Effects of crystal growth conditions on morphology of crystalline syndiotactic 1,2-polybutadiene

The crystalline syndiotatic 1,2-polybutadiene was synthesized with a catalyst consisting of iron acetylacetonate (Fe(acac)(3))-triisobutylaluminum (Al(i-Bu)(3))-diethyl phosphite (DEP), and the effects of crystal growth conditions on morphology of thin films of the polymer were investigated by transmission electron microscopy (TEM) and electron diffraction (ED) techniques. The polymer with melting point 179 degreesC was found to have 89.3% 1,2-content and 86.5% syndiotacticity by C-13 NMR measurement. The results of electron microscopic studies indicate that the solution-cast thin films of the syndiotatic 1,2-polybutadiene consist of lath-like lamellae with the c-axis perpendicular to the film plane, while a- and b-axes are in the film plane. The morphology of isothermally crystallized thin films of the polymer is temperature dependent. At lower crystallization temperatures (130 degreesC), a spherulitic structure consisting of flat-on lamellae is formed. With an increase in the crystallization temperature (e.g., at 140 degreesC), the spherulites and single faceted crystals coexist. At higher crystallization temperatures (150 degreesC), single crystals with a hexagonal prismatic shape are produced.

Crystal growth and structural analysis of PrMnO3 and TbMnO3

Single crystals of PrMnO3 and TbMnO3 were grown by floating zone method and the crystal structure was determined by single crystal X-ray diffractometry. The structure of these compounds belongs to the orthorhombic system (space group is Pnma, No. 62) with the lattice parameters alpha approximate to root (.) - a(p), b approximate to 2 (.) a(p) , c approximate to root 2.a(p) and Z = 4, where a(p) is ideal cubic perovskite cell parameter.

Studies on the morphology transition of micro-crystal growth in polymer films in high vacuum and strong electrostatic field

The morphology of films of isotactic polypropylene poly (3-dodecylthiophene) and iPP/P3DDT blend formed in electrostatic fields has been investigated by using scanning electron microscope. The experiment results show that the micro-crystal morphology of polymer films was strongly dependent on electrostatic fields. It was found that the effect of the electrostatic field led to the formation of dendrite crystals aligned in the field direction, and some branches of P3DDT ruptured. However, the micro-crystals in these films grew into spherulites without electrostatic field,and have no crystal orientation.

Crystal growth and TG-DTA properties of K(2)Ln(NO3)(5).2H(2)O (Ln = La, Ce, Pr, Nd, Sm)

Single crystals of KLnN(Ln=La, Ce, Pr, Nd, Sm) can be grown in water solution with pH approximate to 1 similar to 2 at about 40 degrees C. Crystals of KLnN (Ln=La, Ce, Pr, Nd) are orthorhombic with space group Fdd2. KPrN crystal was grwon and its crystal structure was determined for the first time. The KPrN crystal parameters obtained by the direct method are as follows: a=21.411(3) Angstrom, b=11.2210(10)Angstrom, c=12.208(2) Angstrom, Z=6, R=0.0240. The TG-DTA curves of KLnN(Ln=La,Ce, Pr, Nd, Sm) demonstrate that the processes of dehydration, melt, irreversible phase transition and decomposition of NO3- take place in sequence with the temperature increasing(except KCN). There are three steps in the decomposition of NO3- in KLnN(Ln=La, Nd, Sm) while two steps in KLnN (Ln=Ce, Pr). K(2)Ln(NO3)(5). 2H(2)O are formed at about 225 degrees C by the reaction of the starting materials of KNO3 and Ln(NO3)(3). nH(2)O.

Single crystal growth and spectroscopic properties of KZnF3:Eu3+

Single crystal of KZnF3 : Eu3+ has been grown by means of Bridgman-Stockbarger technique in Ar atmosphere, The emission and excitation spectra of europium ion were measured, The results show that a small amount of Eu2+ exists in the crystal, The existence of Eu2+ ions was also confirmed by ESR data, The valence change of Eu ions during the crystal growth is due to unequivalent substitution of Eu3+ ions for the lattice ions. The sites possibly occupied by Eu ions in this crystal were also discussed.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Hydrothermal growth and gas sensing property of flower-shaped SnS2 nanostructures

Unusual 3D flower-shaped SnS2 nanostructures have been synthesized using a mild hydrothermal treatment in the presence of octyl-phenol-ethoxylate ( Triton X-100) at 160 degrees C. The nanostructures have an average size of 1 mu m, and consist of interconnected nanosheets with thicknesses of about 40 nm. Based on time-dependent experimental results, we ascribe the oriented attachment mechanism to the growth of the SnS2 nanostructures. The nonionic surfactant Triton X-100 plays a key role in the formation of the flower-like morphology. Room temperature gas-sensing measurements show that the 3D SnS2 nanostructures could serve as sensor materials for the detection of NH3 molecules.

