Researches on essential mechanics issues for submerged floating tunnel

Since 2001, a research group in the Institute of Mechanics, Chinese Academy of Sciences, has been devoted to the research of essential mechanics issues for submerged floating tunnel (SFT). In addition to the structural design of the SFT prototype in Qiandao Lake, the relevant researches cover a number of topics. This paper briefly describes the research procedure and results, including dynamic response of SFT due to surface wave, vortex-induced vibration of anchoring system, structural analysis of curved SFT, temperature effects of curved SFT, structural dynamic response due to accidental load, and effects of structural parameters (buoyancy-weight ratio, tunnel length，tether stiffness���etc.) on dynamic response.

IL-8刺激L-选择素水解断裂对细胞膜拓扑结构和刚度的影响

目的 研究IL-8刺激所致的L-选择素水解断裂是否会引起细胞膜结构和刚度的变化,进而影响L广选择素-配体的反应动力学.方法 分别用IL-8、TAPI-0+IL-8和TAPI-0处理本构表达L-选择素的Jurkat细胞,用以构建L-选择素水解断裂、阻断水解断裂和阻断剂对照的细胞-分子模型.采用扫描电镜观察其表面拓扑结构,采用微管吸吮方法测量其刚度.结果 与正常组相比,水解断裂组和阻断水解断裂组细胞微绒毛减少、表面趋于光滑,而阻断剂对照组则无明显变化;无论是水解断裂组,阻断水解断裂组还是阻断剂对照组,细胞膜刚度与正常组相比均无显著性差异.结论 IL-8刺激所致L-选择素水解断裂会引发细胞膜拓扑结构的变化,进而影响L一选择素一配体反应动力学的变化;而细胞膜刚度未见明显变化,表明载体刚度不是水解断裂引发L-选择素-配体反应动力学变化的因索.

Nonlinear Dynamic Responses of Tension Leg Platform with Slack-Taut Tether

The slack-taut state of tether is a particular Averse circumstance, which may influence the normal operation stale of tension leg platform (TLP). The dynamic responses of TLP with slack-taut tether are studied with consideration of several nonlinear factors introduced by large amplitude motions. The time histories of stresses of tethers of a typical TLP in slack-taut state are given. In addition, the sensitivities of slack to stiffness and mass are investigated by varying file stiffness of tether and mass of TLP. It is found that slack is sensitive to the mass of TLP. The critical culled surfaces (over which indicates the slack) for the increase of mass are obtained.

Factors Resulting In Micron Indentation Hardness Descending In Indentation Tests

Some factors that affect the experimental results in nanoindentation tests such as the contact depth, contact area, load and loading duration are analyzed in this article. Combining with the results of finite element numerical simulation, we find that the creep property of the tested material is one of the important factors causing the micron indentation hardness descending with the increase of indentation depth. The analysis of experimental results with different indentation depths demonstrates that the hardness decrease can be bated if the continuous stiffness measurement technique is not adopted; this indicates that the test method itself may also be one of the factors causing the hardness being descended.

Investigations on valence-change behaviors of europium ions in Eu-doped aluminate and silicate phosphors

Compounds of Sr3Al2O6: Eu, Sr4Al14O25: Eu, and BaZnSiO4: Eu were synthesized by high-temperature solid state reactions. The doping Eu3+ ions were partially reduced to Eu2+ in Sr4Al14O25: Eu and BaZnSiO4: Eu prepared in an oxidizing atmosphere, N-2 + O-2. However, such an abnormal reduction process could not be performed in Sr3Al2O6: Eu, which was also prepared in an atmosphere of N-2 + O-2. Moreover, even though Sr3Al2O6: Eu was synthesized in a reducing condition CO, only part of the Eu3+ ions was reduced to Eu2+. The existence of trivalent and divalent europium ions was confirmed by photoluminescent spectra. The different valence-change behaviors of europium ions in the hosts were attributed to the difference in host crystal structures. The higher the crystal structure stiffness, the easier the reduction process from Eu3+ to Eu2+.

Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms

The bulge test is successfully extended to the determination of the fracture properties of silicon nitride and oxide thin films. This is achieved by using long diaphragms made of silicon nitride single layers and oxide/nitride bilayers, and applying comprehensive mechanical model that describes the mechanical response of the diaphragms under uniform differential pressure. The model is valid for thin films with arbitrary z-dependent plane-strain modulus and prestress, where z denotes the coordinate perpendicular to the diaphragm. It takes into account the bending rigidity and stretching stiffness of the layered materials and the compliance of the supporting edges. This enables the accurate computation of the load-deflection response and stress distribution throughout the composite diaphragm as a function of the load, in particular at the critical pressure leading to the fracture of the diaphragms. The method is applied to diaphragms made of single layers of 300-nm-thick silicon nitride deposited by low-pressure chemical vapor deposition and composite diaphragms of silicon nitride grown on top of thermal silicon oxide films produced by wet thermal oxidation at 950 degrees C and 1050 degrees C with target thicknesses of 500, 750, and 1000 mn. All films characterized have an amorphous structure. Plane-strain moduli E-ps and prestress levels sigma(0) of 304.8 +/- 12.2 GPa and 1132.3 +/- 34.4 MPa, respectively, are extracted for Si3N4, whereas E-ps = 49.1 +/- 7.4 GPa and sigma(0) = -258.6 +/- 23.1 MPa are obtained for SiO2 films. The fracture data are analyzed using the standardized form of the Weibull distribution. The Si3N4 films present relatively high values of maximum stress at fracture and Weibull moduli, i.e., sigma(max) = 7.89 +/- 0.23 GPa and m = 50.0 +/- 3.6, respectively, when compared to the thermal oxides (sigma(max) = 0.89 +/- 0.07 GPa and m = 12.1 +/- 0.5 for 507-nm-thick 950 degrees C layers). A marginal decrease of sigma(max) with thickness is observed for SiO2, with no significant differences between the films grown at 950 degrees C and 1050 degrees C. Weibull moduli of oxide thin films are found to lie between 4.5 +/- 1.2 and 19.8 +/- 4.2, depending on the oxidation temperature and film thickness.

Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane

This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 mu m were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 +/- 47 and 201 +/- 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 +/- 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 +/- 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 +/- 0.88 and 3.16 +/- 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-mu m-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-mu m-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.

Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate

The biaxial piezospectroscopic coefficient (i.e., the rate of spectral shift with stress) of the electrostimulated near-band-gap luminescence of gallium nitride (GaN) was determined as Pi=-25.8 +/- 0.2 meV/GPa. A controlled biaxial stress field was applied on a hexagonal GaN film, epitaxially grown on (0001) sapphire using a ball-on-ring biaxial bending jig, and the spectral shift of the electrostimulated near-band-gap was measured in situ in the scanning electron microscope. This calibration method can be useful to overcome the lack of a bulk crystal of relatively large size for more conventional uniaxial bending calibrations, which has so far hampered the precise determination of the piezospectroscopic coefficient of GaN. The main source of error involved with the present calibration method is represented by the selection of appropriate values for the elastic stiffness constants of both film and substrate. The ball-on-ring calibration method can be generally applied to directly determine the biaxial-stress dependence of selected cathodoluminescence bands of epilayer/substrate materials without requiring separation of the film from the substrate. (c) 2006 American Institute of Physics.

X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis

ErSi1.7 layers with high crystalline quality (chi(min) of Er is 1.5%) have been formed by 90 keV Er ion implantation to a dose of 1.6X10(17)/cm(2) at 450 degrees C using channeled implantation. The perpendicular and parallel elastic strain e(perpendicular to)=-0.94%+/-0.02% and e(parallel to)=1.24%+/-0.08% of the heteroepitaxial erbium silicide layers have been measured with symmetric and asymmetric x-ray reflections using a double-crystal x-ray diffractometer. The deduced tetragonal distortion e(T(XRD))=e(parallel to)-e(perpendicular to)=2.18%+/-0.10%, which is consistent with the value e(T(RBS))2.14+/-0.17% deduced from the Rutherford backscattering and channeling measurements. The quasipseudomorphic growth of the epilayer and the stiffness along a and c axes of the epilayer deduced from the x-ray diffraction are discussed.

Analysis of the practical force accuracy of electromagnet-based nanoindenters

Two important factors that influence the force accuracy of the electromagnet-based nano-indenters but have not yet attracted much attention are analyzed, and a more reasonable way to estimate the force accuracy is presented in this paper. MTS Nano Indenter (R), with the characteristics of a coil suspended in a uniform magnetic field by two sets of springs acting as an actuator and force measuring unit, is used as an example. One of the two factors is the uniformity of the magnetic field. The other is the stiffness of the supporting spring. Consequently, the practical force accuracy varies considerably from test to test because it firmly depends on the working position of the coil and the displacement stroke. A reasonable estimated accuracy value is of the order of 10 degrees mu N for typical indentation tests with a 10(2) nm indentation depth or a 10 degrees mN test force. (C) 2010 Elsevier Ltd. All rights reserved.

