土地利用变化对西双版纳地区土壤及植被碳含量的影响

土地利用变化，尤其是热带地区森林生态系统土地利用方式的变化极大地改变了全球碳循环，对大气CO2浓度的升高，气候变暖等全球性环境问题起着不可忽视的作用。同时，森林的大面积破坏，引起土壤流失，营养元素含量降低，土壤健康状况恶化，最终大幅度降低生态系统的生产力。本文主要结合野外实地调查和室内分析的方法，研究森林砍伐后转变为农田和橡胶园对西双版纳热带地区土壤碳、氮、磷含量以及有机质化学结构的影响，天然次生林恢复、橡胶园建设对大气CO2的蓄积作用。 森林砍伐后转变为农田和橡胶园，显著地改变了土壤的理化特性。研究结果表明，与次生林相比，农田和橡胶园表层土壤容重、pH值升高，含水量降低，有机质、全氮、全磷、速效氮、有效磷含量显著降低。土地利用变化对土壤特性的影响主要发生在0-40 cm 表层土壤，而对40 cm以下土层影响较小。 土地利用变化改变土壤碳含量，同时影响土壤有机质的化学结构。胡敏酸紫外-可见光谱(UV-VIS)、傅利叶变换红外光谱 (FT-IR) 分析发现，不同生态系统表层土壤 (0-20 cm) 胡敏酸光谱学特性存在明显差异。次生林E4/E6值高于农田和橡胶园。与次生林相比，农田和橡胶园表层土壤有机质中酚基相对含量显著降低，脂肪族、芳香族、羧基以及多聚糖等化合物相对含量增加。 运用样地调查、生物量模型模拟和室内土壤样品分析方法，研究了次生林恢复和橡胶园建设对大气CO2的汇集作用。结果表明：退化土壤恢复为次生林、农田建设橡胶园能够有效促进植被和土壤中碳的汇集。次生林和橡胶林生物量增长速率分别为9.8，10.2 （9.4）t•ha-1•yr-1, 1 m表层土壤有机碳汇集速率分别为0.7和1.1 t•C•ha-1•yr-1。模拟结果显示，40年橡胶林生物量为327 (324) t•ha-1, 恢复50年后天然次生林生物量为395 t•ha-1。加之土壤有机碳，40年橡胶园约汇集碳190 t•ha-1, 次生林恢复50年碳汇集潜力为250 t•ha-1。

磷脂对光系统II光合放氧的影响及其作用机理的研究

以类囊体膜中唯一的阴离子型磷脂一磷脂酰甘油(PG)为研究对象，应用放氧测定和富立叶红外光谱等实验方法和技术手段，对PG与光系统II (PSII)之间的相互作用进行了研究。 研究表明，PG对PSII的放氧活性产生显著影响，具有明显的浓度效应。在低浓度(2～22 mg PG／mg Chl)时对PSII的放氧活性有明显的促进作用，而在高浓度(24～40 mg PG／mg Chl)下则表现出显著的抑制作用。 PG对PSII放氧活性的影响与其引起蛋白结构的改变密切相关。结果显示，PG的作用导致PSII颗粒中蛋白质二级结构的改变，主要表现为α-螺旋、β-折叠的增加和无规卷曲的减少。 不仅如此，红外光谱的分析还表明，PG还使蛋白酪氨酸残基中的酚基构象及其周围的微极性发生改变，即在红外光谱的1620—1500 cm-1，之间芳香环骨架的伸缩振动带向高频方向变化，其吸收强度也相应增加;在3500～3100 cm. -1间出现新的氢键吸收峰。 PG除能促进PSII的放氧活性以外，还对PSII表现出新的作用，即PG可以使PSII颗粒因缺钙而受抑制的放氧活性得到恢复;外加Ca2+可使PG表现出对缺钙PSII颗粒(dc。PSII)放氧活性的更大促进作用，且随Ca2+浓度的增加，促进作用也越显著。 PG的作用也使dc。PSII蛋白的结构发生了改变，导致蛋白二级结构中a-螺旋、p_折叠结构的增加和转角、无规卷曲成分的减少，即可使PSII颗粒因缺钙而改变的蛋白结构基本得到恢复。PG还能与Ca2+形成离子对似的配合物，而这种配合物的形成可以优化缺钙PSII颗粒的功能如放氧活性等。

