SOI optical matrix switch and wavelength tunable filter are reviewed in the paper. The emphasis will be played on our recent results of SOI-based thermo-optic waveguide matrix switch with low insertion loss and fast response. A folding re-arrangeable non-blocking 4x4 matrix switch with total internal reflection (TIR) mirrors and a first blocking 16 x 16 matrix were fabricated on SOI wafer. The extinction ratio and the crosstalk are better. The insertion loss and the polarization dependent loss (PDL) at 1.55 mu m increase slightly with longer device length and more bend and intersecting waveguides. The insertion losses are expected to decrease 2-3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.
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This paper proposes a novel, fast lock-in, phase-locked loop (PLL) frequency synthesizer. The synthesizer includes a novel mixed-signal voltage-controlled oscillator (VCO) with a direct frequency presetting circuit. The frequency presetting circuit can greatly speed up the lock-in process by accurately the presetting oscillation frequency of the VCO. We fully integrated the synthesizer in standard 0.35 mu m, 3.3 V complementary metal-oxide-semiconductors (CMOS) process. The entire chip area is only 0.4 mm(2). The measured results demonstrate that the synthesizer can speed up the lock-in process significantly and the lock-in time is less than 10 mu s over the entire oscillation frequency range. The measured phase noise of the synthesizer is -85 dBc/Hz at 10 kHz offset. The synthesizer avoids the tradeoff between the lock-in speed and the phase noise/spurs. The synthesizer monitors the chip temperature and automatically compensates for the variation in frequency with temperature.
Resumo:
Chemical-looping reforming (CLR) is a technology that can be used for partial oxidation and steam reforming of hydrocarbon fuels. It involves the use of a metal oxide as an oxygen carrier, which transfers oxygen from combustion air to the fuel. Composite oxygen carriers of cerium oxide added with Fe, Cu, and Mn oxides were prepared by co-precipitation and investigated in a thermogravimetric analyzer and a fixed-bed reactor using methane as fuel and air as oxidizing gas. It was revealed that the addition of transition-metal oxides into cerium oxide can improve the reactivity of the Ce-based oxygen carrier. The three kinds of mixed oxides showed high CO and H-2 selectivity at above 800 degrees C. As for the Ce-Fe-O oxygen carrier, methane was converted to synthesis gas at a H-2/CO molar ratio close to 2:1 at a temperature of 800-900 degrees C; however, the methane thermolysis reaction was found on Ce-Cu-O and Ce-Mn-O oxygen carriers at 850-900 degrees C. Among the three kinds of oxygen carriers, Ce-Fe-O presented the best performance for methane CLR. On Ce-Fe-O oxygen carriers, the CO and H-2 selectivity decreased as the Fe content increased in the carrier particles. An optimal range of the Ce/Fe molar ratio is Ce/Fe > 1 for Ce-Fe-O oxygen carriers. Scanning electron microscopy (SEM) analysis revealed that the microstructure of the Ce-Fe-O oxides was not dramatically changed before and after 20 cyclic reactions. A small amount of Fe3C was found in the reacted Ce-Fe-O oxides by X-ray diffraction (XRD) analysis.
Resumo:
We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOI).Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure,which boosts the modulation efficiency compared with a single MOS capacitor.The simulation results demonstrate that the VπLπ product is 2.4V·cm.The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve,respectively,indicating a bandwidth of 8GHz.The phase shift efficiency and bandwidth can be enhanced by rib width scaling.
Resumo:
介绍了不同截面大小的SOI(silicon-on-insulator)波导单模条件,详细描述了几种降低传输损耗,消除偏振相关,提高耦合效率的技术手段.分析比较了一种带有MOS(metal-oxide-semiconductor)电容结构和一种具有微环结构的高速电光调制器,其调制频率分别达到10和1.5GHz.
Resumo:
A new reaction mode, i.e., the combined single-pass conversion of methane via oxidative coupling (OCM) over mixed metal oxide (SLC) catalysts and dehydroaromatization (MDA) over Mo/HZSM-5 catalysts, is reported. With the assistance of an OCM reaction over SLC catalysts in the top layer of the reactor, the deactivation resistance of Mo/HZSM-5 catalysts is remarkably enhanced. Under the selected reaction conditions, the CH(4) conversion decreased from similar to18 to similar to1% and the aromatics yield decreased from 12.8 to 0.1%, respectively, after running the reaction for 960 min on both 6Mo/HZSM-5 and SLC-6Mo/HZSM-5 catalyst system without O(2) in the feed. On the other hand, for the SLC-6Mo/HZSM-5 catalyst system with O(2) in the feed, the deactivation was improved greatly, and after 960 min onstream the CH(4) conversion and aromatics yield were still as high as 12.0 and 8.0%, respectively. The promotion effect mainly appears to be associated with in situ formation of CO(2) in the OCM layer, which reacts with coke via the reverse Boudouard reaction.