Extracting nanobelt mechanical properties from nanoindentation

A three-spring-in-series model is proposed for the nanobelt (NB) indentation test. Compared with the previous two-spring-in-series model, which considers the bending stiffness of atomic force microscope cantilever and the indenter/NB contact stiffness, this model adds a third spring of the NB/substrate contact stiffness. NB is highly flexural due to its large aspect ratio of length to thickness. The bending and lift-off of NB form a localized contact with substrate, which makes the Oliver-Pharr method [W. C. Oliver and G. M. Pharr, J. Mater. Res. 7, 1564 (1992)] and Sneddon method [I. N. Sneddon, Int. J. Eng. Sci. 3, 47 (1965)] inappropriate for NB indentation test. Because the NB/substrate deformation may have significant impact on the force-indentation depth data obtained in experiment, the two-spring-in-series model can lead to erroneous predictions on the NB mechanical properties. NB in indentation test can be susceptible to the adhesion influence because of its large surface area to volume ratio. NB/substrate contact and adhesion can have direct and significant impact on the interpretation of experimental data. Through the three-spring-in-series model, the influence of NB/substrate contact and adhesion is analyzed and methods of reducing such influence are also suggested. (C) 2010 American Institute of Physics. [doi:10.1063/1.3432748]

Analytical method of predicating the instabilities of a micro arch-shaped beam under electrostatic loading

An arch-shaped beam with different configurations under electrostatic loading experiences either the direct pull-in instability or the snap-through first and then the pull-in instability. When the pull-in instability occurs, the system collides with the electrode and adheres to it, which usually causes the system failure. When the snap-through instability occurs, the system experiences a discontinuous displacement to flip over without colliding with the electrode. The snap-through instability is an ideal actuation mechanism because of the following reasons: (1) after snap-through the system regains the stability and capability of withstanding further loading; (2) the system flips back when the loading is reduced, i.e. the system can be used repetitively; and (3) when approaching snap-through instability the system effective stiffness reduces toward zero, which leads to a fast flipping-over response. To differentiate these two types of instability responses for an arch-shaped beam is vital for the actuator design. For an arch-shaped beam under electrostatic loading, the nonlinear terms of the mid-plane stretching and the electrostatic loading make the analytical solution extremely difficult if not impossible and the related numerical solution is rather complex. Using the one mode expansion approximation and the truncation of the higher-order terms of the Taylor series, we present an analytical solution here. However, the one mode approximation and the truncation error of the Taylor series can cause serious error in the solution. Therefore, an error-compensating mechanism is also proposed. The analytical results are compared with both the experimental data and the numerical multi-mode analysis. The analytical method presented here offers a simple yet efficient solution approach by retaining good accuracy to analyze the instability of an arch-shaped beam under electrostatic loading.

压电纤维复合材料铺层用于翼面设计的驱动特性与刚度影响

压电纤维复合材料驱动器在形状控制、振动控制、颤振抑制与抖振控制等方面有广泛的应用前景. 首先简单介绍了压电应变驱动的比拟载荷方法, 并采用该方法讨论了压电陶瓷片状驱动器与压电纤维复合材料驱动器在驱动特性上的主要差异. 在此基础上, 对压电纤维复合材料在不同铺设方式、铺设角度与铺设层数下的驱动特性进行了分析, 在刚度影响方面展示了不同铺设角度下模型刚轴的移动. 分析结果表明: 对称铺设反向电场可以同时获得弯曲与扭转变形, 而反对称铺设同向电场主要获得扭转变形; 两种铺设方式下45°铺设角均获得最大弦向转角, 而0°铺设角将获得最大挠度; 多铺层可以增加驱动载荷, 但总体变形效果还取决于结构系统的刚度比例; 对称铺设方式下铺设角对结构刚轴移动的影响非常明显, 在气动弹性控制中应着重关注.

Probing high-density behavior of symmetry energy from pion emission in heavy-ion collisions

Within the framework of the improved isospin dependent quantum molecular dynamics (ImIQMD) model, the emission of pion in heavy-ion collisions in the region 1 A GeV as a probe of nuclear symmetry energy at supra-saturation densities is investigated systematically, in which the pion is considered to be mainly produced by the decay of resonances Delta(1232) and N*(1440). The total pion multiplicities and the pi(-)/pi(+) yields are calculated for selected Skyrme parameters SkP, SLy6. Ska and SIB, and also for the cases of different stiffness of symmetry energy with the parameter SLy6. Preliminary results compared with the measured data by the FOPI Collaboration favor a hard symmetry energy of the potential term proportional to (rho/rho(0))(gamma s) with gamma(s) = 2. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

Dynamics of pion production in heavy-ion collisions around 1A GeV energies

Within the framework of the improved isospin-dependent quantum molecular dynamics model, the dynamics of pion emission in heavy-ion collisions in the region of 1A GeV energies as a probe of nuclear symmetry energy at suprasaturation densities is investigated systematically. The total pion multiplicities and the pi(-)/pi(+) yields are calculated for selected Skyrme parameters SkP, SLy6, Ska, and SIII and also for the cases of different stiffness of symmetry energy with the parameter SLy6. The influence of Coulomb potential, symmetry energy, and in-medium pion potential on the pion production is investigated and compared to each other by analyzing the distributions of transverse momentum and longitudinal rapidity and also the excitation functions of the total pion and the pi(-)/pi(+) ratio. The directed flow, elliptic flow, and polar-angle distributions are calculated for the cases of different collision centralities and also the various stiffnesses of the symmetry energies. A comparison of the calculations with the available experimental data is performed.