Purification and characterization of hydrosoluble components from the sap of Chinese lacquer tree Rhus vernicifera

Continuous gradient elution chromatography (CGEC) was employed to purify and separate enzymes and polysaccharides from the sap of Rhus vernicifera Chinese lacquer tree. There are three different molecules with laccase enzyme activity. Two are enzymes of each other (L1, and L2), whereas the third (RL) is an entirely separate entity. Two polysaccharides (GP1 and GP2) were also found. The Rhus laccase (RL), and isoenzymes L1 and L2, have peak molecular masses of 109,100, 120,000, 103,000 respectively; each has four copper atoms per molecule, and the pI values were 8.2, 8.6, and 9.1, respectively. The structure of the laccases was studied by Fourier-transform infrared (FT-IR) and Matrix-assisted laser desorption/ionization time-of flight (MALDI-TOF) mass spectrometry. The typical amide I (1646 cm(-1)) and amide II (1545 cm(-1)) bands were observed. The results from MALDI-TOF were similar to those from CGEC, but the molecular mass from the MALDI-TOF was significantly different from that obtained from sodium dodecyl sulfate polyacrylamide gel electrophoresis (SDS-PAGE). (c) 2006 Elsevier B.V. All rights reserved.

Composition deviation of arrays of FePt nanoparticles starting from poly(styrene)-poly(4-vinylpyridine) micelles

Ordered arrays of FePt nanoparticles were prepared using a diblock polymer micellar method combined with plasma treatment. Rutherford backscattering spectroscopy analyses reveal that the molar ratios of Fe to Pt in metal-salt-loaded micelles deviate from those when metal precursors are added, and that the plasma treatment processes have little influence upon the compositions of the resulting FePt nanoparticles. The results from Fourier transform infrared spectroscopy show that the maximum loadings of FeCl3 and H2PtCl6 inside poly( styrene)-poly(4-vinylpyridine) micelles are different. The composition deviation of FePt nanoparticles is attributed to the fact that one FeCl3 molecule coordinates with a single 4-vinylpyridine (4VP) unit, while two neighboring and uncomplexed 4VP units are required for one H2PtCl6 molecule. Additionally, we demonstrate that the center-to-center distances of the neighboring FePt nanoparticles can also be tuned by varying the drawing velocity.

Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment

We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3](2-) defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3](2-) is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000 degrees C annealing, [-SiO3](2-) defects still exist in the films.

Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD

Aluminum nitride (AIN) thin films were deposited on Si (111) substrates by low pressure metalorganic chemical vapor deposition system. The effects of the V/III ratios on the film structure and surface morphology were systematically studied. The chemical states and vibration modes of AIN films were characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectrometer. The optical absorption property of the AIN films, characterized by ultraviolet-visible-near infrared spectrophotometer, exhibited a sharp absorption near the wavelength of 206 mm. The AIN (002) preferential orientation growth was obtained at the V/III ratio of 10,000 and the preferential growth mechanism is presented in this paper according to the thermodynamics and kinetics process of the AIN growth.

Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films

Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilution (R-H=[H-2]/[SiH4 + CH4]) values of 12, 22, 33, 102 and 135. The impacts of RH on the structural and optical properties of the films were investigated by using UV-VIS transmission, Fourier transform infrared (FTIR) absorption, Raman scattering and photoluminescence (PL) measurements. The effects of high temperature annealing on the films were also probed. It is found that with increasing hydrogen dilution, the optical band gap increases, and the PL peak blueshifts from similar to1.43 to 1.62 eV. In annealed state, the room temperature PL peak for the low R-H samples disappears, while the PL peak for the high R-H samples appears at similar to 2.08 eV, which is attributed to nanocrystalline Si particles confined by Si-C and Si-O bonds.

