375 resultados para diode-pumped


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We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ.

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Based on graphic analysis design method of optical resonator, a simple design expression of V-folded cavity of end-pumped solid-state lasers with TEM00 operation is described, which satisfies two criterias of the resonator design. We give numerical simulation of spot size as a function of thermal focal length using this design approach whose advantages are validated experimentally.

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To optimize the performance of longitudinally pumped Yb^(3+):Y2O3 ceramic lasers, cavity parameters such as material length and output coupler transmission at a certain laser output power are calculated numerically using quasi-three-level laser model. The results show great potential of Yb^(3+):Y2O3 ceramics for highly efficient diode-pumped solid-state lasers.

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We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO3 laser that is resonantly end pumped at 1.94 mu m by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho3+-doped 20-mm-long YAlO3 crystal (b cut), the Ho:YAlO3 laser generated 1 W of linearly polarized (E//c) output at 2118 nm and 0.55 W of E//a output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.

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We demonstrated continuous-wave ( CW) and Q-switched operation of a room-temperature Ho: YAlO3 laser that is resonantly end-pumped by a diode-pumped Tm: YLF laser at 1.91 mu m. The CW Ho: YAlO3 laser generated 5.5 W of linearly polarized (E parallel to c) output at 2118 nm with beam quality factor of M-2 approximate to 1.1 for an incident pump power of 13.8 W, corresponding to optical-to-optical conversion efficiency of 40%. Up to 1-mJ energy per pulse at pulse repetition frequency (PRF) of 5 kHz, and the maximum average power of 5.3-W with FWHM pulse duration of 30.5 ns at 20 kHz were achieved in Q-switched mode. (C) 2008 Optical Society of America.

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We report on an 880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on a semiconductor saturable absorber mirror (SESAM) for the first time. When the incident pump power was 16 W, 4.76 W average output power of continuous-wave mode-locked laser with an optical-to-optical conversion efficiency of 30% was achieved. The repetition rate of mode-locked pulse was 80 MHz with 25 ps pulse width. The maximum pulse energy and peak power were 60 nJ and 2.4 kW, respectively.

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本文报导了采用半导体激光器泵浦的高效连续可调谐Yb:LYSO激光器的输出特性。LYSO晶体同时具有LSO晶体良好的激光性能和YSO晶体易于生长且成本低廉的优点,实验中我们采用5at%掺杂的Yb:LYSO晶体进行研究,获得了最大输出功率2.84W、输出波长1085nm、光-光转换效率54.5%的高效输出。并且得到了1030-1111nm,一共81nm的波长调谐范围,这是目前我们所知道的从Yb:LYSO激光器获得的最宽的调谐输出。

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研究了国产Yb:YAG陶瓷的激光输出特性。激光器采用激光二极管(LD)纵向同轴抽运Yb:YAG陶瓷样品,样品的掺杂原子数分数为1%,一端面镀940 nm和1030 nm双增透膜,另一端面镀1030 nm增透膜,激光器在1031 nm处获得了近红外激光输出。实验中分别测试了Yb:YAG陶瓷在不同输出透射率(T=4%,8%,10%)条件下的激光输出特性。整个实验过程中,激光器维持基横模运转。当输出透射率为10%,吸收的抽运功率为9 W时,激光器获得最大的激光输出功率为1.63 W,相应的斜率效率为23.2%。

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Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.

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在用半导体激光器抽运的单包层掺Yb调Q光纤激光器中观察到了清晰稳定的自锁模脉冲序列。脉冲包络形状为调Q脉冲。每个锁模脉冲的幅值由其在调Q脉冲中的相应位置决定。经过分析,认为自相位调制是调Q光纤激光器中产生锁模的主要原因。自相位调制的存在使得光脉冲的频谱被展宽,当这种展宽和腔的模式间隔相差不多时,腔内的模式便能相互作用,直到它们之间产生一个固定的相位关系。也即形成锁模。在此基础上。去掉声光晶体,并用两个光栅作为腔镜,实现了全光纤法布里-珀罗(F-P)腔锁模光纤激光器。改变腔结构,分别采用光栅和光纤反射圈作为

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设计并实现了一种放大纳秒激光脉冲的高稳定的激光二极管(LD)抽运Nd∶YLF再生放大器。为了获得高稳定的输出,再生放大器工作在饱和状态。此时,再生放大器输出稳定性最好,而且注入激光脉冲能量波动引起的输出激光脉冲波动被抑制。由于增益饱和效应,再生放大器输出脉冲出现时域波形失真,附加后缀脉冲能够减弱时域波形失真。放大器工作波长1053nm,工作频率1Hz。输入240pJ的3ns方波激光脉冲,输出激光脉冲能量4.2mJ,总增益大于107,不稳定度小于1%(均方根),方波扭曲1.33。为3ns方波激光脉冲引入其本身幅度0.75倍的后缀脉冲,输出激光脉冲方波扭曲由1.33降至1.17。

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实验研究了高重复率、大功率半导体激光二极管阵列(LDA)侧面环绕抽运的Nd:YAG激光放大器的放大特性、热焦距变化和热致双折射效应引起的退偏特性。偏振光绎千赫兹高功率单通激光放大器,获得约3倍的光脉冲能量放大,脉冲宽度基本保持不变,其输出的P分量与S分量的能量比趋于常数3:1,实验测得的能量放大倍率及放大光束的椭圆偏振度与理论预期吻合很好。