川西地区几种优势苔藓植株元素含量及其时空差异性

揭示苔藓植株元素含量及其时空差异性是深入开展利用苔藓植物指示环境和筛选理想监测藓种的科学基础。采用微波消解（ICP-AES）方法对九寨沟自然遗产地原始林景点停车场周围三个采样带：I为停车场植被小岛（PS），向外约120 m半径为II带（D120），再向外距离约1,000 m为III带（D1000）和3个方向上的大羽藓和毛尖青藓2种苔藓中13种元素（A1, S, Ca, P, Cu, Fe, K, Mg, Mn, Pb, Ni,Zn和Cd）含量进行了测定和比较，并对采自边坡方向（PS-3）上2005和2007年的4种苔藓植物（南木藓、大羽藓、平藓和厚角絹藓）也进行了13种元素含量的测定和比较。同时对九寨沟自然遗产地、黄龙自然遗产地、夹金山和梦笔山的冷杉原始林4个地区的3种苔藓中（大羽藓、锦丝藓和塔藓）的A1、Ca、Cu、Fe、K、Mg、P、Zn、C和N 10种元素含量进行测定和比较。 对大羽藓和毛尖青藓2种苔藓植物内13种元素的测定发现：1）同种苔藓对不同元素的富集能力不同。A1、Ca、K、Mg和P的元素含量在苔藓中的富集较其他元素的要高。2）不同种苔藓植物对同种元素的富集能力不同，毛尖青藓较大羽藓能够监测出更多的元素；对于被检测出的元素，毛尖青藓监测出的累积量大于大羽藓，其中累积量最大的元素是Ca为10 874.286 μg.g-1.year-1，最小的是Cu元素为5.438 μg.g-1.year-1。对05年和07年的平藓、大羽藓、南木藓和厚角絹藓元素含量的测定表明：元素在两年中的积累量是不同的。综合分析表明，苔藓生物监测方法可有效监测景点停车场机动车尾气中排放出的典型元素（如Cu、Pb、Ni、Zn、Cd等）含量，而毛尖青藓较大羽藓能更可靠的监测九寨沟自然遗产地单景点汽车尾气金属元素种类及其排放量。 对4个地区3种苔藓10种元素监测发现：1）Ca、Mg、Zn、K和Cu元素在黄龙地区的含量高于在其它地区的含量；P元素在梦笔山地区的含量为最高；Fe和Al元素在夹金山地区的含量高于在其它地区的含量。2）C元素在其它因素一致的情况下，进行不同年龄间的元素含量比较，结果显示元素含量在各年龄间并不存在明显的差异性；N元素含量与年龄的差异出现在黄龙林下及林窗的塔藓、九寨沟林下的锦丝藓及塔藓和梦笔山的塔藓中，而在锦丝藓中未出现元素含量与年龄的差异性；塔藓能检测出更多的元素种类其含量与年龄间存在显著差异，锦丝藓检测到的元素种类次之；除锦丝藓（锦丝藓在林窗中几乎检测不到元素含量与年龄间的差异性）外，其他两种藓在林窗中能检测出的元素种类大于在林下的检测种类。3）元素含量与生境间存在差异性的元素分别有：黄龙大羽藓中的Ca、P和Mg元素；九寨锦丝藓中的Zn元素；夹金山塔藓中的Al、Fe和Zn元素；梦笔山大羽藓中的Al、Fe和Mg元素及锦丝藓中的Ca元素。4）区域、年龄和生境因素对苔藓植株元素含量均达到了显著水平，但两两之间及三者之间的交互作用由于元素种类的不同存在差异。综合分析表明，苔藓植物中的元素含量受年龄、区域的影响较生境的更大。 The revelation of mosses elements content and its spatiotemporal differences is the scientific foundation of moss monitoring. To determine the feasibility of moss monitoring metal depositions derived from travel bus emiss ions in scenic spot, we collected one year-growth samples of two mosses Brachythecim piligerum and Thuidium cymbifolium with different distance (island center, 120m，1000m ) and different direction (north, south and east) far from parking site island from Yuanshilin Spot at Jiuzhaigou World Nature Heritage in the Western Sichuan of China and determined thirteen element （A1, S, Ca, P, Cu, Fe, K, Mg, Mn, Pb, Ni, Zn, Cd）contents by ICP-AES analysis method. And picked 4 kinds of mosses (Macrothamnium macrocarpu m（Reinw. etHornsch.）Fleisch.，Thuidium cymbifolium，Entodon concinnus (De Not.) Par., Neckera pennata) from the direction PS-3 in 2005 and 2007, determined 13 element contents. Collected 3 kinds of moss (Thuidium cymbifo lium, Actinothuidium Hookeri (Mitt.) and Hyolcomium splendens (Hedw.) from Jiuzhaigou natural heritage, Huanglong natural heritage, Mt. Jiajin and Mt. Mengbi in primeval forest with two habitat (undergrowth and forest gap), determined element contents of A1, Ca, Cu, Fe, K, Mg, P, Zn, C and N. We found that, 1) The elements content are difference in same type of moss. Content of A1, Ca, K, Mg and P are higher than others. 2) While the contents of A1, S, Ca, P, Cu, Fe, K and Zn had significant correlation with the different distances from parking site, the nearer the distance was, the more accumulation was; 2) Comparing to Thuidium cymbifolium, Brachythecium piligerum can test more elements which contents show the significant correlation with distances. And Brachythecium piligerum can have greater element accumulation than Thuidium cymbifolium. The element contents in two years (2005 and 2007) are different. The present study found that moss can reliably bio-indicate metal deposition from traffic emissions in one scenic spot and Brachythecium piligerum is a good moss for bio-indicating element content from traffic emissions at Jiuzhaigou World natural Heritage. Determined the 10 element contents in 4 areas through 3 kinds of moss we found that, 1) Ca, Mg, Zn, K and Cu element content is higher in the Huanglong area than in other areas, The P element content in Mt. Jiajin is higher than other areas, Fe and Al element content is higher in the Mt. Jiajin than in other areas. 2) The content of C had no significant correlation with age. As for N, this significant correlation found in Hyolcomium splendens (Hedw.) with 2 habitat in Huanglong, Actinothuidium Hookeri (Mitt.) and Hyolcomium splendens (Hedw.) with undergrowth in Jiuzhai, Hyolcomium splendens (Hedw.) in Mt. Mengbi. The types of elements which content showt he significant correlation are most in Hyolcomium splendens (Hedw.) and least in Thuidium cymbifolium. Except Actinothuidium Hookeri (Mitt.), the types of elements that content had significant correlation with age in forest gap are more than in undergrowth. 3) The elements which content had significant correlation with habitat are P, Ca and Mg in Thuidium cymbifolium in Huanglong, Zn in Actinothuidium Hookeri (Mitt.) in Jiuzhai, Al, Fe and Zn in Hyolcomium splendens (Hedw.) in Mt. Jiajin, in Mt. Mengbi Al, Fe and Mg in Thuidium cymbifolium and Ca in Actinothuidium Hookeri (Mitt.). 4）The region, the age and the habitat factor has coeffect element content. The correlationship between element contents and the age, the region is closer than habitat.