Growth and spectroscopic characteristics of Yb : LPS single crystal

For the first time, a high optical quality Yb3+-doped lutetium pyrosilicate laser crystal Lu2Si2O7 (LPS) was grown by the Czochralski (Cz) method. The segregation coefficient of ytterbium ion in Yb:LPS crystal detected by the inductively coupled plasma atomic emission spectrometer (TCP-AES) method is equal to 0.847. X-ray powder diffraction result confirms the C2/m phase monoclinic space group of the grown crystal and the peaks corresponding to different phases were indexed. The absorption and fluorescence spectra, as well as fluorescence decay lifetime of Yb3+ ion in LPS have been investigated. The absorption and fluorescence cross-sections of the transitions F-2(7/2) <-> F-2(5/2) of Yb3+ ion in LPS crystal have been determined. The advantages of the Yb:LPS crystal including high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections (1.33 x 10(-2) cm(2)) and particularly broad emission bandwidth (similar to 62 nm) indicated that the Yb:LPS crystal seemed to be a promising candidate used as compact, efficient thin chip lasers when LD is pumped at 940 and 980 nm due to its low-symmetry monoclinic structure and single crystallographic site. (c) 2007 Elsevier B.V. All rights reserved.

Growth and spectral properties of Yb : FAP single crystal

In this paper, single crystal of ytterbium (Yb) doped Ca-5(PO4)(3)F (FAP) has been grown along the c-axis by using the Czochralski method. The segregation coefficients of Yb3+ in the Yb:FAP crystal has been determined by ICP-AES method. The absorption spectrum, fluorescence spectrum and fluorescence lifetime of the Yb:FAP crystal has been also measured at room temperature. In the absorption spectra, there are two absorption bands at 904 and 982 nm, respectively, which are suitable for InGaAs diode laser pumping. The absorption cross-section (sigma(abs)) is 5.117 x 10(-20) cm(2) with an FWHM of 4 nm at 982 nm. The emission cross-section is (sigma(em)) 3.678 x 10(-20) cm(2) at 1042 nm. Favorable values of the absorption cross-section at about 982 nm are promising candidates for laser diode (LD) pumping. (c) 2005 Elsevier B.V. All rights reserved.

Growth and spectral properties of Yb,Tm:YAG crystal

The YAG crystal codoped with Yb3+ and Tm3+ has been grown by Czochralski (Cz) method. The crystal structure of the crystal has been determined by X-ray diffraction analysis. The absorption and emission spectra of Yb,Tm:YAG crystal at room temperature have also been studied. The emission cross-sections have been calculated by Fuechtbauer-Ladenburg formula and reciprocity method. (C) 2007 Elsevier B.V. All rights reserved.

Growth of highly sensitive thermoluminescent crystal alpha-Al2O3 : C by the temperature gradient technique

In this work, an alpha-Al2O3:C crystal with highly sensitive thermoluminescence was directly grown by the temperature gradient technique (TGT) using Al2O3 and graphite powders as raw materials. The optical and luminescent properties and the dosimetric characteristics of the crystal were investigated. An as-grown alpha-Al2O3:C crystal shows a single glow peak at 462 K and a blue emission peak at 415 nm. The thermoluminescence (TL) response of the crystal shows a linear-sublinear-saturation characteristic. In the dose range from 5 x 10(-6) to 10Gy, the alpha-Al2O3:C crystal shows excellent linearity, and saturation was observed at about 30Gy. The sensitivity of the crystal decreases as the heating rate increases. (c) 2008 Elsevier B.V. All rights reserved.

Growth and annealing properties of Mg0.4Al2.4O4 crystal

Mg0.4Al2.4O4 single crystals with good optical quality were successfully grown by the Czochralski method. The transmission spectrum indicated that the absorption edge of the crystal was at 220nm, while no apparent absorption peaks were found. The X-ray diffraction and DSC curve analysis showed that Mg0.4Al2.4O4 crystal was stable at room temperature. While after annealing in the air and hydrogen atmosphere at about 1200 degrees C,Mg0.4Al2.4O4 decomposed into Al2O3 and (MgO)(0.4)(Al2O3)(x) (0.4 < x < 1.2). The reaction mainly occurred on the crystal surface, barely inside. (C) 2008 Elsevier B.V. All rights reserved.

Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.