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We realized ambipolar transport behavior in field-effect transistors by using p-p isotype heterojunction films as active layers, which consisted of two p-type semiconductor materials, 2, 2'; 7', 2 ''-terphenanthrenyl (Ph3) and vanadyl-phthalocyanine (VOPc). The ambipolar charge transport was attributed to the interfacial electronic structure of Ph3-VOPc isotype heterojunction, and electrons and holes were accumulated at both sides of the narrow band-gap VOPc and the wide band-gap Ph3, respectively, which were confirmed by the capacitance-voltage relationship of metal-oxide-semiconductor diodes. The accumulation thickness of carriers was also obtained by changing the heterojunction active layer thickness. Furthermore, the results indicate that the device performance is relative to interfacial electronic structures.
Resumo:
Polyaniline emeraldine base/epoxy resin (EB/ER) coating was investigated for corrosion protection of mild steel coupled with copper in 3.5% NaCl solution. EB/ER coating with 5-10 wt% EB had long-term corrosion resistance on both uncoupled steel and copper due to the passivation effect of EB on the metal surfaces. During the 150 immersion days, the impedance at 0.1 Hz for the coating increased in the first 1-40 days and subsequently remained constant above 10(9) Omega cm(2), whereas that for pure ER coating fell below 10(6) Omega cm(2) after only 30 or 40 days. Immersion tests on coated steel-copper galvanic couple showed that EB/ER coating offered 100 times more protection than ER coating against steel dissolution and coating delamination on copper, which was mainly attributed to the passive metal oxide films formed by EB blocking both the anodic and cathodic reactions. Salt spray tests showed that 100 mu m EB/ER coating protected steel-copper couple for at least 2000 h.
Resumo:
直接甲醇燃料电池(DMFC)是以固体聚合物为电解质,阳极以液相甲醇或蒸气相甲醇进料,阴极以空气或氧气为氧化剂.DMFC具有原料甲醇易储存、电池的理论电压高和能量效率高等特点,适于作电动车电源和便携式电源,具有广阔的发展前景.然而,在DMFC中,甲醇的阳极氧化涉及6个电子的传递过程,比氢气的氧化更困难,由于存在较高的阳极过电位,使得电池的实际输出电压低于理论电压;更为重要的是甲醇的部分氧化中间产物(CO)易使电催化剂中毒,因此,高效的阳极电催化剂一直是DMFC中的重要研究领域之一[1~7].目前解决这一问题的途径主要集中在对电催化剂的研究和改进上,如性能较好的Pt/Metal(oxide),即Pt复合金属或金属氧化物催化剂.稀土元素Ln系位于元素周期表中的B族,具有丰富的d轨道和f轨道电子,因此可以作为催化剂中的第二种金属元素加以研究.将稀土元素及其氧化物用于较低温度(250℃)下催化CO的化学氧化反应已早有研究[8].目前,已经有将Rh/Sm和Pt/Sm合金应用于CO的催化氧化反应的研究报道[9].本文选择几种稀土离子作为添加剂,研究了稀土离子对甲醇电氧化反应的影响.1实验部分1.1试剂与仪器甲醇(优级纯),...
Ambipolar organic field-effect transistors with air stability, high mobility, and balanced transport
Resumo:
Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though symmetrical Au source and drain electrodes were used, and exhibited air stability and balanced ambipolar transport behavior. High field-effect mobilities of 0.04 cm(2)/V s for the holes and 0.036 cm(2)/V s for the electrons were obtained. The capacitance-voltage characteristic of metal-oxide-semiconductor (MOS) diode confirmed that electrons and holes are transported at F16CuPc and BP2T layers, respectively. On this ground, complementary MOS-like inverters comprising two identical ambipolar OFETs were constructed.
Resumo:
Magnetic microsphere comprises a magnetically responsive metal or metal oxide core surrounded by a polymer shell with active groups. Nowadays, methods of directly coating polymer, monomer polymerazation, impregnation, extrusion and biological synthesis are generally used to prepare magnetic particles. This kind of superparamagnetic microspheres can be attached to chemical, biochemical and biological substances by their active groups, then applying a magnetic field to separate from the media. Preparation and utilization of magnetic microspheres in immunoassay, nucleic acid hybrization assay, gene sequencing, cell isolation, enzyme immoblization, receptor isolation and other Gelds are reviewed with 44 references in this paper. Also, the further development is outlooked.