Chemical liquid phase deposition of thin aluminum oxide films

Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al-2(SO4)(3)]=0.0837 mol.L-1, [NaHCO3]=0.214 mol.L-1, 15 degreesC. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy, Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

Parameters determining crystallinity in beta-SiC thin films prepared by catalytic chemical vapor deposition

The effects of deposition gas pressure and H-2 dilution ratio (H-2/SiH4+CH4+H-2), generally considered two of dominant parameters determining crystallinity in beta-SiC thin films prepared by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD method, on the films properties have been systematically studied. As deposition gas pressure increase from 40 to 1000 Pa, the crystallinity of the films is improved. From the study of H-2 dilution ratio, it is considered that H-2 plays a role as etching gas and modulating the phases in beta-SiC thin films. On the basis of the study on the parameters, nanocrystalline beta-SiC films were successfully synthesized on Si substrate at a low temperature of 300degreesC. The Fourier Transform Infrared Spectroscopy (FTIR) and X-ray diffraction (XRD) spectra show formation of beta-SiC. Moreover, according to Sherrer equation, the average grain size of the films estimated is in nanometer-size. (C) 2003 Elsevier B.V. All rights reserved.

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.

Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films

Gallium nitride (GaN) nanorods were synthesized by nitriding Ga2O3/ZnO films which were deposited in turn on Si (111) substrates using radio frequency (RF) magnetron sputtering system. In the nitridation process, ZnO was reduced to Zn and Zn sublimated at 950 degrees C. Ga2O3 was reduced to Ga2O and Ga2O reacted with NH3 to synthesize GaN nanorods with the assistance of the sublimation of Zn. The morphology and structure of the nanorods were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The composition of GaN nanorods was studied by Fourier-transform infrared spectrophotometer (FTIR). The synthesized nanorods is hexagonal wurtzite structured. Nitridation time of the samples has an evident influence on the morphology of GaN nanorods synthesized by this method. (c) 2006 Elsevier B.V. All rights reserved.

The study of high temperature annealing of a-SiC : H films

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon

Hydrogenated silicon (Si:H) films near the threshold of crystallinity were prepared by very high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) using a wide range of hydrogen dilution R-H = [H-2]/[SiH4] values of 2-100. The effects of H dilution R-H on the structural properties of the films were investigated using micro-Raman scattering and Fourier transform infrared (FTIR) absorption spectroscopy. The obtained Raman spectra show that the H dilution leads to improvements in the short-range order and the medium-range order of the amorphous network and then to the morphological transition from amorphous to crystalline states. The onset of this transition locates between R-H = 30 and 40 in our case, and with further increasing R-H from 40 to 100, the nanocrystalline volume fraction increases from similar to23% to 43%, and correspondingly the crystallite size enlarges from similar to2.8 to 4.4 nm. The FTIR spectra exhibit that with R-H increasing, the relative intensities of both the SiH stretching mode component at 2100 cm(-1) and wagging mode component at 620 cm(-1) increase in the same manner. We assert that these variations in IR spectra should be associated with the formation of paracrystalline structures in the low H dilution films and nanocrystalline structures in the high H dilution films. (C) 2003 Elsevier Science B.V. All rights reserved.

Microstructure of a-SiOx : H

A set of a-SiOx:H (0.52 < x < 1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250degreesC. The microstructure and local bonding configurations of the films are investigated in detail using micro-Raman scattering, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It is found that the films are structural inhomogeneous, with five phases of Si, Si2O:H, SiO:H, Si2O3:H and SiO2 that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si) clusters that are spatially isolated. The average size of the clusters decreases with the increasing oxygen concentration x in the films. The results indicate that the structure of the present films can be described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by the subshells Of Si2O:H, SiO:H, Si2O3:H, and SiO2.