Ultraviolet-blue electroluminescence from Gd3Ga5O12 : Ag

UV-blue light was obtained from a thin-film electroluminescence device using Gd3Ga5O12:Ag as a light-emitting layer, which was deposited by using electron-beam evaporation. The crystal composition and structure of Gd3Ga5O12:Ag were studied by x-ray powder diffraction, The Gd3Ga5O12:Ag has a photoluminescence emission which peaked at around 397 and 467 nm, which were attributed to the oxide vacancies and Ag+, respectively. The brightness of 32 cd/m(2) was obtained when an alternating voltage of 130 V at 1 kHz was applied. (C) 2000 American Institute of Physics. [S0003-6951(00)05031-2].

High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)

A Schottky-based metal-semiconductor-metal photodetector is fabricated on 1 mu m-thick, crack-free GaN on Si (I 11) substrate using an optimized AlxGal-xN/AlN complex buffer layer. It exhibits a high responsivity of 4600A/W at 366nm which may be due to both a crack-free sample and high internal gain. The relationship between responsivity and bias voltage is also investigated. The experiment results indicate that the responsivity increases with the bias voltage and shows a tendency to saturate. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim.

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers are presented. The growth of the 4H-SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetector was 300 x 300 mu m(2). The dark and illuminated I-V characteristics were measured at reverse biases from 0 V to 30 V at room temperature. The illuminated current was at least two orders of magnitude higher than the dark current at a bias of below 12 V. The photoresponse was measured from 200 nm to 400 nm at different reverse biases and the peak values of the photo response were located at 3 10 nm. The calculated spectral detectivity D* was shown to be higher than 10(13) cmHz(1/2)/W from 260 to 360 nm with a peak value of 5.9 x 10(13) cmHz(1/2) /W at 310 nm. The peak value of the photoresponse was hundreds of times higher than the response at 400 nm, which showed the device had good visible blind performance. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

ZnO thin film photoconductive ultraviolet detector with fast photoresponse

C-axis preferred oriented ZnO thin films were prepared on quartz substrates by RF sputtering. Photoconductive ultraviolet detector with planar interdigital electrodes was fabricated on ZnO thin film by the lift off technique. Linear I-V characteristic was observed under dark or 365 nm UV light illumination and has obvious difference. The photoresponsivity of 365 nm at 5 V bias is 18 A/W. The response time measure set mainly contains KrF excimer laser with the pulse width of 30 ns and the oscillograph with the bandwidth of 200 MHz. The result shows fast photoresponse with a rise time of 100 ns and fall time of 1.5 mu s. (c) 2005 Elsevier B.V. All rights reserved.

Degradation of aquatic humic material by ultraviolet light

Natural humic water was treated with ultraviolet (UV) light and UV + hydrogen peroxide . The effects on the dissolved organic carbon content (DOC), the UV-absorbance at 254 nm (UV-abs.), the molecular size distribution, pH, and mutagenic activity were monitored, and the identity and concentrations of the most abundant gas chromatographable organic degradation products were determined. The DOC content and the UV-abs. of the water decreased substantially during treatment with. The decreases were dependent on the time of irradiation (UV dose) as well as on the H2O2 dose applied. The humus macromolecules were degraded to smaller fragments during irradiation. At higher UV doses, however, part of the dissolved organic matter (DOM) was found to precipitate, probably as a result of polymerization. Oxalic acid, acetic acid, malonic acid, and n-butanoic acid were the most abundant degradation products detected. These acids were found to account for up to 20% and 80% of the DOM in UV- and waters, respectively. No mutagenic activity was generated by the UV irradiation or the treatment. It is further concluded that the substantial mutagenic activity formed during chlorination of humic waters cannot be decreased by using UV irradiation as a pretreatment step.

Sr3Al2O5Cl2:Ce3+,Eu2+: A potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes

The Sr3Al2O5Cl2:Ce3+,Eu2+ phosphors were prepared by solid state reaction. The obtained phosphors exhibit a strong absorption in the UV-visible region and have two intense emission bands at 444 and 609 nm. The energy transfer from the Ce3+ to Eu2+ ions was observed, and the critical distance has been estimated to be about 24.5 A by spectral overlap method. Furthermore, the developed phosphors can generate lights from yellow-to-white region under the excitation of UV radiation by appropriately tuning the activator content, indicating that they have potential applications as an UV-convertible phosphor for white light emitting diodes.