Comparative on causes and accumulation of selenium in the tree-rings ambient high-selenium coal combustion area from Yutangba；Hubei；China

IEECAS SKLLQG

A new OSL chronology for dust accumulation in the last 130,000 yr for the Chinese Loess Plateau

IEECAS SKLLQG

Late Pliocene-Pleistocene changes in mass accumulation rates of eolian deposits on the central Chinese Loess Plateau

IEECAS SKLLQG

Charge stripping accumulation of light heavy ions in HIRFL-CSR main ring

The charge stripping injection method has been adopted for the accumulation of light heavy ions in HIRFL-CSR. This method has some special requirements for the accelerating particles, and at the same time the structure of the injection orbit has to be changed. In this paper, the design of the orbit has been presented, as well as the calculation of the beam line matching. According to the result of commissioning, stripping injection can accumulate the beam to a higher current.

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe+ and Mo+ ions of 110 keV), swift heavy ions (Pb-208(27+) ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xen+ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm(3)),. which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.

Electroluminescence of hole block material caused by electron accumulation and hole penetration

In this study, we investigated the electroluminescence (EL) mechanisms and processes of hole block material in the multilayer devices with Eu(TTA)(3)phen (TTA = thenoyltrifluoroacetone, phen = 1,10-phenanthroline) doped CBP (4,4'-N,N'-dicarbazolebiphenyl) as the light-emitting layer (EML). First, the hole block ability of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was experimentally confirmed by comparing the EL spectra. With increasing hole injection, BCP emission emerges and increases gradually due to the increasing hole penetration from EML into the hole block layer (HBL).

Charge transport in accumulation layers of organic heterojunctions

We studied the charge transport in organic heterojunction films consisting of copper phthalocyanine (CuPc) and copper hexadecafluorophthalocyanine (F16CuPc). The heterojunction effect between CuPc and F16CuPc induced high-density carriers at both sides of heterojunction. The Hall effect was observed at room temperature, which demonstrated the existence of free carriers and their delocalized transport under heterojunction effect. The Hall mobility of 1.2 cm(2)/V s for holes and 2.4 cm(2)/V s for electrons indicated that the transport capability of the heterojunction films is comparable to single crystals. The transport process was further explained by the multiple trap-and-release model according to the temperature dependence of conduction.

Single-crystal-like organic heterojunction with 40 nm thick charge accumulation layers

Single-crystal-like organic heterojunction films of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F16CuPc) were fabricated by weak-epitaxy-growth method. The intrinsic properties of organic heterojunction were revealed through threshold voltage shift of field-effect transistors and measurement of single-crystal-like diodes. At both sides of the heterojunction interface 40 nm thick charge accumulation layers formed, which showed that the long carriers' diffusion length is due to the high crystallinity and low density of deep bulk traps of single-crystal-like films.