Passively mode-locked YVO4/Nd:YVO4 composite crystal green laser with a semiconductor saturable absorber mirror

A diode-pumped passively mode-locked YVO4/Nd YVO4 composite crystal green laser with a semiconductor saturable absorber mirror (SESAM) and a intracavity frequency-doubling KTP crystal was realized. The maximum average output power of 2.06 W at 532 nm with a repetition rate of 100 MHz was obtained at a pump power of 15 W, corresponding to optical slop efficiency 17.2%. The 532 nm mode-locked pulse width was estimated to be approximately 18-ps.

Pressure behaviour of the UV and green emission bands in ZnO micro-rods

The pressure behavior of the ultraviolet (UV) and green emission bands in ZnO tetrapod-like micro-rods has been investigated at 300 and 70 K, respectively. The pressure coefficient of the UV band at 300 K is 24.5 meV/GPa, consistent with that of the band gap of bulk ZnO. However, the pressure coefficient of the green band is 25 meV/GPa, far larger than previous literature reports. The green band in this work originates from Cu-related emission, as confirmed by the fine structure observed in the spectra at 10 K. The pressure coefficients of four phonon replicas of the free exciton emission (FX) at 70 K are 21.0, 20.2, 19.8, and 19.3 meV/GPa, respectively. The energy shift rate of the FX emission and the LO phonon energies is then determined to be 21.4 and 0.55 meV/GPa. The pressure coefficient of the neutral donor bound exciton ((DX)-X-0) transition is 20.5 meV/GPa, only 4% smaller than that of FX. This confirms that the (DX)-X-0 emission corresponds to excitons bound to neutral shallow donors. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Temperature and pressure dependences of the copper-related green emission in ZnO microrods

We have investigated the temperature and pressure dependences of the copper-related green emission, which show fine structure at low temperature, from tetrapodlike ZnO microrods. The temperature dependence of the green emission energy follows the changes in the band gap from 10-200 K, but deviates from this behavior above 200 K. The pressure dependence of the copper-related green band (25 +/- 5 meV/GPa) is similar to that of the band gap of ZnO, and is larger than that reported previously for defect-related green emission in ZnO. (c) 2006 American Institute of Physics.

Green-light-emitting ZnSe nanowires fabricated via vapor phase growth

Stoichiometric ZnSe nanowires have been synthesized through a vapor phase reaction of zinc and selenium powder on the (100) silicon substrate coated with a gold film of 2 nm in thickness. The microstructures and the chemical compositions of the as-grown nanowires have been investigated by means of electron microscopy, the energy dispersive spectroscopy, and Raman spectroscopy. The results reveal that the as-grown materials consist of ZnSe nanowires with diameters ranging from 5 to 50 nm. Photoluminescence of the sample demonstrates a strong green emission from room temperature down to 10 K. This is attributed to the recombination of electrons from conduction band to the medium deep Au acceptors. (C) 2003 American Institute of Physics.

Landauer-Buttiker formula for time-dependent transport through resonant-tunneling structures: A nonequilibrium Green's function approach

A nonequilibrium Green's-function formalism is employed to study the time-dependent transport through resonant-tunneling structures. With this formalism, we derive a time-dependent Landauer-Buttiker formula that guarantees current conservation and gauge invariance. Furthermore, we apply the formula to calculate the response behaviors of the resonant-tunneling structures in the presence of rectangular-pulse and harmonic-modulation fields. The results show that the displacement current plays the role of retarding the tunneling current.

Modeling and optimization of semiconductor manufacturing process with neural networks

A neural network-based process model is proposed to optimize the semiconductor manufacturing process. Being different from some works in several research groups which developed neural network-based models to predict process quality with a set of process variables of only single manufacturing step, we applied this model to wafer fabrication parameters control and wafer lot yield optimization. The original data are collected from a wafer fabrication line, including technological parameters and wafer test results. The wafer lot yield is taken as the optimization target. Learning from historical technological records and wafer test results, the model can predict the wafer yield. To eliminate the "bad" or noisy samples from the sample set, an experimental method was used to determine the number of hidden units so that both good learning ability and prediction capability can be obtained.

Spectral properties of a double-quantum-dot structure: A causal Green's function approach

Spectral properties of a double quantum dot (QD) structure are studied by a causal Green's function (GF) approach. The double QD system is modeled by an Anderson-type Hamiltonian in which both the intra- and interdot Coulomb interactions are taken into account. The GF's are derived by an equation-of-motion method and the real-space renormalization-group technique. The numerical results show that the average occupation number of electrons in the QD exhibits staircase features and the local density of states depends appreciably on the electron occupation of the dot.

Intense green upconversion emission in Tb3+/Yb3+ co-doped alumino-germano-silicate optical fibers

Tb/Yb共掺的石英光纤的上转换绿光发光研究，研究了最佳浓度配比和发光机理。

Green's function of a two-dimensional interacting electron gas in a perpendicular magnetic field

It is rigorously proved that the Green's function of a uniform two-dimensional interacting electron gas in a perpendicular magnetic field is diagonal with respect to single-particle states in the Landau gauge. The implication of this theorem is briefly discussed.

High electrical-to-green efficiency high stability intracavity-frequency-doubled Nd:YAG-LBO QCW 532 nm laser with a straight cavity

An electrical-to-green efficiency of more than 10% was demonstrated by intracavity-frequency-doubling a Q-switched diode-side-pumped Nd:YAG laser with a type II lithium triborate (LBO) crystal in a straight plano-concave cavity. An average power of 69.2 W at 532 nm was generated when electrical input power was 666 W. The corresponding electrical-to-green conversion efficiency is 10.4%. To the best of our knowledge, this is the highest electrical-to-green efficiency of second harmonic generation laser systems with side-pumped laser modules, ever reported. At about 66 W of green output power, the power fluctuation over 4 hours was better than +/-0.86%.