Luminescent properties of Mn2+ in hexagonal aluminates under ultraviolet and vacuum ultraviolet excitation

Mn2+-doped xBaO center dot 6Al(2)O(3) and BaMgAl10O17 phosphors were prepared by solid-state reaction. The investigation of vacuum ultraviolet (VUV) excitation spectra of these phosphors exhibits that 0.82BaO center dot 6Al(2)O(3):Mn2+ and BaMgAl10O17:Mn2+ have a stronger absorption than BaO center dot 6Al(2)O(3):Mn2+ at about 147 nm. The emission spectra under VUV excitation demonstrated that 0.82BaOBa center dot 6Al(2)O(3):Mn2+ and BaMgAl10O17:Mn2+ have a higher luminescent intensity than BaO center dot 6Al(2)O(3):Mn2+. The lifetime analysis indicates that they have similar decay times, indicating that 0.82BaOBa center dot 6Al(2)O(3):Mn2+ and BaMgAl10O17:Mn2+ can be used as luminescent materials for plasma display panels. We observed that the critical concentration of the Mn2+ ions by host excitation is different from that of Mn2+ direct excitation, revealing a different mechanism of energy transfer. The critical distance was calculated. A model was suggested to explain the process of the energy transfer from the host to the Mn2+ ions.

A wide-bandgap semiconducting polymer for ultraviolet and blue light emitting diodes

A novel wide-bandgap conjugated polymer (PDHFSCHD) consisting of alternating dihexylfluorene and rigidly twisted biphenyl units has been synthesized. The new fluorene-based copolymer composed of rigid twisting segments in the main-chain exhibits an optical bandgap of as high as 3.26 eV, and a highly efficient ultraviolet emission with peaks at 368 nm and 386 nm. An electroluminescence device from PDHFSCHD neat film as an active layer shows UV emission which peaks at 395 nm with a turn on voltage below 8 V By optimizing the device conditions, a peak EL quantum efficiency of 0.054% and brightness of 10 cd.m(-2) was obtained. Furthermore, blending a poly(dihexylfluorene) in the PDHFSCHD host gave pure blue emission peaking at 417 nm, and 440 nm without long wavelength emission from aggregated species. Efficient energy transfer from PDHFSCHD to PDHF was demonstrated in these blended systems. Depressed chain-aggregation of PDHF in the PDHFSCHD host can correspond to pure blue emission behaviors.

Vacuum ultraviolet optical properties of (La,Gd)PO4 : RE3+ (RE = Eu, Tb)

Vacuum ultraviolet excitation spectra of phosphors (La,Gd)PO4:RE3+ (RE = Eu or Tb) and X-ray photoelectron spectra of LaPO4 and GdPO4 are investigated. The vacuum ultraviolet excitation intensity of (La,Gd)PO4:RE3+ is enhanced with the increasing of Gd3+ content, which implies that Gd3+ plays an intermediate role in energy transfer from host absorption band to RE3+. When Gd3+ is doped into LaPO4:Eu, charge transfer band (CT band) begins to shift to higher energy region and the overlap degree of CT band and the host absorption band gets greater with more Gd3+ doped into LaPO4. These results suggest that the dopant (Gd3+) gives an important influence on energy transfer efficiency. The top of LaPO4 valance band is formed by the 2p level of O2-, whereas that of GdPO4 valance band is formed by the 2p level of O2- and the 4f level of Gd3+, showing the differences in band structures between LaPO4 and GdPO4.

Studied on the interactions of antibody-porphyrin by circular dichroism and ultraviolet-visible spectrophotometry

Circular dichoism and UV-vis measurements were used to study the interaction between porphyrin and monoclonal antibodies ( McAbs). McAbs-porphyrin complex formation is usually accompanied by significant bathochromic shift and hyperchromicity changes of the absorption maxima in the porphyrin soret band region. Induced CD spectra in the same region (350 similar to 450 nm) were detected upon complex formation. They follow Lamb-Beer's law and exhibit isosbestic behavior. Both the UV-Vis and induced CD spectra of the antibody: porphyrin complex remain unchanged over a broad pH range ( pH 6 similar to 11), indicating remarkable stability of the complex and reflecting the dominant role of hydrophobic interaction between the hapten benzophenone and the antibody combining site.

Determination of p-toluene sulfonic acid in phenol matrix by capillary zone electrophoresis with ultraviolet detection

The p-toluene sulfonic acid (MA) in phenol matrix was separated and determined by capillary electrophoresis with ultraviolet detector. the effect of the concentration and pH of the buffer on separation was investigated. Cinnamic acid has been chosen as the internal standard from four compounds, the calibration curves of PTSA in 50 mg/L phenol matrix were obtained with and without the internal standard. The linear range was from 1.25 to 12.5 mg/L and the correlation coefficient was 0.9999 for both curves. The limit of detection of PISA was 0.75 mg/L at 3 times of SIN. Finally, the concentration of PTSA in four synthesized samples was determined with method of standard additions, and the effect of matrix was discussed. The values of MA in these samples were 1.01, 0.94, 1.56 and 0.00 mg/L respectively.